Abstract: An image forming apparatus includes a transport section that transports a recording material, a grasping section that grasps a remaining situation of a recording material remaining in a transport path through which the recording material is transported by the transport section, a reception section that receives, from a user, an input of the number of removed sheets of recording material removed from the transport path by the user in a case where the transport of the recording material by the transport section is stopped, and a start section that starts the stopped transport by the transport section based on the number of removed sheets input by the user.

Abstract: It is difficult for a Cr—Si-based sintered body composed of chromium silicide (CrSi2) and silicon (Si) to have high strength. Provided is a Cr—Si-based sintered body including Cr (chromium) and silicon (Si), in which the crystal structure attributed by X-ray diffraction is composed of chromium silicide (CrSi2) and silicon (Si), a CrSi2 phase is present at 60 wt % or more in a bulk, a density of the sintered body is 95% or more, and an average grain size of the CrSi2 phase is 60 ?m or less.

Abstract: A hot-melt magnetic tape for a foam molded body, the tape having a magnetic layer formed from a hot-melt magnetic material, where the hot-melt magnetic material has a ring and ball softening point of 105° C. or more and 140° C. or less, and the hot-melt magnetic material includes: a thermoplastic resin containing an ethylene-vinyl acetate copolymer (A); and a magnetic powder (C), and, optionally, further includes a wax (B), where 20 to 80% by mass of the component (A), 0 to 8% by mass of the component (B), and 15 to 80% by mass of the component (C) are contained in 100% by mass in total of the component (A), component (B), and component (C), and a structural unit derived from a vinyl acetate monomer for the ethylene-vinyl acetate copolymer (A) accounts for 15 to 30% by mass.

Abstract: A fabric-like material for reinforcement in an urethane foam molding is obtained by impregnating a part of a surface of a nonwoven fabric of organic fibers with a hot melt magnetic material and immobilizing the hot melt magnetic material. The hot melt magnetic material satisfies compositions described below and has a softening point of 70 to 100° C. Ethylene-vinyl acetate copolymer (A): 10 to 95% by mass. Wax (B): 0 to 30% by mass. Magnetic powder (C): 5 to 70% by mass. (The total of (A), (B) and (C) is 100% by mass.).

Abstract: A fabric-like material for reinforcement in an urethane foam molding is obtained by impregnating a part of a surface of a nonwoven fabric of organic fibers with a hot melt magnetic material and immobilizing the hot melt magnetic material. The hot melt magnetic material satisfies compositions described below and has a softening point of 70 to 100° C. Ethylene-vinyl acetate copolymer (A): 10 to 95% by mass. Wax (B): 0 to 30% by mass. Magnetic powder (C): 5 to 70% by mass. (The total of (A), (B) and (C) is 100% by mass.).

Abstract: A fabric-like material for reinforcement in an urethane foam molding is obtained by impregnating a part of a surface of a nonwoven fabric of organic fibers with a hot melt magnetic material and immobilizing the hot melt magnetic material. The hot melt magnetic material satisfies compositions described below and has a softening point of 70 to 100° C. Ethylene-vinyl acetate copolymer (A): 10 to 95% by mass. Wax (B): 0 to 30% by mass. Magnetic powder (C): 5 to 70% by mass. (The total of (A), (B) and (C) is 100% by mass.).

Abstract: A method for producing a semiconductor device capable of showing its desired performance. In an etching module of a semiconductor device production apparatus, a plasma etching is performed for a stack structure of a wafer such that a portion not covered by a hard mask in the stack structure is etched away. The wafer having a pillar structure whose lateral side is inclined by the plasma etching is loaded into a trimming module. An acetic acid gas is supplied into a processing chamber of the trimming module. In addition, an oxygen GCIB is irradiated from a GCIB irradiating device toward the pillar structure.

Abstract: An etching method for anisotropically etching a Cu film on a substrate surface includes providing a substrate having a Cu film on a surface thereof in a chamber and supplying an organic compound into the chamber while setting the inside of the chamber to a vacuum state and irradiating an oxygen gas cluster ion beam to the Cu film. The etching method further includes oxidizing Cu or the Cu film to a copper oxide by oxygen gas cluster ions in the oxygen gas cluster ion beam and anisotropically etching the Cu film by reacting the copper oxide and the organic compound.

Abstract: A method of removing a residue layer formed on a side surface of each of a plurality of convex-shaped structure which stands together on a surface of a substrate or a side surface of a concave-shaped structure formed on the substrate, includes disposing an electrostatic lens between the substrate and a charged particle irradiation mechanism which linearly irradiates a beam of charged particles onto the substrate. The electrostatic lens diverges the beam of charged particles.

