Abstract: A pattern data generation method according to an example of the present invention includes based on design pattern data of a circuit including a plurality of MIS transistors having the same gate size, identifying types of the plurality of MIS transistors, setting size specs for gate patterns of the plurality of MIS transistors, the size specs being different for different types of the MIS transistors, and verifying whether gate patterns of the MIS transistors predicted by simulation using mask pattern data for forming the MIS transistors satisfy the size specs.

Abstract: According to one aspect, a method is provided for preparing a photoresist mask set adapted to correct for critical dimension variations resulting from topography effects in a semiconductor device. A plurality of rules is established for correcting critical dimension variations resulting from topography effects associated with predetermined structural combinations. A photoresist mask set is then prepared according to rules corresponding to structural combinations present in a semiconductor device to be manufactured.

Abstract: An evaluation mask for evaluating a projection-type exposure apparatus, the mask including at least one diffraction grating pattern for producing a diffracted light of the positive first-order and a diffracted light of negative first-order, diffraction efficiencies of the diffracted lights being different respectively, one of the diffracted lights having a magnitude that is zero, and an image of the at least one diffraction grating pattern being projected onto a test substrate by the projection-type exposure apparatus, and a reference pattern for obtaining a reference image to measure a displacement of the image of the diffraction grating pattern, and an image of the reference pattern being projected onto the test substrate or the image detector by the projection-type exposure apparatus, wherein the images of the diffraction grating pattern and the reference pattern projected onto the test substrate or the image detector are used for evaluating the projection-type exposure apparatus.

Abstract: An evaluation mask for evaluating a projection-type exposure apparatus, the mask including at least one diffraction grating pattern for producing a diffracted light of the positive first-order and a diffracted light of negative first-order, diffraction efficiencies of the diffracted lights being different respectively, one of the diffracted lights having a magnitude that is zero, and an image of the at least one diffraction grating pattern being projected onto a test substrate by the projection-type exposure apparatus, and a reference pattern for obtaining a reference image to measure a displacement of the image of the diffraction grating pattern, and an image of the reference pattern being projected onto the test substrate or the image detector by the projection-type exposure apparatus, wherein the images of the diffraction grating pattern and the reference pattern projected onto the test substrate or the image detector are used for evaluating the projection-type exposure apparatus.

Abstract: The method of correcting a residual aberration of a projection optical system, which is used for projecting a pattern of a photo mask onto a photosensitive film located on a substrate, the method includes calculating an effect of a residual aberration on a given pattern on the basis of the residual aberration of the projection optical system obtained by measurement, calculating a moving amount of an adjustable aberration in the projection optical system such that the effect of the residual aberration becomes minimum in a given area, and moving the adjustable aberration in accordance with the calculated moving amount.

Abstract: An evaluation mask for evaluating a projection-type exposure apparatus, the mask including at least one diffraction grating pattern for producing a diffracted light of the positive first-order and a diffracted light of negative first-order, diffraction efficiencies of the diffracted lights being different respectively, one of the diffracted lights having a magnitude that is zero, and an image of the at least one diffraction grating pattern being projected onto a test substrate by the projection-type exposure apparatus, and a reference pattern for obtaining a reference image to measure a displacement of the image of the diffraction grating pattern, and an image of the reference pattern being projected onto the test substrate or the image detector by the projection-type exposure apparatus, wherein the images of the diffraction grating pattern and the reference pattern projected onto the test substrate or the image detector are used for evaluating the projection-type exposure apparatus.

Abstract: An evaluation mask for evaluating a projection-type exposure apparatus, the mask including at least one diffraction grating pattern for producing a diffracted light of the positive first-order and a diffracted light of negative first-order, diffraction efficiencies of the diffracted lights being different respectively, one of the diffracted lights having a magnitude that is zero, and an image of the at least one diffraction grating pattern being projected onto a test substrate by the projection-type exposure apparatus, and a reference pattern for obtaining a reference image to measure a displacement of the image of the diffraction grating pattern, and an image of the reference pattern being projected onto the test substrate or the image detector by the projection-type exposure apparatus, wherein the images of the diffraction grating pattern and the reference pattern projected onto the test substrate or the image detector are used for evaluating the projection-type exposure apparatus.

Abstract: The method of correcting a residual aberration of a projection optical system, which is used for projecting a pattern of a photo mask onto a photosensitive film located on a substrate, the method includes calculating an effect of a residual aberration on a given pattern on the basis of the residual aberration of the projection optical system obtained by measurement, calculating a moving amount of an adjustable aberration in the projection optical system such that the effect of the residual aberration becomes minimum in a given area, and moving the adjustable aberration in accordance with the calculated moving amount.