Patents by Inventor Kenneth D. Schatz
Kenneth D. Schatz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11915911Abstract: An apparatus for distributing plasma products includes first and second electrodes that each include planar surfaces. The first electrode forms first apertures from a first planar surface to a second planar surface; the second electrode forms second apertures from the third planar surface to the fourth planar surface. The electrodes couple through one or more adjustable couplers such that the third planar surface is disposed adjacent to the second planar surface with a gap therebetween, the gap having a gap distance. Each of the adjustable couplers has a range of adjustment. The first and second apertures are arranged such that for at least one position within the ranges of adjustment, none of the first apertures aligns with any of the second apertures to form an open straight-line path extending through both the first and second electrodes.Type: GrantFiled: June 29, 2020Date of Patent: February 27, 2024Assignee: Applied Materials, Inc.Inventors: Tien Fak Tan, Saravjeet Singh, Dmitry Lubomirsky, Tae Wan Kim, Kenneth D. Schatz, Tae Seung Cho, Lok Kee Loh
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Patent number: 11901161Abstract: Methods and apparatus for reducing particle generation in a remote plasma source (RPS) include an RPS having a first plasma source with a first electrode and a second electrode, wherein the first electrode and the second electrode are symmetrical with hollow cavities configured to induce a hollow cathode effect within the hollow cavities, and wherein the RPS provides radicals or ions into the processing volume, and a radio frequency (RF) power source configured to provide a symmetrical driving waveform on the first electrode and the second electrode to produce an anodic cycle and a cathodic cycle of the RPS, wherein the anodic cycle and the cathodic cycle operate in a hollow cathode effect mode.Type: GrantFiled: May 26, 2022Date of Patent: February 13, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Tae Seung Cho, Saravana Kumar Natarajan, Kenneth D. Schatz, Dmitry Lubomirsky, Samartha Subramanya
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Patent number: 11894217Abstract: A method of reducing reflected Radio Frequency (RF) power in substrate processing chambers may include accessing input parameters for a processing chamber that are derived from a recipe to perform a process on a substrate. The input parameters may be provided to a model that has been trained using previous input parameters and corresponding sensor measurements for the chamber. A predicted amount of reflected RF power may be received from the model and it may be determined whether the predicted reflected RF power is optimized. The input parameters may be repeatedly adjusted and processed by the model until input parameter values are found that optimize the reflected RF power. Optimized input parameters may then be provided to the chamber to process the substrate.Type: GrantFiled: February 21, 2023Date of Patent: February 6, 2024Assignee: Applied Materials, Inc.Inventors: Soonwook Jung, Kenneth D. Schatz
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Patent number: 11715625Abstract: Exemplary semiconductor processing systems may include a pedestal configured to support a semiconductor substrate. The pedestal may be operable as a first plasma-generating electrode. The systems may include a lid plate defining a radial volume. The systems may include a faceplate supported with the lid plate. The faceplate may be operable as a second plasma-generating electrode. A plasma processing region may be defined between the pedestal and the faceplate within the radial volume defined by the faceplate. The faceplate may define a plurality of first apertures. The systems may include a showerhead positioned between the faceplate and the pedestal. The showerhead may define a plurality of second apertures comprising a greater number of apertures than the plurality of first apertures.Type: GrantFiled: September 10, 2020Date of Patent: August 1, 2023Assignee: Applied Materials, Inc.Inventors: Greg Toland, Kenneth D. Schatz, Laksheswar Kalita, Dmitry Lubomirsky
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Publication number: 20230197405Abstract: A method of reducing reflected Radio Frequency (RF) power in substrate processing chambers may include accessing input parameters for a processing chamber that are derived from a recipe to perform a process on a substrate. The input parameters may be provided to a model that has been trained using previous input parameters and corresponding sensor measurements for the chamber. A predicted amount of reflected RF power may be received from the model and it may be determined whether the predicted reflected RF power is optimized. The input parameters may be repeatedly adjusted and processed by the model until input parameter values are found that optimize the reflected RF power. Optimized input parameters may then be provided to the chamber to process the substrate.Type: ApplicationFiled: February 21, 2023Publication date: June 22, 2023Applicant: Applied Materials, Inc.Inventors: Soonwook Jung, Kenneth D. Schatz
