Abstract: A virtual fabrication environment for semiconductor device fabrication that includes an analytics module for performing key parameter identification, process model calibration and variability analysis is discussed.

Abstract: A virtual fabrication environment for semiconductor device fabrication that includes an analytics module for performing key parameter identification, process model calibration and variability analysis is discussed.

Abstract: Embodiments of the present invention provide the ability to perform deformation and stress analysis modeling in a virtual fabrication environment. More particularly, embodiments enable the virtual fabrication environment to model deformation and stress analysis directly from a voxel-based model without requiring generation of an interface conforming mesh. Stress fields for semiconductor device structures may be determined at designated points in the process sequence used to fabricate the semiconductor device.

Abstract: A virtual fabrication environment for semiconductor device structures that includes the use of virtual metrology measurement data to optimize a virtual fabrication sequence is described. Further, calibration of the virtual fabrication environment is performed by comparing virtual metrology measurement data from a virtual fabrication run with a subset of measurements performed in a physical fabrication environment. Additionally, virtual experiments conducted in the virtual fabrication environment of the present invention generate multiple device structure models using ranges of process and design parameter variations for an integrated process flow and design space of interest.

Abstract: A virtual fabrication environment for semiconductor device fabrication that includes an analytics module for performing key parameter identification, process model calibration and variability analysis is discussed.

Abstract: A virtual fabrication environment for semiconductor device structures that includes the use of virtual metrology measurement data to optimize a virtual fabrication sequence is described. Further, calibration of the virtual fabrication environment is performed by comparing virtual metrology measurement data from a virtual fabrication run with a subset of measurements performed in a physical fabrication environment. Additionally, virtual experiments conducted in the virtual fabrication environment of the present invention generate multiple device structure models using ranges of process and design parameter variations for an integrated process flow and design space of interest.

Abstract: A virtual fabrication environment for semiconductor device fabrication that includes an analytics module for performing key parameter identification, process model calibration and variability analysis is discussed.

Abstract: A virtual fabrication environment for semiconductor device structures that includes the use of virtual metrology measurement data to optimize a virtual fabrication sequence is described. Further, calibration of the virtual fabrication environment is performed by comparing virtual metrology data generated from a virtual fabrication run with a subset of measurements performed in a physical fabrication environment. Additionally, virtual experiments conducted in the virtual fabrication environment of the present invention generate multiple device structure models using ranges of process and design parameter variations for an integrated process flow and design space of interest.

Abstract: A virtual fabrication environment for semiconductor device structures that includes the use of virtual metrology measurement data to optimize a virtual fabrication sequence is described. Further, calibration of the virtual fabrication environment is performed by comparing virtual metrology data generated from a virtual fabrication run with a subset of measurements performed in a physical fabrication environment. Additionally, virtual experiments conducted in the virtual fabrication environment of the present invention generate multiple device structure models using ranges of process and design parameter variations for an integrated process flow and design space of interest.

Abstract: Systems and methods for multi-material mesh generation from fill-fraction voxel model data are discussed. Voxel representations of model data are used to generate robust and accurate multi-material meshes. More particularly, a mesh generation pipeline in a virtual fabrication environment is described that robustly generates high-quality triangle surface and tetrahedral volume meshes from multi-material fill-fraction voxel data. Multi-material topology is accurately captured while preserving characteristic feature edges of the model.

Abstract: A virtual fabrication environment for semiconductor device fabrication that includes an analytics module for performing process window optimization is discussed.

Abstract: Modeling of electrical behavior during the virtual fabrication of a semiconductor device structure is discussed. Electrical behavior occurring in a designated region of a semiconductor device structure may be determined during the virtual fabrication process. For example, resistance or capacitance values may be determined within a modeling domain of interest.

Abstract: A virtual fabrication environment for semiconductor device structures that includes the use of virtual metrology measurement data to optimize a virtual fabrication sequence is described. Further, calibration of the virtual fabrication environment is performed by comparing virtual metrology data generated from a virtual fabrication run with a subset of measurements performed in a physical fabrication environment. Additionally, virtual experiments conducted in the virtual fabrication environment of the present invention generate multiple device structure models using ranges of process and design parameter variations for an integrated process flow and design space of interest.

Abstract: A virtual fabrication environment for semiconductor device structures that includes the use of virtual metrology measurement data to optimize a virtual fabrication sequence is described. Further, calibration of the virtual fabrication environment is performed by comparing virtual metrology data generated from a virtual fabrication run with a subset of measurements performed in a physical fabrication environment. Additionally, virtual experiments conducted in the virtual fabrication environment of the present invention generate multiple device structure models using ranges of process and design parameter variations for an integrated process flow and design space of interest.

Abstract: A virtual fabrication environment for semiconductor device structures that includes the use of virtual metrology measurement data to optimize a virtual fabrication sequence is described. Further, calibration of the virtual fabrication environment is performed by comparing virtual metrology data generated from a virtual fabrication run with a subset of measurements performed in a physical fabrication environment. Additionally, virtual experiments conducted in the virtual fabrication environment of the present invention generate multiple device structure models using ranges of process and design parameter variations for an integrated process flow and design space of interest.

Abstract: A virtual fabrication environment for semiconductor device fabrication that includes an analytics module for performing key parameter identification, process model calibration and variability analysis is discussed.

Abstract: The modeling of a DSA step within a virtual fabrication process sequence for a semiconductor device structure is discussed. A 3D model is created by the virtual fabrication that represents and depicts the possible variation that can result from applying the DSA step as part of the larger fabrication sequence for the semiconductor device structure of interest. Embodiments capture the relevant behavior caused by polymer segregation into separate domains thereby allowing the modeling of the DSA step to take place with a speed appropriate for a virtual fabrication flow.

Abstract: Modeling of electrical behavior during the virtual fabrication of a semiconductor device structure is discussed. Electrical behavior occurring in a designated region of a semiconductor device structure may be determined during the virtual fabrication process. For example, resistance or capacitance values may be determined within a modeling domain of interest.

Abstract: Improving semiconductor device fabrication by enabling the identification and modeling of pattern dependent effects of fabrication processes is discussed. In one embodiment a local mask is generated from a 3-D model of a semiconductor device structure that was created in a 3-D virtual semiconductor fabrication environment from 2-D design layout data and a fabrication process sequence. The local mask is combined with a global mask based on the original design layout data to create a combined mask. The combined mask is convolved with at least one proximity function to generate a loading map which may be used to modify the behavior of one or more processes in the process sequence. This behavior modification enables the 3-D virtual semiconductor fabrication environment to deliver more accurate 3-D models that better predict the 3-D device structure when performing the virtual semiconductor device fabrication that serves as a prelude to physical fabrication.

Abstract: The modeling of a DSA step within a virtual fabrication process sequence for a semiconductor device structure is discussed. A 3D model is created by the virtual fabrication that represents and depicts the possible variation that can result from applying the DSA step as part of the larger fabrication sequence for the semiconductor device structure of interest. Embodiments capture the relevant behavior caused by polymer segregation into separate domains thereby allowing the modeling of the DSA step to take place with a speed appropriate for a virtual fabrication flow.