Abstract: An image forming apparatus includes an image carrier, a cleaning unit, a development device, and a control unit. The development device includes a toner collection mechanism having a developer carrier and a filter. The control unit is capable of executing a scattered toner recovery mode at non-image forming time, in which the filter is vibrated, a potential difference is generated in the direction for the toner to move from the developer carrier to the image carrier, the developer carrier is rotated in a reverse direction to that at image forming time, and the image carrier is rotated in the same direction as that at the image forming time, so that scattered toner, which has dropped from the filter and adhered to the developer carrier, is recovered by the cleaning unit via the image carrier.

Abstract: The information processing device includes: a cultivation information acquisition unit configured to acquire cultivation information of a cell; and a recommended condition generation unit configured to generate a recommended condition for detaching the cell from a to-be-processed vessel in which the cell is cultured, the cultivation information including information about the to-be-processed vessel, the recommended condition being a condition for detaching the cell by applying vibration to the to-be-processed vessel, the recommended condition generation unit being configured to generate the recommended condition based on the cultivation information, with use of a learned model, the learned model being learned with use of information about a cultivation condition and information about a detachment condition, the information about the cultivation condition including information about a culture vessel, the information about the detachment condition including information about a condition for applying vibration t

Abstract: The information processing device includes: a cultivation information acquisition unit configured to acquire cultivation information of a cell; and a recommended condition setting unit configured to set a recommended condition for detaching the cell from a to be-processed vessel in which the cell is cultured, the cultivation information including information about the to-be-processed vessel, the recommended condition being a condition for detaching the cell by applying vibration to the to-be-processed vessel, the recommended condition setting unit being configured to set the recommended condition based on the cultivation information, with use of information concerning an association relationship between information about a cultivation condition and information about a detachment condition, the information about the cultivation condition including information about a culture vessel, the information about the detachment condition including information about a condition for applying vibration to the culture vess

Abstract: A vaporization system includes a vaporization chamber having a first portion and a second portion. A first fluid supply part is connected to the first portion of the vaporization chamber, and configured to supply a mixed fluid in which a first carrier gas and a liquid precursor are mixed, toward the second portion. A second fluid supply part is configured to supply a second carrier gas toward the mixed fluid at the second portion.

Abstract: A high-definition or high-resolution display apparatus is provided. The display apparatus includes a first light-emitting device, a second light-emitting device, a first insulating layer, and a second insulating layer. The first light-emitting device includes a first pixel electrode, a first light-emitting layer over the first pixel electrode, and a common electrode over the first light-emitting layer. The second light-emitting device includes a second pixel electrode, a second light-emitting layer over the second pixel electrode, and the common electrode over the second light-emitting layer. Each of an end portion of the first pixel electrode and an end portion of the second pixel electrode is covered with the first insulating layer. The second insulating layer is positioned over the first insulating layer. The second insulating layer covers each of a side surface of the first light-emitting layer and a side surface of the second light-emitting layer.

Abstract: The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained.

Abstract: A high-resolution or high-definition display apparatus is provided. The display apparatus includes a plurality of light-emitting elements, a light-receiving element, a coloring layer, and a first sidewall. The light-emitting elements include a first pixel electrode, a first light-emitting layer over the first pixel electrode, an intermediate layer over the first light-emitting layer, and a common electrode over a second light-emitting layer over a first intermediate layer. The first pixel electrode, the first light-emitting layer, the intermediate layer, and the second light-emitting layer are divided for each light-emitting element. The coloring layer is provided to include a region overlapping with the light-emitting element. The light-receiving element includes a second pixel electrode, a light-receiving layer over the second pixel electrode, and a common electrode over the light-receiving layer.

Abstract: A display device with both high display quality and high resolution is provided. The display device includes a light-emitting element and a connection portion. The connection portion is provided along an outer periphery of a display region where the light-emitting element is provided. The light-emitting element includes a pixel electrode, a first EL layer over the pixel electrode, a second EL layer over the first EL layer, and a common electrode over the second EL layer. The connection portion includes a connection electrode, a second EL layer over the connection electrode, and the common electrode over the second EL layer. The second EL layer includes a first region in contact with the connection electrode and a second region in contact with the common electrode. The area of a region where the first region and the second region overlap with each other in a top view is greater than or equal to 40000 square micrometers.

Abstract: There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.

Abstract: A semiconductor device which has favorable electrical characteristics, a method for manufacturing a semiconductor device with high productivity, and a method for manufacturing a semiconductor device with a high yield are provided.

Abstract: Manufacturing equipment for a light-emitting device with which steps from formation to sealing of a light-emitting element can be successively performed is provided. With the manufacturing equipment for a light-emitting device, a deposition step, a lithography step, and an etching step for forming an organic EL element and a sealing step by formation of a protective layer can be successively performed. Accordingly, a downscaled organic EL element with high luminance and high reliability can be formed. Moreover, the manufacturing equipment can have an in-line system where apparatuses are arranged in the order of process steps for the light-emitting device, resulting in high throughput manufacturing.

