Abstract: A thin film transistor and a method of fabricating the transistor are disclosed. The gate electrode of this thin film transistor is made small in thickness so that active hydrogen for hydrogenating passivation can penetrate in a surface layer of channel region having substantially uniform thickness, through the gate electrode. Thus, hydrogenation can be effectively carried out for the thin film transistor, independently of the length of a channel formed in the transistor.

Abstract: Complementary thin fillm transistors (C-TFT) formed on an insulating substrate, comprising a pair of highly resistive n-type silicon islands, a pair of heavily doped n-type regions formed in one of the islands to form source and drain regions of n-channel TFT, a pair of contacts formed on the surface of the other island and establishing a high potential barrier when the underlying region is of n-type and a low potential barrier when the underlying region is inverted to be of p-type. The process for manufacturing complementary TFTs can be simplified significantly.

Abstract: In an electron storage ring comprising: a bending magnet for bending an electron beam; a focusing magnet for focusing the electron beam; a radio-frequency accelerating cavity for accelerating electrons; and a vacuum chamber, a voltage component fluctuating with time, e.g., sinusoidally is superposed on the power source of the focusing magnet, in case the electron beam is to be accelerated, to fluctuate the intensity of the focusing magnet. As a result, the number of the betatron oscillation of electron can be changed each time the electrons pass through the focusing magnet so that the damping rate can become higher than the growth rate of the instability of the beam to suppress the instability of the electron beam.

Abstract: This invention relates to the structure of a field effect transistor, which is suitable for liquid crystal display of an active matrix scheme and there is disclosed a new structure for the field effect transistor, in which at least one of the source region and the drain region is of multi-layered structure, in which high impurity concentration portions and low impurity concentration portions are alternately superposed on each other.

Abstract: In an accelerator for accelerating charged particles by using electro-magnetic wave, in which a plurality of cells are disposed periodically, a washer-shaped electrode separated from the cylinder wall is located at the boundary of each of the cells, which electrode has a hole, through which accelerated charged particles pass, at its center portion and an approximately uniform thickness. The thickness and the diameter of said washer-shaped electrode and the gap between said washer-shaped electrode and the inner surface of said cylinder are so chosen that the average strength of the accelerating electric field is highest. The peak strengths of the electric field are approximately equal at the outer and inner peripheral portions of said washer-shaped electrode.

Abstract: A heat-conducting cooling module for cooling a semiconductor substrate in an integrated circuit package assembly in which a semiconductor substrate is mounted on a base board by small solder pellets, and which contains a single substrate or laminated substrates. A heat-conducting relay member is provided between the semiconductor substrate and a housing so as to be pressed onto the semiconductor substrate. At least either one of the housing or the heat-conducting relay member is made of a sintered product which includes silicon carbide as a chief component.

Abstract: Method and apparatus for estimating the location of an unknown sound source in a structure to be monitored, wherein sounds from at least three known sound sources are detected by a plurality of detectors. At least one of peak value data and signal arrival time data derived from the outputs of the detectors are classified for each of the known sound sources and stored in a storage. Pattern differences from each of the known sound sources to a number of predetermined positions respectively, are calculated to prepare for each of the known sound sources a correspondence table indicating relationships between the calculated pattern difference and the real distances from the known sound source positions to the predetermined positions, the correspondence table being stored in a storage. The pattern differences for each of the known sound source positions are calculated on the basis of the sound signal data derived through detection of a sound from an unknown sound source and the data stored in the storage.

Abstract: Disclosed is a field controlled thyristor in which a first semiconductor region of N.sup.+ -type, a second semiconductor region of N-type, third semiconductor regions of P-type, a fourth semiconductor region of N.sup.- -type and a fifth semiconductor region of P.sup.+ -type are formed in a semiconductor substrate having two main surfaces, the first, second and third semiconductor regions being exposed in the first main surface and the fifth semiconductor region being exposed in the second main surface; and the third semiconductor regions of P-type are spaced from each other by a predetermined spacing. The third semiconductor regions are connected with surface-exposed semiconductor regions exposed in the first main surface. The impurity concentration in the second semiconductor region decreases from the first semiconductor region toward the third semiconductor region so that a low forward voltage drop can be achieved along with a high reverse blocking voltage.

Abstract: A switching control circuit includes a first field controlled thyristor having a gate and a cathode between which a backward bias voltage source and a second field controlled thyristor are connected in series. Conduction of the second field controlled thyristor is controlled by controlling a voltage applied across the gate and the cathode, thereby to control conduction of the first field controlled thyristor. A large load current can be positively and safely turned on and off by a relatively small control current or voltage.

Abstract: An improvement in a semiconductor switching device is disclosed which comprises a semiconductor substrate of a first conductivity type, an anode region of a second conductivity type formed in the semiconductor substrate adjacent to a major surface thereof, a gate region of the second conductivity type formed a distance from the anode region, and a cathode region of the first conductivity type formed in the gate region and having a higher impurity concentration than the semiconductor substrate. A channel region is formed immediately below the cathode region thereby to directly contact the cathode region to the semiconductor substrate. A current path extending from the anode region to the cathode region through the semiconductor substrate is interrupted by a depletion layer produced in the vicinity of the channel region upon application of a reverse bias across a pn-junction formed between the gate region and the cathode region.

Abstract: A field controlled thyristor is disclosed which comprises a first emitter region exposed to one main surface of a semiconductor substrate and having a first conductivity type, a second emitter region exposed to the other main surface of the substrate and having a second conductivity type, a base region connecting the first and the second emitter region, and a gate region provided in the base region. The gate region consists of a slab-like first portion disposed parallel to both the emitter and a second portion connecting the first slab-like portion with one of the main surfaces of the semiconductor substrate. The impurity concentration of the base region is higher in the portion of the base region nearer to the emitter region having the same conductivity type as that of the base region than in the portion of the base region nearer to the emitter region having the opposite conductivity type to that of the base region.

Abstract: A semiconductor substrate having a single crystal semiconductor layer of one conductivity type exposed to the surface thereof is maintained at a temperature lower than the temperature at which the semiconductors is precipitated from the gas phase. In this state, a gas of a starting material of a semiconductor, a gas containing impurities capable of forming a semiconductor of the other conductivity type and a carrier gas therefore are fed onto the semiconductor substrate. Then, the semiconductor substrate is heated to form an amorphous or polycrystalline semiconductor layer of the other conductivity type on the semiconductor substrate.

Abstract: A semiconductor device has one layer of a diode formed by diffusion of an impurity from a polycrystalline layer portion formed on a region in which the layer is to be formed. The polycrystalline layer portion is composed of two layers, the resistivity of the polycrystalline layer closer to the above-mentioned one layer of the diode being higher than that of the other polycrystalline layer.