Abstract: In a semiconductor device manufacturing process using a low-dielectric-constant insulation film as an interlayer insulation film, a stress exerted on wiring layers and interlayer insulation films is reduced. In a semiconductor device in which a plurality of buried wiring layers are formed in the interlayer insulation films each formed of a low-dielectric-constant insulation film lower in mechanical strength than a silicone oxide film formed by, for example, a CVD method, a first layer of wiring, on a lower layer of which a low-dielectric-constant insulation film is not disposed, serves as a bonding pad, and bump electrodes are formed on the wiring so as to become higher than a position where the uppermost buried wiring is formed.

Abstract: When a conventional semiconductor container opening/closing apparatus opens a lid of a semiconductor container, foreign particles enter into the container from outside through a gap between the container and a wall surface of the container opening/closing apparatus and adhere to a wafer in the container. A method is provided to reduce the number of foreign particles adhering to the wafer by preventing foreign particles from entering into the container at the time of opening the container by the opening/closing apparatus. To achieve this, a velocity-differential pressure ratio obtained by dividing the maximum velocity at the time of opening the lid of the container in a vertical direction to an opening of the container, by the differential pressure between the inside pressure and the outside pressure of said semiconductor manufacturing apparatus, is set to be 0.06 ((m/s) Pa) or less.

Abstract: A FOUP having semiconductor wafers received therein is transferred to a loading port and then the door of the FOUP is fixed and removed by a FIMS door and then the semiconductor wafers are taken out of the shell of the FOUP and then a predetermined manufacturing processing is performed to the semiconductor wafers. After performing the manufacturing processing, the semiconductor wafers are returned into the shell and the FIMS door is returned to a closed position and the shell is retracted about 50 mm to 65 mm to form a gap between the FIMS door and the shell. Then, purge gas is introduced from a gas introduction pipe arranged above the loading port on the left and right sides in a slanting forward direction of the FIMS door into the shell to replace the atmosphere in the shell with the purge gas.

Abstract: In a semiconductor device manufacturing process using a low-dielectric-constant insulation film as an interlayer insulation film, a stress exerted on wiring layers and interlayer insulation films is reduced. In a semiconductor device in which a plurality of buried wiring layers are formed in the interlayer insulation films each formed of a low- dielectric-constant insulation film lower in mechanical strength than a silicone oxide film formed by, for example, a CVD method, a first layer of wiring, on a lower layer of which a low-dielectric-constant insulation film is not disposed, serves as a bonding pad, and bump electrodes are formed on the wiring so as to become higher than a position where the uppermost buried wiring is formed.

Abstract: Atmosphere inside a wafer carrier is purged through an open face of the wafer carrier, in the state where a carrier door constituting a face of the wafer carrier is opened by a load port door. Purging is carried out by partitioning a mini-environment with an upper wall surface, a lower wall surface, and an EFEM door into a predetermined space adjacent to the open face, by discharging gas from the predetermined space through an exhaust opening, and by supplying an inert gas or a dry air from a gas supply port into the predetermined space.

Abstract: A FOUP having semiconductor wafers received therein is transferred to a loading port and then the door of the FOUP is fixed and removed by a FIMS door and then the semiconductor wafers are taken out of the shell of the FOUP and then a predetermined manufacturing processing is performed to the semiconductor wafers. After performing the manufacturing processing, the semiconductor wafers are returned into the shell and the FIMS door is returned to a closed position and the shell is retracted about 50 mm to 65 mm to form a gap between the FIMS door and the shell. Then, purge gas is introduced from a gas introduction pipe arranged above the loading port on the left and right sides in a slanting forward direction of the FIMS door into the shell to replace the atmosphere in the shell with the purge gas.

Abstract: A waste-to-energy incineration system, in which the amount and heat value of exhaust gas largely changes in long and short periods, comprises an incinerator for burning waste, a boiler in the incinerator for generating steam with exhaust heat generated by the incinerator, a superheater for superheating steam generated in the boiler, a steam turbine driven by steam superheated by the superheater, a generator driven by the steam turbine, a fuel reformer for reforming source fuel, and a combustor burning fuel gas reformed by the fuel reformer and at least a part of exhaust gas led from the incinerator which is able to stably decompose generated dioxin in waste incineration exhaust gas.

Abstract: A cylinder of the invention can precisely send out a piston rod 3 into four different positions and comprises: a spring receiving member 14 placed coaxially with piston rod 3 in a piston room (I-II) of a cylinder tube 2 so that the movement of spring receiving member 14 is limited by one end of the piston room; a first spring member 15 to separate the spring receiving member from the piston; a stopper 8 formed on piston rod 3 to limit spring receiving member 14 from moving in the opposite direction to piston 4, a hollow 9 formed on the periphery of piston rod 3 at farther position from piston 4 than stopper 8; and a stop pin 11 installed in the cylinder tube to be pressed in the direction of hollow 9 by a second spring member 12 to engage with hollow 9, wherein the movable length of piston rod 9 while stop pin 11 is engaged with hollow 9 is larger than movable distance of spring receiving member 14 from the piston. A load port and a production system of this invention are constructed using the cylinder.

Abstract: Atmosphere inside a wafer carrier is purged through an open face of the wafer carrier, in the state where a carrier door constituting a face of the wafer carrier is opened by a load port door. Purging is carried out by partitioning a mini-environment with an upper wall surface, a lower wall surface, and an EFEM door into a predetermined space adjacent to the open face, by discharging gas from the predetermined space through an exhaust opening, and by supplying an inert gas or a dry air from a gas supply port into the predetermined space.

