Patents by Inventor Kenji Konomi

Kenji Konomi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080044739
    Abstract: According to one aspect, a method is provided for preparing a photoresist mask set adapted to correct for critical dimension variations resulting from topography effects in a semiconductor device. A plurality of rules is established for correcting critical dimension variations resulting from topography effects associated with predetermined structural combinations. A photoresist mask set is then prepared according to rules corresponding to structural combinations present in a semiconductor device to be manufactured.
    Type: Application
    Filed: August 17, 2006
    Publication date: February 21, 2008
    Applicant: Toshiba America Electronic Components, Inc.
    Inventors: Kenji Konomi, Seiji Nakagawa
  • Patent number: 6940585
    Abstract: An evaluation mask for evaluating a projection-type exposure apparatus, the mask including at least one diffraction grating pattern for producing a diffracted light of the positive first-order and a diffracted light of negative first-order, diffraction efficiencies of the diffracted lights being different respectively, one of the diffracted lights having a magnitude that is zero, and an image of the at least one diffraction grating pattern being projected onto a test substrate by the projection-type exposure apparatus, and a reference pattern for obtaining a reference image to measure a displacement of the image of the diffraction grating pattern, and an image of the reference pattern being projected onto the test substrate or the image detector by the projection-type exposure apparatus, wherein the images of the diffraction grating pattern and the reference pattern projected onto the test substrate or the image detector are used for evaluating the projection-type exposure apparatus.
    Type: Grant
    Filed: September 9, 2003
    Date of Patent: September 6, 2005
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroshi Nomura, Kenji Konomi
  • Publication number: 20050036122
    Abstract: An evaluation mask for evaluating a projection-type exposure apparatus, the mask including at least one diffraction grating pattern for producing a diffracted light of the positive first-order and a diffracted light of negative first-order, diffraction efficiencies of the diffracted lights being different respectively, one of the diffracted lights having a magnitude that is zero, and an image of the at least one diffraction grating pattern being projected onto a test substrate by the projection-type exposure apparatus, and a reference pattern for obtaining a reference image to measure a displacement of the image of the diffraction grating pattern, and an image of the reference pattern being projected onto the test substrate or the image detector by the projection-type exposure apparatus, wherein the images of the diffraction grating pattern and the reference pattern projected onto the test substrate or the image detector are used for evaluating the projection-type exposure apparatus.
    Type: Application
    Filed: September 9, 2003
    Publication date: February 17, 2005
    Inventors: Hiroshi Nomura, Kenji Konomi
  • Patent number: 6741327
    Abstract: The method of correcting a residual aberration of a projection optical system, which is used for projecting a pattern of a photo mask onto a photosensitive film located on a substrate, the method includes calculating an effect of a residual aberration on a given pattern on the basis of the residual aberration of the projection optical system obtained by measurement, calculating a moving amount of an adjustable aberration in the projection optical system such that the effect of the residual aberration becomes minimum in a given area, and moving the adjustable aberration in accordance with the calculated moving amount.
    Type: Grant
    Filed: June 29, 2001
    Date of Patent: May 25, 2004
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroshi Nomura, Kenji Konomi, Manabu Takakuwa
  • Patent number: 6674511
    Abstract: An evaluation mask for evaluating a projection-type exposure apparatus, the mask including at least one diffraction grating pattern for producing a diffracted light of the positive first-order and a diffracted light of negative first-order, diffraction efficiencies of the diffracted lights being different respectively, one of the diffracted lights having a magnitude that is zero, and an image of the at least one diffraction grating pattern being projected onto a test substrate by the projection-type exposure apparatus, and a reference pattern for obtaining a reference image to measure a displacement of the image of the diffraction grating pattern, and an image of the reference pattern being projected onto the test substrate or the image detector by the projection-type exposure apparatus, wherein the images of the diffraction grating pattern and the reference pattern projected onto the test substrate or the image detector are used for evaluating the projection-type exposure apparatus.
    Type: Grant
    Filed: August 8, 2001
    Date of Patent: January 6, 2004
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Hiroshi Nomura, Kenji Konomi
  • Publication number: 20020021434
    Abstract: An evaluation mask for evaluating a projection-type exposure apparatus, the mask including at least one diffraction grating pattern for producing a diffracted light of the positive first-order and a diffracted light of negative first-order, diffraction efficiencies of the diffracted lights being different respectively, one of the diffracted lights having a magnitude that is zero, and an image of the at least one diffraction grating pattern being projected onto a test substrate by the projection-type exposure apparatus, and a reference pattern for obtaining a reference image to measure a displacement of the image of the diffraction grating pattern, and an image of the reference pattern being projected onto the test substrate or the image detector by the projection-type exposure apparatus, wherein the images of the diffraction grating pattern and the reference pattern projected onto the test substrate or the image detector are used for evaluating the projection-type exposure apparatus.
    Type: Application
    Filed: August 8, 2001
    Publication date: February 21, 2002
    Applicant: KABUSHIKI KASIHA
    Inventors: Hiroshi Nomura, Kenji Konomi
  • Publication number: 20020001071
    Abstract: The method of correcting a residual aberration of a projection optical system, which is used for projecting a pattern of a photo mask onto a photosensitive film located on a substrate, the method includes calculating an effect of a residual aberration on a given pattern on the basis of the residual aberration of the projection optical system obtained by measurement, calculating a moving amount of an adjustable aberration in the projection optical system such that the effect of the residual aberration becomes minimum in a given area, and moving the adjustable aberration in accordance with the calculated moving amount.
    Type: Application
    Filed: June 29, 2001
    Publication date: January 3, 2002
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hiroshi Nomura, Kenji Konomi, Manabu Takakuwa