Abstract: A memory card (1) including an electrically rewritable non-volatile memory (4), a data processor (3) having a function of executing instructions, managing the allocation of file data in the non-volatile memory, an interface control circuit (2) having a function of establishing external interface, for controlling the execution of instructions by the data processor in response to external commands and for controlling access to the non-volatile memory and a buffer memory (7) for temporarily storing the file data, wherein the interface control circuit includes command control means for decoding a first command supplied externally and for instructing the data processor to fetch an instruction from the buffer memory and to operate.

Abstract: A memory card (1) includes an electrically rewritable non-volatile memory (4), a data processor (3) having a function of executing instructions and managing the allocation of file data in the non-volatile memory, an interface control circuit (2) having a function of establishing an external interface, for controlling the execution of instructions by the data processor in response to external commands and for controlling access to the non-volatile memory and a buffer memory (7) for temporarily storing the file data. The interface control circuit includes command control means for decoding a first command externally supplied and for instructing the data processor to fetch an instruction from the buffer memory and to operate.

Abstract: In a card storage device containing a non-volatile memory and a buffer memory, the buffer memory includes a plurality of banks. Data is transferred sequentially from a host CPU to the banks of the buffer memory, data is transferred to the non-volatile memory from a bank that becomes full, a write operation is started when one unit of data to be written into the non-volatile memory at a time has been transferred and, without waiting for the data to be written, the next write data is transferred from the host CPU to a bank from which write data has been transferred.

Abstract: The inventive DINOR flash memory includes a plurality of blocks, a spare block and a spare word line block, which are formed on a plurality of electrically isolated P-type wells. When a word line-to-well short-circuit takes place in a certain block and another block is selected, the block causing the word line-to-well short-circuit is brought into a non-selected state. Thus, no leakage takes place in the block causing the word line-to-well short-circuit, to exert no bad influence on the selected block.