Patents by Inventor Kenichi Ao

Kenichi Ao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190137578
    Abstract: A magnetic sensor includes a substrate that has a main surface, a free layer that has a magnetic easy axis in an in-plane direction parallel to the main surface, an intermediate layer that is disposed between the substrate and the free layer, and a fixed layer that is disposed between the substrate and the intermediate layer. The fixed layer includes: a first ferromagnetic layer a magnetization direction of which is fixed in a first direction that is nonparallel to the main surface; a second ferromagnetic layer a magnetization direction of which is fixed in a second direction in which a component of a direction parallel to a normal line of the main surface is opposite to the first direction; and a nonmagnetic layer that is disposed between the first ferromagnetic layer and the second ferromagnetic layer.
    Type: Application
    Filed: December 27, 2018
    Publication date: May 9, 2019
    Inventors: Takamoto FURUICHI, Kenichi AO, Yasuo ANDO, Mikihiko OOGANE, Takafumi NAKANO
  • Patent number: 9905752
    Abstract: A magneto-resistance element includes a resistance variable layer and a trap layer. The resistance variable layer includes the alloy having B. A resistance of the resistance variable layer changes according to a magnetic field. The trap layer is for trapping the B diffused from the resistance variable layer. With this structure, the B in the resistance variable layer becomes easily trapped in the trap layer and becomes difficult to be diffused to an outside of the magneto-resistance element. A difficulty associated with B diffusion to the outside of the magneto-resistance element can be prevented from occurring.
    Type: Grant
    Filed: August 8, 2014
    Date of Patent: February 27, 2018
    Assignees: DENSO CORPORATION, TOHOKU UNIVERSITY
    Inventors: Toshifumi Yano, Kenichi Ao, Yasuo Ando, Mikihiko Oogane, Takafumi Nakano
  • Patent number: 9753100
    Abstract: A magnetic sensor includes a magnetization fixed layer, a magnetic field detecting layer, and an intermediate layer. The magnetization fixed layer is formed into a thin-film shape, and a magnetization direction of the magnetization fixed layer is fixed in a direction parallel to an in-plane direction. A magnetization direction of the magnetic field detecting layer changes depending on an external magnetic field. The intermediate layer is disposed between the magnetization fixed layer and the magnetic field detecting layer, and a resistance value of the intermediate layer changes depending on an angle between the magnetization direction of the magnetization fixed layer and the magnetization direction of the magnetic field detecting layer. A magnetization amount per unit area of the magnetic field detecting layer is less than 0.2 [memu/cm2].
    Type: Grant
    Filed: February 23, 2015
    Date of Patent: September 5, 2017
    Assignees: DENSO CORPORATION, TOHOKU UNIVERSITY
    Inventors: Toshifumi Yano, Kenichi Ao, Takamoto Furuichi, Yasuo Ando, Mikihiko Oogane, Takafumi Nakano
  • Publication number: 20160341801
    Abstract: A magnetic sensor includes a magnetization fixed layer, a magnetic field detecting layer, and an intermediate layer. The magnetization fixed layer is formed into a thin-film shape, and a magnetization direction of the magnetization fixed layer is fixed in a direction parallel to an in-plane direction. A magnetization direction of the magnetic field detecting layer changes depending on an external magnetic field. The intermediate layer is disposed between the magnetization fixed layer and the magnetic field detecting layer, and a resistance value of the intermediate layer changes depending on an angle between the magnetization direction of the magnetization fixed layer and the magnetization direction of the magnetic field detecting layer. A magnetization amount per unit area of the magnetic field detecting layer is less than 0.2 [memu/cm2].
