Abstract: There is provided a method of fabricating a semiconductor device, including the steps of (a) forming both a p-well region and an n-well region at a surface of a semiconductor substrate, and (b) forming an n-type epitaxial layer on both the p- and n-well regions so that the n-type epitaxial layer contains impurities therein at a concentration lower than a concentration of impurities contained in the n-well region. For instance, the n-type epitaxial layer is formed by chemical vapor deposition in which a process gas including phosphorus or arsenic compounds therein is used. In accordance with the method, it is possible to optimize threshold voltages of both n-type and p-type transistors in a low-impurity channel transistor at a smaller number of steps. This ensures reduction in fabrication cost and enhancement in a fabrication yield.

Abstract: A semiconductor device including a trench element separation structure and adapted to a high degree of integration without having crystal defects produced in a semiconductor substrate, and a method of manufacturing the same. The semiconductor device includes a trench element separation region in a prescribed region of the semiconductor substrate, the wall of the semiconductor substrate which forms an inside surface of a trench is covered with a first insulation film, and a second insulation film and a third insulation film are filled inside the trench being stacked in layers in this order.

Abstract: In a static random access memory cell including two cross-coupled drive MOS transistors and two transfer MOS transistors connected to the drive MOS transistors, a plurality of gate electrodes of the drive MOS transistors and the transfer MOS transistors are formed over a semiconductor substrate, and a plurality of source/drain impurity diffusion regions of the transistors are formed within the semiconductor substrate. A plurality of pocket regions of the same conductivity type as the semiconductor substrate are formed within the semiconductor substrate. Each of the pocket regions is adjacent to the source of one of the drive MOS transistors and beneath the gate electrode thereof. The impurity concentration of the pocket regions is larger than that of the semiconductor substrate.

Abstract: A static RAM which features an inclusion of a word line driving circuit shared by all the memory cells in the static RAM is disclosed. The static RAM is comprised of a plurality of four-transistor memory cells arranged in an array. Each of the memory cells includes first and second FETs respectively coupled to bit lines and controlled by word line potential. Further, each of the memory cells further comprises third and fourth cross-coupled FETs respectively coupled in series with the first and second FETs and forming a circuit having two stable states. The word line driving circuit reflects a stable state potential change of each of the plurality of memory cells, and controls an output voltage thereof which is applied to the plurality of memory cells in order to maintain the stable state potential in each of the plurality of memory cells.

Abstract: In a memory device of an SRAM, a threshold voltage (Vthn) of each driving MOS transistor consisting of the N-type MOS transistor is set larger than a threshold voltage (Vthp) of each MOS transistor for selecting an address consisting of the P-type MOS transistor.

Abstract: A trench isolation is formed in a silicon substrate for defining active areas assigned to circuit components, and has an upper surface lower than a gate oxide layer grown on the adjacent active area; when the trench isolation is formed, silicon oxide is removed from the periphery of the silicon substrate defining a trench, then the surface of the silicon substrate is oxidized so that the silicon oxide deeply penetrates from the periphery into the silicon substrate, and, thereafter, insulating material fills the secondary trench defined by the silicon oxide; even through a gate electrode is patterned over the trench isolation, a pattern image for the gate electrode is exactly transferred to a photo-resist layer extending over the trench isolation, and the deeply penetrated silicon oxide prevents the channel region from concentration of electric field, thereby preventing the field effect transistor from the kinks and the inverse narrow width effect.

Abstract: Anti-falsification paper characterized in that thin fragments having brightness, which are obtained by fragmenting nacreous pigment coated paper coated with a nacreous pigment coating solution mainly comprising a nacreous pigment and a binder insoluble in cold water but soluble in hot water, are allowed to exist near the surface of a substrate sheet. Even when falsification is attempted by reproduction using a color copying machine, the colors of the thin fragments having brightness, which are mixed in paper, cannot be reproduced. Therefore, a genuine (original) can be easily distinguished from a forgery (copy). The thin fragments are firmly bonded to paper by the action of the binder, and fall-off of the thin fragments does not occur at the time of printing. Even when anti-falsification paper becomes spoilage or waste paper, thin fragment with brightness does not adversely affect recovery of the pulp.

Abstract: The invention provides a process comprising treating a lanolin fatty acid with boric acid to convert hydroxy fatty acids therein to boric acid esters, subjecting the reaction mixture to vacuum distillation to fractionate the boric acid esters of hydroxy fatty acids from non-hydroxy fatty acids, hydrolyzing the boric acid esters, and subjecting the hydrolysate to vacuum distillation to provide .alpha.-hydroxy fatty acids and .omega.-hydroxy fatty acids, the resultant respective lanolin fatty acids and esters, and cosmetic products and drug products for external use containing them.According to the invention, pale-colored, substantially odor-free lanolin fatty acids can be obtained easily and with high efficiency and these compounds can be effectively utilized in the pharmaceutical and cosmetic field.

Abstract: An intraperitoneal therapy apparatus for cauterizing tissues in a peritoneal cavity, which comprises a pneumoperitoneal device for introducing gas into the peritoneal cavity, thereby to inflate the cavity, a cautery device for cauterizing diseased tissues in the peritoneal cavity inflated by the pneumoperitoneal device, a suction device for removing fume from the peritoneal cavity, and a control circuit for controlling the pneumoperitoneal device and the suction device in accordance with an operation of the cautery device.

Abstract: A row addressing system is responsive to row address bits for selecting one of row addresses respectively assigned to word lines, and comprises a row address buffer unit for producing row address predecoded signals from said row address bits, a word line driving unit responsive to a row address decoded signal for selectively driving the word lines and a row address decoder unit including a plurality of row address decoder circuits coupled between the row address buffer unit and the word line driving unit, wherein each row address decoder circuit has a flip flop circuit coupled between a boosted voltage line and a pair of output nodes for maintaining voltage levels at the pair of output nodes, a reset circuit coupled between one of the output nodes and a ground voltage line and responsive to a precharging signal of a power voltage level for charging the other output node to the boosted voltage level, and a decoder coupled between the other output node and the ground voltage line and responsive to the row addre

Abstract: An insufflation apparatus intended to insufflate gas supplied from a gas supply source into a cavity of the human body through a gas insufflating pipe, comprising a switch valve for opening and closing a gas supply pipe extending from the gas supply source to the gas insufflating pipe, a cavity pressure measuring unit arranged in the gas supply pipe to measure the pressure in the body cavity, a pressure setting section for setting an intended pressure in the body cavity, an arithmetic unit for calculating the difference of a value measured by the cavity pressure measuring unit relative to the value of pressure set by the pressure setting section, and a changeover control unit for changing over the timings at which the switch valve is opened and closed on the basis of values thus calculated by the arithmetic unit.

Abstract: In the method and dissolving therapeutic apparatus for dissolving a coagulation within a living body, a medicinal liquid for dissolving the coagulation within the living body is injected into the living body, the injected medicinal liquid is left within the living body for a predetermined time and the fluid within the living body containing the coagulation dissolved by the medicinal liquid and the medicinal liquid is substantially all discharged out of the living body. A series of steps including at least respective injecting, leaving and discharging steps is repeated. Preferably, vibrating waves are radiated toward the coagulation during the leaving step.