Abstract: A semiconductor device with improved reliability is provided. The semiconductor device in a QFN package configuration has a semiconductor chip mounted on a tab, leads which are alternately arranged around the tab and electrically connected to the electrodes of the semiconductor chip via bonding wires, and an encapsulating resin portion for encapsulating therein the semiconductor chip and the bonding wires. The lower exposed surfaces of the leads are exposed at the outer peripheral portion of the back surface of the encapsulating resin portion to form external terminals. The lower exposed surfaces of the leads are exposed at the portion of the back surface of the encapsulating resin portion which is located inwardly of the lower exposed surface of the leads to also form external terminals.

Abstract: A semiconductor chip is mounted on a tab, leads alternately arranged around the tab are electrically connected to electrodes of the semiconductor chip via bonding wires, and encapsulating resin encapsulates the semiconductor chip and bonding wires. The lower surfaces of the leads are exposed at the outer periphery of the back surface of the encapsulating resin to form external terminals. The lower surfaces of the leads are exposed at the back surface of the encapsulating resin located inwardly of the lower exposed surface of the leads to form external terminals. The cut surfaces of the leads are exposed at the cut surfaces of the encapsulating resin, while upper exposed surfaces of the leads are exposed from the encapsulating resin portion which is proximate to the cut surfaces thereof. Each of the upper exposed surfaces of the leads has a width smaller than the width of each of the lower exposed surfaces.

Abstract: According to the method of manufacturing a semiconductor device, a lead frame is provided wherein the thickness of a tab-side end portion of a silver plating for wire connection formed on each suspending lead 1e is smaller than that of a silver plating formed on each lead. Thereafter, a semiconductor chip is mounted onto a tab. In this case, since the entire surface of the silver plating on the suspending lead 1e is in a crushed state, it is possible to prevent contact of the semiconductor chip with the silver plating when mounting the chip onto the tab. Consequently, in a die bonding process, the semiconductor chip can slide on the tab without contacting the silver plating and thereby making it possible to diminish damage to the semiconductor chip when mounted onto the tab and hence to possibly prevent cracking or chipping of the chip when assembling the semiconductor device.

Abstract: A semiconductor chip is mounted on a tab, leads alternately arranged around the tab are electrically connected to electrodes of the semiconductor chip via bonding wires, and encapsulating resin encapsulates the semiconductor chip and bonding wires. The lower surfaces of the leads are exposed at the outer periphery of the back surface of the encapsulating resin to form external terminals. The lower surfaces of the leads are exposed at the back surface of the encapsulating resin located inwardly of the lower exposed surface of the leads to form external terminals. The cut surfaces of the leads are exposed at the cut surfaces of the encapsulating resin, while upper exposed surfaces of the leads are exposed from the encapsulating resin portion which is proximate to the cut surfaces thereof. Each of the upper exposed surfaces of the leads has a width smaller than the width of each of the lower exposed surfaces.

Abstract: A plasma etching apparatus includes a process container formed of a container main body and an upper casing combined with each other. A detaching device is provided to move the upper casing between a mounted position where the upper casing is put on the container main body, and a retreated position where the upper casing is removed from the container main body. The detaching device supports the upper casing to be rotatable, movable up and down, and movable in a lateral direction, relative to the container main body. The retreated position is arranged such that the upper casing does not interfere with the container main body when the upper casing is rotated there.

Abstract: There is disclosed an inductive coupling plasma processing apparatus having a processing chamber for subjecting a substrate G to a plasma processing, a dielectric wall portion constituting an upper part wall portion or a side wall portion of the chamber, a high-frequency antenna, disposed on a corresponding portion of the dielectric wall portion outside the chamber, for forming an induction field in the chamber, a cover member formed of a dielectric material disposed inside the dielectric wall portion to cover the dielectric wall portion, a heater for heating the cover member, and an insulating member for insulating between the dielectric wall portion and the heater, wherein a reaction product generated by a plasma is heated at a temperature without adhering to the cover member, and heat generated by the heater is prevented from being conducted to the dielectric wall portion.

Abstract: There is disclosed an inductive coupling plasma processing apparatus having a processing chamber for subjecting a substrate G to a plasma processing, a dielectric wall portion constituting an upper part wall portion or a side wall portion of the chamber, a high-frequency antenna, disposed on a corresponding portion of the dielectric wall portion outside the chamber, for forming an induction field in the chamber, a cover member formed of a dielectric material disposed inside the dielectric wall portion to cover the dielectric wall portion, a heater for heating the cover member, and an insulating member for insulating between the dielectric wall portion and the heater, wherein a reaction product generated by a plasma is heated at a temperature without adhering to the cover member, and heat generated by the heater is prevented from being conducted to the dielectric wall portion.

Abstract: An inductively-coupled-plasma-processing apparatus includes a main vessel which is partitioned into an antenna chamber and a process chamber by a partition structure. The antenna chamber includes an RF antenna and the process chamber includes a susceptor on which an LCD glass substrate is placed. The partition structure has a dielectric panel constituted of four segments supported by a cross-shaped supporting bracket. The supporting bracket is suspended from the ceiling of the main vessel by a plurality of suspenders. The supporting bracket is used as a case of a showerhead for supplying a process gas into the process chamber.

Abstract: A plasma etching apparatus includes a process container formed of a container main body and an upper casing combined with each other. A detaching device is provided to move the upper casing between a mounted position where the upper casing is put on the container main body, and a retreated position where the upper casing is removed from the container main body. The detaching device supports the upper casing to be rotatable, movable up and down, and movable in a lateral direction, relative to the container main body. The retreated position is arranged such that the upper casing does not interfere with the container main body when the upper casing is rotated there.

Abstract: The invention relates to a sheet feeding type wafer polishing machine which processes both surfaces of the wafer and outermost periphery of the wafer (edge part) in series, having two platens which are adhered to a polishing pad or a grinding stone and holding a wafer therebetween. The surface of the wafer is processed by rotating at least one of the two platens and wafer, wherein the diameters of the platens are bigger than the radius of the wafer and smaller than the diameter of the wafer, and the wafer is supported by at least three guide rollers which contact to the outermost periphery of the wafer. The present invention also provides an edge polishing and a surface polishing method which are carried out by the wafer processing machine.

Abstract: A hydraulic seal system includes a seal ring groove and a seal ring mounted in the seal ring groove. The seal ring and seal ring groove are rotatable relative to each other, and have sealing sides, respectively, which are put into pressure contact with each other by a sealing hydraulic pressure. The seal ring is made of a synthetic resin to have a fixed elasticity. The sealing side of the seal ring is formed into a convex curved surface with its radially central portion raised, so that when a hydraulic pressure is applied, the sealing side can be compressedly deformed to define a hydraulic pocket. Thus, the formation and retaining of an oil film at the pressure contact portions of the sealing sides is promoted.

Abstract: One end of a seal ring retained in a seal ring groove is formed in such a manner that it is offset radially inwardly from the other end, so that oil is permitted to leak by opening an abutment joint formed by the two ends in a condition in which no hydraulic pressure is applied. If a hydraulic pressure is supplied to bring a hydraulic actuator into an engaged state, the one end of the seal ring is deformed radially outwardly by the hydraulic pressure to come into close contact with a sealing surface and to close the abutment joint, thereby preventing the oil from-leaking past the oil ring. Consequently, upon engagement of the hydraulic actuator, a sealing property or salability of the oil can be assured, and upon releasing of the engagement of the hydraulic actuator, an oil leaking property of the seal ring can be provided, leaking property of the oil can be provided, thereby enhancing the responsiveness of the hydraulic actuator.