Abstract: A fixing device includes: a first rotatable member; a second rotatable member disposed in contact with the first rotatable member; a pressing member that is disposed on an inner circumferential surface of the second rotatable member and presses the inner circumferential surface of the second rotatable member such that the second rotatable member is pressed against the first rotatable member; a sliding member interposed between the inner circumferential surface of the second rotatable member and the pressing member; and a lubricant interposed between the inner circumferential surface of the second rotatable member and the sliding member. The inner circumferential surface of the second rotatable member contains a resin having at least one group selected from the group consisting of an amido group, an imido group, a ketone group, and a sulfide group.

Abstract: The present invention provides a compound or a pharmaceutically acceptable salt thereof having an inhibitory action on the interaction between menin and an MLL protein. The compound represented by the formula (1) or a pharmaceutically acceptable salt thereof. wherein, in the formula (1), the dotted circle, R1, R2, R3, R4, R5, R6, R7, R8, Ring Q1, W, m and n are each as defined in the description.

Abstract: The present invention provides a compound or a pharmaceutically acceptable salt thereof having an inhibitory action on the interaction between menin and an MLL protein. The compound represented by the formula (1) or a pharmaceutically acceptable salt thereof. wherein, in the formula (1), the dotted circle, R1, R2, R3, R4, R5, R6, R7, R8, Ring Q1, W, m and n are each as defined in the description.

Abstract: A method for manufacturing semiconductor devices includes: forming a plurality of semiconductor devices in a first region of a primary surface of a wafer; forming a plurality of cleave initiation portions in a second region of a primary surface different from the first region; and cleaving the wafer sequentially, using the plurality of cleave initiation portions as initiation points, starting from a cleave initiation portion that is relatively difficult to cleave among the plurality of cleave initiation portions. Forming the plurality of cleave initiation portions includes forming the plurality of first grooves by etching portions of the second region. Due to this, the yield and the manufacturing efficiency for semiconductor devices can be enhanced.

Abstract: The present invention provides a compound or a pharmaceutically acceptable salt thereof having an inhibitory action on the interaction between menin and an MLL protein. The compound represented by the formula (1) or a pharmaceutically acceptable salt thereof. wherein, in the formula (1), the dotted circle, R1, R2, R3, R4, R5, R6, R7, R8, Ring Q1, W, m and n are each as defined in the description.

Abstract: The static charge eliminator includes a charger including one or more charging units, and a grounded needle-shaped conductor. The charger is configured to charge an insulating film such that the absolute value of the surface potential of the insulating film is 3 kV or more. The needle-shaped conductor is arranged to generate a corona discharge between the needle-shaped conductor and the insulating film charged by the charger. Thereby, the static charges on the insulating film can be reliably eliminated.

Abstract: The present invention provides a compound or a pharmaceutically acceptable salt thereof having an inhibitory action on the interaction between menin and an MLL protein. The compound represented by the formula (1) or a pharmaceutically acceptable salt thereof. wherein, in the formula (1), the dotted circle, R1, R2, R3, R4, R5, R6, R7, R8, Ring Q1, W, m and n are each as defined in the description.

Abstract: A method includes a step of forming a plurality of semiconductor devices having active regions, in a wafer, a step of forming a plurality of cleavage grooves on an upper surface side of the wafer, and a step of cleaving the wafer from the upper surface side of the wafer to expose steps formed by the plurality of cleavage grooves, and the plurality of active regions, on a sectional surface, wherein the active region is provided in a semicircle that has a radius that is a distance from a bottom of the cleavage groove to a lower surface of the wafer, and has a center that is on the lower surface of the wafer and is immediately below the cleavage groove in a cleavage propagation direction.

Abstract: A semiconductor device production method includes providing a first electrode and a second electrode on a rear surface of a substrate where an active region emitting light is formed and providing a laminated object formed of a material less brittle than the substrate at part of a region between the first electrode and the second electrode so as to position directly below the active region; and exposing a plane on which the active region appears by cleavage of the substrate together with the laminated object in a state where the laminated object is located directly above the active region.

Abstract: A method for manufacturing semiconductor devices includes: forming a plurality of semiconductor devices in a first region of a primary surface of a wafer; forming a plurality of cleave initiation portions in a second region of a primary surface different from the first region; and cleaving the wafer sequentially, using the plurality of cleave initiation portions as initiation points, starting from a cleave initiation portion that is relatively difficult to cleave among the plurality of cleave initiation portions. Forming the plurality of cleave initiation portions includes forming the plurality of first grooves by etching portions of the second region. Due to this, the yield and the manufacturing efficiency for semiconductor devices can be enhanced.

Abstract: A method includes a step of forming a plurality of semiconductor devices having active regions, in a wafer, a step of forming a plurality of cleavage grooves on an upper surface side of the wafer, and a step of cleaving the wafer from the upper surface side of the wafer to expose steps formed by the plurality of cleavage grooves, and the plurality of active regions, on a sectional surface, wherein the active region is provided in a semicircle that has a radius that is a distance from a bottom of the cleavage groove to a lower surface of the wafer, and has a center that is on the lower surface of the wafer and is immediately below the cleavage groove in a cleavage propagation direction.

