Abstract: An ultrasonic tester includes an ultrasonic sensor that applies ultrasound to a test object; a casing that holds the ultrasonic sensor immersed in a contact medium that allows the ultrasound to propagate therethrough, the casing including a test object-facing opening Further, there is circuitry configured to, when the test object-facing opening of the casing is passing an opening of the test object in a test direction of the test object, control a moving speed of the casing such that a region of contact between the test object and the contact medium entering the opening of the test object is kept within the opening of the test object.

Abstract: An epitaxial substrate includes: a single crystal substrate including projections arranged in an array on a plane. Each projection has a conical or pyramidal shape tapered in a normal direction to the plane. The AlN layer includes: a first AlN crystal covering the plane and the projections with tips of the projections being exposed; second AlN crystals protruding from the tips of the projections along the normal direction and each having a shape of a column whose cross-sectional area increases as a distance from a tip of a corresponding projection increases; and a third AlN crystal as a layer interconnecting ends of the second AlN crystals, opposite the single crystal substrate.

Abstract: An epitaxial substrate includes: a single crystal substrate including projections arranged in an array on a plane. Each projection has a conical or pyramidal shape tapered in a normal direction to the plane. The AlN layer includes: a first AlN crystal covering the plane and the projections with tips of the projections being exposed; second AlN crystals protruding from the tips of the projections along the normal direction and each having a shape of a column whose cross-sectional area increases as a distance from a tip of a corresponding projection increases; and a third AlN crystal as a layer interconnecting ends of the second AlN crystals, opposite the single crystal substrate.

Abstract: An ultraviolet light emitting element includes a light emitting layer, a cap layer, an electron barrier layer. The light emitting layer has a multi-quantum well structure including barrier layers each including a first AlGaN layer and well layers each including a second AlGaN layer. The electron barrier layer includes at least one first p-type AlGaN layer and at least one second p-type AlGaN layer. The cap layer is located between the first p-type AlGaN layer and one of the well layers closest to the first p-type AlGaN layer. The cap layer is a third AlGaN layer having an Al composition ratio greater than an Al composition ratio of each of the well layers and less than an Al composition ratio of the first p-type AlGaN layer. The cap layer has a thickness of greater than or equal to 1 nm and less than or equal to 7 nm.

Abstract: The semiconductor device includes: an AlGaN layer; a contact electrode; an insulating film; and a passivation film. The semiconductor device further includes: an extended wire extending over the contact electrode and the insulating film; and a pad electrode electrically connected to the extended wire. The passivation film covers the insulating film and the extended wire and including an opening for exposing the pad electrode. The insulating film accommodates the opening in a plan view. The passivation film accommodates the contact electrode in a plan view. The semiconductor device further includes a heat dissipation layer on a surface of the passivation film.

Abstract: An ultraviolet light emitting element includes a light emitting layer, a cap layer, an electron barrier layer. The light emitting layer has a multi-quantum well structure including barrier layers each including a first AlGaN layer and well layers each including a second AlGaN layer. The electron barrier layer includes at least one first p-type AlGaN layer and at least one second p-type AlGaN layer. The cap layer is located between the first p-type AlGaN layer and one of the well layers closest to the first p-type AlGaN layer. The cap layer is a third AlGaN layer having an Al composition ratio greater than an Al composition ratio of each of the well layers and less than an Al composition ratio of the first p-type AlGaN layer. The cap layer has a thickness of greater than or equal to 1 nm and less than or equal to 7 nm.

Abstract: A determination assist system including a first image generating section for generating a first planar image based on data of a first test index; a second image generating section for generating a second planar image based on data of a second test index; a differentiation section which differentiates the first planar image and the second planar image to generate a first differential image and a second differential image, respectively; a binarization section which binarizes the first differential image to generate a first binary image including a first region which is not less than a first threshold and a second region which is less than the first threshold, and binarizes the second differential image to generate a second binary image including a third region which is not less than a second threshold and a fourth region which is less than the second threshold; and a determination image generating section.

