Abstract: After exposure of a divided area on a wafer is completed, for exposure of the next divided area, a control unit sends configuration information on control parameters necessary to expose the next divided area to a stage control system, sometime before the stage control system begins deceleration of a reticle stage and a wafer stage in a scanning direction. Therefore, both stages do not have to be suspended before acceleration for the stage control system to receive the configuration information on control parameters necessary to expose the next divided area, and since suspension time is not required, throughput can be improved. In this case, no serious problems occur, so the performance of other devices is not disturbed.

Abstract: A pattern region of a working reticle is divided into existing pattern portions and newly-forming pattern portions. With respect to the existing pattern portions, already-formed master reticle patterns are reduction-projected while stitching screens using an optical-type projection exposure apparatus. With respect to the newly-forming portions, enlarged patterns are formed by an electron beam drawing apparatus to form new master reticles, and reduced images of the newly formed master reticles are exposed while stitching screens using an optical-type projection exposure apparatus.

Abstract: There are provided an exposure method and an exposure apparatus in which the influence of vibration is not mutually transmitted so much when two movable stages are used. X axis sliders (19A, 20A) are arranged movably in the X direction on both sides in the Y direction of a wafer base (13). A first Y axis slider (16A) is arranged movably in the Y direction for the X axis sliders (19A, 20A). A first wafer stage (WST1) is arranged movably in the Y direction (scanning direction) along the Y axis slider (16A). X axis sliders (19B, 20B) are arranged in parallel to the X axis sliders (19A, 20A). A second Y axis slider (16B) is arranged for the X axis sliders (19B, 20B). A second wafer stage (WST2) is arranged movably along the Y axis slider (16B). When exposure is performed on the side of the first wafer stage (WST1), wafer exchange or wafer alignment is performed on the side of the second wafer stage (WST2).

Abstract: A scanning exposure apparatus exposes a sensitive substrate by projecting a pattern formed on a mask onto the sensitive substrate while moving the substrate. The apparatus includes a projection system, a stage system, a first detector and a control system. The projection system is disposed in a path of an exposure beam and projects a pattern image onto the substrate. The stage system is disposed on an image plane side of the projection system, and has first and second stages, each of which is movable independently in a plane while holding the substrate. The first detector detects focusing information of a vicinity of an outer circumference of the substrate during a detecting operation. The control system controls the stage system to perform the detecting operation with the first stage, while performing a first exposure operation with the second stage, the substrate held by the second stage being exposed in the first exposure operation.

Abstract: When a reticle stage capable of moving while holding a reticle is at a predetermined unloading position, an unloading arm performs unloading of a reticle. Also, the instant or immediately after the reticle is separated from the reticle stage by the unloading arm, the reticle stage is moved to a predetermined loading position where a reticle is loaded onto the reticle stage by a loading arm. This allows the reticle to be loaded onto the reticle stage before the unloading arm completely withdraws from the unloading position, which reduces the downtime between the retile unloading and the reticle loading. Accordingly, the throughput of the exposure apparatus can be improved, since the time required for reticle exchange is reduced.

Abstract: An exposure apparatus includes a projection optical system, which projects an image of a pattern of a mask onto a substrate, and a substrate stage which holds the substrate and positions the substrate in both first and second intersecting directions. The apparatus also includes first and second interferometers which respectively detect positions in the first and second directions of the substrate stage, and a temperature-control device having first, second, and third blower outlets to supply temperature-controlled gas to an optical path of a measurement beam of the first interferometer, to an optical path of a measurement beam of the second interferometer, and onto the substrate, respectively.

Abstract: An exposure method is disclosed, in which a surface of a wafer can be conformed to an image plane highly accurately even when an angle of inclination of a running surface of a wafer stage is varied when a pattern for a semiconductor device or the like is transferred onto the wafer in accordance with the scanning exposure system. The focusing is performed in an exposure area on the basis of a focus position detected in a pre-reading area in which the focus position can be detected highly accurately although the detection range is narrow, disposed in front of the exposure area on the wafer in the scanning direction. In order to allow the surface of the wafer to be included in the detection range of the focus position in the pre-reading area, the focus position of the wafer is roughly conformed to the image plane on the basis of a result of detection at a rough detecting point for roughly detecting the focus position in front of the pre-reading area with a wide detection range.

