Abstract: A semiconductor laser device producing light having a TE-polarized component suitable for practical use (i.e., light having TE-polarized light intensity sufficiently high for practical use). A semiconductor laser device includes a GaAsP active layer, InGaP guide layers, and AlGaInP cladding layers. The GaAsP active layer emits light. The GaAsP active layer is interposed between the InGaP guide layers. The InGaP guide layers and GaAsP active layer are interposed between the AlGaInP cladding layers. Polarization ratio, which is a ratio of light intensity of TM-polarized light to light intensity of TE-polarized light, of the light produced by the semiconductor laser device is less than 2.3.

Abstract: A surface-emitting laser array includes a plurality of surface-emitting laser devices arranged in an array. An optical system includes a plurality of optical devices to guide a light beam composed of lights emitted from the surface-emitting laser array to a target surface to be scanned. A light-intensity-control-device switching unit places one of light-intensity control devices having different light transmittances at a predetermined position in an optical path of the light beam.

Abstract: A first buffer layer (GaAs), a second buffer layer (AlGaAs), and a diffusion suppressing layer consisting of GaAs or AlGaAs are stacked on a GaAs substrate. The structure has a first cladding layer thereon. When AlGaAs is used for the diffusion suppressing layer, the Al ratio of AlGaAs is made smaller than in the second buffer layer. In such a structure, when a window region is formed, the diffusion rate of the impurity (Zn) can be lowered in the diffusion suppressing layer, and the diffusion of the impurity can be stopped at the second buffer layer.

Abstract: In a simulation game machine for play on the basis of images of three-dimensionally constituted terrain features and characters which are represented as if viewed from a prescribed camera within a virtual space, allows the viewing point to be shifted in three dimensions while looking over a stage, thereby enhancing the interest of the game. Upon entering a topographical mapping data check, the viewing point is shifted while panning and zooming in movie-like fashion along a predetermined path, and messages disposed along the path are displayed.

Abstract: A laser diode includes a first n-cladding layer disposed on and lattice-matched to an n-semiconductor substrate, wherein the first n-cladding layer is n-AlGaInP or n-GaInP; a second n-cladding layer of n-AlGaAs supported by the first n-cladding layer; and an inserted layer disposed between the first n-cladding layer and the second n-cladding layer, wherein the inserted layer includes the same elements as the first n-cladding layer, the inserted layer has the same composition ratios of Al and Ga (and P) as the first n-cladding layer, and the inserted layer contains a lower composition ratio of In than the first n-cladding layer.

Abstract: In a semiconductor laser, a n-type AlGaInP clad layer is formed on a n-type GaAs substrate and an active layer having an emission wavelength of 600 to 850 nm is formed on the n-type AlGaInP clad layer. A p-type AlGaInP clad layer is formed on the active layer and a p-type AlGaAs contact layer in which the Al composition is controlled so that the p-type AlGaAs contact layer has an optical bandgap larger than that of the active layer is formed on the p-type AlGaInP clad layer. A p-type GaAs cap layer is formed on the p-type AlGaAs contact layer.

Abstract: Dissolving a solid detergent packed in a detergent container while forming a dissolved surface into a horizontal surface without leaving any detergent in the container. Among these, a rotary nozzle within a closed structure, in which the rotary-nozzle fixture is mounted in a center of rotation of a rotary-nozzle body, the rotary-nozzle body is formed to be substantially S-Shaped in a plan view and divided vertically into two upper and lower parts, where the lower part of the rotary-nozzle body is provided with a rotating shaft hole, which is disposed centrally in a longitudinal direction, formed on a top thereof with a circular groove.

Abstract: A laser diode includes a first n-cladding layer disposed on and lattice-matched to an n-semiconductor substrate, wherein the first n-cladding layer is n-AlGaInP or n-GaInP; a second n-cladding layer of n-AlGaAs supported by the first n-cladding layer; and an inserted layer disposed between the first n-cladding layer and the second n-cladding layer, wherein the inserted layer includes the same elements as the first n-cladding layer, the inserted layer has the same composition ratios of Al and Ga (and P) as the first n-cladding layer, and the inserted layer contains a lower composition ratio of In than the first n-cladding layer.

Abstract: A method for manufacturing a semiconductor optical device includes: forming a p-type cladding layer; forming a capping layer on the p-type cladding layer the capping layer being selectively etchable relative to the p-type cladding layer; forming a through film on the capping layer; forming a window structure by in implantation; removing the through film after the ion implantation; and selectively removing the capping layer using a chemical solution.

Abstract: A semiconductor laser device includes: an n-type cladding layer, an active layer, and a p-type cladding layer, each being a III-V group compound semiconductor, supported on a substrate of n-type GaAs, a p-type band discontinuity reduction layer of a III-V group compound semiconductor on the p-type cladding layer, and a p-type GaAs cap layer on the band discontinuity reduction layer. The p-type cladding layer, the p-type band discontinuity reduction layer, and the p-type cap layer are each doped with a p-type dopant which is lower in diffusivity than Zn. The p-type band discontinuity reduction layer has a concentration of a p-type dopant lower in diffusivity than Zn of 2.5×1018 cm?3 or higher to attain desired device characteristics, for example, high power output and efficiency.