    Type: Application
    Filed: February 23, 2015
    Publication date: November 24, 2016
    Inventors: Toshifumi YANO, Kenichi AO, Takamoto FURUICHI, Yasuo ANDO, Mikihiko OOGANE, Takafumi NAKANO
  • Publication number: 20160218277
    Abstract: A magneto-resistance element includes a resistance variable layer and a trap layer. The resistance variable layer includes the alloy having B. A resistance of the resistance variable layer changes according to a magnetic field. The trap layer is for trapping the B diffused from the resistance variable layer. With this structure, the B in the resistance variable layer becomes easily trapped in the trap layer and becomes difficult to be diffused to an outside of the magneto-resistance element. A difficulty associated with B diffusion to the outside of the magneto-resistance element can be prevented from occurring.
    Type: Application
    Filed: August 8, 2014
    Publication date: July 28, 2016
    Applicant: DENSO CORPORATION
    Inventors: Toshifumi YANO, Kenichi AO, Yasuo ANDO, Mikihiko OOGANE, Takafumi NAKANO
  • Publication number: 20150325538
    Abstract: The method for producing a semiconductor device includes: forming an opening in an area of at least one of the complementary metal-oxide semiconductor wafer that includes a first part and the other semiconductor wafer that includes a second part, the opening terminating within the area and not penetrating through the area, the area including corresponding one of the first part and the second part and an outer peripheral part of the corresponding one of the first part and the second part; forming a conduction hole within the first part, the conduction hole communicating with a metallic material in the complementary metal-oxide semiconductor wafer; arranging a first joining material inside the conduction hole and on the first part, and a second joining material on the second part; and joining the arranged first joining material and the arranged second joining material.
    Type: Application
    Filed: April 29, 2015
    Publication date: November 12, 2015
    Inventors: Kazuya ASAOKA, Norio FUJITSUKA, Takashi OZAKI, Kenichi AO
  • Patent number: 8829627
    Abstract: A dynamic quantity sensor device includes: first and second dynamic quantity sensors having first and second dynamic quantity detecting units; and first and second substrates, which are bonded to each other to provide first and second spaces. The first and second units are air-tightly accommodated in the first and second spaces, respectively. A SOI layer of the first substrate is divided into multiple semiconductor regions by trenches. First and second parts of the semiconductor regions provide the first and second units, respectively. The second part includes: a second movable semiconductor region having a second movable electrode, which is provided by a sacrifice etching of the embedded oxide film; and a second fixed semiconductor region having a second fixed electrode. The second sensor detects the second dynamic quantity by measuring a capacitance between the second movable and fixed electrodes, which is changeable in accordance with the second dynamic quantity.
    Type: Grant
    Filed: May 24, 2012
    Date of Patent: September 9, 2014
    Assignee: DENSO CORPORATION
    Inventors: Tetsuo Fujii, Keisuke Gotoh, Kenichi Ao
  • Patent number: 8549916
    Abstract: In an angular velocity sensor, a beam portion couples a pair of vibrators with each other and couples each of the vibrators to a substrate to enable the pair of vibrators to be movable in a first direction and a second direction that are perpendicular to each other. The driving portion vibrates the pair of vibrators in opposite phases in the first direction. The detecting portion detects displacement of the pair of vibrators in the second direction as a change in capacitance. The detecting portion includes first and second detecting electrodes. The restricting portion restricts displacement of the pair of vibrators in the second direction based on the change in capacitance. The restricting portion includes first and second restricting electrodes, and an electrode interval between the restricting electrodes is twice a width of the detecting electrodes in the second direction.
    Type: Grant
    Filed: April 25, 2011
    Date of Patent: October 8, 2013
    Assignee: DENSO CORPORATION
    Inventors: Minekazu Sakai, Kenichi Ao
  • Publication number: 20120299127
    Abstract: A dynamic quantity sensor device includes: first and second dynamic quantity sensors having first and second dynamic quantity detecting units; and first and second substrates, which are bonded to each other to provide first and second spaces. The first and second units are air-tightly accommodated in the first and second spaces, respectively. A SOI layer of the first substrate is divided into multiple semiconductor regions by trenches. First and second parts of the semiconductor regions provide the first and second units, respectively. The second part includes: a second movable semiconductor region having a second movable electrode, which is provided by a sacrifice etching of the embedded oxide film; and a second fixed semiconductor region having a second fixed electrode. The second sensor detects the second dynamic quantity by measuring a capacitance between the second movable and fixed electrodes, which is changeable in accordance with the second dynamic quantity.