Abstract: A scan type projection exposure apparatus which includes an illumination optical system for forming a slit-shaped illumination area on a pattern on a mask by using illuminating light, and a projection optical system for forming an image of a portion of the pattern in the illumination area on a substrate, includes: a mask stage which moves at least in one direction while holding the mask; a substrate stage which moves two-dimensionally while holding the substrate; a control system for synchronously scanning the mask stage and the substrate stage; and an image forming performance adjusting system for adjusting image forming performance of the projection optical system and having a component placed in an area through which the illuminating light incident from the illumination area on the mask to the projection optical system does not pass.

Abstract: An exposure apparatus and method displace first and second object holders over a base surface that extends in X- and Y-directions. The first object holder can be displaced from a third area to a second area by using a first displacement unit. The second object holder can be displaced from a first area to the second area by using a second displacement unit. The second area is located between the first and third areas. The first and second object holders are alternately coupled to the second displacement unit, such that the first object holder can be displaced from the second area to the first area using the second displacement unit. The first and second object holders also are alternately coupled to the first displacement unit, such that the second object holder can be displaced from the second area to the third area using the first displacement unit.

Abstract: A high exposure accuracy is obtained while mitigating the influence of vibration by using an exposure method and an exposure apparatus. Columns (59A, 59B) are installed on a base plate (12), a reticle base (62) is supported at the inside of the columns (59A, 59B) by the aid of variable mount sections (61A, 61B) having high rigidity, a finely movable stage (63) is movably placed on the reticle base.. (62) by the aid of air bearings, and a reticle (R1) as an exposure objective is placed on the finely movable stage (63). A coarsely movable stage (64) is hung on a bottom surface of a support plate (66) arranged over the reticle base (62) in a state capable of being driven in a scanning direction. The finely movable stage (63) is driven by the coarsely movable stage (64) in the scanning direction in a non-contact state with respect to the reticle base (62).

Abstract: An exposure method, wherein a defocus quantity on the surface of a substrate to be exposed with respect to an image plane of a projection optical system is detected highly accurately even during exposing without lowering throughput much and focusing is made with an automatic focusing method. A first oblique-incident AF sensor including an illumination slit unit (54a) through an optical member (63a) and a second oblique-incident AF sensor including an illumination slit unit (54b) through an optical member (63b) are used to apply slit images (F1f, F2f) onto common measuring points and focus positions are measured respectively. One half of the difference between the two measured values is regarded as a drift and the drift is corrected for values measured by the AF sensors; the first or second AF sensor is then used to perform a focusing by the automatic focusing method.

Abstract: Disclosed is a projection exposure apparatus by a scan-exposure method. The apparatus includes an illuminating means for illuminating a mask transfer region,with illumination light for an exposure through an aperture of a variable field stop disposed in a position substantially conjugate to the mask; a driving means for configuring the aperture of the variable field stop in a rectangular shape (having edges orthogonal to a direction of the scan-exposure) and simultaneously making variable a width of the rectangular aperture of the stop in a widthwise direction (the scan-exposure direction) of the transfer region (pattern forming region) on the mask; and a control means for controlling the driving means to change a width of the rectangular aperture of the variable field stop in interlock with variations in position of the variable field stop on the mask transfer region which varies due to the one-dimensional movements of the mask stage.

Abstract: A countermass stroke reduction assembly is provided. The assembly generally includes a base supporting one or more stages and first and second countermasses. Alternatively, first and second countermasses could be mounted separately from the base. The first and second stages move in one or more degrees of freedom. The countermasses move in at least one degree of freedom. In order to minimize the stroke of the countermasses, a drift velocity and y-intercept are determined off-line from an average position line for the countermass. An initial velocity equal in magnitude but opposite in sense to the drift velocity is then imparted to the countermass at the start of operation. Alternatively or additionally, an initial position offset equal and opposite to the y-intercept may be provided at the start of operation.

