Abstract: A plasma generating method comprises: a first step of disposing a plurality of lateral electrodes at lateral sides of a plasma generating part in a vacuum chamber; a second step of respectively applying, to the lateral electrodes, high frequency electric powers of which frequencies are the same as one another and of which phases are different from one another, thereby to excite, in the plasma generating part, a high frequency rotating electric field to cause electrons under translational motions in the plasma generating part to present oscillating or rotating motions; and a third step of applying, to the plasma generating part, a magnetic field substantially at a right angle to the working plane of the high frequency rotating electric field, thereby to convert the translational movement of the electrons in the plasma generating part into revolving motions under oscillating or rotating motions by which the electrons revolve in the plasma generating part.

Abstract: At lateral sides of a plasma generating part under a vacuum, first to fourth lateral electrodes are so disposed as to surround the plasma generating part. High frequency electric power is supplied to the first lateral electrode from a first high frequency power supply, high frequency electric power is supplied to the second lateral electrode from the first high frequency power supply through a first delay circuit, high frequency electric power is supplied to the third lateral electrode from the first high frequency power supply through the first delay circuit and through a second delay circuit, and high frequency electric power is supplied to the fourth lateral electrode from the first high frequency power supply through the first and second delay circuits and through a third delay circuit.

Abstract: Magnetic coils are provided around a plasma generation chamber. To the plasma generation chamber is supplied a microwave which is generated by a microwave generator. Electron cyclotron resonance is caused by the interaction between a magnetic field produced by the magnetic coils and the microwave generated by the microwave generator, so as to accelerate electrons in the plasma generation chamber. The electrons thus accelerated generates a plasma. A reaction chamber is provided underneath the plasma generation chamber. The plasma generated in the plasma generation chamber is introduced to the reaction chamber to be used for etching a material on a sample stage. A reflex klystron is used as the microwave generator. By changing the cavity length of the reflex klystron, the resonance frequency of the cavity resonator is varied, thus modulating the frequency of the microwave supplied to the plasma generation chamber by the microwave generator.

Abstract: A dry etching method of a substrate or layer of a semiconductor or other material which includes the steps of providing a metallic chamber having an anode and a cathode which are spaced from each other and mounting the substrate or layer to be etched on the cathode, and applying a potential from a RF power supply to the cathode so that a plasma is generated between the anode and the cathode to produce a bulk region and sheath regions between the cathode and the anode. The frequency of the RF power supply is set at a level higher than 13.56 MHz under which the substrate or layer is subjected to etching with the ions. A polysilicon, SiN or Al alloy layer can be efficiently etched with a Cl-based etching gas.

Abstract: A method of correcting design patterns in cells, having hierarchial structure and corresponding to exposure patterns, for proximity effects when exposing resist coated on a substrate to a charged-particle beam or to light. A first frame zone is provided having a predetermined width inside the boundary of each cell, and a second frame zone is provided having a predetermined width inside the first frame zone. Proximity effect correction operations are performed such that a pattern in the second frame zone and a pattern inside the second frame zone are used as a pattern to be corrected and a pattern in the first frame zone is used as a reference pattern when correcting pattern data in each cell for proximity effects and a pattern in the first frame zone in each cell is added to the pattern to be corrected and a pattern in the second frame zone in each cell is used as a reference pattern when correcting pattern data in a cell directly overlying each cell for proximity effect.

Abstract: A scanning electron microscope is disclosed in which an objective lens includes a first pole piece and a second pole piece. The first pole piece is provided with a hole through which an electron beam passes, and is disposed between an electron gun for emitting the electron beam and the second pole piece. The second pole piece has a planar portion on which a specimen is placed, and the second pole piece being mounted on a supporting block movable in a plane substantially perpendicular to the projecting direction of the electron beam.

Abstract: In formation of a fine pattern with direct electron beam delineation, disclosed is a method of obtaining parameters on an electron scattering intensity distribution expressed with a double Gaussian distribution obtained when exposing a resist with an electron beam. A resist on a substrate is exposed with an electron beam in accordance with an evaluation pattern which comprises a plurality of basic checked patterns each comprising longitudinal and lateral exposed stripes. The basic checked patterns are successively arranged longitudinally and laterally at predetermined intervals on a plane so as to form a plurality of longitudinal pattern rows and lateral pattern rows, widths of the stripes of the basic checked patterns in each of the lateral pattern rows being successively changed so as to be different from each other.