Abstract: A cell culture container includes: an insert member having a membrane on which a cell is seeded, the insert member defining a first inner space that functions as an anaerobic chamber; a container having an attachment/detachment portion to and from which the insert member is attachable and detachable, the container defining a second inner space that functions as an aerobic chamber; a sealing member that closes an opening of the aerobic chamber between the attachment/detachment portion and the insert member with the insert member being attached to the attachment/detachment portion; and a transfer mechanism that transfers force to the sealing member. The sealing member closes the opening in response to an input of the force from the transfer mechanism.

Abstract: An operation input device accepts non-contact operation on an operation image with a pointer. The operation input device includes a display panel and a sensing portion. The sensing portion outputs a first output value and a second output value. If a first operation image, which is an operation image corresponding to the second output value observed when the first output value is equal to a first reference value, and a second operation image, which is an operation image corresponding to the second output value observed when the first output value is equal to a second reference, differ, the display panel displays the first and second operation images with highlighting.

Abstract: A polishing slurry including a hydrophilic nanocarbon particle having a nitrogen-containing functional group, and a weight ratio of a nitrogen element relative to a carbon element of the hydrophilic nanocarbon particle, the weight ratio expressed as N/C×100% is greater than or equal to about 5 wt %, and a method of manufacturing a semiconductor device using the polishing slurry.

Abstract: An operation input device accepts non-contact operation on an operation image with a pointer. The operation input device includes a display panel and a sensing portion. The sensing portion outputs a first output value and a second output value. If a first operation image, which is an operation image corresponding to the second output value observed when the first output value is equal to a first reference value, and a second operation image, which is an operation image corresponding to the second output value observed when the first output value is equal to a second reference, differ, the display panel displays the first and second operation images with highlighting.

Abstract: A method of manufacturing a metal structure including forming a metal layer including a metal and a nano-abrasive and supplying slurry on the metal layer to perform chemical mechanical polishing, a metal structure including a metal and a nano-abrasive having an average particle diameter of less than about 5 nanometers, and a metal wire, a semiconductor device, and an electronic device including the same.

Abstract: A polishing slurry including a hydrophilic nanocarbon particle having a nitrogen-containing functional group, and a weight ratio of a nitrogen element relative to a carbon element of the hydrophilic nanocarbon particle, the weight ratio expressed as N/C×100% is greater than or equal to about 5 wt %, and a method of manufacturing a semiconductor device using the polishing slurry.

Abstract: A polishing slurry including a hydrophilic nanocarbon particle having a nitrogen-containing functional group, and a weight ratio of a nitrogen element relative to a carbon element of the hydrophilic nanocarbon particle, the weight ratio expressed as N/C×100% is greater than or equal to about 5 wt %, and a method of manufacturing a semiconductor device using the polishing slurry.

Abstract: A plating solution including a metal salt, a hydrophilic fullerene, and water, a metal composite material including a hydrophilic fullerene and a method of manufacturing the same, and a wire, a flexible printed circuit (FPC), and an electronic device including the metal composite material.

Abstract: A plating solution including a metal salt, a hydrophilic fullerene, and water, a metal composite material including a hydrophilic fullerene and a method of manufacturing the same, and a wire, a flexible printed circuit (FPC), and an electronic device including the metal composite material.

Abstract: A polishing slurry including a fullerene derivative and at least one compound having at least one positively-charged functional group, and a method of manufacturing a semiconductor device using the polishing slurry.

Abstract: A polishing slurry including a fullerene derivative including a metal cation, a method of preparing the polishing slurry, and a method of manufacturing a semiconductor device using the polishing slurry.

Abstract: A polishing slurry including a composite including a hydrophilic fullerene and an ionic compound, a method of manufacturing the same, and a method of manufacturing a semiconductor device.

Abstract: A polishing slurry includes a carbon polishing particle and an exothermic material.

Abstract: A carbon abrasive including a carbon nanoparticle and a positively charged polymer, a positively charged oligomer, of a combination thereof, on a surface of the carbon nanoparticle. A polishing slurry including the carbon abrasive, and a method of manufacturing a semiconductor device using the polishing slurry.

Abstract: A chemical mechanical polishing method including preparing a polishing pad including a polishing surface having an elastic modulus at room temperature of about 300 MPa to about 400 MPa, positioning a semiconductor structure having a surface, wherein the surface and the polishing surface of the polishing pad face each other, supplying polishing slurry including nano-abrasive having an average particle diameter of less than about 10 nm between the surface of the semiconductor structure and the polishing surface of the polishing pad, and contacting the surface of the semiconductor structure with the polishing surface of the polishing pad to polish the surface with the polishing slurry. A method of manufacturing a semiconductor device including the the chemical mechanical polishing method, a polishing pad used in the method, and a chemical mechanical polishing device.

Abstract: A chemical mechanical polishing method that includes preparing a chemical mechanical polishing device including a platen, a polishing pad, and a polishing slurry supplier, supplying a hot liquid to an inside of the platen to adjust a surface temperature of the platen, disposing the semiconductor substrate and the polishing pad to face each other, supplying polishing slurry including carbon abrasives having an average particle diameter of less than about 10 nm between the semiconductor substrate and the polishing pad, and contacting the surface of the semiconductor substrate with the polishing pad to polish the semiconductor substrate., a method of manufacturing a semiconductor device using the chemical polishing method, and a chemical mechanical polishing device.

Abstract: A method of manufacturing a metal structure including forming a metal layer including a metal and a nano-abrasive and supplying slurry on the metal layer to perform chemical mechanical polishing, a metal structure including a metal and a nano-abrasive having an average particle diameter of less than about 5 nanometers, and a metal wire, a semiconductor device, and an electronic device including the same.

Abstract: Disclosed is a slurry composition for chemical mechanical polishing (CMP) includes, as polishing particles, a complex compound of both fullerenol and alkylammonium hydroxide. The slurry composition, which exhibits excellent polishing properties, may be prepared at low cost in large quantities. Also disclosed is a method of preparing the slurry composition comprising obtaining a mixture of a fullerenol complex compound and unreacted hydrogen peroxide by reacting alkylammonium hydroxide, hydrogen peroxide, and fullerene, removing the unreacted hydrogen peroxide by adding hydrogen peroxide decomposition catalyst particles to the mixture, separating the hydrogen peroxide decomposition catalyst particles from the mixture by filtration, and adding a polishing additive to the mixture.

Abstract: A polishing slurry including a hydrophilic nanocarbon particle having a nitrogen-containing functional group, and a weight ratio of a nitrogen element relative to a carbon element of the hydrophilic nanocarbon particle, the weight ratio expressed as N/C×100% is greater than or equal to about 5 wt %, and a method of manufacturing a semiconductor device using the polishing slurry.

Abstract: A polishing slurry includes a carbon polishing particle and an exothermic material.