Patents by Inventor Kenichi Aoyagi

Kenichi Aoyagi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10894917
    Abstract: Provided is a method of producing a ?-sialon fluorescent material having a high light emission intensity and an excellent light emission luminance. The method includes preparing a calcined product having a composition of ?-sialon containing an activating element; grinding the calcined product to obtain a ground product; and heat-treating the ground product to obtain a heat-treated product. A specific surface area of the ground product is 0.2 m2/g or more.
    Type: Grant
    Filed: May 26, 2017
    Date of Patent: January 19, 2021
    Assignee: NICHIA CORPORATION
    Inventors: Kenichi Aoyagi, Takashi Kaide, Motoharu Morikawa, Shoji Hosokawa
  • Publication number: 20200389615
    Abstract: The present disclosure relates to a comparator, an AD converter, a solid-state imaging device, an electronic apparatus, and a comparator control method that can reduce power consumption while increasing the determination speed of the comparator. The comparator includes a comparison unit, a positive feedback circuit, and a current limiting unit. The comparison unit compares the voltage of an input signal and the voltage of a reference signal, and outputs a comparison result signal. The positive feedback circuit increases the transition speed at the time when the comparison result signal is inverted. The current limiting unit limits the current flowing in the comparison unit after the inversion of the comparison result signal. The present disclosure can be applied to comparators, for example.
    Type: Application
    Filed: August 21, 2020
    Publication date: December 10, 2020
    Applicant: SONY CORPORATION
    Inventors: Masaki SAKAKIBARA, Kenichi AOYAGI, Seiji YAMADA
  • Patent number: 10833230
    Abstract: A wavelength converting member comprising a first wavelength converting layer containing: a first fluorescent material having a light emission peak wavelength in a range of 620 nm or more and 660 nm or less; a second fluorescent material having a light emission peak wavelength in a range of 510 nm or more and 560 nm or less; and a resin, wherein the average particle diameter, as measured according to a Fisher Sub-Sieve Sizer method, of the first fluorescent material is in a range of 2 ?m or more and 30 ?m or less, wherein the second fluorescent material comprises a ?-SiAlON fluorescent material, the circularity of the ?-SiAlON fluorescent material is 0.7 or more, and the volume average particle diameter, as measured according to a laser diffraction scattering particle size distribution measuring method, of the ?-SiAlON fluorescent material is in a range of 2 ?m or more and 30 ?m or less, and wherein the thickness of the first wavelength converting layer is in a range of 50 ?m or more and 200 ?m or less.
    Type: Grant
    Filed: February 18, 2020
    Date of Patent: November 10, 2020
    Assignee: NICHIA CORPORATION
    Inventors: Kenichi Aoyagi, Takashi Kaide, Takuya Nakabayashi, Tetsuya Ishikawa, Shoji Hosokawa
  • Patent number: 10804313
    Abstract: The present technology relates to a semiconductor device and a solid-state imaging device of which crack resistance can be improved in a simpler way. The semiconductor device has an upper substrate that is constituted by a Si substrate and wiring layers laminated on the Si substrate and a second substrate that is constituted by a Si substrate and wiring layers laminated on the Si substrate and is joined to the upper substrate. In addition, a pad for wire bonding or probing is formed in the upper substrate, and pads for protecting corner or side parts of the pad for wire bonding or probing are radially laminated and provided in each of the wiring layers between the pad and the Si substrate of the lower substrate. The present technology can be applied to a solid-state imaging device.
    Type: Grant
    Filed: June 6, 2018
    Date of Patent: October 13, 2020
    Assignee: Sony Corporation
    Inventors: Yoshihisa Kagawa, Nobutoshi Fujii, Masanaga Fukasawa, Tokihisa Kaneguchi, Yoshiya Hagimoto, Kenichi Aoyagi, Ikue Mitsuhashi
  • Patent number: 10753551
    Abstract: An electronic component mounting substrate 10A is configured of an electronic component 20, and a mounting substrate 10 mounting the electronic component 20 thereon, in which concave parts 24 are formed on a mounting surface 23 of the electronic component 20 opposite to the mounting substrate 10, a connection part 39 is exposed at the bottom of the concave part 24, and electronic component attachment parts 12 provided on the mounting substrate 10 are soldered to the connection parts 39 provided in the electronic component 20.
    Type: Grant
    Filed: January 27, 2016
    Date of Patent: August 25, 2020
    Assignee: Sony Semiconductor Solutions Corporation
    Inventors: Toshiaki Hasegawa, Kenichi Aoyagi, Yoshiya Hagimoto, Nobutoshi Fujii
  • Patent number: 10707258
    Abstract: A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a second insulating film are exposed and is attached to the first substrate in a state in which the attaching surface of the second substrate and the attaching surface of the first substrate are attached together sandwiching the insulating thin film therebetween, and the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other.
