Abstract: A CoWB film is formed as a cap metal on a Cu interconnection line formed on a substrate or wafer W, by repeating a plating step and a post-cleaning step a plurality of times. The plating step is arranged to apply electroless plating containing CoWB onto the Cu interconnection line. The post-cleaning step is arranged to clean the wafer W by use of a cleaning liquid, after the plating step.

Abstract: A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.

Abstract: A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.

Abstract: A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.

Abstract: A CoWB film is formed as a cap metal on a Cu interconnection line formed on a substrate or wafer W, by repeating a plating step and a post-cleaning step a plurality of times. The plating step is arranged to apply electroless plating containing CoWB onto the Cu interconnection line. The post-cleaning step is arranged to clean the wafer W by use of a cleaning liquid, after the plating step.

Abstract: A substrate processing method includes applying electroless plating of CoWB onto a Cu interconnection line formed on a wafer W, and then performing a post-cleaning process by use of a cleaning liquid on the target substrate or wafer before a by-product is precipitated on the surface of the CoWB film formed by the electroless plating to cover the Cu interconnection line.

Abstract: Disclosed is a method of repairing, before embedding a recess with copper, defects of a seed layer formed by sputtering, when forming damascene interconnects. After a copper (silver is also available) nanoparticle-containing sol, e.g., a copper ink is applied onto a substrate, an etch back process for removing the excessive copper ink is performed by supplying an organic solvent onto the substrate. Thereafter, a disperse medium in the copper ink is evaporated by a baking process; and then a dispersant in the copper ink is removed and the nanoparticles are combined with each other to provide a continuous copper film by an annealing process. The etch back process prevents development of defects in a repaired seed layer.

Abstract: An electroless plating apparatus performs electroless plating on a wiring portion with a plating solution using a reducer having low reduction power. The electroless plating apparatus includes a support member with a conductive portion, which supports a substrate; a plating-solution feeding mechanism which feeds the plating solution to a top surface of the substrate supported by the support member; a metal member which is provided at the support member in such a way as to be contactable to the plating solution and dissolves into the plating solution when in contact therewith to thereby generate electrons; and an electron supply passage which supplies the electrons generated by the dissolved metal member to the wiring portion on the substrate via the conductive portion of the support member.

Abstract: An electroless plating apparatus which supplies a plating solution to a top surface of a substrate to effect electroless plating, comprises a substrate support section which supports a substrate, a plating-solution retaining section which retains the plating solution to be supplied to the top surface of the substrate, a plating-solution feeding pipe which guides the plating solution from the plating-solution retaining section to the top surface of the substrate supported by the substrate support section, a plating-solution temperature controlling mechanism which controls a temperature of the plating solution flowing in the plating-solution feeding pipe, and a suction mechanism which sucks the plating solution in the plating-solution feeding pipe toward the plating-solution retaining section when feeding of the plating solution to the top surface of the substrate through the plating-solution feeding pipe is stopped.

Abstract: An electroless plating solution includes a first liquid chemical containing a metal salt and a second liquid chemical containing a reducing agent. In respective liquid chemical supply lines, liquid chemical opening/closing units are installed in the vicinity of a junction therebetween, and at the same time, a plating solution opening/closing unit is provided in the vicinity of an discharge opening in supply line of an electroless plating solution after the first and the second liquid chemical are joined together. A plating solution in the supply line disposed between these opening/closing units corresponds to a discharge amount needed for a plating processing of about one time. Further, both of the liquid chemicals are mixed together only during the time period between the time when a plating processing on one substrate has been started and the time when a plaiting processing is to start on a following substrate.

Abstract: An electrophotographic photoconductor and method of manufacturing thereof exhibits excellent characteristics of residual potential and repetition potential by containment of an additive of a compound. The electrophotographic photoconductor includes a conductive substrate and a photosensitive layer on the substrate, in which the photosensitive layer contains tri(4-nitrophenyl) phosphate.

Abstract: A phthalimide salt compound is contained in a photosensitive material having a charge generating function. Such a photosensitive material exhibits high retention rates of the surface charge. An electrophotographic photoconductor comprising such a photosensitive material is useful in, for example, printers, photocopiers, and facsmilie machines.

Abstract: An electrophotographic photosensitive body has a photosensitive layer formed on a conductive substrate. The photosensitive layer contains a phthalocyanine compound as a photoconductive material, wherein the content of a phthalocyanine dimer compound in the layer that contains the phthalocyanine compound is present from about 100 nmol to about 300 mmol per 1 mol of the phthalocyanine compound. The resulting electrophotographic photosensitive body has excellent potential retention properties.

Abstract: A photosensitive layer of an electrophotographic photoconductor has at least one phthalocyanine compound, wherein the photosensitive layer contains a metal phthalocyanine compound bonded by an o-phthalonitrile compound as a ligand. The o-phthalonitrile ligand is present in an amount from about 100 nmol to about 200 nmol with respect to 1 mol of the phthalocyanine. The resulting electrophotographic photoconductor exhibits a high potential retention rate. A method for making such an electrophotographic photoconductor is also disclosed wherein a photosensitive layer is formed by coating, with a coating layer, to obtain a photosensitive layer having a high potential retention rate.

Abstract: An electrophotographic photosensitive body has a photosensitive layer formed on a conductive substrate. The photosensitive layer contains a phthalocyanine compound as a photoconductive material, wherein the content of a phthalocyanine dimer compound in the layer that contains the phthalocyanine compound is present from about 100 mmol to about 300 mmol per 1 mol of the phthalocyanine compound. The resulting electrophotographic photosensitive body has excellent potential retention properties.

Abstract: An electrophotographic photoconductor includes a phosphinate additive in a photosensitive film that improves the stability of the coating liquid for the photosensitive film. The electrophotographic photoconductor includes an electrically conductive substrate and a photosensitive film on the substrate. The photosensitive film contains a charge generation agent and a phosphinate compound. The photoconductor may be of either a monolayer or a laminate construction. In the case of a laminate type photoconductor, the phosphinate compound is incorporated into the charge transport layer. A method of making an electrophotographic photoconductor adds a phosphinate additive to the coating liquid for a photosensitive film to improve stability of the coating liquid. The method involves producing a coating liquid containing a phosphinate compound and coating a conductive substrate with the coating liquid to form a photosensitive film.

Abstract: A composition for external application comprising kojic acid or a kojic acid derivative is characterized by formulating 4-(1,1-dimethylethyl)-4'-methoxydibenzoylmethan therein. The composition has the improved effects of inhibiting the formation of erythema and pigmentation caused by exposure to ultraviolet rays, preventing stains or freckles due to sunburn and preventing coloration after application, thus providing excellent compositions for external application as cosmetics, topical skin agents, etc.

Abstract: A cooling drum for continuous-casting machines, for manufacturing thin metallic strips, and having a surface composing part of a casting mold wall in contact with molten metal, wherein the surface has numerous dimples disposed uniformly thereon and not in contact with each other, and each of the dimples has an opening portion in the form of a circle or an oval with a diameter of from 0.1 to 1.2 mm and a depth of from 5 to 100 .mu.m.

Abstract: An electrophotographic photoreceptor comprises a conductive base, a photoconductive layer formed of amophous silicon on the conductive base, a buffer layer on the photoconductive layer, and a surface layer covering the photoconductive layer through the buffer layer, wherein the buffer layer is formed of amorphous carbon.

Abstract: A photosensitive material comprising a photosensitive layer composed of an amorphous silicon-based material formed on an electrically conductive support, and a surface layer formed on said photosensitive layer, the surface layer being composed of amorphous carbon containing hydrogen and fluorine has improved printing durability and humidity resistance.