Patents by Inventor Kenji Takase
Kenji Takase has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11561472Abstract: A radiation sensitive composition including a siloxane polymer exhibiting phenoplast crosslinking reactivity as a base resin, which is excellent in resolution and can be used as a radiation sensitive composition capable of allowing a pattern having a desired-shape to be formed with sufficient precision. A radiation sensitive composition including as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof; and a photoacid generator, in which the hydrolyzable silane includes hydrolyzable silanes of Formula (1) R1aR2bSi(R3)4-(a+b)??Formula (1) wherein R1 is an organic group of Formula (1-2) and is bonded to a silicon atom through a Si—C bond or a Si—O bond, and R3 is a hydrolyzable group; and Formula (2) R7cR8dSi(R9)4-(c+d)??Formula (2) wherein R7 is an organic group of Formula (2-1) and is bonded to a silicon atom through a Si—C bond or a Si—O bond, and R9 is a hydrolyzable group.Type: GrantFiled: June 7, 2016Date of Patent: January 24, 2023Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Makoto Nakajima, Kenji Takase, Satoshi Takeda, Wataru Shibayama
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Patent number: 11175583Abstract: The present invention provides a resist underlayer film-forming composition for lithography for forming a resist underlayer film that can be used as a hard mask with use of hydrolysis-condensation product of a hydrolyzable silane which also absorbs KrF laser. A resist underlayer film-forming composition for lithography comprising, as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) [where R1 is an organic group of Formula (2): and is bonded to a silicon atom through a Si—C bond; R3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3], and a ratio of sulfur atoms to silicon atoms is 7% by mole or more in the whole of the silane.Type: GrantFiled: December 4, 2018Date of Patent: November 16, 2021Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Makoto Nakajima, Wataru Shibayama, Satoshi Takeda, Kenji Takase
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Patent number: 11156763Abstract: A lighting device includes a first light source a first light guide plate having a first light entrance surface and a first light outgoing surface and including a first high luminance light outgoing region through which a large amount of light rays exit and a first low luminance light outgoing region through which a small amount of light rays exit, a first reflection member, a second light source, a second light guide plate overlapping the first light guide plate and having a second light entrance surface and a second light outgoing surface and including a second high luminance light outgoing region overlapping the first low luminance light outgoing region and through which a large amount of light rays exit and a second low luminance light outgoing region overlapping the first high luminance light outgoing region and through which a small amount of light rays exit, and a second reflection member.Type: GrantFiled: July 20, 2018Date of Patent: October 26, 2021Assignee: SHARP KABUSHIKI KAISHAInventor: Kenji Takase
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Silicon-containing resist underlayer film-forming composition having halogenated sulfonylalkyl group
Patent number: 11022884Abstract: A resist underlayer film allows an excellent resist pattern shape to be formed when an upper resist layer is exposed to light and developed using an alkaline developing solution or organic solvent; and composition for forming the resist underlayer film. A resist underlayer film-forming composition for lithography, the composition including, as a silane, hydrolyzable silane, hydrolysis product thereof, hydrolysis-condensation product thereof, or combination, wherein the hydrolyzable silane includes hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) [where R1 is an organic group of Formula (2): —R4—R5—R6??Formula (2) (where R4 is optionally substituted C1-10 alkylene group; R5 is a sulfonyl group or sulfonamide group; and R6 is a halogen-containing organic group)]. In Formula (2), R6 may be a fluorine-containing organic group like trifluoromethyl group.Type: GrantFiled: July 9, 2015Date of Patent: June 1, 2021Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Wataru Shibayama, Kenji Takase, Makoto Nakajima, Satoshi Takeda, Hiroyuki Wakayama, Rikimaru Sakamoto -
Patent number: 10983382Abstract: A liquid crystal display device (1) is equipped with a radiator fin (3) and cooling fans (4) on a back surface of the backlight unit (2). The radiator fin (3) includes a plurality of fins (311) arranged vertically along the backlight unit (2). The cooling fans (4), provided in a lower part of the backlight unit (2), are configured to draw air into the liquid crystal display device (1) from a side opposite to the backlight unit (2) and to create an airflow toward the radiator fin (3).Type: GrantFiled: April 4, 2019Date of Patent: April 20, 2021Assignee: SHARP KABUSHIKI KAISHAInventor: Kenji Takase
