Abstract: A semiconductor storage element includes: a semiconductor layer constituted of a line pattern with a predetermined width formed on a substrate; a quantum dot forming an electric charge storage layer formed on the semiconductor layer through a first insulating film serving as a tunnel insulating film; an impurity diffusion layer formed in a surface layer of the semiconductor layer so as to sandwich the quantum dot therebetween; and a control electrode formed on the quantum dot through a second insulating film.

Abstract: A multi-dot flash memory includes active areas arranged in a first direction, which extend to a second direction crossed to the first direction, the first and second direction being parallel to a surface of a semiconductor substrate, floating gates arranged in the first direction, which are provided above the active areas, a word line provided above the floating gates, which extends to the first direction, and bit lines provided between the floating gates, which extend to the second direction. Each of the floating gates has two side surfaces in the first direction, shapes of the two side surfaces are different from each other, and shapes of the facing surfaces of the floating gates which are adjacent to each other in the first direction are symmetrical.

Abstract: A separator is disclosed which enables to inject a non-aqueous electrolytic solution easily during production of batteries such as lithium ion secondary batteries and also enables to produce a battery which is excellent in various battery performances. The battery separator comprises a long porous film in which plural non-porous linear regions are arranged in a width direction of the film, at least one surface of the linear regions being a concave or convex surface is advantageously used as a battery separator for lithium secondary batteries or the like.

Abstract: A semiconductor storage device includes: a substrate having a semiconductor layer at least on a surface thereof; and a plurality of quantum dot elements forming a charge storage layer formed above the semiconductor layer via a first insulating film that becomes a tunnel insulating film in such a manner that the quantum dot elements are connected with a bit line in series, wherein each quantum dot element forms a single electron memory.

Abstract: A semiconductor storage element includes: a semiconductor layer constituted of a line pattern with a predetermined width formed on a substrate; a quantum dot forming an electric charge storage layer formed on the semiconductor layer through a first insulating film serving as a tunnel insulating film; an impurity diffusion layer formed in a surface layer of the semiconductor layer so as to sandwich the quantum dot therebetween; and a control electrode formed on the quantum dot through a second insulating film.

Abstract: A separator is disclosed which enables to inject a non-aqueous electrolytic solution easily during production of batteries such as lithium ion secondary batteries and also enables to produce a battery which is excellent in various battery performances. The battery separator comprises a long porous film in which plural non-porous linear regions are arranged in a width direction of the film, at least one surface of the linear regions being a concave or convex surface is advantageously used as a battery separator for lithium secondary batteries or the like.

Abstract: A failure analysis method according to the invention includes inputting the positions of failures in multiple wafers of an input device; preparing multiple sections in the multiple wafers; calculating feature amounts, which are represented by at least one numerical value representing a distribution of the failures in the multiple wafers, for each of the multiple sections; and representing by a first numerical value, the degree of similarity between the multiple wafers in terms of the feature amounts. Subsequently, the method includes detecting another wafer, which has the first numerical value greater than a predetermined first threshold, for each of the multiple wafers and forming a similar wafer group of multiple wafers with similar distributions of the failures.

Abstract: A porous insulating film comprising a highly heat resistant resin film having a fine porous structure with a mean pore size of 0.01-5 ?m in at least the center of the film, and a porosity of 15-80%. A laminate is prepared by forming a heat resistant adhesive layer or a conductive metal layer or an inorganic or metal substrate on one or both sides of the porous insulating film or by forming an inorganic or metal substrate on one side of the porous insulating film and a conductive metal layer on the other side.

Abstract: A porous insulating film comprising a highly heat resistant resin film having a fine porous structure with a mean pore size of 0.01-5 ?m in at least the center of the film, and a porosity of 15-80%. A laminate is prepared by forming a heat resistant adhesive layer or a conductive metal layer or an inorganic or metal substrate on one or both sides of the porous insulating film or by forming an inorganic or metal substrate on one side of the porous insulating film and a conductive metal layer on the other side.

Abstract: A porous insulating film comprising a highly heat resistant resin film having a fine porous structure with a mean pore size of 0.01-5 ?m in at least the center of the film, and a porosity of 15-80%. A laminate is prepared by forming a heat resistant adhesive layer or a conductive metal layer or an inorganic or metal substrate on one or both sides of the porous insulating film or by forming an inorganic or metal substrate on one side of the porous insulating film and a conductive metal layer on the other side.

