Abstract: A method for classifying defects, including: calculating feature quantifies of defect image which is obtained by imaging a defect on a sample; classifying the defect image into a classified category by using information on the calculated feature quantities; displaying the classified defect image in a region on a display screen which is defined to the classified category; adding information on the classified category to the displayed defect image; transferring the displayed defect image which is added the information on the classified category to one of the other categories and displaying the transferred defect image in a region on the display screen which is defined to the one of the other categories; and changing information on the category.

Abstract: A method which, while displacing the field-of-view, allows the image in a target area to be acquired without degradations such as out-of-focus of the image. Plural pieces of images are acquired before and after a target area while displacing the field-of-view. Next, these images are grouped into groups each of which includes several pieces of images, and integrated images on each group basis are created. Moreover, a relational expression is calculated which holds between image displacement quantity calculated by comparing the integrated images with each other and the number of the photographed pieces of images. Furthermore, image displacement quantities between the acquired plural pieces of images are calculated from this relational expression. Finally, these images are corrected by the amounts of these displacement quantities, then being integrated. This process allows reconfiguration of the image in the target area.

Abstract: According to the present invention, techniques including a method and apparatus for classifying and displaying images are provided. In an embodiment of the present invention a defect image classification method using inspected objects is provided. The method includes defect images obtained from at least one inspected object. Next a set of defect images is classified into a specified category, which has a feature. The defect images are arranged for display according to the feature and then displayed. The arranging of the defect images may also be based on an evaluation value for each defect image. Another embodiment provides a defect image classification method using inspected objects. Defect images are obtained from at least one inspected object.

Abstract: To acquire defect images even when a defect exists below an optically transparent film, an electron optical system of an electron microscope is set to a first imaging condition. A defect position of a specimen is set so as to fall within the visual field of the electron microscope, using position data of a defect of the specimen. The position of the defect is imaged by the electron microscope set to the first imaging condition to obtain a first image corresponding to the defect position. The first image is processed to determine whether a defect exists. The electron optical system is then set to a second imaging condition on the basis of the result of determination. A point imaged under the first imaging condition is imaged by the electron microscope set to the second imaging condition to acquire a second image corresponding to a defect position.

Abstract: The present invention has an analyzing unit including an image detection device for producing a plurality of images of a workpiece, a storage for storing detected images produced by the image detection device, and a display having a screen with a first area for displaying a plurality of detected images stored in the storage and a plurality of second areas for classifying the detected images according to features of the detected images, whereby the plurality of detected images are moved on the screen from the first area to selected second areas to classify the plurality of detected images in the second areas.

Abstract: Absolute coordinates designate position coordinates of a defect of a calibrating substrate, and inspection coordinates designate position coordinates of the defect of the calibrating substrate detected by an inspection apparatus. A deviation of the inspection coordinates with respect to the absolute coordinates is an error included in the inspection coordinates. When “nonrandom errors” are removed from the inspection coordinates, a “random error” is left in the inspection coordinates. The view size for defect search in a defect reviewing apparatus is set based on the random error. Further, a defect for fine alignment is selected based on the tendency of a detected value of the defect size of the calibrating substrate detected by the inspection apparatus.

Abstract: In a scanning electron microscope, scanning region is set to be narrow, upon which focused electron beam is scanned, so that the focused electron beam can be irradiated at the almost same position by plural numbers of times, irrespective of movement of the stage or of moving of the stage during braking thereof, and upon that region to be scanned is irradiated the focused electron beam, by plural numbers of times, while changing the focal position, thereby forming an image thereof. From the image formed is calculated out a section, from which a focus-in position can be calculated out, and then the focus-in position is calculated out from that calculated section.

Abstract: A manufacturing method of a microchemical chip made of a resin and having a micro channel, which comprises forming a photoresist film over the surface of one side of a metal support substratum, stacking a photomask for the formation of a channel pattern over the photoresist film, forming a minute-structure photoresist pattern over the metal support substratum by a photofabrication technology as a flat-sheet mold, disposing the flat-sheet mold or unit mold obtained by separating the flat-sheet mold on the bottom of a contour forming frame for resin molding, pouring a resin into the contour forming frame for resin molding and curing the resin to form a resin structure having a micro channel formed by the mold, and attaching the resin structure having a micro channel to a flat sheet to be a lid of the micro channel; and microchemical chips manufactured by this method.

Abstract: To acquire defect images even when a defect exists below an optically transparent film, an electron optical system of an electron microscope is set to a first imaging condition. A defect position of a specimen is set so as to fall within the visual field of the electron microscope, using position data of a defect of the specimen. The position of the defect is imaged by the electron microscope set to the first imaging condition to obtain a first image corresponding to the defect position. The first image is processed to determine whether a defect exists. The electron optical system is then set to a second imaging condition on the basis of the result of determination. A point imaged under the first imaging condition is imaged by the electron microscope set to the second imaging condition to acquire a second image corresponding to a defect position.