    Type: Application
    Filed: May 24, 2012
    Publication date: November 29, 2012
    Applicant: DENSO CORPORATION
    Inventors: Tetsuo FUJII, Keisuke GOTOH, Kenichi AO
  • Publication number: 20110271758
    Abstract: In an angular velocity sensor, a beam portion couples a pair of vibrators with each other and couples each of the vibrators to a substrate to enable the pair of vibrators to be movable in a first direction and a second direction that are perpendicular to each other. The driving portion vibrates the pair of vibrators in opposite phases in the first direction. The detecting portion detects displacement of the pair of vibrators in the second direction as a change in capacitance. The detecting portion includes first and second detecting electrodes. The restricting portion restricts displacement of the pair of vibrators in the second direction based on the change in capacitance. The restricting portion includes first and second restricting electrodes, and an electrode interval between the restricting electrodes is twice a width of the detecting electrodes in the second direction.
    Type: Application
    Filed: April 25, 2011
    Publication date: November 10, 2011
    Applicant: DENSO CORPORATION
    Inventors: Minekazu SAKAI, Kenichi Ao
  • Patent number: 7582489
    Abstract: A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.
    Type: Grant
    Filed: February 14, 2008
    Date of Patent: September 1, 2009
    Assignee: DENSO CORPORATION
    Inventors: Kenichi Ao, Yasutoshi Suzuki, Hideya Yamadera, Norikazu Ohta, Hirofumi Funahashi
  • Patent number: 7417269
    Abstract: A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.
    Type: Grant
    Filed: November 21, 2003
    Date of Patent: August 26, 2008
    Assignee: DENSO CORPORATION
    Inventors: Kenichi Ao, Yasutoshi Suzuki, Hideya Yamadera, Norikazu Ohta, Hirofumi Funahashi
  • Publication number: 20080145956
    Abstract: A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.
    Type: Application
    Filed: February 14, 2008
    Publication date: June 19, 2008
    Applicant: DENSO CORPORATION
    Inventors: Kenichi Ao, Yasutoshi Suzuki, Hideya Yamadera, Norikazu Ohta, Hirofumi Funahashi
  • Patent number: 7298022
    Abstract: A protective sheet is fixed to a jig, and regions of the protective sheet corresponding to regions where dicing-cut is to be performed are removed to form grooves. Then, a semiconductor wafer is bonded to the protective sheet at an opposite side of the jig, and the jig is detached from the protective sheet and the semiconductor wafer bonded together. After that, the semiconductor wafer is cut into semiconductor chips by dicing along the grooves of the protective sheet. Because the protective sheet is not cut by dicing, no scraps of the protective sheet is produced, thereby preventing contamination to the chips.
    Type: Grant
    Filed: March 10, 2005
    Date of Patent: November 20, 2007
    Assignee: DENSO CORPORATION
    Inventors: Tetsuo Fujii, Tsuyoshi Fukada, Kenichi Ao
  • Patent number: 7290449
    Abstract: A physical quantity sensor includes: a substrate; an angular speed sensor disposed on the substrate; and an acceleration sensor disposed on the substrate. The angular speed sensor includes an oscillator capable of oscillating by a driving force and displaceable in accordance with a Coriolis force attributed to an angular speed of the oscillator. The acceleration sensor includes a movable portion displaceable in accordance with an acceleration applied to the acceleration sensor. The oscillator has a driving direction, which is not parallel to a displacement direction of the movable portion. The physical quantity sensor having the angular speed sensor and the acceleration sensor detects both of the angular speed and the acceleration with high accuracy.