Abstract: Provided is a high-resolution or high-definition display apparatus. The display apparatus includes a first light-emitting element, a second light-emitting element, and a sidewall. The first and second light-emitting elements each include a pixel electrode, a first light-emitting layer over the pixel electrode, an intermediate layer over the first light-emitting layer, a second light-emitting layer over the intermediate layer, and a common electrode over the second light-emitting layer. That is, the first and second light-emitting elements can have tandem structures. The pixel electrode, the first light-emitting layer, the intermediate layer, and the second light-emitting layer are separately provided between the light-emitting elements. The first light-emitting element and the second light-emitting element are adjacent to each other, and the sidewall is provided between the first light-emitting element and the second light-emitting element.

Abstract: Described herein is a technique capable of stabilizing a supply flow rate of a vaporized gas. According to one aspect of the technique, there is provided a vaporizer including: a vessel in which a source is stored; a first heater capable of heating the source by immersion into the source stored in the vessel; a second heater capable of heating the vessel; a first temperature sensor capable of measuring a temperature of the source by immersion into the source; a second temperature sensor capable of measuring a temperature of the vessel; and a controller capable of controlling the first heater based on the temperature measured by the first temperature sensor and controlling the second heater based on the temperature measured by the second temperature sensor.

Abstract: An abrasive slurry regeneration method includes: collecting at least a used abrasive slurry containing an abrasive component and a constituent component of a polishing target object discharged from a polishing machine; inactivating a metal ion dissolved in the used abrasive slurry; dispersing the abrasive component and the constituent component of the polishing target object contained in the used abrasive slurry; separating the dispersed abrasive component and constituent component of the polishing target object to remove the constituent component of the polishing target object; and preparing a regenerated abrasive slurry containing the abrasive component.

Abstract: A high-resolution display device is provided.

Abstract: A high-definition or high-resolution display apparatus is provided. The display apparatus includes a first insulating layer, a second insulating layer, a first conductive layer, a second conductive layer, a first light-emitting device, and a second light-emitting device. The top surfaces of the first insulating layer, the first conductive layer, and the second conductive layer are level or substantially level with one another. The first light-emitting device includes a first pixel electrode, a first light-emitting layer, and a common electrode over the first conductive layer. The second light-emitting device includes a second pixel electrode, a second light-emitting layer, and the common electrode over the second conductive layer. The second insulating layer covers a side surface of each of the first pixel electrode, the second pixel electrode, the first light-emitting layer, and the second light-emitting layer.

Abstract: A multifunctional display apparatus with high resolution is provided. The display apparatus includes a first pixel; the first pixel includes a first light-emitting device, a second light-emitting device, and a first light-receiving device; the first light-emitting device includes a first light-emitting layer; the second light-emitting device includes a second light-emitting layer; the second light-emitting device has a function of emitting white light; the first light-emitting device has a function of emitting visible light of a color different from that of the second light-emitting device; the first light-receiving device has a function of sensing light emitted from the first light-emitting device; a side surface of the first light-emitting layer faces a side surface of the second light-emitting layer; and the distance between the side surface of the first light-emitting layer and the side surface of the second light-emitting layer is less than or equal to 8 ?m.

Abstract: A high-resolution display apparatus having a function of sensing light is provided. A high-definition display apparatus having a function of sensing light is provided. The display apparatus includes a first light-emitting device, a second light-emitting device, a third light-emitting device, a first light-receiving device, and a second light-receiving device in a first pixel. The first light-emitting device has a function of emitting red light. The second light-emitting device has a function of emitting green light. The third light-emitting device has a function of emitting blue light. The first light-receiving device has a function of sensing light emitted from at least one of the three light-emitting devices. The second light-receiving device has a function of sensing infrared light.

Abstract: A high-resolution display device is provided. A display device having both high display quality and high resolution is provided. The display device includes a first light-emitting element and a second light-emitting element. The first light-emitting element includes a first pixel electrode, a first EL layer, and a common electrode. The second light-emitting element includes a second pixel electrode, a second EL layer, and the common electrode. An insulating layer containing an inorganic insulating material is provided between the first pixel electrode and the second pixel electrode. The insulating layer includes a first region overlapping with the first EL layer, a second region overlapping with the second EL layer, and a third region positioned between the first region and the second region. A side surface of the first EL layer and a side surface of the second EL layer are positioned over the insulating layer to face each other.

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. The semiconductor device includes a first insulating layer, a second insulating layer, a third insulating layer, a fourth insulating layer, a semiconductor layer, and a first conductive layer. The second insulating layer is positioned over the first insulating layer and the island-shaped semiconductor layer is positioned over the second insulating layer. The second insulating layer has an island shape having an end portion outside a region overlapping with the semiconductor layer. The fourth insulating layer covers the second insulating layer, the semiconductor layer, the third insulating layer, and the first conductive layer, is in contact with part of a top surface of the semiconductor layer, and is in contact with the first insulating layer outside the end portion of the second insulating layer.