Abstract: In order to be able to detect an irradiation position of an electron beam matching a defect position and conduct composition analysis of a defect with high precision and high efficiency, in the present invention, when a composition analysis target defect is selected and irradiation conditions of the electron beam are set for EDX analysis, a low-resolution reference image of low resolution is acquired using the electron beam at a defect corresponding position corresponding to the position of this defect on a chip in the vicinity of a target chip including defects, and a low-resolution defect image of the same low resolution is next acquired at the defect position of the target chip. Then, by comparing these low-resolution images, the defect position is acquired, the electron beam is slanted and irradiated on this defect position to acquire a composition spectrum of the defect.

Abstract: In a wafer inspection and sampling system, wafer defects are detected and stored in a data store as defect data. Information is also provided, representative of clusters of defects on the wafer. A statistically based sampling of the defects is made to obtain a set of sampled defects. Subsequent detailed inspection and analysis of the sampled defects produces additional data which facilitate an understanding of process errors.

Abstract: In a wafer inspection and sampling system, wafer defects are detected and stored in a data store as defect data. Information is also provided, representative of clusters of defects on the wafer. A statistically based sampling of the defects is made to obtain a set of sampled defects. Subsequent detailed inspection and analysis of the sampled defects produces additional data which facilitate an understanding of process errors.

Abstract: In order to be able to detect an irradiation position of an electron beam matching a defect position and conduct composition analysis of a defect with high precision and high efficiency, in the present invention, when a composition analysis target defect is selected and irradiation conditions of the electron beam are set for EDX analysis, a low-resolution reference image of low resolution is acquired using the electron beam at a defect corresponding position corresponding to the position of this defect on a chip in the vicinity of a target chip including defects, and a low-resolution defect image of the same low resolution is next acquired at the defect position of the target chip. Then, by comparing these low-resolution images, the defect position is acquired, the electron beam is slanted and irradiated on this defect position to acquire a composition spectrum of the defect.

Abstract: During closer inspection with a local defect area being magnified, it is desirable to reduce image acquisition time by making the number of stage moves as few as possible so that a defect can be observed efficiently.

Abstract: To efficiently extract identification of apparatuses causing problems in a thin-film device manufacturing process, candidates for the problem-generating manufacturing apparatus are extracted by evaluating data obtained in relation to produced inspections and data indicating the states of the manufacturing apparatus, with respect to products that enable efficient extraction of problem-generated apparatuses in a thin-film devise manufacturing process. This facilitates inferring the identification of the problem-generating apparatus.

Abstract: To efficiently extract identification of apparatuses causing problems in a thin-film device manufacturing process, candidates for the problem-generating manufacturing apparatus are extracted by evaluating data obtained in relation to product inspections and data indicating the states of the manufacturing apparatus, with respect to products that enable efficient extraction of problem-generated apparatuses in a thin-film device manufacturing process. This facilitates inferring the identification of the problem-generating apparatus.

Abstract: In a wafer inspection and sampling system, wafer defects are detected and stored in a data store as defect data. Information is also provided, representative of clusters of defects on the wafer. A statistically based sampling of the defects is made to obtain a set of sampled defects. Subsequent detailed inspection and analysis of the sampled defects produces additional data which facilitate an understanding of process errors.

Abstract: In a wafer inspection and sampling system, wafer defects are detected and stored in a data store as defect data. Information is also provided, representative of clusters of defects on the wafer. A statistically based sampling of the defects is made to obtain a set of sampled defects. Subsequent detailed inspection and analysis of the sampled defects produces additional data which facilitate an understanding of process errors.

Abstract: The present invention improves inspection efficiency in detailed inspections of defects performed based on inspection information from a defect inspection. Particles and defects are detected by a defect inspection device 1. If the cause of the particles and defects are to be determined by performing a detailed inspection with a details inspection device 3 using an SEM or the like, attributes are determined on the particles and defects detected by the defects inspection device 1 before the detailed inspection is performed. The attributes are determined with an attribute inspection device using an optical microscope or the like. Based on these attributes, the defects and particles are separated into those that require detailed inspection and those that do not require detailed inspection or that cannot be inspected in detail. A details inspection device 3 is used to inspect the particles and defects requiring detailed inspection.

Abstract: The invention is a scanning electron microscope including a switching control unit for controlling to switch at least scanning unit to switch a digital image signal of a low magnification based on a wide image taking field of view to and from a digital image signal of a high magnification based on a narrow image taking field of view from an A/D conversion unit and a beam spot diameter control unit for controlling to switch a spot diameter of electron beam on a surface of an object substrate in controlling to switch the signals by the switching control unit and a defect portion analyzing method using the scanning electron microscope.