Abstract: A method for manufacturing a semiconductor optical device includes forming a BDR (Band Discontinuity Reduction) layer of a first conductivity type doped with an impurity, depositing a contact layer of the first conductivity type in contact with the BDR layer after forming the BDR layer, the contact layer being doped with the same impurity as the BDR layer and used to form an electrode, and heat treating after forming the contact layer.

Abstract: A light-amount control apparatus for controlling an output light amount of light sources used for optical writing is disclosed. The apparatus includes one or more drive units for supplying a drive current to the light source; one or more drive-current setting units for determining an amount of the drive current provided to the light source from the drive unit; a light-amount detecting unit for detecting an output light from the light source; and outputting a voltage according to the detected light amount; and a processing unit for setting the drive current amount based on the detected value detected with the light-amount detecting unit.

Abstract: A new-type user interface for providing a hotkey is disclosed, which has high operability and which can also be used to provide the hotkey in a conventional manner. In information processing apparatus has a hierarchical structure including a keyboard as one of hardware parts in a bottom layer, a built-in controller as one of hardware parts in a layer higher than the keyboard, and an operating system and an application program as software part in a layer higher than the built-in controller, wherein the operating system and the application program are connected to the built-in controller via a bus. In this information processing apparatus, if an Fn key is pressed and released, information indicating that the Fn key has been pressed and released is supplied to a utility via an SPIC which is logically different from the keyboard controller. In response, a launcher including hotkey menu icons corresponding to additional keys is displayed on a display.

Abstract: A laser diode includes a first n-cladding layer disposed on and lattice-matched to an n-semiconductor substrate, wherein the first n-cladding layer is n-AlGaInP or n-GaInP; a second n-cladding layer of n-AlGaAs supported by the first n-cladding layer; and an inserted layer disposed between the first n-cladding layer and the second n-cladding layer, wherein the inserted layer includes the same elements as the first n-cladding layer, the inserted layer has the same composition ratios of Al and Ga (and P) as the first n-cladding layer, and the inserted layer contains a lower composition ratio of In than the first n-cladding layer.

Abstract: An outer peripheral surface of an inner ring extends straight along outer peripheral surfaces of tapered rollers, and is open at a front side of a tapered roller bearing which is a lubricating oil supply side. A smaller-diameter end portion of a cage is cut in a radial direction to be open. A hole retaining ring is disposed at aback face side of the inner ring which is a lubricating oil discharge side, and is fixed at its outer peripheral portion to an inner peripheral portion of an extension portion of an outer ring. An inner diameter of the hole retaining ring is larger than an outer diameter of a larger rib portion of the inner ring.

Abstract: A toner consumption-calculating apparatus includes a printed portion area-detecting unit that detects an area of a printed portion of image data of a latent image that is formed on a latent image-bearing member; a latent image portion area-detecting unit that detects an area of a latent image portion on the latent image-bearing member; and a latent image portion toner consumption-calculating unit that calculates latent image portion toner consumption that indicates toner amount that is consumed due to adhering on the latent image portion. The latent image portion toner consumption-calculating unit uses a detection result of the latent image portion area-detecting unit and a detection result of the printed portion area-detecting unit to calculate the latent image portion toner consumption.

Abstract: In a simulation game machine for play on the basis of images of three-dimensionally constituted terrain features and characters which are represented as if viewed from a prescribed camera within a virtual space, allows the viewing point to be shifted in three dimensions while looking over a stage, thereby enhancing the interest of the game. Upon entering a topographical mapping data check, the viewing point is shifted while panning and zooming in movie-like fashion along a predetermined path, and messages disposed along the path are displayed.

Abstract: The semiconductor laser device includes an active layer, a p-type cladding layer, and a p-type cap layer. The layers are sequentially stacked so that the semiconductor laser device is provided. The p-type cap layer includes both a p-type dopant and an n-type dopant. In another aspect, the p-type cap layer includes a first layer including a first p-type dopant and a second layer including a second p-type dopant having a diffusion coefficient smaller than that of the first p-type dopant. The first layer is far from the active layer, and the second layer is close to the active layer. In further aspect, the p-type cap layer includes carbon (C) as a p-type dopant. According to these configuration, the p-type dopant can be prevented from being diffused in the active layer and the p-type cladding layer.

Abstract: A new-type user interface for providing a hotkey is disclosed, which has high operability and which can also be used to provide the hotkey in a conventional manner. In information processing apparatus has a hierarchical structure including a keyboard as one of hardware parts in a bottom layer, a built-in controller as one of hardware parts in a layer higher than the keyboard, and an operating system and an application program as software part in a layer higher than the built-in controller, wherein the operating system and the application program are connected to the built-in controller via a bus. In this information processing apparatus, in response to an input operation on a hotkey using an Fn key, information indicating that the key has been pressed or released is supplied to a utility, which is a higher-level system, via an SPIC which is logically different from the keyboard controller.