Abstract: In a method of manufacture for a nitride semiconductor light emitting element including: a monocrystalline substrate; and an AlN layer; and a first nitride semiconductor layer of a first electrical conductivity type; and a light emitting layer made of an AlGaN-based material; and a second nitride semiconductor layer of a second electrical conductivity type, a step of forming the AlN layer includes: a first step of supplying an Al source gas and a N source gas into the reactor to generate a group of AlN crystal nuclei having Al-polarity to be a part of the AlN layer on the surface of the monocrystalline substrate; and a second step of supplying the Al source gas and the N source gas into the reactor to form the AlN layer, after the first step.

Abstract: The epitaxial wafer includes a silicon substrate, an aluminum nitride thin film feeing a main surface of the silicon substrate, and an aluminum deposit between the silicon substrate and the aluminum nitride thin film so as to inhibit formation of silicon nitride. In the method for producing the epitaxial wafer, to form the aluminum deposit on the main surface of the silicon substrate, trimethyl aluminum is supplied into a reactor after a substrate temperature defined as a temperature of the silicon substrate is adjusted to a first predetermined temperature equal to or mare than. 300° C. and less than 1200° C. Thereafter, to form the aluminum nitride thin film facing the main surface of the silicon substrate, trimethyl aluminum and ammonia are supplied into the reactor after the substrate temperature is adjusted to a second predetermined temperature equal to or more than 1200° C. and equal to or less than 1400° C.

Abstract: An ultraviolet semiconductor light-emitting element comprises a light-emitting layer which is arranged between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, an n-electrode that is in contact with the n-type nitride semiconductor layer, and a p-electrode that is in contact with the p-type nitride semiconductor layer. The p-type nitride semiconductor layer is provided with a p-type contact layer that has a band gap smaller than that of the light-emitting layer and is in ohmic contact with the p-electrode. A depressed part is formed in a reverse side surface of a surface of the p-type nitride semiconductor layer that faces the light-emitting layer so as to avoid a formation region on which the p-electrode is formed. A reflective film that reflects ultraviolet light emitted from the light-emitting layer is formed on an inner bottom surface of the depressed part.

Abstract: The nitride semiconductor light-emitting element of the invention has a stacked structure of a buffer layer, an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer, on one surface side of a single crystal substrate of a sapphire substrate. A nitride semiconductor multilayer structure as the buffer layer includes: a plurality of island-like nuclei formed of AlN and formed on the one surface of the single crystal substrate; a first nitride semiconductor layer formed of an AlN layer and formed on the one surface side of the single crystal substrate so as to fill gaps between adjacent nuclei and to cover all the nuclei; and a second nitride semiconductor layer formed of an AlN layer and formed on the first nitride semiconductor layer. The nitride semiconductor multilayer structure is characterized in that the density of the nuclei is less than 6×109 nuclei cm?2.

Abstract: A determination assist system including a first image generating section for generating a first planar image based on data of a first test index; a second image generating section for generating a second planar image based on data of a second test index; a differentiation section which differentiates the first planar image and the second planar image to generate a first differential image and a second differential image, respectively; a binarization section which binarizes the first differential image to generate a first binary image including a first region which is not less than a first threshold and a second region, which is less than the first threshold, and binarizes the second differential image to generate a second binary image including a third region which is not less than a second threshold and a fourth region which is less than the second threshold; and a determination image generating section.

Abstract: A determination assist system including a first image generating section for generating a first planar image based on data of a first test index; a second image generating section for generating a second planar image based on data of a second test index; a differentiation section which differentiates the first planar image and the second planar image to generate a first differential image and a second differential image, respectively; a binarization section which binarizes the first differential image to generate a first binary image including a first region which is not less than a first threshold and a second region which is less than the first threshold, and binarizes the second differential image to generate a second binary image including a third region which is not less than a second threshold and a fourth region which is less than the second threshold; and a determination image generating section.

Abstract: In a method of manufacture for a nitride semiconductor light emitting element including: a monocrystalline substrate; and an AlN layer; and a first nitride semiconductor layer of a first electrical conductivity type; and a light emitting layer made of an AlGaN-based material; and a second nitride semiconductor layer of a second electrical conductivity type, a step of forming the AlN layer includes: a first step of supplying an Al source gas and a N source gas into the reactor to generate a group of MN crystal nuclei having Al-polarity to be a part of the AlN layer on the surface of the monocrystalline substrate; and a second step of supplying the Al source gas and the N source gas into the reactor to form the AlN layer, after the first step.