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Patent number: 10845703Abstract: A film-forming composition having favorable effects such as curability and embeddability and resist underlayer film for use in lithography process for semiconductor devices. The film-forming composition including, as silane, hydrolyzable silane, hydrolysis product thereof, or hydrolysis-condensation product thereof, wherein hydrolyzable silane includes hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) in Formula (1), R1 is organic group of Formula (2) and is bonded to silicon atom through Si—C bond: The film-forming composition, wherein the hydrolyzable silane is combination of hydrolyzable silane of Formula (1) with another hydrolyzable silane, wherein other hydrolyzable silane is at least one selected from group made of hydrolyzable silane of Formula (3): R7cSi(R8)4?c??Formula (3) and hydrolyzable silane of Formula (4): R9dSi(R10)3?d2Ye??Formula (4) Resist underlayer film, obtained by applying the resist underlayer film-forming composition on semiconductor substrate and baking.Type: GrantFiled: November 9, 2015Date of Patent: November 24, 2020Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Makoto Nakajima, Kenji Takase, Masahisa Endo, Hiroyuki Wakayama
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Patent number: 10809619Abstract: A resist underlayer film for use in lithography process which generates less sublimate, has excellent embeddability at the time of applying onto a substrate having a hole pattern, and has high dry etching resistance, wiggling resistance and heat resistance, etc. A resist underlayer film-forming composition including a resin and a crosslinkable compound of Formula (1) or Formula (2): in which Q1 is a single bond or an m1-valent organic group, R1 and R4 are each a C2-10 alkyl group or a C2-10 alkyl group having a C1-10 alkoxy group, R2 and R5 are each a hydrogen atom or a methyl group, R3 and R6 are each a C1-10 alkyl group or a C6-40 aryl group.Type: GrantFiled: June 24, 2014Date of Patent: October 20, 2020Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Keisuke Hashimoto, Kenji Takase, Tetsuya Shinjo, Rikimaru Sakamoto, Takafumi Endo, Hirokazu Nishimaki
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Patent number: 10684546Abstract: A composition for forming a resist underlayer film has excellent storage stability at normal temperature. A composition for forming a resist underlayer film for lithography including a nitrogen-containing compound having 2 to 6 substituents of the following Formula (1) which bond to nitrogen atoms in one molecule, a polymer, a compound that promotes a crosslinking reaction, and an organic solvent. The nitrogen-containing compound having 2 to 6 substituents of Formula (1) in one molecule is for example a glycoluril derivative of the following Formula (1A). In the formula, each R1 is a methyl group or an ethyl group, and R2 and R3 are independently a hydrogen atom, a C1-4 alkyl group, or phenyl group.Type: GrantFiled: April 11, 2017Date of Patent: June 16, 2020Assignee: NISSAN CHEMICAL CORPORATIONInventors: Yasushi Sakaida, Kenji Takase, Takahiro Kishioka, Rikimaru Sakamoto
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Patent number: 10634948Abstract: The present invention provides a lighting device that is excellent in luminance uniformity and light use efficiency and allows for a narrower frame, and a display device including the lighting device. Provided is a lighting device including: a light guide plate; a light source disposed posterior to the light guide plate; a reflection member including a reflective surface facing a light emitting surface of the light source and a light incident surface of the light guide plate, disposed lateral to the light guide plate and the light source, the lighting device further including a reflective polarizing layer on the light incident surface of the light guide plate.Type: GrantFiled: March 6, 2017Date of Patent: April 28, 2020Assignee: SHARP KABUSHIKI KAISHAInventor: Kenji Takase
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Patent number: 10450418Abstract: A polymerizable composition suitable for producing a molded article that can maintain a high refractive index and a low Abbe's number and can be restrained from dimensional changes due to a high-temperature thermal history has (a) 100 parts by mass of a specific reactive silsesquioxane compound, (b) 10 to 500 parts by mass of a specific fluorene compound and (c) 1 to 100 parts by mass of a specific aromatic vinyl compound. A cured product can be obtained by curing the polymerizable composition.Type: GrantFiled: August 12, 2016Date of Patent: October 22, 2019Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Takehiro Nagasawa, Taku Kato, Kentaro Ohmori, Keisuke Shuto, Kenji Takase
