Patents by Inventor Kenji Todori

Kenji Todori has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10236322
    Abstract: A solar cell module according to an embodiment includes: a light transmissive first substrate; a second substrate; at least one cell array disposed between the first substrate and the second substrate, the cell array including a plurality of cells arranged, each of the cells including a first electrode disposed on the first substrate, an organic photoelectric conversion film disposed on the first electrode, and a second electrode disposed on the organic photoelectric conversion film; a plurality of light transmissive partition walls disposed at portions on the first substrate, the portions being located between adjacent ones of the cells and at both end portions of the cell array; and a first resin film disposed between the second substrate and each of the cells between adjacent ones of the partition walls, the cells being connected in series.
    Type: Grant
    Filed: March 11, 2016
    Date of Patent: March 19, 2019
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Atsuko Iida, Takeshi Gotanda, Hideyuki Nakao, Haruhi Oooka, Rumiko Hayase, Shigehiko Mori, Kenji Todori
  • Publication number: 20180211792
    Abstract: The present embodiments provide a flexible, lightweight and highly efficient photoelectric conversion device and further provide a manufacturing method thereof. The photoelectric conversion device according to the embodiment comprises a laminate structure of a substrate, an ITO electrode, a photoelectric conversion layer and a counter electrode. When subjected to surface X-ray diffraction analysis, the ITO electrode shows an X-ray diffraction profile characterized in that the peak at a diffraction peak position in the range of 2?=30.6±0.5° has a half-width of 1.0° or less. The ITO electrode in the device can be formed by forming an amorphous-phase ITO film on the substrate and then by subjecting the film to annealing treatment at a temperature of 200° or less.
    Type: Application
    Filed: August 30, 2017
    Publication date: July 26, 2018
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Shigehiko MORI, Takeshi GOTANDA, Haruhi OOOKA, Kenji TODORI
  • Patent number: 10018908
    Abstract: A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities.
    Type: Grant
    Filed: January 23, 2017
    Date of Patent: July 10, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Naomi Shida, Kenji Todori, Shigehiko Mori, Reiko Yoshimura, Hiroyuki Kashiwagi, Ikuo Yoneda, Tsukasa Tada
  • Publication number: 20180026216
    Abstract: A method of manufacturing a photoelectric conversion device of an embodiment includes: forming a layer on a substrate; and drying this layer. The layer contains a p-type semiconductor, an n-type semiconductor, and a compound represented by the following formula (1). The layer is dried under pressures of 100 Pa or less and substrate temperatures of 40 to 200° C.
    Type: Application
    Filed: August 17, 2017
    Publication date: January 25, 2018
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Haruhi OOOKA, Atsuko llDA, Hideyuki NAKAO, Kenji TODORI, Takeshi GOTANDA
  • Publication number: 20170131630
    Abstract: A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities.
    Type: Application
    Filed: January 23, 2017
    Publication date: May 11, 2017
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Naomi SHIDA, Kenji TODORI, Shigehiko MORI, Reiko YOSHIMURA, Hiroyuki KASHIWAGI, lkuo YONEDA, Tsukasa TADA
  • Patent number: 9588418
    Abstract: A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities.
    Type: Grant
    Filed: December 16, 2014
    Date of Patent: March 7, 2017
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Naomi Shida, Kenji Todori, Shigehiko Mori, Reiko Yoshimura, Hiroyuki Kashiwagi, Ikuo Yoneda, Tsukasa Tada
  • Publication number: 20170062748
    Abstract: A photoelectric conversion device includes: an element substrate having a first electrode, a photoelectric conversion layer, and a second electrode, the photoelectric conversion layer being provided above the first electrode and performing charge separation by energy of irradiated light, and the second electrode being provided above the photoelectric conversion layer; a counter substrate facing the element substrate; and a sealing layer provided between the element substrate and the counter substrate. The element substrate, the counter substrate, and the sealing layer define a sealing region sealing the photoelectric conversion layer. The element substrate further has: an impurity detection layer in contact with the second electrode inside the sealing region and causing chemical reaction with an impurity containing at least one of oxygen and water; and a third electrode in contact with the impurity detection layer and extending to the outside of the sealing region.