Abstract: The electronic device includes a substrate, a first electrode formed over a surface of the substrate, a second electrode located on an opposite side of the first electrode from the substrate so as to face the first electrode, and a functional layer interposed between the first electrode and second electrode and formed by means of anodizing a first polycrystalline semiconductor layer in an electrolysis solution so as to contain a plurality of semiconductor nanocrystals. The electronic device further includes a second polycrystalline semiconductor layer interposed between the first electrode and the functional layer so as to be in close contact with the functional layer. The second polycrystalline semiconductor layer has an anodic oxidization rate in the electrolysis solution lower than that of the first polycrystalline semiconductor layer so as to function as a stop layer for exclusively anodizing the first polycrystalline semiconductor layer.

Abstract: The nitride semi-conductive light emitting layer in this invention comprises a single crystal substrate 1 for epitaxial growth, a first buffer layer 2, an n-type nitride semi-conductive layer 3, a second buffer layer 4, a third buffer layer 5, a light emitting layer 6, and a p-type nitride semi-conductive layer 7. The first buffer layer 2 is laminated to a top side of the single crystal substrate 1. The n-type nitride semi-conductive layer 3 is laminated to a top side of the first buffer layer 2. The third buffer layer 5 is laminated to a top side of the n-type nitride semi-conductive layer 3 with the second buffer layer 4 being interposed therebetween. The light emitting layer 6 is laminated to a top side of the third buffer layer 5. The p-type nitride semi-conductive layer 7 is laminated to a top side of the light emitting layer 6.

Abstract: An ultraviolet semiconductor light-emitting element comprises a light-emitting layer which is arranged between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, an n-electrode that is in contact with the n-type nitride semiconductor layer, and a p-electrode that is in contact with the p-type nitride semiconductor layer. The p-type nitride semiconductor layer is provided with a p-type contact layer that has a band gap smaller than that of the light-emitting layer and is in ohmic contact with the p-electrode. A depressed part is formed in a reverse side surface of a surface of the p-type nitride semiconductor layer that faces the light-emitting layer so as to avoid a formation region on which the p-electrode is formed. A reflective film that reflects ultraviolet light emitted from the light-emitting layer is formed on an inner bottom surface of the depressed part.

Abstract: The electronic device includes a substrate, a first electrode formed over a surface of the substrate, a second electrode located on an opposite side of the first electrode from the substrate so as to face the first electrode, and a functional layer interposed between the first electrode and second electrode and formed by means of anodizing a first polycrystalline semiconductor layer in an electrolysis solution so as to contain a plurality of semiconductor nanocrystals. The electronic device further includes a second polycrystalline semiconductor layer interposed between the first electrode and the functional layer so as to be in close contact with the functional layer. The second polycrystalline semiconductor layer has an anodic oxidization rate in the electrolysis solution lower than that of the first polycrystalline semiconductor layer so as to function as a stop layer for exclusively anodizing the first polycrystalline semiconductor layer.

Abstract: A determination assist system including a first image generating section for generating a first planar image based on data of a first test index; a second image generating section for generating a second planar image based on data of a second test index; a differentiation section which differentiates the first planar image and the second planar image to generate a first differential image and a second differential image, respectively; a binarization section which binarizes the first differential image to generate a first binary image including a first region which is not less than a first threshold and a second region which is less than the first threshold, and binarizes the second differential image to generate a second binary image including a third region which is not less than a second threshold and a fourth region which is less than the second threshold; and a determination image generating section.

Abstract: The nitride semiconductor light-emitting element of the invention has a stacked structure of a buffer layer, an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer, on one surface side of a single crystal substrate of a sapphire substrate. A nitride semiconductor multilayer structure as the buffer layer includes: a plurality of island-like nuclei formed of AlN and formed on the one surface of the single crystal substrate; a first nitride semiconductor layer formed of an AlN layer and formed on the one surface side of the single crystal substrate so as to fill gaps between adjacent nuclei and to cover all the nuclei; and a second nitride semiconductor layer formed of an AlN layer and formed on the first nitride semiconductor layer.