Patents by Inventor Kenneth E. Morgan

Kenneth E. Morgan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Large aluminum nitride crystals with reduced defects and methods of making them
    Patent number: 11225731
    Abstract: Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 104 cm?2 and an inclusion density below 104 cm?3 and/or a MV density below 104 cm?3.
    Type: Grant
    Filed: February 8, 2017
    Date of Patent: January 18, 2022
    Assignee: CRYSTAL IS, INC.
    Inventors: Robert Bondokov, Kenneth E. Morgan, Glen A. Slack, Leo J. Schowalter
  • Defect reduction in seeded aluminum nitride crystal growth
    Patent number: 11124892
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Grant
    Filed: May 22, 2020
    Date of Patent: September 21, 2021
    Assignee: CRYSTAL IS, INC.
    Inventors: Robert T. Bondokov, Kenneth E. Morgan, Leo J. Schowalter, Glen A. Slack
  • DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH
    Publication number: 20200354852
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Application
    Filed: May 22, 2020
    Publication date: November 12, 2020
    Inventors: Robert T. Bondokov, Kenneth E. Morgan, Leo J. Schowalter, Glen A. Slack
  • Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
    Patent number: 10801127
    Abstract: In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour.
    Type: Grant
    Filed: April 26, 2019
    Date of Patent: October 13, 2020
    Assignee: CRYSTAL IS, INC.
    Inventors: Sandra B. Schujman, Shailaja P. Rao, Robert T. Bondokov, Kenneth E. Morgan, Glen A. Slack, Leo J. Schowalter
  • Defect reduction in seeded aluminum nitride crystal growth
    Patent number: 10697085
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm=2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Grant
    Filed: October 15, 2018
    Date of Patent: June 30, 2020
    Assignee: CRYSTAL IS, INC.
    Inventors: Robert T. Bondokov, Kenneth E. Morgan, Leo J. Schowalter, Glen A. Slack
  • ALUMINUM NITRIDE BULK CRYSTALS HAVING HIGH TRANSPARENCY TO ULTRAVIOLET LIGHT AND METHODS OF FORMING THEM
    Publication number: 20190316272
    Abstract: In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour.
    Type: Application
    Filed: April 26, 2019
    Publication date: October 17, 2019
    Inventors: Sandra B. Schujman, Shailaja P. Rao, Robert T. Bondokov, Kenneth E. Morgan, Glen A. Slack, Leo J. Schowalter
  • Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
    Patent number: 10316428
    Abstract: In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour.
    Type: Grant
    Filed: August 15, 2016
    Date of Patent: June 11, 2019
    Assignee: Crystal IS, Inc.
    Inventors: Sandra B. Schujman, Shailaja P. Rao, Robert T. Bondokov, Kenneth E. Morgan, Glen A. Slack, Leo J. Schowalter
  • DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH
    Publication number: 20190106808
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ?100 cm=2, Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Application
    Filed: October 15, 2018
    Publication date: April 11, 2019
    Inventors: Robert T. Bondokov, Kenneth E. Morgan, Leo J. Schowalter, Glen A. Slack
  • Defect reduction in seeded aluminum nitride crystal growth
    Patent number: 10125432
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Grant
    Filed: March 20, 2017
    Date of Patent: November 13, 2018
    Assignee: CRYSTAL IS , INC.
    Inventors: Robert T. Bondokov, Kenneth E. Morgan, Leo J. Schowalter, Glen A. Slack
  • Method and apparatus for producing large, single-crystals of aluminum nitride
    Patent number: 9970127
    Abstract: Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm?2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.
    Type: Grant
    Filed: August 8, 2016
    Date of Patent: May 15, 2018
    Assignee: CRYSTAL IS, INC.
    Inventors: Leo Schowalter, Glen A. Slack, Juan Carlos Rojo, Robert T. Bondokov, Kenneth E. Morgan, Joseph A. Smart
  • DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH
    Publication number: 20170191184
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Application
    Filed: March 20, 2017
    Publication date: July 6, 2017
    Inventors: Robert T. Bondokov, Kenneth E. Morgan, Leo J. Schowalter, Glen A. Slack
  • METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMINUM NITRIDE
    Publication number: 20170159207
    Abstract: Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm?2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.