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Publication number: 20230197416Abstract: The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows of reactants to different regions of the plasma to offset any irregularities observed in process uniformity. A first precursor may be delivered to the center of the plasma above the center of the substrate/pedestal while a second precursor may be delivered to an outer portion of the plasma above an outer portion of the substrate/pedestal. In so doing, a substrate residing on the pedestal may experience a more uniform etch or deposition profile across the entire surface.Type: ApplicationFiled: February 13, 2023Publication date: June 22, 2023Applicant: Applied Materials, Inc.Inventors: Saravjeet Singh, Kenneth D. Schatz, Alan Tso, Marlin Wijekoon, Dimitri Kioussis
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Publication number: 20230116437Abstract: Systems and methods may be used to produce coated components. Exemplary semiconductor chamber components may include an aluminum alloy comprising nickel and may be characterized by a surface. The surface may include a corrosion resistant coating. The corrosion resistant coating may include a conformal layer and a non-metal layer. The conformal layer may extend about the semiconductor chamber component. The non-metal oxide layer may extend over a surface of the conformal layer. The non-metal oxide layer may be characterized by an amorphous microstructure having a hardness of from about 300 HV to about 10,000 HV. The non-metal oxide layer may also be characterized by an sp2 to sp3 hybridization ratio of from about 0.01 to about 0.5 and a hydrogen content of from about 1 wt. % to about 35 wt. %.Type: ApplicationFiled: December 14, 2022Publication date: April 13, 2023Applicant: Applied Materials, Inc.Inventors: Laksheswar Kalita, Son Nguyen, Dmitry Lubomirsky, Kenneth D. Schatz
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Publication number: 20230096706Abstract: A method of characterizing plasmas during semiconductor processes may include receiving operating conditions for a semiconductor process, where the semiconductor process may be configured to generate a plasma inside of a chamber of a semiconductor processing system. The method may also include providing the operating conditions for the semiconductor process as inputs to a model, where the model may have been trained to characterize plasmas in the chamber. The method may also include generating, using the model, a characterization of the plasma in the chamber resulting from the operating conditions of the semiconductor process.Type: ApplicationFiled: September 27, 2021Publication date: March 30, 2023Applicant: Applied Materials, Inc.Inventors: Soonwook Jung, Kenneth D. Schatz, Hunkee Cho
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Patent number: 11587765Abstract: A method of reducing reflected Radio Frequency (RF) power in substrate processing chambers may include accessing input parameters for a processing chamber that are derived from a recipe to perform a process on a substrate. The input parameters may be provided to a model that has been trained using previous input parameters and corresponding sensor measurements for the chamber. A predicted amount of reflected RF power may be received from the model and it may be determined whether the predicted reflected RF power is optimized. The input parameters may be repeatedly adjusted and processed by the model until input parameter values are found that optimize the reflected RF power. Optimized input parameters may then be provided to the chamber to process the substrate.Type: GrantFiled: November 22, 2020Date of Patent: February 21, 2023Assignee: Applied Materials, Inc.Inventors: Soonwook Jung, Kenneth D. Schatz
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Patent number: 11581165Abstract: The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows of reactants to different regions of the plasma to offset any irregularities observed in process uniformity. A first precursor may be delivered to the center of the plasma above the center of the substrate/pedestal while a second precursor may be delivered to an outer portion of the plasma above an outer portion of the substrate/pedestal. In so doing, a substrate residing on the pedestal may experience a more uniform etch or deposition profile across the entire surface.Type: GrantFiled: January 25, 2021Date of Patent: February 14, 2023Assignee: Applied Materials, Inc.Inventors: Saravjeet Singh, Kenneth D. Schatz, Alan Tso, Marlin Wijekoon, Dimitri Kioussis
