Patents by Inventor Kenichi Umeda

Kenichi Umeda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11422290
    Abstract: An antireflection film is provided on a substrate and includes an interlayer, a silver-containing metal layer containing silver, and a dielectric layer, which are laminated in this order on a side of a substrate, in which the interlayer is a multilayer film having at least two layers in which a layer of high refractive index having a relatively high refractive index and a layer of lower refractive index having a relatively low refractive index are alternately laminated, the dielectric layer has a surface exposed to air, and the dielectric layer is a multilayer film including a silicon-containing oxide layer, a magnesium fluoride layer, and an adhesion layer provided between the silicon-containing oxide layer and the magnesium fluoride layer and configured to increase adhesiveness between the silicon-containing oxide layer and the magnesium fluoride layer.
    Type: Grant
    Filed: March 9, 2020
    Date of Patent: August 23, 2022
    Assignee: FUJIFILM Corporation
    Inventors: Seigo Nakamura, Tatsuya Yoshihiro, Kenichi Umeda, Yuichiro Itai
  • Patent number: 11422288
    Abstract: In a laminated film, a resin substrate, an organic/inorganic multilayer, and a silver-containing metal layer having a thickness of 20 nm or less are laminated in this order, an anchor metal diffusion control layer having a Hamaker constant of 7.3×10?20 J or more is provided on the surface of the inorganic layer, an anchor region containing an oxide of an anchor metal having a surface energy which has a smaller difference with a surface energy of the silver-containing metal layer than a surface energy of the anchor metal diffusion control layer is provided between the anchor metal diffusion control layer and the silver-containing metal layer, and a cap region containing an oxide of the anchor metal is provided on a surface of the silver-containing metal layer that is opposite from a surface on a side closer to the anchor metal diffusion control layer.
    Type: Grant
    Filed: February 24, 2020
    Date of Patent: August 23, 2022
    Assignee: FUJIFILM Corporation
    Inventors: Kenichi Umeda, Yuichiro Itai, Seigo Nakamura
  • Publication number: 20220093843
    Abstract: A piezoelectric element includes, in sequence, a substrate, a lower electrode layer, a growth control layer, a piezoelectric layer including, as a main component, a perovskite-type oxide containing lead and an upper electrode layer. The growth control layer includes a metal oxide represented by MdN1-dOe, where M is composed of one or more metal elements capable of substituting in the perovskite-type oxide, 0<d<1, and when the electronegativity is X, 1.41X?1.05?d?A1·exp(?X/t1)+y0, where A1=1.68×1012, t1=0.0306, and y0=0.59958.
    Type: Application
    Filed: December 1, 2021
    Publication date: March 24, 2022
    Applicant: FUJIFILM Corporation
    Inventors: Kenichi UMEDA, Takamichi FUJII, Yukihiro OKUNO
  • Publication number: 20220093844
    Abstract: A piezoelectric element includes, in sequence, a substrate, a lower electrode layer, a growth control layer, a piezoelectric layer including a perovskite-type oxide containing lead as a main component of an A site, and an upper electrode layer. The growth control layer includes a metal oxide represented by MdN1?dOe, where M is one or more metal elements capable of substituting for the A site of the perovskite-type oxide. When the electronegativity of M is X, 1.41X?1.05?d?A1·exp(?X/t1)+y0, where A1=1.68×1012, t1=0.0306, and y0=0.59958. The perovskite-type oxide is represented by (Pba1?a2)(Zrb1Tib2?b3)Oc, where 0.5<a1/(b1+b2+b3)<1.07.
    Type: Application
    Filed: December 1, 2021
    Publication date: March 24, 2022
    Applicant: FUJIFILM Corporation
    Inventors: Kenichi UMEDA, Yukihiro OKUNO, Takami ARAKAWA
  • Patent number: 11194078
    Abstract: Provided is an antireflection film that is formed by laminating an interlayer, a silver-containing metal layer containing silver, and a dielectric layer, in this order, on a substrate, in which the interlayer is a multilayer film having two or more layers, in which a layer of high refractive index having a relatively high refractive index and a layer of low refractive index having a relatively low refractive index are alternately laminated, and the dielectric layer has a surface to be exposed to air and is a multilayer film having two or more layers including an oxide layer and a fluorocarbon layer which is a self-assembled film that is formed by a silane coupling reaction to the oxide layer in this order.
