Abstract: A production method of a semiconductor device including: producing a polishing composition containing zirconium oxide sol; and planarizing a substrate having an uneven surface with said polishing composition, wherein the polishing composition containing zirconium oxide is produced by the steps comprising: baking at a temperature ranging from 400 to 1000° C.

Abstract: When performing an inspection using a charge control function in a SEM wafer inspection apparatus, acceleration voltage, control voltage and deceleration voltage are changed in conjunction so that incident energy determined by “acceleration voltage?deceleration voltage” and bias voltage determined by “deceleration voltage?control voltage” do not change. By this means, charge of a wafer can be controlled, while restraining electrostatic lens effect generated near a control electrode. As a result, an inspection using a charge control function at low incident energy and in a wide viewing field can be performed, and a highly sensitive inspection of semiconductor patterns subject to damages due to electron beam irradiation can be realized. Acceleration voltage, control voltage and deceleration voltage are changed in conjunction so that incident energy determined by “acceleration voltage?deceleration voltage” and bias voltage determined by “deceleration voltage?control voltage” do not change.

Abstract: In a refrigerant circuit (20), an air conditioning unit (12), a cold-storage showcase (13), and a freeze-storage showcase (14) are connected in parallel to an outdoor unit (11). When placing an indoor heat exchanger (71) of the air conditioning unit (12) in the thermo-off state, a degree-of-opening control means (101) provides control so that an indoor expansion valve (72) is placed in the fully closed state. Thereafter, the degree-of-opening control means (101) detects the accumulated amount of refrigerant within the indoor heat exchanger (71) and then adjusts the degree of opening of the indoor expansion valve (72) depending on the refrigerant amount detected.

Abstract: The present invention provides an abrasive compound suitable for polishing the surface of a glass substrate for an optical disk platter or a magnetic disk platter. More specifically, the present invention provides an abrasive compound for a glass hard disk platter, characterized as comprising a stable slurry having water and, dispersed therein as an abrasive, cerium(IV) oxide particles having an average secondary particle size of 0.1 to 0.5 ?m and containing CeO2 in a concentration of 0.2 to 30 wt %. Preferably, the present invention provides the above abrasive compound in which cerium amounts for 95% or more in terms of oxides of the total amount of rare earth elements in the abrasive.

Abstract: The invention solves charge nonuniformity of a specimen surface resulting from emission variation of a carbon nanotube electron source and individual difference of emission characteristics. During charge control processing, charge of the specimen surface is measured in real time. As means for solving charge nonuniformity resulting from nonuniformity of electron illumination density, electrons illuminating the specimen and the specimen are moved relatively to average electron illumination density. Moreover, an absorption current flowing into the specimen and the numbers of secondary electrons emitted from the specimen and of backscattered electrons are measured as means for monitoring charge of the specimen surface in real time.

Abstract: A method of manufacturing display panels includes forming a material layer on a substrate, and baking the material layer formed on substrate which is placed on a supporting bed. The supporting bed is formed of a first supporting bed and a second supporting bed placed on the first supporting bed. A difference in thermal expansion coefficient between the second supporting bed and the substrate is smaller than a difference in thermal expansion coefficient between the first supporting bed and the substrate, and the substrate is placed on the second supporting bed such that the substrate is positioned entirely within the perimeter of the second supporting bed during the baking and heating. This structure allows reduction of scratches on a surface of the substrate.

Abstract: When a guard timer of a compressor (141) expires, an R2 signal from a control section (140) of an outdoor unit is turned on (Action I). If a control section (120) of a freezer unit recognizes from an inside temperature detected by a temperature sensor (124) that the R2 signal is turned on and a request for a shift to a freezer thermo-on state is raised (Action II), a freezer electromagnetic valve (121) is opened (Action III). In general, when the electromagnetic valve (121) is opened, it is supposed that an increase in refrigerant suction pressure is detected by a pressure sensor (146) and then the compressor (141) is actuated. However, if an outside air temperature is low, the refrigerant suction pressure remains lower than a predetermined value. Therefore, the control section (120) actuates a booster compressor (131) (Action IV) to raise the refrigerant suction pressure of the compressor (141).

Abstract: A refrigerant return mechanism (5) is provided for returning liquid refrigerant in a receiver (17) to a circulation path. Whereby, the liquid refrigerant in the receiver (17) is forcedly returned to the circulation path in an operation state where the circulation path is formed in which the refrigerant sent out from compression mechanism (11D, 11E) flows from a second user side unit (20) to first user side units (30, 40) and is then returned to the compression mechanisms (11D, 11E).

Abstract: A production method of a semiconductor device including: producing a polishing composition containing zirconium oxide sol; and planarizing a substrate having an uneven surface with said polishing composition, wherein the polishing composition containing zirconium oxide is produced by the steps comprising: baking at a temperature ranging from 400 to 1000° C.

Abstract: A refrigerant circuit (20) includes a low stage compressor (101, 102, 121, 122), a high stage compressor (41, 42, 43), an outdoor heat exchanger (44) and a utilization side heat exchanger (83, 93). During a defrosting operation of the refrigeration system (10), the high stage compressor (41, 42, 43) is driven. Refrigerant discharged from the high stage compressor (41, 42, 43) is pumped into the utilization side heat exchanger (83, 93) to heat frost on it from its inside. Thereafter, the refrigerant evaporates in the outdoor heat exchanger (44), is then compressed by the high stage compressor (41, 42, 43) and is sent again to the utilization side heat exchanger (83, 93).

