Abstract: Provided is a defect observation apparatus capable of analyzing a structure such as an arrangement and a vertical relationship of a circuit pattern formed by using design information of a sample, creating a non-defective product image from a defect image based on the analysis results, and detecting a defect by comparative inspection.

Abstract: An object of the present invention is to provide a suitable method of observing a wafer edge by using an electron microscope. The electron microscope includes a column which can take an image in being tilted, and thus allows a wafer edge to be observed from an oblique direction.

Abstract: A system is provided that realizes both reduction in coordinate error and improvement in throughput and allows observation of a micro-defect. The system includes: a function of measuring an amount of displacement between preliminarily calculated coordinates and an actual specimen position; a function of optimizing a coordinate correction formula so as to minimize the amount of displacement from the measured amount of displacement; and a function of calculating variation of displacement between the preliminarily calculated coordinates and the actual specimen position by statistical processing. When a value of coordinate variation is sufficiently small with respect to the field of view of an image for observation, which is to be a defect observation image, the system acquires only the image for observation without performing acquisition of an image for search, which is to be a defect search image.

Abstract: Provided is a charged particle beam device that prevents the increase in processing trouble caused by deterioration in the reviewing performance (e.g., overlooking of defects) by detecting an operation abnormality affecting the performance of the device or a possibility of such an abnormality in the middle of a processing sequence of a sample and giving a feedback in real time. In each processing step of the charged particle beam device, monitoring items representing the operating status of the device (control status of the electron beam, an offset amount at the time of wafer positioning, a defect coordinate error offset amount, etc.) are monitored during the processing sequence of a sample and stored as history information. In the middle of the processing sequence, a comparative judgment between the value of each monitoring item and the past history information corresponding to the monitoring item is made according to preset judgment criteria.

Abstract: Disclosed is a method for reviewing defects in a large number of samples within a short period of time through the use of a defect review apparatus. To collect defect images steadily and at high throughput, a defect detection method is selected before imaging and set up for each of review target defects in the samples in accordance with the external characteristics of the samples that are calculated from the design information about the samples. The defect images are collected after an imaging sequence is set up for the defect images and reference images in such a manner as to reduce the time required for stage movement in accordance with the defect coordinates of the samples and the selected defect detection method.

Abstract: A method for classifying defects, including: calculating feature quantifies of defect image which is obtained by imaging a defect on a sample; classifying the defect image into a classified category by using information on the calculated feature quantities; displaying the classified defect image in a region on a display screen which is defined to the classified category; adding information on the classified category to the displayed defect image; transferring the displayed defect image which is added the information on the classified category to one of the other categories and displaying the transferred defect image in a region on the display screen which is defined to the one of the other categories; and changing information on the category.

Abstract: Disclosed is a method for reviewing defects in a large number of samples within a short period of time through the use of a defect review apparatus. To collect defect images steadily and at high throughput, a defect detection method is selected before imaging and set up for each of review target defects in the samples in accordance with the external characteristics of the samples that are calculated from the design information about the samples. The defect images are collected after an imaging sequence is set up for the defect images and reference images in such a manner as to reduce the time required for stage movement in accordance with the defect coordinates of the samples and the selected defect detection method.

Abstract: With respect to a charged particle beam device, the step size of focal point measure for executing autofocusing is optimized to a value that is optimal with respect to the spread of an approximation curve for a focal point measure distribution. The step size of focal point measure for executing autofocusing is corrected using an image feature obtained based on a layout image derived from an image obtained at a first magnification or from design data. Autofocusing is executed based on the obtained step size to carry out observation, measurement, or to image the sample under inspection.

Abstract: An object of the present invention is to provide a suitable method of observing a wafer edge by using an electron microscope. The electron microscope includes a column which can take an image in being tilted, and thus allows a wafer edge to be observed from an oblique direction.

Abstract: A data processing unit acquires a review image including a pattern defect on a substrate, compares the review image with a reference image thereby to extract a defect image, the reference image including no pattern defect, and performs an alignment between the review image and a self-layer design pattern image which is generated from design data belonging to the identical layer in a region corresponding to the review image. The data processing unit, then, based on result of the alignment, generates an another-layer design pattern image which is generated from design data belonging to another layer in the region corresponding to the review image, and, based on a synthesized image of the defect image and the another-layer design pattern image, determines the relative position relationship between the pattern defect and a pattern belonging to another layer, and judges the criticality based on the relative position relationship.

