Abstract: In a process of fabricating a nitride nitride semi-conductor layer of AlaGabIn(1-a-b)N(0<a<1, 0<b<1, 1?a?b>0), the AlGaInN layer is grown at a growth rate less than 0.09 ?m/h according to the metal organic vapor phase epitaxy (MOPVE) method. The AlGaInN layer fabricated by the process in the present invention exhibits a high quality with low defect, and increases internal quantum yield.

Abstract: A nitride semi-conductor light emitting device has a p-type nitride semi-conductor layer 7, an n-type nitride semi-conductor layer 3, and a light emission layer 6 which is interposed between the p-type nitride semi-conductor layer 7 and the n-type nitride semi-conductor layer 3. The light emission layer 6 has a quantum well structure with a barrier layer 6b and a well layer 6a. The barrier layer 6b is formed of AlaGabIn(1-a-b)N (0<a<1, 0<b<1, 1?a?b>0), and contains a first impurity at a concentration of A greater than zero. The well layer 6a is formed of AlcGadIn(1-c-d)N (0<c<1, c<a, 0<d<1, 1?c?d>0), and contains a second impurity at a concentration of B equal to or greater than zero. In the nitride semi-conductor light emitting device of the present invention, the concentration of A is larger than that of B, in order that the barrier layer 6b has a concentration of oxygen smaller than that in the well layer 6a.

Abstract: The nitride semi-conductive light emitting layer in this invention comprises a single crystal substrate 1 for epitaxial growth, a first buffer layer 2, an n-type nitride semi-conductive layer 3, a second buffer layer 4, a third buffer layer 5, a light emitting layer 6, and a p-type nitride semi-conductive layer 7. The first buffer layer 2 is laminated to a top side of the single crystal substrate 1. The n-type nitride semi-conductive layer 3 is laminated to a top side of the first buffer layer 2. The third buffer layer 5 is laminated to a top side of the n-type nitride semi-conductive layer 3 with the second buffer layer 4 being interposed therebetween. The light emitting layer 6 is laminated to a top side of the third buffer layer 5. The p-type nitride semi-conductive layer 7 is laminated to a top side of the light emitting layer 6.

Abstract: In a process of fabricating a nitride nitride semi-conductor layer of AlaGabIn(1-a-b)N (0<a<1, 0<b<1, 1?a?b>0), the AlGaInN layer is grown at a growth rate less than 0.09 ?m/h according to the metal organic vapor phase epitaxy (MOPVE) method. The AlGaInN layer fabricated by the process in the present invention exhibits a high quality with low defect, and increases internal quantum yield.

Abstract: A nitride semi-conductor light emitting device has a p-type nitride semi-conductor layer 7, an n-type nitride semi-conductor layer 3, and a light emission layer 6 which is interposed between the p-type nitride semi-conductor layer 7 and the n-type nitride semi-conductor layer 3. The light emission layer 6 has a quantum well structure with a barrier layer 6b and a well layer 6a. The barrier layer 6b is formed of AlaGabIn(1-a-b)N (0<a<1, 0<b<1, 1?a?b>0), and contains a first impurity at a concentration of A greater than zero. The well layer 6a is formed of AlcGadIn(1-c-d)N (0<c<1, c<a, 0<d<1, 1?c?d>0), and contains a second impurity at a concentration of B equal to or greater than zero. In the nitride semi-conductor light emitting device of the present invention, the concentration of A is larger than that of B, in order that the barrier layer 6b has a concentration of oxygen smaller than that in the well layer 6a.

Abstract: A thermally induced sound wave generating device comprising a thermally conductive substrate, a head insulation layer formed on one surface of the substrate, and a heating element thin film formed on the heat insulation layer and in the form of an electrically driven metal film, and wherein when the heat conductivity of the thermally conductive substrate is set as ?s and its heat capacity is set as Cs, and the thermal conductivity of the beat insulation layer is set as ?I and its heat capacity is set as CI, relation of 1/100??ICI/?SCS and ?SCS?100×106 is realized. This is a new technical means capable of greatly improving the function of a pressure generating device based on thermal induction.