    Type: Grant
    Filed: February 28, 2019
    Date of Patent: December 7, 2021
    Assignee: FUJIFILM Corporation
    Inventors: Seigo Nakamura, Kenichi Umeda, Yuichiro Itai, Shinichiro Sonoda
  • Patent number: 11029449
    Abstract: An antireflection film is formed by laminating an interlayer, a silver-containing metal layer containing silver, and a dielectric layer in this order from the substrate, an anchor region including an oxide of an anchor metal is provided between the silver-containing metal layer and the interlayer, a cap region including an oxide of the anchor metal included in the anchor region is provided between the silver-containing metal layer and the dielectric layer, a crystal grain size obtained by X-ray diffraction measurement in the silver-containing metal layer is less than 6.8 nm, and the anchor metal has a surface energy less than a surface energy of silver and greater than a surface energy of a layer of the interlayer closest to the silver-containing metal layer.
    Type: Grant
    Filed: February 6, 2019
    Date of Patent: June 8, 2021
    Assignee: FUJIFILM Corporation
    Inventors: Kenichi Umeda, Seigo Nakamura, Yuichiro Itai, Hideki Yasuda
  • Patent number: 10927446
    Abstract: This method for producing a transparent optical film includes a film formation step of forming a silver layer and a high standard electrode potential metal layer so as to be laminated on a substrate, the film formation step including a silver deposition step of forming the silver layer, at a thickness of 6 nm or less by vacuum deposition, and a high standard electrode potential metal deposition step of forming the high standard electrode potential metal layer formed of a high standard electrode potential metal having a higher standard electrode potential than that of silver by vacuum deposition, and an alloying step of forming a silver alloy layer by diffusing the high standard electrode potential metal within the silver layer by performing a heating treatment at a temperature of 50° C. or higher and 400° C. or lower.
    Type: Grant
    Filed: September 12, 2019
    Date of Patent: February 23, 2021
    Assignee: FUJIFILM Corporation
    Inventors: Seigo Nakamura, Kenichi Umeda, Yuichiro Itai, Shinichiro Sonoda
  • Publication number: 20200408955
    Abstract: The antireflection film includes a dielectric multilayer film arranged on the substrate side and a fine uneven layer containing an alumina hydrate as a main component and provided to be laminated on the dielectric multilayer film. The dielectric multilayer film includes alternating layers of layers of high refractive index having a relatively high refractive index and layers of low refractive index having a relatively low refractive index, the dielectric multilayer film includes a barrier layer containing silicon nitride as one of the layer of high refractive index and the layer of low refractive index, and the barrier layer has a density of 2.7 g/cm3 or more and a thickness of 15 nm or more and 150 nm or less.
    Type: Application
    Filed: September 9, 2020
    Publication date: December 31, 2020
    Inventors: Seigo NAKAMURA, Yoshiki MAEHARA, Tatsuya YOSHIHIRO, Kenichi UMEDA, Yuichiro ITAI, Fusao YAMANAKA
  • Publication number: 20200348451
    Abstract: The optical thin film is provided on a substrate and includes, in order, from the substrate side, an interlayer, a silver-containing metal layer, and a dielectric layer, in which an anchor region including an oxide of an anchor metal is provided in an interface region of the silver-containing metal layer on a side close to the interlayer, a cap region including an oxide of the anchor metal is provided in an interface region of the silver-containing metal layer on a side close to the dielectric layer, a film thickness of the silver-containing metal layer is 6 nm or less, the silver-containing metal layer contains a high standard electrode potential metal, and a peak position of a concentration distribution of the high standard electrode potential metal in a film thickness direction of the silver-containing metal layer is positioned closer to the interlayer than a peak position of a silver concentration distribution.
    Type: Application
    Filed: July 14, 2020
    Publication date: November 5, 2020
    Inventors: Kenichi UMEDA, Seigo NAKAMURA, Tatsuya YOSHIHIRO, Yuichiro ITAI
  • Publication number: 20200235284
    Abstract: A method of manufacturing a power generation element includes a first step of disposing a support unit that supports a vibration unit in one end portion of the vibration unit in one direction, and disposing a weight unit in the other end portion of the vibration unit in the one direction in a substrate including the vibration unit capable of vibrating, a second step of disposing a piezoelectric unit that generates power due to vibration in a portion of the vibration unit on an opposite side from the support unit side in a thickness direction of the substrate after the support unit and the weight unit are disposed in the vibration unit, and a third step of extracting a power generation element from the substrate by cutting an outer edge of the vibration unit in the thickness direction of the substrate after the piezoelectric unit is disposed in the vibration unit.