Abstract: A method of milling cerium compound by means of a ball mill using a milling medium, characterized in that ratio Hb/r of radius r of a cylindrical ball mill container and depth Hb of the milling medium in the ball mill container disposed horizontally ranges from 1.2 to 1.9, and the ball mill container is rotated at a rotational speed which is 50% or less of critical rotational speed Nc=299/r1/2 of the ball mill container converted from the radius r expressed in centimeter. The milling method can be carried out in a wet or dry process, and the cerium compound is preferably cerium oxide. The method can be also applied for producing a cerium compound slurry.

Abstract: A refrigeration apparatus (1) is provided with a refrigerant circuit (1E) along which are connected a compressor (2), an outdoor heat exchanger (4), an expansion mechanism, an indoor heat exchanger (41) for providing room air conditioning, and a cooling heat exchanger (45, 51) for providing storage compartment cooling. The refrigerant circuit (1E) includes a discharge side three way switch valve (101) for varying the flow rate of a portion of the refrigerant which is discharged out of the compressor (2) and then distributed to the indoor heat exchanger (41) and the outdoor heat exchanger (4) during a heat recovery operation mode in which the indoor heat exchanger (41) and the outdoor heat exchanger (4) operate as condensers. As a result of such arrangement, even when the amount of heat obtained in the cooling heat exchanger (45, 51) exceeds the amount of heat required in the indoor heat exchanger (41), surplus heat is discharged without excessive decrease in the discharge pressure of the compressor (2).

Abstract: In order that an indoor heat exchanger (41), a cold storage heat exchanger (45), and a freeze storage heat exchanger (51) may differ in their refrigerant evaporating temperature, a refrigerant circuit (1E) is provided with a suction side three way switching valve (102) capable of switching of flow paths between the heat exchangers (41, 45, 51) and a compressor (2).

Abstract: [Problems to Be Solved] To provide a method for obtaining a polishing composition by which a polishing speed is high and the polished surface has little surface failure. [Means to Solve the Problems] The present invention relates to a production method of a polishing composition containing zirconia oxide sol including: baking at a temperature ranging from 400 to 1000° C.

Abstract: A charged particle beam apparatus obtains an image by detecting a generation signal inclusively indicative of secondary electrons generated from a specimen. The apparatus has an input unit for inputting current and voltage values to be applied to a charged particle optical system through which the charged particle beam travels, a memory unit for storing shape, position and physical properties of the charged particle optical system and accuracy of the applied current or voltage, an electromagnetic field calculation unit for calculating an electromagnetic field near a path of the charged particle beam, a charged particle trajectory calculation unit for calculating a trajectory of the charged particle beam in the calculated electromagnetic field, a memory unit for storing a result of the trajectory calculation and a controller for controlling the charged particle optical system on the basis of the result of the trajectory calculation.

Abstract: The production method for cerium oxide particles of the present invention is a method of producing a cerium oxide particle by heating a cerium compound from a normal temperature to a temperature range of 400° C. to 1200° C., and comprises at least a temperature raising stage of a temperature rise speed of 2° C./hour to 60° C./hour, or proceeds via a stage of heating while supplying a humidified gas in a temperature raising process. By the method of the present invention, a cerium oxide powder whose particle diameter distribution of primary particles is narrow can be obtained. An aqueous cerium oxide slurry produced from the powder enables an improvement in the productivity and a reduction in the cost of a polishing step, because if it is used as an abrasive a high-quality polished face is obtained without deteriorating the polishing speed. The aqueous cerium oxide slurry of the present invention is particularly useful as an abrasive for final finish of a substrate whose main component is silica.

Abstract: An outside air temperature sensor (231) for detecting the temperature of outside air, and a control means (240) for controlling the operating capacity of a supercool compressor (221) are provided. The control means (240) controls the operation of the supercool compressor (221) based on the state of refrigerant of a refrigerant circuit (20) flowing through a supercool heat exchanger (210) and the temperature of outside air detected by the outside air temperature sensor (231).

Abstract: A subcooling unit (200) includes a refrigerant passage (205) connected to liquid side communication pipes (21, 22) of a refrigerating apparatus (10). When a subcooling compressor (221) is operated, subcooling refrigerant circulates in a subcooling refrigerant circuit (220) to perform a refrigeration cycle, thereby cooling refrigerant of the refrigerating apparatus (10) which flows in the refrigerant passage (205). A controller (240) of the subcooling unit (200) receives the detection value of an outside air temperature sensor (231) or a refrigerant temperature sensor (236). The controller (240) controls the operation of the subcooling compressor (221) with the use of only information obtainable within the subcooling unit (200).

Abstract: An apparatus for inspecting a sample using a scanning electron microscope includes a sample stage, a first electron-optical system to scan an electron beam of a first beam current on the sample, a second electron-optical system to scan an electron beam of a second beam current smaller than the first beam current on the sample, a mechanism to move the sample stage, a detector provided in each of the first and second electron-optical systems to detect a secondary electron. The first electron-optical system is operable in a first mode and the second electron-optical system is operable in a second mode with higher resolution than that of the first mode. In the first mode, the sample is observed while the sample stage is moved continuously, and in the second mode, the sample is observed by detecting a secondary electron using the detector while the sample stage is held stationary.

Abstract: A method of milling cerium compound by means of a ball mill using a milling medium, characterized in that ratio Hb/r of radius r of a cylindrical ball mill container and depth Hb of the milling medium in the ball mill container disposed horizontally ranges from 1.2 to 1.9, and the ball mill container is rotated at a rotational speed which is 50% or less of critical rotational speed Nc=299/r1/2 of the ball mill container converted from the radius r expressed in centimeter. The milling method can be carried out in a wet or dry process, and the cerium compound is preferably cerium oxide. The method can be also applied for producing a cerium compound slurry.