Abstract: When atmosphere inside a wafer carrier is replaced by introducing a gas into the wafer carrier from a gas inlet provided to the wafer carrier that can accommodate wafers. At the same time, the atmosphere inside the wafer carrier is sucked to make an inside pressure negative relative to an outside pressure.

Abstract: A substrate processing apparatus for providing predetermined processing to wafers brought in through the load port door comprises in the front of the load port door a load port table on which a wafer carrier accommodating a plurality of wafers is placed, and a shield plate is provided so as to surround the load port table.

Abstract: In a load port mechanism of a substrate treatment unit, protuberances are provided on a sealing surface formed along a door with which a wafer carrier is to dock, or on a sealing surface formed around the door of the wafer carrier. The wafer carrier door is faced with the load port door with the protuberances therebetween, thereby separating the sealing surface of the substrate treatment unit from the sealing surface of the wafer carrier by only a predetermined distance. Thus, there is formed a channel along which clean air flows from the inside of the substrate treatment unit to the outside thereof. The load port structure and the wafer carrier structure improve the reliability of opening/closing action of the wafer carrier and prevent entry of extraneous particles into the treatment unit with sufficient reliability, and enable high-yield production of integrated circuits.

Abstract: A waste-to-energy incineration system, in which the amount and the heat value of exhaust gas largely changes in long and a short periods, comprises an incinerator for burning waste, a boiler in the incinerator for generating steam with exhaust heat generated by the incinerator, a superheater for superheating steam generated in the boiler, a steam turbine driven by steam superheated by the superheater, a generator driven by the steam turbine, a fuel reformer for reforming source fuel, and a combustor burning fuel gas reformed by the fuel reformer and at least a part of exhaust gas led from the incinerator which is able to stably decompose generated dioxin in waste incineration exhaust gas.

Abstract: The object of the invention provides a cylinder and a load port, which make it possible for FOUP whose latchkey receptacles are not at the 90-degree position to smoothly engage with the latchkeys into the receptacles without causing the damage of receptacles when the stage moves forwards to open FOUP. Another object of this invention is to provide a production system, which enables the mass-production of semiconductor with higher reliability.

Abstract: A waste-to-energy incineration system, in which the amount and the heat value of exhaust gas largely changes in a long and a short periods, comprises an incinerator for burning waste, a boiler in the incinerator for generating steam with exhaust heat generated by the incinerator, a superheater for superheating steam generated in the boiler, a steam turbine driven by steam superheated by the superheater, a generator driven by the steam turbine, a fuel reformer for reforming source fuel, and a combustor burning fuel gas reformed by the fuel reformer and at least a part of exhaust gas led from the incinerator which are able to stably decompose generated dioxin, whereby it becomes possible to stably and almost completely decompose dioxin in waste incineration exhaust gas.

Abstract: A waste-to-energy incineration system, in which the amount and the heat value of exhaust gas largely changes in a long and a short periods, comprises an incinerator for burning waste, a boiler in the incinerator for generating steam with exhaust heat generated by the incinerator, a superheater for superheating steam generated in the boiler, a steam turbine driven by steam superheated by the superheater, a generator driven by the steam turbine, a fuel reformer for reforming source fuel, and a combustor burning fuel gas reformed by the fuel reformer and at least a part of exhaust gas led from the incinerator which are able to stably decompose generated dioxin, whereby it becomes possible to stably and almost completely decompose dioxin in waste incineration exhaust gas.

Abstract: A waste-to-energy incineration system, in which the amount and heat value of exhaust gas largely changes in long and short periods, comprises an incinerator for burning waste, a boiler in the incinerator for generating steam with exhaust heat generated by the incinerator, a superheater for superheating steam generated in the boiler, a steam turbine driven by steam superheated by the superheater, a generator driven by the steam turbine, a fuel reformer for reforming source fuel, and a combustor burning fuel gas reformed by the fuel reformer and at least a part of exhaust gas led from the incinerator which is able to stably decompose generated dioxin in waste incineration exhaust gas.

Abstract: A waste-to-energy incineration system, in which the amount and the heat value of exhaust gas changes during operation, includes an incinerator for burning waste, a boiler in the incinerator for generating steam with exhaust heat generated by the incinerator, and a superheater for superheating steam generated in the boiler. A steam turbine is provided which is driven by steam superheated by the superheater and a generator is driven by the steam turbine. A fuel reformer is provided for reforming source fuel. A combustor burning fuel gas reformed by the fuel reformer and at least a part of exhaust gas fed from the incinerator is provided which decomposes generated dioxin in waste incineration exhaust gas.

Abstract: An apparatus for heat recovery from an exhaust gas with waste heat from a heat machinery unit, which comprises a pair of first and second chemical heat-storing units, each comprising a vessel containing a reactant material capable of releasing a reaction-susceptible material upon heating with an exhaust gas and emitting the heat of reaction upon combination with the reaction-susceptible material and a heat exchanger piping provided in the vessel and through which a heat transfer medium is passed. The high temperature gas from the heat machinery unit is applied to the vessel in one of the first and second chemical heat-storing units, thereby resulting in a reaction for leasing the reaction-susceptible material.

Abstract: A method of and an apparatus for molding a belt for transmitting power, comprise mounting a cylindrical unvulcanized rubber sheet on a mandrel, selecting a necessary mandrel of a plurality of mandrels on which unvulcanized rubber sheets are mounted, moving the mandrel to a cord layer forming unit, winding a cord on the cylindrical unvulcanized rubber sheet mounted on the mandrel, moving the cord wound mandrel to a laminated body forming and cutting unit, winding an unvulcanized rubber sheet on the cord wound mandrel to form a laminated body, cutting the laminated body, moving the cut laminated body to an unvulcanized rubber sheet mounting unit, and taking out the belt.