Abstract: Provided is a planarization method capable of reliably planarizing a metal film formed before an MTJ element of an MRAM is formed. An MTJ element is formed by a sequence of processes including: forming a Cu film to be embedded in a SiO2 film in a wafer W; irradiating an oxygen GCIB to a surface of the Cu film to planarize the Cu film; forming a Ta film; forming a Ru film or a Ta film; irradiating the oxygen GCIB to the Ta film, the Ru film or the Ta film to planarize the Ta film, the Ru film or the Ta film; forming a PtMn film; irradiating the oxygen GCIB to a surface of the PtMn film to planarize the PtMn film; forming a CoFe thin film and a Ru thin film; and forming a CoFeB thin film, a MgO thin film and a CoFeB thin film in that order.

Abstract: A method for manufacturing a transistor includes irradiating an oxygen gas cluster ion beam onto a surface layer of a substrate which is made of silicon carbide and includes a channel area to become a channel to form a thin interface oxide film.

Abstract: A method for manufacturing semiconductor device includes preparing a structure including a substrate, an insulating layer on the substrate and having a recess, a barrier film on the insulating layer, and a copper film on the barrier such that the copper film is filling the recess with the barrier between the insulating layer and copper film, removing the copper film down to interface with the barrier such that copper wiring is formed in the recess, etching the wiring such that surface of the wiring is recessed from surface of the insulating layer, and removing the barrier from the surface of the insulating layer such that the surface of the insulating layer is exposed. The etching includes positioning the structure removed down to the barrier in organic compound atmosphere having vacuum state, and irradiating oxygen gas cluster ion beam on the surface of the wiring to anisotropically etch the wiring.

Abstract: A method for manufacturing a semiconductor device includes accommodating in a processing chamber a semiconductor structural body having a semiconductor substrate and a laminated structure formed on the semiconductor substrate and having multiple metal films including a noble-metal film, and generating a bias voltage on the semiconductor substrate while generating an oxygen plasma in the processing chamber such that a plasma treatment removes at least part of the noble-metal film in the laminated structure of the semiconductor structural body.

Abstract: A method for manufacturing semiconductor device includes preparing a structure including a substrate, an insulating layer on the substrate and having a recess, a barrier film on the insulating layer, and a copper film on the barrier such that the copper film is filling the recess with the barrier between the insulating layer and copper film, removing the copper film down to interface with the barrier such that copper wiring is formed in the recess, etching the wiring such that surface of the wiring is recessed from surface of the insulating layer, and removing the barrier from the surface of the insulating layer such that the surface of the insulating layer is exposed. The etching includes positioning the structure removed down to the barrier in organic compound atmosphere having vacuum state, and irradiating oxygen gas cluster ion beam on the surface of the wiring to anisotropically etch the wiring.

Abstract: A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.

Abstract: A method for processing a metal film includes adiabatically expanding a mixed gas including an oxidation gas, a complexing gas and a rare gas in a processing chamber having a vacuum exhaust device such that a gas cluster beam is generated in the processing chamber, and irradiating the gas cluster beam upon a metal film formed on a surface of a workpiece in the processing chamber such that the gas cluster beam collides on the metal film including a metal element and the metal film is etched.

Abstract: This thin film forming method for a solar cell forms a thin film that contains a plurality of elements on the surface of an object to be processed. A raw material solution that contains the elements is dispersed in a processing space and microparticles by an electric field, and the microparticles that are dispersed form a thin film that adheres to the surface of the object to be processed. Thus, a thin film for a solar cell element with preferable crystallinity can be formed even in an atmosphere at atmospheric pressure.

Abstract: A method comprising the steps of: forming a copper film (101) on a Cu barrier film (100); forming a mask material (102) on the copper film (101); anisotropically etching the copper film (101) until the Cu barrier film (100) is exposed, using the mask material (102) as a mask; and removing the mask material (102) and subsequently forming a plating film (104) that contains a substance for suppressing copper diffusion on the anisotropically etched copper film (101), using an electroless plating method that utilizes a selective deposition in which catalytic action occurs with respect to the copper film (101) but not the Cu barrier film (100).

Abstract: This etching method comprises a step for forming an organic compound gas (22) atmosphere around a copper film (101) that has a mask material (102) formed on the surface thereof and a step for using the mask material (102) as a mask on the copper film (101), irradiating with oxygen ions (6), and performing anisotropic etching of the copper film (101) in the organic compound gas (22) atmosphere.

Abstract: A substrate processing method includes applying electroless plating of CoWB onto a Cu interconnection line formed on a wafer W, and then performing a post-cleaning process by use of a cleaning liquid on the target substrate or wafer before a by-product is precipitated on the surface of the CoWB film formed by the electroless plating to cover the Cu interconnection line.