Abstract: There is provided a substrate for a light emitting device which includes an electrically conductive and transparent film which is in contact with a surface of a low refractive index member of which refractive index is greater than 1 and not greater than 1.30. In a preferable embodiment, the substrate further comprises a transparent member on its surface which is opposed to its surface which has the electrically conductive and transparent film. There is further provided a light emitting device which includes such substrate and a luminous layer, and the luminous layer is located on the electrically conductive and transparent film. With such light emitting device, a ratio of light which is withdrawn outside through the low refractive index member is increased, so that a coupling-out efficiency for surface emission of light withdrawn into the ambient air is increased.

Abstract: An aerogel substrate useful for an electrically conductive substrate, a heat insulating substrate, an optical waveguide substrate, a substrate for a light emitting device or a light emitting device is provided. The aerogel substrate is characterized by comprising a functional layer and an aerogel layer, and an intermediate layer formed between the functional layer and the aerogel layer to allow the functional layer to be formed uniformly thereon. The intermediate layer is formed on at least one surface of the aerogel layer by a gas phase method, by the Langmuir-Blodgett method or by adsorption of an inorganic layered compound; or formed by a hydrophilicizing treatment of at least one surface of the aerogel layer followed by coating and drying an aqueous coating fluid, by an annealing treatment of at least one surface of the aerogel layer, or by a hydrophilicizing treatment of at least one surface of the aerogel layer.

Abstract: A vacuum vapor deposition apparatus includes a vacuum chamber having a plurality of vapor sources and a heater for heating the vapor sources to achieve vacuum vapor deposition on a surface of at least one substrate within the vacuum chamber. At least one of the vapor sources utilizes an organic material. A hot wall, which encloses the vapor sources and a space in which the vapor sources and the substrate confront each other, is heated to a temperature at which the organic material is neither deposited nor decomposed. The organic material is vapor deposited on the surface of the substrate by heating the vapor sources while the vapor sources and the substrate are moved relative to each other.

Abstract: A vacuum vapor deposition apparatus includes a vacuum chamber having a plurality of vapor sources and a heater for heating the vapor sources to achieve vacuum vapor deposition on a surface of at least one substrate within the vacuum chamber. At least one of the vapor sources utilizes an organic material. A hot wall, which encloses the vapor sources and a space in which the vapor sources and the substrate confront each other, is heated to a temperature at which the organic material is neither deposited nor decomposed. The organic material is vapor deposited on the surface of the substrate by heating the vapor sources while the vapor sources and the substrate are moved relative to each other.

Abstract: There is provided a process for producing an aerogel which comprises lowering a pH of a water glass solution to obtain a sol, gelling the sol to obtain a hydrogel, replacing water in the gel with an organic solvent, reacting the gel with a hydrophobilizing agent having hydrophobic groups as well as functional groups reactive with silanol groups in liquid phase, followed by supercritically drying; or hydrophobilizing and supercritically drying the resultant gel at the same time. Preferably, the hydrogel is prepared by ion exchanging alkali metals in the water glass solution using an ion exchange resin to obtain a sol which is subjected to suspension polymerization.

Abstract: A side-face illuminating optical fiber comprising a core 1 transmitting therethrough light entering from an incident end of the optical fiber, a cladding 2 made of silica aerogel which covers an outer peripheral surface of the core, a transparent coating layer 3 which covers an outer periphery of the cladding, and an illuminating portion formed at least in a part of an interface between the core and the cladding. The light transmitting though said core radiates through the illuminating portion to the cladding.

Abstract: An optical fiber comprises a core 1 extending in a longitudinal direction and a cladding 3 of silica aerogel preferably having a hydrophobic property to provide a high optical transmission efficiency. The silica aerogel of the cladding is prepared by polymerizing a hydrolyzed alkoxysilane before a supercritical drying treatment and is subjected to a hydrophobic treatment before or during the supercritical drying.

Abstract: To improve the detection precision and detection efficiency and further to automatize the detection process, moisture in a honeycomb panel is detected as follows: the honeycomb panel is heated by a lamp; the surface temperature of the heated construction is measured by an infrared radiation thermometer; the measured temperature is displayed to roughly discriminate an abnormal portion (i.e., a portion containing moisture); the honeycomb panel is further heated continuously to detect temperature-change-rates at both abnormal and normal portions (i.e., a portion not containing moisture); and the two temperature-change-rates are compared with each other to discriminate a presence of moisture.