Abstract: An image pickup element includes a photoelectric conversion section including a first electrode, a photoelectric conversion layer including an organic material, and a second electrode stacked on one another. Between the first electrode and the photoelectric conversion layer, an oxide semiconductor layer and an oxide film are formed from the first electrode side.

Abstract: An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode; a third electrode; a photoelectric conversion layer; and a semiconductor layer. The first electrode and the second electrode are disposed in parallel. The third electrode is disposed to be opposed to the first electrode and the second electrode. The photoelectric conversion layer is provided between the first electrode and second electrode and the third electrode. The semiconductor layer is provided between the first electrode and second electrode and the photoelectric conversion layer. The semiconductor layer has a first layer and a second layer stacked therein in order from the photoelectric conversion layer side. The second layer has an energy level at a lowest edge of a conduction band that is shallower than an energy level of the first layer at a lowest edge of a conduction band.

Abstract: A hard disk drive head slider housing a read-write transducer includes a plurality of electrical connection pads, where each electrical pad includes an interconnection portion configured for electrically connecting to an interconnected component, such as a lead suspension, a probe contact portion configured for electrical testing the head slider, and at least one slit positioned between the interconnection portion and the probe contact portion, thereby physically distinguishing and separating the two portions of a multiple-portion pad to inhibit undesirable solder flow to the wider probe contact portion on the slider side of each pad. A more controlled solder joint is provided, while the probe contact portion can remain relatively wide for probe contact and the interconnection portion can remain relatively narrow to reduce solder bridges among the pads.

Abstract: A hard disk drive head slider housing a read-write transducer includes a plurality of electrical connection pads, where each electrical pad includes an interconnection portion configured for electrically connecting to an interconnected component, such as a lead suspension, a probe contact portion configured for electrical testing the head slider, and at least one slit positioned between the interconnection portion and the probe contact portion, thereby physically distinguishing and separating the two portions of a multiple-portion pad to inhibit undesirable solder flow to the wider probe contact portion on the slider side of each pad. A more controlled solder joint is provided, while the probe contact portion can remain relatively wide for probe contact and the interconnection portion can remain relatively narrow to reduce solder bridges among the pads.

Abstract: An imaging apparatus according to embodiments of the present disclosure includes a sensor unit, a front engine that generates compressed raw image data by processing image data acquired from the sensor unit, a main engine that executes a development process on the compressed raw image data acquired from the front engine, and a display unit that displays an image. The front engine controls the display unit to display an image based on the image data acquired from the sensor unit, and the main engine records the image data subjected to the development process in a recording medium.

Abstract: An image pickup element includes a photoelectric conversion section including a first electrode, a photoelectric conversion layer including an organic material, and a second electrode stacked on one another. Between the first electrode and the photoelectric conversion layer, an oxide semiconductor layer and an oxide film are formed from the first electrode side.

Abstract: A hard disk drive suspension assembly includes a pad base layer, a pad-end fixing layer, and a plurality of electrical pads each comprising a conductive layer on the pad base layer, where the base layer extends to the fixing layer, to which a distal end of the base layer is fixed. This configuration inhibits the delamination or deformation of the end edge of each pad. An additional cover layer may be implemented to cover the distal end of the conductive layer(s), further inhibiting deformation of the pads. These techniques are especially relevant with narrow, high-density, small pitch electrical pads.

Abstract: An imaging device includes: a first electrode; a charge storage electrode disposed at a distance from the first electrode; a photoelectric conversion layer in contact with the first electrode and above the charge storage electrode, with an insulating layer between the charge storage electrode and the photoelectric conversion layer; and a second electrode on the photoelectric conversion layer. The portion of the insulating layer between the charge storage electrode and the photoelectric conversion layer includes a first region and a second region, the first region is formed with a first insulating layer, the second region is formed with a second insulating layer, and the absolute value of the fixed charge of the material forming the second insulating layer is smaller than the absolute value of the fixed charge of the material forming the first insulating layer.

Abstract: A multilayer film according to an embodiment of the present disclosure includes: semiconductor layers; and dielectric layers. In each of the semiconductor layers, a value of an optical constant k1 for light having a wavelength in a visible light region among optical constants k is larger than a value of an optical constant k2 for light having a wavelength in an infrared light region. The optical constants k each serves as an extinction coefficient that includes an imaginary part of a complex refractive index. The semiconductor layers and the dielectric layers are alternately stacked and the multilayer film has an optical distance of 0.3 ?m or more and 10 ?m or less in a stack direction and absorbs at least a portion of visible light and transmits infrared light.

Abstract: A solid-state imaging element (100) includes a first photoelectric conversion unit and a second photoelectric conversion unit (600). The first and second photoelectric conversion units (500, 600) are joined at joint surfaces facing each other, and include an upper electrode (502, 602), a lower electrode (508A, 608), a photoelectric conversion film (504, 604), and a storage electrode (510, 610). The lower electrode (508A) of the first photoelectric conversion unit (500) is connected to a charge storage unit (314) via a first through electrode (460A, 460B) penetrating a semiconductor substrate (300).