Abstract: A reflective member is fixedly or movably provided near the pupil plane of a projection optical system with which a projection exposure apparatus is equipped. A collimated measuring beam with an exposure wavelength is incident from the object plane side or image plane side of the projection optical system, and the intensity of the beam reflected by the reflective member is detected photoelectrically to measure a value corresponding to the attenuation factor (transmissivity or reflectivity) of the projection optical system or the variation with time of the attenuation factor (transmissivity or reflectivity) of the projection optical system.

Abstract: A stage is driven along guide surfaces of a supporting member with a stator that is provided independent from the support member vibration-wise and a mover connected to the stage. In addition, when a drive amount of the supporting member exceeds a predetermined amount in, for example, the vertical direction, a connection between the stage and the mover by a connection mechanism is released. That is, the connection between the stage and the mover is released before the mover connected to the stage on the supporting member comes into contact with the stator and both parts are put under a large stress, which can prevent the mover and stator from being damaged. Furthermore, since the stator is provided independent from the support member vibration-wise, position control of the stage can be preformed with high precision. Accordingly, the stage can be driven stably, for over a long period of time.

Abstract: A projection exposure apparatus for exposing a photosensitive substrate with a pattern on a circular mask by projection through a projection optical system. The apparatus includes a prealignment stage for previously correcting an error of the circular mask in its rotational direction, and a transport arm and a rotatable arm for transporting the circular mask from the prealignment stage to a mask stage. The prealignment stage includes an optical detecting system for detecting the rotational error of the circular mask from a predetermined orientation on the prealignment stage, a rotatable stage for rotating the circular mask on the prealignment stage, and a unit for controlling the rotatable stage on the basis of the rotational error so that the circular mask has the predetermined orientation. Orientational adjustment can be previously performed before importing the circular mask to the mask stage of the projection exposure apparatus.

Abstract: In a scanning exposure apparatus and method, first and second interferometers of an interferometer system monitor first and second stages of a stage system, one of which holds a mask and the other of which holds a substrate. The first stage is moved at a first scanning speed during scanning exposure, and the second stage is moved at a second scanning speed during the scanning exposure, the speeds differing in accordance with a projecting magnification of a projection unit. The first stage is moved in accordance with a deviation, obtained by using the interferometer system, between the first stage and the second stage in a direction other than the scanning direction during the scanning exposure.

Abstract: An exposure apparatus transfers an image of a pattern on a reticle onto a wafer W by synchronously scanning the reticle and the wafer with respect to a projection optical system in a state in which the reticle is illuminated with an exposure light beam from an exposure light source subjected to pulse light emission via a fly's eye lens, a movable blind, a main condenser lens system, and a fixed blind. First and second uneven illuminance-correcting plates, on which shielding line groups for correcting convex and concave uneven illuminance are depicted, are arranged at a position defocused from a conjugate plane with respect to a pattern plane of the reticle. A third correcting plate for roughly correcting uneven illuminance is arranged at a position further defocused therefrom. It is possible to enhance the uniformity of the totalized exposure amount on the wafer or the telecentricity when the exposure is performed in accordance with the scanning exposure system.

Abstract: A scanning exposure apparatus and method thereof for maintaining a desired shape of a shot area exposed on a photosensitive substrate where an angle formed by the mirrors of interferometric systems for measuring the position of a stage and/or the angle formed by the running direction of a wafer stage and a reference mark plate is changed. A reticle on a reticle minute drive stage is scanned relative to an illuminated region and a wafer on a Z&thgr;-axis drive stage is scanned relative to an exposure region in synchronization with the scanning of the reticle. Thus, a shot area SA on the wafer is exposed to light carrying a pattern image of the reticle. The angle of rotation of a mirror facing in the non-scanning direction of the Z&thgr;-axis drive stage is calculated based on measurement values of two interferometers. The angle of rotation of a mirror facing in the non-scanning direction of the reticle minute drive stage is calculated based on measurement values of two interferometers.

Abstract: A pattern region of a working reticle is divided into existing pattern portions and newly-forming pattern portions. With respect to the existing pattern portions, already-formed master reticle patterns are reduction-projected while stitching screens using an optical-type projection exposure apparatus. With respect to the newly-forming portions, enlarged patterns are formed by an electron beam drawing apparatus to form new master reticles, and reduced images of the newly formed master reticles are exposed while stitching screens using an optical-type projection exposure apparatus.