    Type: Application
    Filed: August 8, 2016
    Publication date: June 8, 2017
    Inventors: Leo Schowalter, Glen A. Slack, Juan Carlos Rojo, Robert T. Bondokov, Kenneth E. Morgan, Joseph A. Smart
  • Defect reduction in seeded aluminum nitride crystal growth
    Patent number: 9670591
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Grant
    Filed: August 13, 2014
    Date of Patent: June 6, 2017
    Assignee: CRYSTAL IS, INC.
    Inventors: Robert T. Bondokov, Kenneth E. Morgan, Leo J. Schowalter, Glen A. Slack
  • LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF MAKING THEM
    Publication number: 20170145592
    Abstract: Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 104 cm?2 and an inclusion density below 104 cm?3 and/or a MV density below 104 cm?3.
    Type: Application
    Filed: February 8, 2017
    Publication date: May 25, 2017
    Inventors: Robert Bondokov, Kenneth E. Morgan, Glen A. Slack, Leo J. Schowalter
  • Defect reduction in seeded aluminum nitride crystal growth
    Patent number: 9624601
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Grant
    Filed: August 13, 2014
    Date of Patent: April 18, 2017
    Assignee: CRYSTAL IS, INC.
    Inventors: Robert T. Bondokov, Kenneth E. Morgan, Leo J. Schowalter, Glen A. Stack
  • Large aluminum nitride crystals with reduced defects and methods of making them
    Patent number: 9598791
    Abstract: Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 104 cm?2 and an inclusion density below 104 cm?3 and/or a MV density below 104 cm?3.
    Type: Grant
    Filed: March 25, 2016
    Date of Patent: March 21, 2017
    Assignee: CRYSTAL IS, INC.
    Inventors: Robert Bondokov, Kenneth E. Morgan, Glen A. Slack, Leo J. Schowalter
  • ALUMINUM NITRIDE BULK CRYSTALS HAVING HIGH TRANSPARENCY TO ULTRAVIOLET LIGHT AND METHODS OF FORMING THEM
    Publication number: 20160348273
    Abstract: In various embodiments, methods of forming single-crystal AN include providing a substantially undoped polycrystalline AN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000 ° C., and cooling the bulk AN crystal to a first temperature between approximately 1500 ° C. and approximately 1800 ° C. at a first rate less than approximately 250 ° C./hour.
    Type: Application
    Filed: August 15, 2016
    Publication date: December 1, 2016
    Inventors: Sandra B. Schujman, Shailaja P. Rao, Robert T. Bondokov, Kenneth E. Morgan, Glen A. Slack, Leo J. Schowalter
  • Method and apparatus for producing large, single-crystals of aluminum nitride
    Patent number: 9447521
    Abstract: Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm?2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.
    Type: Grant
    Filed: October 22, 2014
    Date of Patent: September 20, 2016
    Assignee: Crystal IS, Inc.
    Inventors: Leo Schowalter, Glen A. Slack, Juan Carlos Rojo, Robert T. Bondokov, Kenneth E. Morgan, Joseph A. Smart
  • Aluminum nitride bulk crystals having high transparency to untraviolet light and methods of forming them
    Patent number: 9447519
    Abstract: In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour.
    Type: Grant
    Filed: April 16, 2015
    Date of Patent: September 20, 2016
    Assignee: Crystal IS, Inc.
    Inventors: Sandra B. Schujman, Shailaja P. Rao, Robert T. Bondokov, Kenneth E. Morgan, Glen A. Slack, Leo J. Schowalter
  • LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF MAKING THEM
    Publication number: 20160208417
    Abstract: Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 104 cm?2 and an inclusion density below 104 cm?3 and/or a MV density below 104 cm?3.
    Type: Application
    Filed: March 25, 2016
    Publication date: July 21, 2016
    Inventors: Robert Bondokov, Kenneth E. Morgan, Glen A. Slack, Leo J. Schowalter