    Type: Application
    Filed: April 7, 2020
    Publication date: July 23, 2020
    Inventors: Takamichi FUJII, Kenichi UMEDA
  • Publication number: 20200209436
    Abstract: An antireflection film is provided on a substrate and includes an interlayer, a silver-containing metal layer containing silver, and a dielectric layer, which are laminated in this order on a side of a substrate, in which the interlayer is a multilayer film having at least two layers in which a layer of high refractive index having a relatively high refractive index and a layer of lower refractive index having a relatively low refractive index are alternately laminated, the dielectric layer has a surface exposed to air, and the dielectric layer is a multilayer film including a silicon-containing oxide layer, a magnesium fluoride layer, and an adhesion layer provided between the silicon-containing oxide layer and the magnesium fluoride layer and configured to increase adhesiveness between the silicon-containing oxide layer and the magnesium fluoride layer.
    Type: Application
    Filed: March 9, 2020
    Publication date: July 2, 2020
    Applicant: FUJIFILM Corporation
    Inventors: Seigo NAKAMURA, Tatsuya YOSHIHIRO, Kenichi UMEDA, Yuichiro ITAI
  • Publication number: 20200209433
    Abstract: In a laminated film, a resin substrate, an organic/inorganic multilayer, and a silver-containing metal layer having a thickness of 20 nm or less are laminated in this order, an anchor metal diffusion control layer having a Hamaker constant of 7.3×10?20 J or more is provided on the surface of the inorganic layer, an anchor region containing an oxide of an anchor metal having a surface energy which has a smaller difference with a surface energy of the silver-containing metal layer than a surface energy of the anchor metal diffusion control layer is provided between the anchor metal diffusion control layer and the silver-containing metal layer, and a cap region containing an oxide of the anchor metal is provided on a surface of the silver-containing metal layer that is opposite from a surface on a side closer to the anchor metal diffusion control layer.
    Type: Application
    Filed: February 24, 2020
    Publication date: July 2, 2020
    Applicant: FUJIFILM Corporation
    Inventors: Kenichi UMEDA, Yuichiro ITAI, Seigo NAKAMURA
  • Patent number: 10641927
    Abstract: An optical thin film formed by laminating, from the substrate side, an interlayer, a silver-containing metal layer that contains silver, and a dielectric layer, in which an anchor metal diffusion control layer provided between the interlayer and the silver-containing metal layer, an anchor region which includes an oxide of the anchor metal and has a surface energy that is less than the surface energy of the silver-containing metal layer and larger than the surface energy of the anchor metal diffusion control layer is provided between the anchor metal diffusion control layer and the silver-containing metal layer, a cap region which includes an oxide of the anchor metal is provided between the silver-containing metal layer and the dielectric layer, and the total film thickness of the silver-containing metal layer, the anchor region, and the cap region is 6 nm or less.
    Type: Grant
    Filed: September 24, 2019
    Date of Patent: May 5, 2020
    Assignee: FUJIFILM Corporation
    Inventors: Shinichiro Sonoda, Tatsuya Yoshihiro, Kenichi Umeda, Yuichiro Itai, Seigo Nakamura
  • Publication number: 20200033508
    Abstract: An optical thin film formed by laminating, from the substrate side, an interlayer, a silver-containing metal layer that contains silver, and a dielectric layer, in which an anchor metal diffusion control layer provided between the interlayer and the silver-containing metal layer, an anchor region which includes an oxide of the anchor metal and has a surface energy that is less than the surface energy of the silver-containing metal layer and larger than the surface energy of the anchor metal diffusion control layer is provided between the anchor metal diffusion control layer and the silver-containing metal layer, a cap region which includes an oxide of the anchor metal is provided between the silver-containing metal layer and the dielectric layer, and the total film thickness of the silver-containing metal layer, the anchor region, and the cap region is 6 nm or less.
    Type: Application
    Filed: September 24, 2019
    Publication date: January 30, 2020
    Applicant: FUJIFILM Corporation
    Inventors: Shinichiro SONODA, Tatsuya YOSHIHIRO, Kenichi UMEDA, Yuichiro ITAI, Seigo Nakamura
  • Publication number: 20200002804
    Abstract: This method for producing a transparent optical film includes a film formation step of forming a silver layer and a high standard electrode potential metal layer so as to be laminated on a substrate, the film formation step including a silver deposition step of forming the silver layer, at a thickness of 6 nm or less by vacuum deposition, and a high standard electrode potential metal deposition step of forming the high standard electrode potential metal layer formed of a high standard electrode potential metal having a higher standard electrode potential than that of silver by vacuum deposition, and an alloying step of forming a silver alloy layer by diffusing the high standard electrode potential metal within the silver layer by performing a heating treatment at a temperature of 50° C. or higher and 400° C. or lower.