    Type: Grant
    Filed: May 23, 2018
    Date of Patent: July 7, 2020
    Assignee: Sony Corporation
    Inventors: Nobutoshi Fujii, Yoshiya Hagimoto, Kenichi Aoyagi, Yoshihisa Kagawa
  • Publication number: 20200185575
    Abstract: A wavelength converting member comprising a first wavelength converting layer containing: a first fluorescent material having a light emission peak wavelength in a range of 620 nm or more and 660 nm or less; a second fluorescent material having a light emission peak wavelength in a range of 510 nm or more and 560 nm or less; and a resin, wherein the average particle diameter, as measured according to a Fisher Sub-Sieve Sizer method, of the first fluorescent material is in a range of 2 ?m or more and 30 ?m or less, wherein the second fluorescent material comprises a ?-SiAlON fluorescent material, the circularity of the ?-SiAlON fluorescent material is 0.7 or more, and the volume average particle diameter, as measured according to a laser diffraction scattering particle size distribution measuring method, of the ?-SiAlON fluorescent material is in a range of 2 ?m or more and 30 ?m or less, and wherein the thickness of the first wavelength converting layer is in a range of 50 ?m or more and 200 ?m or less.
    Type: Application
    Filed: February 18, 2020
    Publication date: June 11, 2020
    Applicant: NICHIA CORPORATION
    Inventors: Kenichi AOYAGI, Takashi KAIDE, Takuya NAKABAYASHI, Tetsuya ISHIKAWA, Shoji HOSOKAWA
  • Patent number: 10608149
    Abstract: A wavelength converting member comprising a first wavelength converting layer containing: a first fluorescent material having a light emission peak wavelength in a range of 620 nm or more and 660 nm or less; a second fluorescent material having a light emission peak wavelength in a range of 510 nm or more and 560 nm or less; and a resin, wherein the average particle diameter, as measured according to a Fisher Sub-Sieve Sizer method, of the first fluorescent material is in a range of 2 ?m or more and 30 ?m or less, wherein the second fluorescent material comprises a ?-SiAlON fluorescent material, the circularity of the ?-SiAlON fluorescent material is 0.7 or more, and the volume average particle diameter, as measured according to a laser diffraction scattering particle size distribution measuring method, of the ?-SiAlON fluorescent material is in a range of 2 ?m or more and 30 ?m or less, and wherein the thickness of the first wavelength converting layer is in a range of 50 ?m or more and 200 ?m or less.
    Type: Grant
    Filed: March 29, 2019
    Date of Patent: March 31, 2020
    Assignee: NICHIA CORPORATION
    Inventors: Kenichi Aoyagi, Takashi Kaide, Takuya Nakabayashi, Tetsuya Ishikawa, Shoji Hosokawa
  • Publication number: 20190386056
    Abstract: A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a second insulating film are exposed and is attached to the first substrate in a state in which the attaching surface of the second substrate and the attaching surface of the first substrate are attached together sandwiching the insulating thin film therebetween, and the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other.
    Type: Application
    Filed: August 28, 2019
    Publication date: December 19, 2019
    Applicant: Sony Corporation
    Inventors: Nobutoshi Fujii, Yoshiya Hagimoto, Kenichi Aoyagi, Yoshihisa Kagawa
  • Patent number: 10485293
    Abstract: There is provided a semiconductor device, including a semiconductor substrate, an interlayer insulating layer formed on the semiconductor substrate, a bonding electrode formed on a surface of the interlayer insulating layer, and a metal film which covers an entire surface of a bonding surface including the interlayer insulating layer and the bonding electrode.
    Type: Grant
    Filed: June 27, 2017
    Date of Patent: November 26, 2019
    Assignee: Sony Corporation
    Inventors: Yoshiya Hagimoto, Nobutoshi Fujii, Kenichi Aoyagi
  • Publication number: 20190330528
    Abstract: A method for producing ?-sialon fluorescent material having excellent emission intensity is provided. The method for producing ?-sialon fluorescent material includes providing a composition comprising silicon nitride that contains aluminium, an oxygen atom, and europium, heat treating the composition, contacting the heat-treated composition with a basic substance, and washing the composition, which has been contacted with the basic substance, with an acidic liquid medium.
    Type: Application
    Filed: July 8, 2019
    Publication date: October 31, 2019
    Applicant: NICHIA CORPORATION
    Inventors: Motoharu MORIKAWA, Shoji HOSOKAWA, Takashi KAIDE, Kenichi AOYAGI
  • Publication number: 20190313045
    Abstract: The present disclosure relates to a comparator, an AD converter, a solid-state imaging device, an electronic apparatus, and a comparator control method that can reduce power consumption while increasing the determination speed of the comparator. The comparator includes a comparison unit, a positive feedback circuit, and a current limiting unit. The comparison unit compares the voltage of an input signal and the voltage of a reference signal, and outputs a comparison result signal. The positive feedback circuit increases the transition speed at the time when the comparison result signal is inverted. The current limiting unit limits the current flowing in the comparison unit after the inversion of the comparison result signal. The present disclosure can be applied to comparators, for example.