Abstract: A technique executes autofocus adjustment stably even when a plurality of patterns or foreign matter capable of being imaged only by a specific detector are included independently. Such an image as a concavo-convex image having a weak contrast can be picked up. The technique can automatically focus such an image even when it is difficult to find a focus position in the image. A scanning electron microscope includes a plurality of detectors for detecting secondary signals from a specimen when irradiated with an electron beam, and a calculation unit for combining the signals obtained from the detectors. At least two of the detectors are provided to be symmetric with respect to the electron beam. The focus of the electron beam is adjusted based on the signals of the detectors or on a signal corresponding to a combination of the signals.

Abstract: A data processing unit acquires a review image including a pattern defect on a substrate, compares the review image with a reference image thereby to extract a defect image, the reference image including no pattern defect, and performs an alignment between the review image and a self-layer design pattern image which is generated from design data belonging to the identical layer in a region corresponding to the review image. The data processing unit, then, based on result of the alignment, generates an another-layer design pattern image which is generated from design data belonging to another layer in the region corresponding to the review image, and, based on a synthesized image of the defect image and the another-layer design pattern image, determines the relative position relationship between the pattern defect and a pattern belonging to another layer, and judges the criticality based on the relative position relationship.

Abstract: An inspection method and an inspection tool are capable of detecting a defect on a specimen. More particularly, the examples relate to an inspection method and an inspection tool for easily setting an inspection condition to be used in a defect inspection of an inspected pattern such as a semiconductor wafer, a liquid crystal display, or a photomask.

Abstract: A surface observation apparatus is achieved, which enables even a beginner to easily select an optimal evaluation indicator for each of various patterns to be evaluated without a trial and error approach. A plurality of images to be evaluated are input from an image processing unit (114) to an evaluation image input unit (113a) (in step 901). The input images to be evaluated are displayed on a display (115). A user rearranges the images in accordance with an evaluation criterion of the user while referencing the display (115), and defines an evaluation criterion (in step 902). Evaluation values are calculated for the input images (to be evaluated) using a plurality of evaluation indicators (in step 903). The evaluation values for each of the evaluation indicators are compared with the evaluation criterion defined by the user, and correlation coefficients are then calculated (in step 904).

Abstract: A data processing unit acquires a review image including a pattern defect on a substrate, compares the review image with a reference image thereby to extract a defect image, the reference image including no pattern defect, and performs an alignment between the review image and a self-layer design pattern image which is generated from design data belonging to the identical layer in a region corresponding to the review image. The data processing unit, then, based on result of the alignment, generates an another-layer design pattern image which is generated from design data belonging to another layer in the region corresponding to the review image, and, based on a synthesized image of the defect image and the another-layer design pattern image, determines the relative position relationship between the pattern defect and a pattern belonging to another layer, and judges the criticality based on the relative position relationship.

Abstract: A method for reviewing a defect on a sample involves the steps of imaging a defect image containing the defect in first magnification by using an image acquisition unit, synthesizing a reference image not containing the defect from the defect image, comparing the defect image acquired with the reference image synthesized to detect a defect applicant, executing a processing for classifying the defect applicant into a defect and a normal portion and imaging only the portion identified as the detect in second magnification. The method makes it possible to specify a defect position without error from the image taken in the first magnification and to image the defect in the second magnification when a large number of defects are observed within a short time by using the image acquisition unit.

Abstract: A review apparatus for reviewing a specimen by moving the specimen to pre-calculated coordinate includes: a function to measure a deviation amount between the pre-calculated coordinates and coordinates of an actual position of the specimen; a function to optimize a coordinate correcting expression to minimize the measured deviation amount; and a function to determine that the deviation amounts have converged. When the deviation amounts have converged, the measurement for the coordinate-correcting-expression optimization is terminated, and a field of view necessary for the specimen to be within the field of view is set according to a convergence value of the calculated deviation amount.

Abstract: Provided is a defect observation apparatus capable of analyzing a structure such as an arrangement and a vertical relationship of a circuit pattern formed by using design information of a sample, creating a non-defective product image from a defect image based on the analysis results, and detecting a defect by comparative inspection.

Abstract: A review SEM is provided with a means to store sets of images acquired using multiple imaging conditions or sets of images for which multiple imaging conditions are simulated using simulation, a means to store defect position information for each set of images, and a means to store information relating to imaging conditions and process time. A means to estimate predicted capture rate and throughput with the individual imaging conditions for the sets of images from the stored information, and a means to display the results thereof are additionally provided.

Abstract: A defect review method and a defect review device using an electron microscope, reduce the number of user processes necessary to set automatic focal adjustment of an electron beam to provide easier sample observation. The review method comprises the steps of: performing focal adjustment for a plurality of coordinate positions pre-registered on the coordinate on an object under observation; creating a criterion for focal adjustment based on a focal position at each of the plurality of coordinate positions; setting a focal probe range based on a deviation between the criterion and the focal position; and determining an automatic focal adjustment range for defect detection on the object under observation based on the set focal probe range.