Abstract: A method for manufacturing a semiconductor device has measuring a finished state of a wafer in a completed process, estimating an in-surface tendency of the wafer based on a result of the measuring, estimating a surface characteristic of the wafer based on the estimated in-surface tendency, setting a process condition of a uncompleted process based on the estimated surface characteristic and controlling the uncompleted process based on the set process condition.

Abstract: A porous insulating film comprising a highly heat resistant resin film having a fine porous structure with a mean pore size of 0.01-5 ?m in at least the center of the film, and a porosity of 15-80%. A laminate is prepared by forming a heat resistant adhesive layer or a conductive metal layer or an inorganic or metal substrate on one or both sides of the porous insulating film or by forming an inorganic or metal substrate on one side of the porous insulating film and a conductive metal layer on the other side.

Abstract: Apparatus and method of predicting performance of a semiconductor manufacturing process and device, which reduces simulation resources to predict the performance distribution in the wafer and manufacturing method of a semiconductor device are disclosed.

Abstract: A failure analysis method according to the invention includes inputting the positions of failures in multiple wafers of an input device; preparing multiple sections in the multiple wafers; calculating feature amounts, which are represented by at least one numerical value representing a distribution of the failures in the multiple wafers, for each of the multiple sections; and representing by a first numerical value, the degree of similarity between the multiple wafers in terms of the feature amounts. Subsequently, the method includes detecting another wafer, which has the first numerical value greater than a predetermined first threshold, for each of the multiple wafers and forming a similar wafer group of multiple wafers with similar distributions of the failures.

Abstract: A porous insulating film comprising a highly heat resistant resin film having a fine porous structure with a mean pore size of 0.01-5 &mgr;m in at least the center of the film, and a porosity of 15-80%. A laminate is prepared by forming a heat resistant adhesive layer or a conductive metal layer or an inorganic or metal substrate on one or both sides of the porous insulating film or by forming an inorganic or metal substrate on one side of the porous insulating film and a conductive metal layer on the other side.

Abstract: A porous insulating film comprising a highly heat resistant resin film having a fine porous structure with a mean pore size of 0.01-5 &mgr;m in at least the center of the film, and a porosity of 15-80%. A laminate is prepared by forming a heat resistant adhesive layer or a conductive metal layer or an inorganic or metal substrate on one or both sides of the porous insulating film or by forming an inorganic or metal substrate on one side of the porous insulating film and a conductive metal layer on the other side.

Abstract: A device for turning on light allowing the brightness of an inverter-type illumination apparatus to be adjusted without having to install an additional oscillation circuit. The device comprises an active converter which generates a DC voltage from the commercial AC voltage and an inverter which switches the generated DC voltage, includes a capacitor connected in parallel with a discharge tube to be lighted, and supplies a high-frequency current to the discharge tube via a resonance circuit whose resonance frequency is determined according to the equivalent impedance of the discharge tube. The active converter has a triac adjusting the DC voltage, and switching elements of the inverter perform self-oscillation under control of the phase of the resonance current flowing through the resonance circuit.

Abstract: An illumination lighting apparatus has a resonance load circuit including a discharge tube, a power supply circuit for generating DC voltage from commercial AC voltage, and an inverter for converting the generated DC voltage into an AC voltage and supplying the AC voltage to the resonance load circuit. Further, a control circuit is provided which controls electric power supplied to the resonance load circuit in response to operating parameters of the discharge tube immediately after lighting of the discharge tube.

Abstract: A battery separator favorably employable for lithium secondary battery comprises at least one porous film in which 100 to 40,000 ppm of particles of silicon dioxide, aluminum oxide, magnesium oxide, zinc oxide or metal oxides containing at least two metal elements selected from the group consisting of Si, Al, Mg and Zn having a mean diameter of 0.1 to 10 &mgr;m are dispersed in a porous resin matrix.

Abstract: A porous insulating film comprising a highly heat resistant resin film having a fine porous structure with a mean pore size of 0.01-5 &mgr;m in at least the center of the film, and a porosity of 15-80%. A laminate is prepared by forming a heat resistant adhesive layer or a conductive metal layer or an inorganic or metal substrate on one or both sides of the porous insulating film or by forming an inorganic or metal substrate on one side of the porous insulating film and a conductive metal layer on the other side.