    Type: Application
    Filed: September 7, 2016
    Publication date: March 2, 2017
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Hyangmi JUNG, Atsuko llDA, Takeshi GOTANDA, Hideyuki NAKAO, Shigehiko MORI, Kenji TODORI
  • Patent number: 9550322
    Abstract: A near-field exposure mask according to an embodiment includes: a silicon substrate; and a near-field light generating unit that is formed on the silicon substrate, the near-field light generating unit being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials.
    Type: Grant
    Filed: April 10, 2015
    Date of Patent: January 24, 2017
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Naomi Shida, Kenji Todori, Shigehiko Mori, Ko Yamada, Masakazu Yamagiwa, Reiko Yoshimura, Yasuyuki Hotta, Tsukasa Tada, Hiroyuki Kashiwagi, Ikuo Yoneda
  • Publication number: 20160380221
    Abstract: According to one embodiment, a photoelectric conversion element includes a first interconnect, a second interconnect, a photoelectric conversion layer and an insulating layer. The second interconnect is separated from the first interconnect. The photoelectric conversion layer is provided between the first interconnect and the second interconnect. The insulating layer is arranged with the first interconnect. A face formed by the first interconnect and the insulating layer is substantially flat. The face contacts the photoelectric conversion layer.
    Type: Application
    Filed: September 13, 2016
    Publication date: December 29, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Takeshi GOTANDA, Shigehiko Mori, Mitsunaga Saito, Haruhi Cooka, Kenji Todori, Hideyuki Nakao, Satoshi Takayama
  • Publication number: 20160293874
    Abstract: A method of manufacturing a photoelectric conversion device of an embodiment includes: forming a layer on a substrate; and drying this layer. The layer contains a p-type semiconductor, an n-type semiconductor, and a compound represented by the following formula (1). The layer is dried under pressures of 100 Pa or less and substrate temperatures of 40 to 200° C.
    Type: Application
    Filed: March 24, 2016
    Publication date: October 6, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Haruhi OOOKA, Atsuko llDA, Hideyuki NAKAO, Kenji TODORI, Takeshi GOTANDA
  • Publication number: 20160276413
    Abstract: A solar cell module according to an embodiment includes: a light transmissive first substrate; a second substrate; at least one cell array disposed between the first substrate and the second substrate, the cell array including a plurality of cells arranged, each of the cells including a first electrode disposed on the first substrate, an organic photoelectric conversion film disposed on the first electrode, and a second electrode disposed on the organic photoelectric conversion film; a plurality of light transmissive partition walls disposed at portions on the first substrate, the portions being located between adjacent ones of the cells and at both end portions of the cell array; and a first resin film disposed between the second substrate and each of the cells between adjacent ones of the partition walls, the cells being connected in series.
    Type: Application
    Filed: March 11, 2016
    Publication date: September 22, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Atsuko IIDA, Takeshi GOTANDA, Hideyuki NAKAO, Haruhi OOOKA, Rumiko HAYASE, Shigehiko MORI, Kenji TODORI
  • Publication number: 20160268530
    Abstract: The present disclosure provides a photoelectric conversion element having high conversion efficiency. In the photoelectric conversion element, a transparent substrate, a transparent electrode, an electron transfer layer, a photoelectric conversion layer and a back electrode are stacked in this order. The electron transfer layer contains cesium ions and has a minimum thickness of 1 to 16 nm.
    Type: Application
    Filed: March 7, 2016
    Publication date: September 15, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Akihiro MATSUI, Takeshi GOTANDA, Kenji TODORI
  • Publication number: 20160260918
    Abstract: According to one embodiment, a photoelectric conversion element includes a photoelectric conversion layer, a first electrode, and a first layer. The photoelectric conversion layer includes a material having a perovskite structure. The first electrode includes polyethylene dioxythiophene. The first layer is provided between the photoelectric conversion layer and the first electrode. The first layer has hole transport properties. The hygroscopicity of the first layer is lower than a hygroscopicity of the photoelectric conversion layer.