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Patent number: 11557464Abstract: Systems and methods may be used to produce coated components. Exemplary semiconductor chamber components may include an aluminum alloy comprising nickel and may be characterized by a surface. The surface may include a corrosion resistant coating. The corrosion resistant coating may include a conformal layer and a non-metal layer. The conformal layer may extend about the semiconductor chamber component. The non-metal oxide layer may extend over a surface of the conformal layer. The non-metal oxide layer may be characterized by an amorphous microstructure having a hardness of from about 300 HV to about 10,000 HV. The non-metal oxide layer may also be characterized by an sp2 to sp3 hybridization ratio of from about 0.01 to about 0.5 and a hydrogen content of from about 1 wt. % to about 35 wt. %.Type: GrantFiled: June 3, 2020Date of Patent: January 17, 2023Assignee: Applied Materials, Inc.Inventors: Laksheswar Kalita, Son Nguyen, Dmitry Lubomirsky, Kenneth D. Schatz
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Publication number: 20230005765Abstract: Exemplary semiconductor processing systems may include a processing chamber. The systems may include a remote plasma unit coupled with the processing chamber. The systems may include an adapter coupled between the remote plasma unit and the processing chamber. The adapter may be characterized by a first end and a second end opposite the first end. The remote plasma unit may be coupled with the adapter at the first end. The adapter may define a first central channel extending more than 50% of a length of the adapter from the first end of the adapter. The adapter may define a second central channel extending less than 50% of the length of the adapter from the second end of the adapter. The adapter may define a transition between the first central channel and the second central channel.Type: ApplicationFiled: July 2, 2021Publication date: January 5, 2023Applicant: Applied Materials, Inc.Inventors: Son T. Nguyen, Kenneth D. Schatz, Anh N. Nguyen, Soonwook Jung, Ryan Pakulski, Anchuan Wang, Zihui Li
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Publication number: 20220293396Abstract: Methods and apparatus for reducing particle generation in a remote plasma source (RPS) include an RPS having a first plasma source with a first electrode and a second electrode, wherein the first electrode and the second electrode are symmetrical with hollow cavities configured to induce a hollow cathode effect within the hollow cavities, and wherein the RPS provides radicals or ions into the processing volume, and a radio frequency (RF) power source configured to provide a symmetrical driving waveform on the first electrode and the second electrode to produce an anodic cycle and a cathodic cycle of the RPS, wherein the anodic cycle and the cathodic cycle operate in a hollow cathode effect mode.Type: ApplicationFiled: May 26, 2022Publication date: September 15, 2022Inventors: Tae Seung CHO, Saravana Kumar NATARAJAN, Kenneth D. SCHATZ, Dmitry LUBOMIRSKY, Samartha SUBRAMANYA
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Patent number: 11373845Abstract: Methods and apparatus for reducing particle generation in a remote plasma source (RPS) include an RPS having a first plasma source with a first electrode and a second electrode, wherein the first electrode and the second electrode are symmetrical with hollow cavities configured to induce a hollow cathode effect within the hollow cavities, and wherein the RPS provides radicals or ions into the processing volume, and a radio frequency (RF) power source configured to provide a symmetrical driving waveform on the first electrode and the second electrode to produce an anodic cycle and a cathodic cycle of the RPS, wherein the anodic cycle and the cathodic cycle operate in a hollow cathode effect mode.Type: GrantFiled: June 5, 2020Date of Patent: June 28, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Tae Seung Cho, Saravana Kumar Natarajan, Kenneth D. Schatz, Dmitry Lubomirsky, Samartha Subramanya
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Publication number: 20220165539Abstract: A method of reducing reflected Radio Frequency (RF) power in substrate processing chambers may include accessing input parameters for a processing chamber that are derived from a recipe to perform a process on a substrate. The input parameters may be provided to a model that has been trained using previous input parameters and corresponding sensor measurements for the chamber. A predicted amount of reflected RF power may be received from the model and it may be determined whether the predicted reflected RF power is optimized. The input parameters may be repeatedly adjusted and processed by the model until input parameter values are found that optimize the reflected RF power. Optimized input parameters may then be provided to the chamber to process the substrate.Type: ApplicationFiled: November 22, 2020Publication date: May 26, 2022Applicant: Applied Materials, Inc.Inventors: Soonwook Jung, Kenneth D. Schatz