    Type: Application
    Filed: September 12, 2019
    Publication date: January 2, 2020
    Applicant: FUJIFILM Corporation
    Inventors: Seigo NAKAMURA, Kenichi UMEDA, Yuichiro ITAI, Shinichiro SONODA
  • Publication number: 20190196064
    Abstract: Provided is an antireflection film that is formed by laminating an interlayer, a silver-containing metal layer containing silver, and a dielectric layer, in this order, on a substrate, in which the interlayer is a multilayer film having two or more layers, in which a layer of high refractive index having a relatively high refractive index and a layer of low refractive index having a relatively low refractive index are alternately laminated, and the dielectric layer has a surface to be exposed to air and is a multilayer film having two or more layers including an oxide layer and a fluorocarbon layer which is a self-assembled film that is formed by a silane coupling reaction to the oxide layer in this order.
    Type: Application
    Filed: February 28, 2019
    Publication date: June 27, 2019
    Applicant: FUJIFILM Corporation
    Inventors: Seigo NAKAMURA, Kenichi UMEDA, Yuichiro ITAI, Shinichiro SONODA
  • Patent number: 10319928
    Abstract: An object of the present invention is to provide an electrode material for an organic semiconductor device which maintains excellent conductivity and of which contact properties with an organic semiconductor becomes favorable. The electrode material for an organic semiconductor device of the present invention contains inorganic nanoparticles and an organic ?-conjugated ligand, in which the organic ?-conjugated ligand is a ligand having at least one electron-withdrawing substituent.
    Type: Grant
    Filed: August 10, 2017
    Date of Patent: June 11, 2019
    Assignee: FUJIFILM Corporation
    Inventors: Kenichi Umeda, Keisuke Ushirogata
  • Publication number: 20190170908
    Abstract: An antireflection film is formed by laminating an interlayer, a silver-containing metal layer containing silver, and a dielectric layer in this order from the substrate, an anchor region including an oxide of an anchor metal is provided between the silver-containing metal layer and the interlayer, a cap region including an oxide of the anchor metal included in the anchor region is provided between the silver-containing metal layer and the dielectric layer, a crystal grain size obtained by X-ray diffraction measurement in the silver-containing metal layer is less than 6.8 nm, and the anchor metal has a surface energy less than a surface energy of silver and greater than a surface energy of a layer of the interlayer closest to the silver-containing metal layer.
    Type: Application
    Filed: February 6, 2019
    Publication date: June 6, 2019
    Applicant: FUJIFILM Corporation
    Inventors: Kenichi UMEDA, Seigo NAKAMURA, Yuichiro ITAI, Hideki YASUDA
  • Patent number: 10270049
    Abstract: An object of the present invention is to provide an electrode material for an organic semiconductor device with which an excellent electrode pattern can be formed, a method for forming an electrode pattern, and an organic thin-film transistor. An electrode material for an organic semiconductor device of the present invention includes inorganic nanoparticles, an organic ?-conjugated ligand, water, 0.0005% to 15% by mass of a fluorine-based surfactant, and a surface tension adjuster of which a dielectric constant is 20 to 30, in which the organic ?-conjugated ligand is a ligand having at least one hydrophilic substituent.
    Type: Grant
    Filed: April 13, 2018
    Date of Patent: April 23, 2019
    Assignee: FUJIFILM Corporation
    Inventor: Kenichi Umeda
  • Publication number: 20180233684
    Abstract: An object of the present invention is to provide an electrode material for an organic semiconductor device with which an excellent electrode pattern can be formed, a method for forming an electrode pattern, and an organic thin-film transistor. An electrode material for an organic semiconductor device of the present invention includes inorganic nanoparticles, an organic ?-conjugated ligand, water, 0.0005% to 15% by mass of a fluorine-based surfactant, and a surface tension adjuster of which a dielectric constant is 20 to 30, in which the organic ?-conjugated ligand is a ligand having at least one hydrophilic substituent.
    Type: Application
    Filed: April 13, 2018
    Publication date: August 16, 2018
    Applicant: FUJIFILM Corporation
    Inventor: Kenichi UMEDA