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Patent number: 10372040Abstract: A resist underlayer film forming composition for lithography that can be used as a hard mask. The composition can improve pattern resolution due to having a trihalogenoacetamide skeleton. A resist underlayer film forming composition for lithography comprising a hydrolyzable silane, a hydrolysis product thereof, a hydrolysis condensate thereof, or a combination thereof as a silane, wherein the hydrolyzable silane comprises a silane having a halogen-containing carboxylic acid amide group.Type: GrantFiled: December 4, 2015Date of Patent: August 6, 2019Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Wataru Shibayama, Kenji Takase, Rikimaru Sakamoto
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Patent number: 10330855Abstract: A lighting device (100A) includes: at least one light-emitting device (10) that emits light; and a light guide plate (20) having a light-receiving end face (20a) that receives light which is emitted from the at least one light-emitting device (10) and an outgoing face (20b) that crosses the light-receiving end face (20a). The lighting device (100A) further includes a substrate (30) of a rectangular ring shape, the substrate having four side portions (30a, 30b, 30c, 30d). The at least one light-emitting device (10) is provided on the substrate (30).Type: GrantFiled: January 15, 2016Date of Patent: June 25, 2019Assignee: SHARP KABUSHIKI KAISHAInventor: Kenji Takase
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Patent number: 10197917Abstract: The present invention provides a resist underlayer film-forming composition for lithography for forming a resist underlayer film that can be used as a hard mask with use of hydrolysis-condensation product of a hydrolyzable silane which also absorbs KrF laser. A resist underlayer film-forming composition for lithography comprising, as a silane, a hydrolyzable silane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable silane includes a hydrolyzable silane of Formula (1): R1aR2bSi(R3)4?(a+b)??Formula (1) [where R1 is an organic group of Formula (2): and is bonded to a silicon atom through a Si?C bond; R3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3], and a ratio of sulfur atoms to silicon atoms is 7% by mole or more in the whole of the silane.Type: GrantFiled: June 16, 2015Date of Patent: February 5, 2019Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Makoto Nakajima, Wataru Shibayama, Satoshi Takeda, Kenji Takase
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Patent number: 10079146Abstract: A resist underlayer film composition for lithography, including: a silane: at least one among a hydrolyzable organosilane, a hydrolysis product thereof, and a hydrolysis-condensation product thereof, wherein the silane includes a silane having a cyclic organic group containing as atoms making up the ring, a carbon atom, a nitrogen atom, and a hetero atom other than a carbon and nitrogen atoms. The hydrolyzable organosilane may be a hydrolyzable organosilane of Formula (1), wherein, at least one group among R1, R2, and R3 is a group wherein a —Si(X)3 group bonds to C1-10 alkylene group, and other group(s) among R1, R2, and R3 is(are) a hydrogen atom, C1-10 alkyl group, or C6-40 aryl group; a cyclic organic group of 5-10 membered ring containing atoms making up the ring, a carbon atom, at least one of nitrogen, sulfur or oxygen atoms; and X is an alkoxy group, acyloxy group, or halogen atom.Type: GrantFiled: September 13, 2013Date of Patent: September 18, 2018Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Yuta Kanno, Makoto Nakajima, Kenji Takase, Satoshi Takeda, Hiroyuki Wakayama
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Patent number: 10067423Abstract: An additive for a resist underlayer film-forming composition containing a copolymer having structural units of Formulae (1) to (4), and a resist underlayer film-forming composition containing the additive: (where each R1 is independently a hydrogen atom or methyl group, Ar is arylene group, Pr is a protecting group or a hydrogen atom, X is a direct bond or a —C(?O)O—R2— group, R2 constituting the —C(?O)O—R2— group is a C1-3 alkylene group, the alkylene group is bonded to a sulfur atom, R3 is a hydrogen atom, methyl group, methoxy group, or halogeno group, R4 is a C1-3 alkyl group in which at least one hydrogen atom is substituted with a fluoro group, and Z is an organic group having 4 to 7-membered ring lactone skeleton, adamantane skeleton, or norbornane skeleton).Type: GrantFiled: February 25, 2015Date of Patent: September 4, 2018Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Yuto Hashimoto, Yasushi Sakaida, Kenji Takase, Rikimaru Sakamoto