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Publication number: 20210384011Abstract: Methods and apparatus for reducing particle generation in a remote plasma source (RPS) include an RPS having a first plasma source with a first electrode and a second electrode, wherein the first electrode and the second electrode are symmetrical with hollow cavities configured to induce a hollow cathode effect within the hollow cavities, and wherein the RPS provides radicals or ions into the processing volume, and a radio frequency (RF) power source configured to provide a symmetrical driving waveform on the first electrode and the second electrode to produce an anodic cycle and a cathodic cycle of the RPS, wherein the anodic cycle and the cathodic cycle operate in a hollow cathode effect mode.Type: ApplicationFiled: June 5, 2020Publication date: December 9, 2021Inventors: Tae Seung CHO, Saravana Kumar NATARAJAN, Kenneth D. SCHATZ, Dmitry LUBOMIRSKY, Samartha SUBRAMANYA
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Publication number: 20210265134Abstract: The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows of reactants to different regions of the plasma to offset any irregularities observed in process uniformity. A first precursor may be delivered to the center of the plasma above the center of the substrate/pedestal while a second precursor may be delivered to an outer portion of the plasma above an outer portion of the substrate/pedestal. In so doing, a substrate residing on the pedestal may experience a more uniform etch or deposition profile across the entire surface.Type: ApplicationFiled: January 25, 2021Publication date: August 26, 2021Applicant: Applied Materials, Inc.Inventors: Saravjeet Singh, Kenneth D. Schatz, Alan Tso, Marlin Wijekoon, Dimitri Kioussis
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Publication number: 20210082665Abstract: Exemplary semiconductor processing systems may include a pedestal configured to support a semiconductor substrate. The pedestal may be operable as a first plasma-generating electrode. The systems may include a lid plate defining a radial volume. The systems may include a faceplate supported with the lid plate. The faceplate may be operable as a second plasma-generating electrode. A plasma processing region may be defined between the pedestal and the faceplate within the radial volume defined by the faceplate. The faceplate may define a plurality of first apertures. The systems may include a showerhead positioned between the faceplate and the pedestal. The showerhead may define a plurality of second apertures comprising a greater number of apertures than the plurality of first apertures.Type: ApplicationFiled: September 10, 2020Publication date: March 18, 2021Applicant: Applied Materials, Inc.Inventors: Greg Toland, Kenneth D. Schatz, Laksheswar Kalita, Dmitry Lubomirsky
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Patent number: 10903054Abstract: The present technology includes improved gas distribution designs for forming uniform plasmas during semiconductor processing operations or for treating the interior of semiconductor processing chambers. While conventional gas distribution assemblies may receive a specific reactant or reactant ratio which is then distributed into the plasma region, the presently described technology allows for improved control of the reactant input distribution. The technology allows for separate flows of reactants to different regions of the plasma to offset any irregularities observed in process uniformity. A first precursor may be delivered to the center of the plasma above the center of the substrate/pedestal while a second precursor may be delivered to an outer portion of the plasma above an outer portion of the substrate/pedestal. In so doing, a substrate residing on the pedestal may experience a more uniform etch or deposition profile across the entire surface.Type: GrantFiled: December 19, 2017Date of Patent: January 26, 2021Assignee: Applied Materials, Inc.Inventors: Saravjeet Singh, Kenneth D. Schatz, Alan Tso, Marlin Wijekoon, Dimitri Kioussis
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Publication number: 20210005435Abstract: Methods, apparatus, and systems for substrate processing are provided. Apparatus can include a controller; a processing chamber; a substrate supporting a substrate; and an infrared sensor assembly disposed adjacent the substrate support and comprising: a sample chamber one of made from or coated with nickel or nickel alloy and configured to collect chemicals which are present while the substrate is being processed in the processing chamber; an IR light source disposed at one end of the sample chamber and an IR detector disposed at an opposite end of the sample chamber; and a pair of windows positioned in an optical path between the IR light source and the IR detector, wherein the IR light source transmits IR light along the optical path and the IR detector detects the transmitted IR light and transmits a signal to the controller for determining a concentration of the chemicals present in the processing chamber.Type: ApplicationFiled: July 2, 2019Publication date: January 7, 2021Inventors: Soonwook Jung, Laksheswar Kalita, Tae S Cho, Kenneth D Schatz