Abstract: A gate electrode, a gate insulation film and an inorganic oxide film are formed in this order on a substrate, and a source electrode and a drain electrode are formed to partially cover the inorganic oxide film. Then, oxidation treatment is applied to reduce the carrier density at a region of the inorganic oxide film which is not covered by the electrodes and is used as a channel region of a semiconductor device.

Abstract: In a process for producing an oriented inorganic crystalline film, a non-monocrystalline film containing inorganic crystalline particles is formed on a substrate by a liquid phase technique using a raw-material solution which contains a raw material and an organic solvent, where the inorganic crystalline particles have a layered crystal structure and are contained in the raw material. Then, the non-monocrystalline film is crystallized by heating the non-monocrystalline film to a temperature equal to or higher than the crystallization temperature of the non-monocrystalline film so that part of the inorganic crystalline particles act as crystal nuclei.

Abstract: In a process for producing a thin-film device, a thermal-buffer layer is formed over a substrate which contains a resin material as a main component, and a light-cutting layer is formed over at least a region of the substrate over which a non-monocrystalline film to be annealed is not to be formed, where the light-cutting layer prevents damage from short-wavelength light to the substrate by reducing a proportion of the short-wavelength light which reaches the substrate. Thereafter, the non-monocrystalline film which is to be annealed is formed in a pattern over the substrate having the thermal-buffer layer, and an inorganic film is formed by irradiating the non-monocrystalline film with the short-wavelength light so as to anneal the non-monocrystalline film.

Abstract: In a process for producing a thin-film device having an inorganic film formed over a resin-based substrate, a thermal-buffer layer is formed over a substrate which contains a resin material as a main component, and a light-cutting layer is formed over the thermal-buffer layer, where the light-cutting layer prevents damage from short-wavelength light to the substrate by reducing the proportion of the short-wavelength light which reaches the substrate. Thereafter, a non-monocrystalline film which is to be annealed is formed over the light-cutting layer, where the non-monocrystalline film transmits the short-wavelength light to such a degree that the short-wavelength light can damage the substrate. Then, an inorganic film is formed by irradiating the non-monocrystalline film with the short-wavelength light so as to anneal the non-monocrystalline film.

Abstract: The material for inverting static electricity (or static electricity inverting material) of the present invention contains Si or SiOx (0<x<2) on the surfaces or inside of a base material. The Si or SiOx may be directly vapor-deposited on the base material. Or a silicon sheet prepared from a raw material of Si or SiOx may be attached to the base material. Furthermore, in the case where the static electricity inverting material contains the Si or SiOx thereinside, the Si or SiOx may be sandwiched or mixed in the base material. Moreover, the base material may be singly composed of the Si or SiOx. The invention provides also a method for removing static electricity by covering the surface of a static electricity producing body partly or totally with the static electricity inverting material, alternately, by covering a space accommodating a static electricity receiving body which is electrically charged through connection with the external space with the static electricity inverting material.

Abstract: A plant activator which is strip-shaped, and includes a silicon layer provided on one or both surfaces of the base sheet or within a base sheet and containing Si or SiO.sub.X (0<X <2) as a main component, wherein the silicon layer is provided by vapor-deposition or bonded by an adhesive. The plant activator is hung on or near the plants.

Abstract: A D-E hysteresis loop of ferroelectrics known in the art has a square shape when the ferroelectrics are a BaTiO.sub.3 single crystal. Such ferroelectrics are used as a non-linear dielectric element of, for example a pulse generating device. The non-linear dielectric element according to the present invention consists of a polycrystal, which is mainly composed of BaTiO.sub.3 and has the chemical composition expressed by the formula A.sub.y B.sub.z O.sub.3, wherein the molar ratio of y/z ranges from 0.92 to 0.99. The non-linearity is excellent and the temperature dependence of the A.sub.y B.sub.z O.sub.3 composition is considerably low.