    Type: Application
    Filed: March 2, 2016
    Publication date: September 8, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Takeshi GOTANDA, Kenji TODORI
  • Publication number: 20160141500
    Abstract: An solar cell of an embodiment includes a first electrode, an electron transport layer containing a metal oxide, a self-assembled monolayer, a photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and a second electrode. The self-assembled monolayer includes a fullerene-containing compound having a fullerene portion including a fullerene or a fullerene derivative, an absorption group to the metal oxide, and a bond group bonding the fullerene portion and the absorption group. The bond group contains a bivalent aromatic hydrocarbon group and a bivalent organic group which includes a carbon atom chain having 1 to 18 single-bonded carbon(s) or an atom chain in which a part of the carbon atom chain is substituted by at least one element selected from oxygen, nitrogen, and sulfur, as a main chain.
    Type: Application
    Filed: November 11, 2015
    Publication date: May 19, 2016
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hyangmi JUNG, Takeshi Gotanda, Kenji Todori
  • Patent number: 9229161
    Abstract: According to one embodiment, a waveguide includes: a substrate and a member. The member covers at least a part of the substrate and has a difference in the refractive index from the substrate not less than 2. A plurality of concave parts are provided on the substrate. The concave parts are arrayed on an upper face of the substrate. At least a part of a side face of each of the concave parts includes an arc. An inner diameter of each of the concave parts is not more than 50 nm. Intervals of the neighboring concave parts are not more than the inner diameter. The member fills the concave part.
    Type: Grant
    Filed: December 28, 2012
    Date of Patent: January 5, 2016
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kenji Todori, Yoshiaki Fukuzumi, Hideaki Aochi, Tsukasa Tada, Ko Yamada, Shigehiko Mori, Naomi Shida, Reiko Yoshimura
  • Patent number: 9177989
    Abstract: A solid state imaging device according to an embodiment includes a photo detector arranged two-dimensionally in a semiconductor substrate, a readout circuit provided in the semiconductor substrate, a first photoelectric conversion layer provided above the photo detector, a plurality of first metal dots provided above the first photoelectric conversion layer, a second photoelectric conversion layer provided above the first metal dots, and a plurality of second metal dots provided above the second photoelectric conversion layer.
    Type: Grant
    Filed: March 13, 2013
    Date of Patent: November 3, 2015
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Ikuo Fujiwara, Hideyuki Funaki, Kenji Todori, Akira Fujimoto, Tsutomu Nakanishi, Kenji Nakamura
  • Publication number: 20150246478
    Abstract: A near-field exposure mask according to an embodiment includes: a silicon substrate; and a near-field light generating unit that is formed on the silicon substrate, the near-field light generating unit being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials.
    Type: Application
    Filed: April 10, 2015
    Publication date: September 3, 2015
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Naomi Shida, Kenji Todori, Shigehiko Mori, Ko Yamada, Masakazu Yamagiwa, Reiko Yoshimura, Yasuyuki Hotta, Tsukasa Tada, Hiroyuki Kashiwagi, Ikuo Yoneda
  • Publication number: 20150168825
    Abstract: A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities.
    Type: Application
    Filed: December 16, 2014
    Publication date: June 18, 2015
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Naomi Shida, Kenji Todori, Shigehiko Mori, Reiko Yoshimura, Hiroyuki Kashiwagi, Ikuo Yoneda, Tsukasa Tada
  • Patent number: 9029047
    Abstract: A near-field exposure mask according to an embodiment includes: a silicon substrate; and a near-field light generating unit that is formed on the silicon substrate, the near-field light generating unit being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials.
    Type: Grant
    Filed: March 6, 2012
    Date of Patent: May 12, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Naomi Shida, Kenji Todori, Shigehiko Mori, Ko Yamada, Masakazu Yamagiwa, Reiko Yoshimura, Yasuyuki Hotta, Tsukasa Tada, Hiroyuki Kashiwagi, Ikuo Yoneda
  • Patent number: 8945798
    Abstract: A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities.
    Type: Grant
    Filed: January 31, 2013
    Date of Patent: February 3, 2015
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Naomi Shida, Kenji Todori, Shigehiko Mori, Reiko Yoshimura, Hiroyuki Kashiwagi, Ikuo Yoneda, Tsukasa Tada