    Type: Grant
    Filed: March 15, 2005
    Date of Patent: November 6, 2007
    Assignee: DENSO CORPORATION
    Inventor: Kenichi Ao
  • Patent number: 7250760
    Abstract: The magnetic sensor is fabricated such that a magnetic sensor chip, having a one-chip structure in which MRE bridges and a comparator are included, is mounted onto a lead frame using an adhesive material, and then the magnetic sensor chip mounted on the lead frame is encapsulated by molding in a molded material. The magnetic sensor includes a magnetic-field generating portion formed by magnetizing at least one of the chip mounting member, the adhesive material, and the encapsulating material.
    Type: Grant
    Filed: September 29, 2006
    Date of Patent: July 31, 2007
    Assignee: DENSO CORPORATION
    Inventor: Kenichi Ao
  • Publication number: 20070108970
    Abstract: A magnetic sensor apparatus includes a semiconductor substrate and a magnetic impedance device for detecting a magnetic field. The magnetic impedance device is disposed on the substrate. The magnetic sensor apparatus has minimum size and is made with low manufacturing cost. Here, the magnetic impedance device detects a magnetic field in such a manner that impedance of the device is changed in accordance with the magnetic filed when an alternating current is applied to the device and the impedance is measured by an external electric circuit.
    Type: Application
    Filed: January 9, 2007
    Publication date: May 17, 2007
    Applicant: DENSO CORPORATION
    Inventors: Kenichi Ao, Yasutoshi Suzuki, Hideya Yamadera, Norikazu Ohta, Hirofumi Funahashi
  • Patent number: 7216538
    Abstract: A vibratory angular rate sensor comprises a vibrator having a vibrating element arranged to oscillate along a first direction, the element being arranged to further oscillate along a second direction perpendicular to the first direction when subjected to angular rate about a third direction perpendicular to the first and second directions. The vibrating element is caused to oscillate at a predetermined frequency along the first direction. An oscillation detector generates a voltage representing oscillations of the vibrating element along the second direction. A first synchronous detector synchronously detects a primary frequency component of the generated voltage using clock pulses of the predetermined frequency to produce an output signal. A second synchronous detector synchronously detects an odd-numbered harmonic of the generated voltage using clock pulses of the odd-numbered harmonic frequency.
    Type: Grant
    Filed: July 26, 2005
    Date of Patent: May 15, 2007
    Assignee: Denso Corporation
    Inventors: Hajime Ito, Kenichi Ao
  • Publication number: 20070018642
    Abstract: The magnetic sensor is fabricated such that a magnetic sensor chip, having a one-chip structure in which MRE bridges and a comparator are included, is mounted onto a lead frame using an adhesive material, and then the magnetic sensor chip mounted on the lead frame is encapsulated by molding in a molded material. The magnetic sensor includes a magnetic-field generating portion formed by magnetizing at least one of the chip mounting member, the adhesive material, and the encapsulating material.
    Type: Application
    Filed: September 29, 2006
    Publication date: January 25, 2007
    Applicant: DENSO CORPORATION
    Inventor: Kenichi Ao
  • Publication number: 20060027019
    Abstract: A vibratory angular rate sensor comprises a vibrator having a vibrating element arranged to oscillate along a first direction, the element being arranged to further oscillate along a second direction perpendicular to the first direction when subjected to angular rate about a third direction perpendicular to the first and second directions. The vibrating element is caused to oscillate at a predetermined frequency along the first direction. An oscillation detector generates a voltage representing oscillations of the vibrating element along the second direction. A first synchronous detector synchronously detects a primary frequency component of the generated voltage using clock pulses of the predetermined frequency to produce an output signal. A second synchronous detector synchronously detects an odd-.numbered harmonic of the generated voltage using clock pulses of the odd-numbered harmonic frequency.
    Type: Application
    Filed: July 26, 2005
    Publication date: February 9, 2006
    Inventors: Hajime Ito, Kenichi Ao