Abstract: At the time of performing manufacture-related processing on a glass film (G1) with a manufacture-related-processing unit (9) while conveying the glass film (G1) with a belt conveyor (22d), the belt conveyor (22d) is configured to be capable of attracting the glass film (G1) to the belt (23d) on an upstream side in a conveyance direction of the glass film (G1) with respect to the manufacture-related-processing unit (9), and the belt conveyor (22d) is configured to be capable of changing attraction forces (P11 and P12) with respect to the glass film (G1) in a conveyance direction (X) of the glass film (G1).

Abstract: A manufacturing method for a glass film includes at least a cutting step of cutting a strip-shaped glass film while conveying the glass film in a predetermined direction by a conveying device. In the cutting step, the glass film is cut in predetermined cutting zones by irradiating the glass film with laser beams. A support conveyance surface of the conveying device for the glass film is separated at the cutting zones for the glass film. Further, a first surface plate capable of supporting the glass film in a contact manner is disposed at a position that is located in a width direction of the glass film with respect to the cutting zones and corresponds to a center of a glass film obtained by the cutting in the width direction.

Abstract: A solid-state imaging device according to an embodiment of the present disclosure includes: a plurality of photoelectric converters that is stacked on a semiconductor substrate, and has wavelength selectivities different from each other; and a wiring line that is formed on the semiconductor substrate, and is electrically coupled to the plurality of photoelectric converters. Each of the photoelectric converters includes a photoelectric conversion film, and a first electrode and a second electrode that are disposed with the photoelectric conversion film interposed therebetween. The wiring line extends in a direction normal to the semiconductor substrate, and includes a vertical wiring line formed in contact with the second electrode of each of the photoelectric converters.

Abstract: To provide a solid-state imaging element capable of further improving reliability. Provided is a solid-state imaging element including at least a first photoelectric conversion section, and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, in which the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order, and a film density of the first oxide semiconductor layer is higher than a film density of the second oxide semiconductor layer.

Abstract: To provide a solid-state imaging element capable of further improving reliability. Provided is a solid-state imaging element including at least a first photoelectric conversion section, and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, in which the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order, and a film density of the first oxide semiconductor layer is higher than a film density of the second oxide semiconductor layer.

Abstract: Provided is a method of manufacturing a glass film, including a cleaving step (S5) of cleaving a band-like glass film (G1) conveyed in a predetermined conveying direction (X) through irradiation of the glass film (G1) with a laser beam (L). The cleaving step (S5) includes: a step of, while supporting a lower surface of the glass film (G1) by a surface plate (22) including an opening (25a), suctioning the glass film (G1) through the opening (25a); and a step of irradiating the glass film (G1) suctioned through the opening (25a) with the laser beam (L).

Abstract: A solid-state imaging device capable of achieving higher image quality is provided. Provided is a solid-state imaging device including a semiconductor substrate, a first photoelectric conversion unit that is provided above the semiconductor substrate and that converts light into charge, and a second photoelectric conversion unit that is provided above the first photoelectric conversion unit and that converts light into charge. Each of the first photoelectric conversion unit and the second photoelectric conversion unit includes at least a first electrode, a second electrode, and a photoelectric conversion film disposed between the first electrode and the second electrode. The first electrode of the second photoelectric conversion unit and a charge accumulation unit formed in the semiconductor substrate are electrically connected to each other via a conductive portion penetrating at least the first photoelectric conversion unit.

Abstract: An imaging device includes: a first electrode; a charge storage electrode disposed at a distance from the first electrode; a photoelectric conversion layer in contact with the first electrode and above the charge storage electrode, with an insulating layer between the charge storage electrode and the photoelectric conversion layer; and a second electrode on the photoelectric conversion layer. The portion of the insulating layer between the charge storage electrode and the photoelectric conversion layer includes a first region and a second region, the first region is formed with a first insulating layer, the second region is formed with a second insulating layer, and the absolute value of the fixed charge of the material forming the second insulating layer is smaller than the absolute value of the fixed charge of the material forming the first insulating layer.

Abstract: An imaging apparatus according to embodiments of the present disclosure includes a sensor unit, a front engine that generates compressed raw image data by processing image data acquired from the sensor unit, a main engine that executes a development process on the compressed raw image data acquired from the front engine, and a display unit that displays an image. The front engine controls the display unit to display an image based on the image data acquired from the sensor unit, and the main engine records the image data subjected to the development process in a recording medium.

Abstract: A highly functional photoelectric conversion element is provided. The photoelectric conversion element includes: a first photoelectric converter that detects light in a first wavelength range and photoelectrically converts the light; a second photoelectric converter that detects light in a second wavelength range and photoelectrically converts the light to obtain distance information of a subject; and an optical filter that is disposed between the first photoelectric converter and the second photoelectric converter, and allows the light in the second wavelength range to pass therethrough more easily than the light in the first wavelength range. The first photoelectric converter includes a stacked structure and an electric charge accumulation electrode.