Abstract: A fluorescent lamp apparatus includes a fluorescent tube, a ballast circuit for lighting the fluorescent tube, a case for housing the ballast circuit and a holder provided at the end of the case for holding the fluorescent tube. The ballast circuit includes at least a first circuit board and a second circuit board, and the first and second circuit boards are arranged substantially perpendicular to each other in the case. This configuration can suppress an increase in the size of the apparatus and prevent thermal damage to the circuit elements during lamp operation.

Abstract: A discharge lamp operating apparatus includes a discharge lamp and a driving circuit of the discharge lamp. The driving circuit can vary power to be supplied to the discharge lamp and has a function to turn off the discharge lamp at a supplied power value above a supplied power value at which unstable discharge occurs in the discharge lamp.

Abstract: In the OADM apparatus incorporates a reflecting filter having a tunable mechanism, part of an added or dropped signal light is branched and extracted as a monitor light, and the monitor light is further branched into two lights. One of the two lights after branching is passed through an optical filter having wavelength dependency. The monitor light that has passed through the optical filter and the other monitor light that has not passed through the optical filter are guided to detectors of a detection circuit. The ratio of optical power of the two monitor lights is obtained, and the tunable mechanism is controlled so that the value of the ratio may be a predetermined value.

Abstract: A protection circuit has a series combination of a p-channel enhancement type field effect transistor, a first node and a first resistor connected between a high voltage line and a low voltage line and a series combination of a second resistor, a second node and an n-channel enhancement type field effect transistor also connected between the high voltage line and the low voltage line, and the first node and the second node are respectively connected to the gate electrode of the n-channel enhancement type field effect transistor and the gate electrode of the p-channel enhancement type field effect transistor; when one of the field effect transistors is broken down between the source node and the drain node due to abnormal voltage applied between the high voltage line and the low voltage line, the associated resistor varies the potential level at the gate electrode of the other of the field effect transistors due to the break-down current passing therethrough, and causes the other of the field effect transistor

Abstract: A drive circuit for driving scanning lines or data lines in an EL or plasma display panel has a pair of power recovery lines each connected to a corresponding one of two thyristors. The first thyristor recovers electric power from the scanning line and the second thyristor supplies the electric power to another scanning line. The lower ON-resistance and lower parasitic capacitance of the thyristors provides an efficient recovery of the electric power while suppressing a latch-up failure of CMOSFETs.

Abstract: On a surface of one device region defined at a surface of a P-type silicon substrate, a gate electrode is formed on a thermal oxidation layer. An N-type source diffusion layer is formed at the surface of the device region, and a P-type substrate contact layer is formed adjacent the source diffusion layer. On the other hand, an N-type drain diffusion layer is formed at the surface of the other device region defined at the surface of the silicon substrate. A P-type emitter diffusion layer is formed at the surface of the center portion of the drain diffusion layer. The P-type emitter diffusion layer is confined in the drain diffusion layer. Also, an emitter terminal is connected to the emitter diffusion layer. A collector-source terminal is connected to source diffusion layer and a substrate contact layer. Also, a gate terminal is connected to the gate electrode.

Abstract: There is provided a semiconductor device including a substrate having a first conductivity, a source region formed at a surface of the substrate, the source region having a second conductivity and including a lightly doped region and a heavily doped region, a drain region formed at a surface of the substrate, the drain region having a second conductivity and including a lightly doped region and a heavily doped region, an insulating film covering the substrate, a first gate electrode formed on the insulating film between the source region and the drain region, a second gate electrode formed on the insulating film above the lightly doped region of the drain region for controlling the number of carriers in the lightly doped region of the drain region, and a third gate electrode formed on the insulating film above the lightly doped region of the source region for controlling the number of carriers in the lightly doped region of the source region.

Abstract: A field effect semiconductor device includes a first semiconductor region of a first conductive type and a second semiconductor region of a second conductive type provided above the first semiconductor region. A dielectric film is interposed between the first semiconductor region and the second semiconductor region to surround the second semiconductor region and to have at least one opening portion for connecting the second semiconductor region to the first semiconductor region. A field effect transistor is provided, in which a source region is provided in a surface portion of the second semiconductor region and connected to a source electrode and a drain region is provided in the surface portion of the second semiconductor region and connected to a drain electrode. A gate electrode provided between the source region and the drain region to form a channel region.

Abstract: In a pump in which dual plunger is reciprocated with cams attached to the rotating shaft of a motor, the delivery pressure of liquid is measured during a certain period in each cycle of the pump. By setting the pressure during the certain period as a standard pressure value, the motor is controlled so that the delivery pressure during the remaining period in each cycle approaches to the standard pressure value. In this pump, rotating-speed-priority control and pressure-priority control are alternatingly performed to decrease pulsation during delivering liquid.