    Type: Application
    Filed: June 11, 2019
    Publication date: October 10, 2019
    Applicant: SONY CORPORATION
    Inventors: Masaki SAKAKIBARA, Kenichi AOYAGI, Seiji YAMADA
  • Publication number: 20190305193
    Abstract: A wavelength converting member comprising a first wavelength converting layer containing: a first fluorescent material having a light emission peak wavelength in a range of 620 nm or more and 660 nm or less; a second fluorescent material having a light emission peak wavelength in a range of 510 nm or more and 560 nm or less; and a resin, wherein the average particle diameter, as measured according to a Fisher Sub-Sieve Sizer method, of the first fluorescent material is in a range of 2 ?m or more and 30 ?m or less, wherein the second fluorescent material comprises a ?-SiAlON fluorescent material, the circularity of the ?-SiAlON fluorescent material is 0.7 or more, and the volume average particle diameter, as measured according to a laser diffraction scattering particle size distribution measuring method, of the ?-SiAlON fluorescent material is in a range of 2 ?m or more and 30 ?m or less, and wherein the thickness of the first wavelength converting layer is in a range of 50 ?m or more and 200 ?m or less.
    Type: Application
    Filed: March 29, 2019
    Publication date: October 3, 2019
    Applicant: NICHIA CORPORATION
    Inventors: Kenichi AOYAGI, Takashi KAIDE, Takuya NAKABAYASHI, Tetsuya ISHIKAWA, Shoji HOSOKAWA
  • Patent number: 10431621
    Abstract: Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.
    Type: Grant
    Filed: May 30, 2018
    Date of Patent: October 1, 2019
    Assignee: Sony Corporation
    Inventors: Yoshihisa Kagawa, Kenichi Aoyagi, Yoshiya Hagimoto, Nobutoshi Fujii
  • Publication number: 20190273109
    Abstract: Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.
    Type: Application
    Filed: May 13, 2019
    Publication date: September 5, 2019
    Applicant: Sony Corporation
    Inventors: Yoshihisa Kagawa, Kenichi Aoyagi, Yoshiya Hagimoto, Nobutoshi Fujii
  • Patent number: 10348992
    Abstract: The present disclosure relates to a comparator, an AD converter, a solid-state imaging device, an electronic apparatus, and a comparator control method that can reduce power consumption while increasing the determination speed of the comparator. The comparator includes a comparison unit, a positive feedback circuit, and a current limiting unit. The comparison unit compares the voltage of an input signal and the voltage of a reference signal, and outputs a comparison result signal. The positive feedback circuit increases the transition speed at the time when the comparison result signal is inverted. The current limiting unit limits the current flowing in the comparison unit after the inversion of the comparison result signal. The present disclosure can be applied to comparators, for example.
    Type: Grant
    Filed: April 24, 2018
    Date of Patent: July 9, 2019
    Assignee: Sony Corporation
    Inventors: Masaki Sakakibara, Kenichi Aoyagi, Seiji Yamada
  • Patent number: 10316249
    Abstract: A method for producing a ?-sialon fluorescent material superior in light emitting luminance is provided. The method includes heat-treating a first mixture containing an aluminum compound, a europium compound, and a first silicon oxynitride compound to obtain a first heat-treated product, and heat-treating a second mixture containing the first heat-treated product, an aluminum compound, a europium compound, and a second silicon oxynitride compound, which has a larger oxygen content than the first silicon oxynitride compound, to obtain a second heat-treated product.
    Type: Grant
    Filed: May 26, 2016
    Date of Patent: June 11, 2019
    Assignee: NICHIA CORPORATION
    Inventors: Motoharu Morikawa, Kenichi Aoyagi, Takashi Kaide, Shoji Hosokawa
  • Patent number: 10190044
    Abstract: A method for producing a ?-sialon fluorescent material can be provided. The method includes preparing a composition containing silicon nitride that contains aluminium, an oxygen atom, and europium, heat-treating the composition in a rare gas atmosphere or in a vacuum, and contacting the heat-treated composition with a gas containing elemental fluorine.
    Type: Grant
    Filed: August 4, 2016
    Date of Patent: January 29, 2019
    Assignee: NICHIA CORPORATION
    Inventors: Shoji Hosokawa, Motoharu Morikawa, Tadayoshi Yanagihara, Kenichi Aoyagi, Takashi Kaide
  • Patent number: 10134795
    Abstract: A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a second insulating film are exposed and is attached to the first substrate in a state in which the attaching surface of the second substrate and the attaching surface of the first substrate are attached together sandwiching the insulating thin film therebetween, and the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other.
    Type: Grant
    Filed: May 30, 2017
    Date of Patent: November 20, 2018
    Assignee: Sony Corporation
    Inventors: Nobutoshi Fujii, Yoshiya Hagimoto, Kenichi Aoyagi, Yoshihisa Kagawa
  • Patent number: 10093855
    Abstract: A method for producing a ?-sialon fluorescent material is provided. The method includes heat-treating a mixture containing an aluminum compound, a first europium compound, and silicon nitride to obtain a first heat-treated product; and heat-treating the first heat-treated product with a second europium compound in a rare gas atmosphere to obtain a second heat-treated product.
    Type: Grant
    Filed: June 3, 2016
    Date of Patent: October 9, 2018
    Assignee: NICHIA CORPORATION
    Inventors: Kenichi Aoyagi, Takashi Kaide, Motoharu Morikawa, Shoji Hosokawa