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Patent number: 10048538Abstract: Provided is a display device serving as a see-through display which is capable of ensuring the clarity of a displayed image while maintaining high transparency and is less likely to be limited in terms of the location of installation. A dot-printed light-emitting area of a light guiding plate (60) emits, as backlight, light whose intensity is so high that the intensity of ambient light can be negligible, and therefore, the observer on the front side of a liquid crystal display device (10) is able to see a clear image displayed in an image display area (75) of a liquid crystal panel (20). Moreover, ambient light is transmitted through a light-transmissive area (72) of the light guiding plate (60) to be incident on a transparent display area of the liquid crystal panel (20), and therefore, the observer can see a background displayed with high transparency in the transparent display area (76).Type: GrantFiled: August 10, 2015Date of Patent: August 14, 2018Assignee: SHARP KABUSHIKI KAISHAInventors: Kenta Fukuoka, Kenji Takase
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Patent number: 9857615Abstract: Provided are a light source device and a display device with an assembly constitution that can reduce the size of a frame and make the frame less conspicuous. A light source device is constituted such that a front cabinet having a U-shaped cross-section and a front cover are attached as a unit on an outer peripheral part of a backlight unit, and A display device is constituted such that the front cabinet having a U-shaped cross-section and the front cover are attached as a unit on an outer peripheral part of a liquid-crystal unit, a lens cover is attached by joining joining-groove parts to lens fixing claws provided on the front cabinet and the peripheral edge part of the lens cover is held by a pressing piece on the front cover.Type: GrantFiled: February 26, 2014Date of Patent: January 2, 2018Assignee: SHARP KABUSHIKI KAISHAInventor: Kenji Takase
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Patent number: 9765097Abstract: A method of producing a silane compound having a Formula (1) sulfonyl bond includes reacting a Formula (I) chlorosulfonyl compound with sodium sulfite in water as a solvent in the presence of a base, to produce a Formula (II) sulfinic acid sodium salt: and adding an aromatic hydrocarbon solvent to carry out azeotropic dehydration, and adding an aprotic polar solvent and a Formula (III) chloroalkylsilane compound. (wherein R1, R2, R3, R4, and R5 are each independently a substituent selected from a hydrogen atom, halogen atom, alkyl group, alkoxy group, haloalkyl group, haloalkoxy group, cyano group, and nitro group, R2 and R1 or R3 may form —CH?CH—CH?CH —together, R6 and R7 are each independently a C1-5 alkyl group, L is a single bond or saturated or unsaturated divalent C1-19 hydrocarbon group having a linear, branched, cyclic structure, or a combination thereof, and q is an integer of 1 to 3).Type: GrantFiled: June 17, 2015Date of Patent: September 19, 2017Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventor: Kenji Takase
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Patent number: 9494862Abstract: A resist underlayer film forming composition for lithography, including: as a silane, at least one among a hydrolyzable organosilane, a hydrolysis product thereof, and a hydrolysis-condensation product thereof, wherein the silane includes the silane compound of Formula (1-a) or Formula (1-b): A method for producing a semiconductor device, including: applying the resist underlayer film forming composition onto a semiconductor substrate and baking the composition to form a resist underlayer film; applying a composition for a resist onto the film to form a resist film; exposing the resist film to light; developing the resist film after exposure to obtain a patterned resist film; etching the resist underlayer film according to a pattern of the patterned resist film; and processing the semiconductor substrate according to a pattern of the resist film and the resist underlayer film.Type: GrantFiled: June 19, 2013Date of Patent: November 15, 2016Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Yuta Kanno, Kenji Takase, Makoto Nakajima, Satoshi Takeda, Hiroyuki Wakayama
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Patent number: 9366424Abstract: A light source device includes: a substrate having a front surface on which a light-emitting diode is mounted; and a case having a bottom plate that holds the substrate, wherein a driver circuit for driving the light-emitting diode is mounted on a rear surface of the substrate that is opposite to the front surface thereof, wherein an opening corresponding to a size of the light-emitting diode is formed in the bottom plate of the case, wherein the front surface of the substrate is fixed to a rear surface of the bottom plate of the case from outside of the case with the light-emitting diode fitted in the opening, and wherein a coating material with an emissivity of equal to or higher than 0.9 and equal to or lower than 1.0 is applied to an outer surface of four side walls of the case.Type: GrantFiled: May 1, 2015Date of Patent: June 14, 2016Assignee: SHARP KABUSHIKI KAISHAInventor: Kenji Takase