Abstract: The static charge eliminator includes a charger including one or more charging units, and a grounded needle-shaped conductor. The charger is configured to charge an insulating film such that the absolute value of the surface potential of the insulating film is 3 kV or more. The needle-shaped conductor is arranged to generate a corona discharge between the needle-shaped conductor and the insulating film charged by the charger. Thereby, the static charges on the insulating film can be reliably eliminated.

Abstract: A method of manufacturing a semiconductor device includes: forming a plurality of semiconductor devices on a main surface of a wafer; forming a plurality of cleavage groove groups arranged on a division reference line; and cleaving the wafer along the division reference line to separate the plurality of semiconductor devices from each other. At least one of the plurality of cleavage groove groups is arranged for four semiconductor devices of the plurality of semiconductor devices. These four semiconductor devices are adjacent to each other. The plurality of cleavage groove groups each include a plurality of cleavage grooves arranged on the division reference line. Thereby, the semiconductor device can be improved in manufacturing yield.

Abstract: The present invention is intended to provide a compound or a pharmacologically acceptable salt thereof which is useful in the treatment of a tumor through its ROS1 kinase enzyme activity inhibitory effect and NTRK kinase enzyme inhibitory effect. The present invention provides a compound having an imidazo[1,2-b]pyridazine structure represented by the general formula (I) or a pharmacologically acceptable salt thereof, and a pharmaceutical composition comprising the compound. In the formula, R1, G, T, Y1, Y2, Y3, and Y4 are as defined herein.

Abstract: An arithmetic processor for measuring bone density using a correspondence relationship between a luminance value of transmitted radiation and a thickness of a reference material is provided. The luminance value is obtained by applying radiation, which is emitted from a radiation source upon application of a tube voltage to the radiation source, to the reference material having different thicknesses and detecting the radiation transmitted through the reference material. The arithmetic processor includes: a generating unit that generates, based on the detected luminance value, a luminance profile representing the correspondence relationship; a normalizing unit that generates a normalized profile by normalizing the luminance profile based on a maximum value and a minimum value in the luminance profile; and a determining unit that determines whether or not each luminance value corresponding to each thickness in the normalized profile is within a range defined in advance by the tube voltage and each thickness.

Abstract: The present invention is intended to provide a compound or a pharmacologically acceptable salt thereof which is useful in the treatment of a tumor through its ROS1 kinase enzyme activity inhibitory effect and NTRK kinase enzyme inhibitory effect. The present invention provides a compound having an imidazo[1,2-b]pyridazine structure represented by the general formula (I) or a pharmacologically acceptable salt thereof, and a pharmaceutical composition comprising the compound. In the formula, R1, G, T, Y1, Y2, Y3, and Y4 are as defined herein.

Abstract: An arithmetic processor for measuring bone density using a correspondence relationship between a luminance value of transmitted radiation and a thickness of a reference material is provided. The luminance value is obtained by applying radiation, which is emitted from a radiation source upon application of a tube voltage to the radiation source, to the reference material having different thicknesses and detecting the radiation transmitted through the reference material. The arithmetic processor includes: a generating unit that generates, based on the detected luminance value, a luminance profile representing the correspondence relationship; a normalizing unit that generates a normalized profile by normalizing the luminance profile based on a maximum value and a minimum value in the luminance profile; and a determining unit that determines whether or not each luminance value corresponding to each thickness in the normalized profile is within a range defined in advance by the tube voltage and each thickness.

Abstract: The present invention is intended to provide a compound or a pharmacologically acceptable salt thereof which is useful in the treatment of a tumor through its ROS1 kinase enzyme activity inhibitory effect and NTRK kinase enzyme inhibitory effect. The present invention provides a compound having an imidazo[1,2-b]pyridazine structure represented by the general formula (I) or a pharmacologically acceptable salt thereof, and a pharmaceutical composition comprising the compound. In the formula, R1, G, T, Y1, Y2, Y3, and Y4 are as defined herein.

Abstract: From radiation images obtained by driving radiation tube with a plurality of tube voltages, including a normal tube voltage, a density gradient with respect to at least two sections of a reference substance having different radiation transmission characteristics is obtained for each of the plurality of tube voltages prior to obtaining a bone mineral density. If a radiation image captured for obtaining a bone mineral density is determined to have been captured under a tube voltage other than the normal tube voltage, an image signal representing the image and/or a bone mineral density analysis result is corrected so as to correspond to that which should have been obtained if the image had been captured under the normal tube voltage based on the relationship between the density gradient in the image and the density gradient in the radiation image captured under the normal tube voltage.

Abstract: The present invention is intended to provide a compound or a pharmacologically acceptable salt thereof which is useful in the treatment of a tumor through its ROS1 kinase enzyme activity inhibitory effect and NTRK kinase enzyme inhibitory effect. The present invention provides a compound having an imidazo[1,2-b]pyridazine structure represented by the general formula (I) or a pharmacologically acceptable salt thereof, and a pharmaceutical composition comprising the compound. In the formula, R1, G, T, Y1, Y2, Y3, and Y4 are as defined herein.