Patents by Inventor Kenneth E. Morgan

Kenneth E. Morgan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF MAKING THEM
    Publication number: 20160208417
    Abstract: Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 104 cm?2 and an inclusion density below 104 cm?3 and/or a MV density below 104 cm?3.
    Type: Application
    Filed: March 25, 2016
    Publication date: July 21, 2016
    Inventors: Robert Bondokov, Kenneth E. Morgan, Glen A. Slack, Leo J. Schowalter
  • ALUMINUM NITRIDE BULK CRYSTALS HAVING HIGH TRANSPARENCY TO ULTRAVIOLET LIGHT AND METHODS OF FORMING THEM
    Publication number: 20150218729
    Abstract: In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour.
    Type: Application
    Filed: April 16, 2015
    Publication date: August 6, 2015
    Inventors: Sandra B. Schujman, Shailaja P. Rao, Robert T. Bondokov, Kenneth E. Morgan, Glen A. Slack, Leo J. Schowalter
  • Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
    Patent number: 9034103
    Abstract: In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour.
    Type: Grant
    Filed: June 30, 2010
    Date of Patent: May 19, 2015
    Assignee: CRYSTAL IS, INC.
    Inventors: Sandra B. Schujman, Shailaja P. Rao, Robert T. Bondokov, Kenneth E. Morgan, Glen A. Slack, Leo J. Schowalter
  • METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMINUM NITRIDE
    Publication number: 20150079329
    Abstract: Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm?2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.
    Type: Application
    Filed: October 22, 2014
    Publication date: March 19, 2015
    Inventors: Leo Schowalter, Glen A. Slack, Juan Carlos Rojo, Robert T. Bondokov, Kenneth E. Morgan, Joseph A. Smart
  • DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH
    Publication number: 20150020731
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Application
    Filed: August 13, 2014
    Publication date: January 22, 2015
    Inventors: Robert T. Bondokov, Kenneth E. Morgan, Leo J. Schowalter, Glen A. Stack
  • DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH
    Publication number: 20150013592
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Application
    Filed: August 13, 2014
    Publication date: January 15, 2015
    Inventors: Robert T. Bondokov, Kenneth E. Morgan, Leo J. Schowalter, Glen A. Slack
  • Method and apparatus for producing large, single-crystals of aluminum nitride
    Patent number: 8896020
    Abstract: Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm?2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.
    Type: Grant
    Filed: August 23, 2013
    Date of Patent: November 25, 2014
    Assignee: Crystal IS, Inc.
    Inventors: Leo Schowalter, Glen A. Slack, Juan Carlos Rojo, Robert T. Bondokov, Kenneth E. Morgan, Joseph A. Smart
  • Defect reduction in seeded aluminum nitride crystal growth
    Patent number: 8834630
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Grant
    Filed: November 6, 2012
    Date of Patent: September 16, 2014
    Assignee: Crystal IS, Inc.
    Inventors: Robert T. Bondokov, Kenneth E. Morgan, Leo Schowalter, Glen A. Slack
  • LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF MAKING THEM
    Publication number: 20140093671
    Abstract: Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 104 cm?2 and an inclusion density below 104 cm?3 and/or a MV density below 104cm?3.
    Type: Application
    Filed: October 11, 2013
    Publication date: April 3, 2014
    Inventors: Robert Bondokov, Kenneth E. Morgan, Glen A. Slack, Leo J. Schowalter
  • METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMINUM NITRIDE
    Publication number: 20140061666
    Abstract: Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm?2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.
    Type: Application
    Filed: August 23, 2013
    Publication date: March 6, 2014
    Inventors: Leo Schowalter, Glen A. Slack, Juan Carlos Rojo, Robert T. Bondokov, Kenneth E. Morgan, Joseph A. Smart
  • Large aluminum nitride crystals with reduced defects and methods of making them
    Patent number: 8580035
    Abstract: Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 104 cm?2 and an inclusion density below 104 cm?3 and/or a MV density below 104 cm?3.
    Type: Grant
    Filed: December 6, 2012
    Date of Patent: November 12, 2013
    Assignee: Crystal IS, Inc.
    Inventors: Robert Bondokov, Kenneth E. Morgan, Glen A. Slack, Leo J. Schowalter
  • Method and apparatus for producing large, single-crystals of aluminum nitride
    Patent number: 8545629
    Abstract: Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm?2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.
    Type: Grant
    Filed: May 9, 2006
    Date of Patent: October 1, 2013
    Assignee: Crystal IS, Inc.
    Inventors: Leo J. Schowalter, Glen A. Slack, J. Carlos Rojo, Robert T. Bondokov, Kenneth E. Morgan, Joseph A. Smart
  • DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH
    Publication number: 20130157442
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Application
    Filed: November 6, 2012
    Publication date: June 20, 2013
    Inventors: Robert T. Bondokov, Kenneth E. Morgan, Leo Schowalter, Glen A. Slack
  • Defect reduction in seeded aluminum nitride crystal growth
    Patent number: 8323406
    Abstract: Bulk single crystal of aluminum nitride (AlN) having an a real planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
    Type: Grant
    Filed: January 17, 2008
    Date of Patent: December 4, 2012
    Assignee: Crystal IS, Inc.
    Inventors: Robert T. Bondokov, Kenneth E. Morgan, Leo J. Schowalter, Glen A. Slack
  • Nitride semiconductor heterostructures and related methods
    Patent number: 8222650
    Abstract: Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106 cm?2.
    Type: Grant
    Filed: November 12, 2009
    Date of Patent: July 17, 2012
    Assignee: Crystal IS, Inc.
    Inventors: Leo J. Schowalter, Joseph A. Smart, Shiwen Liu, Kenneth E. Morgan, Robert T. Bondokov, Timothy J. Bettles, Glen A. Slack
  • Methods for controllable doping of aluminum nitride bulk crystals
    Patent number: 8012257
    Abstract: Fabrication of doped and undoped stoichiometric polycrystalline AlN ceramics with high purity is accomplished by, for example, reacting Al pellets with nitrogen gas. Such polycrystalline AlN ceramics may be utilized in the fabrication of high purity AlN single crystals, which may be annealed to enhance a conductivity thereof.
    Type: Grant
    Filed: March 30, 2007
    Date of Patent: September 6, 2011
    Assignee: Crystal IS, Inc.
    Inventors: Kenneth E. Morgan, Leo J. Schowalter, Glen A. Slack
  • ALUMINUM NITRIDE BULK CRYSTALS HAVING HIGH TRANSPARENCY TO ULTRAVIOLET LIGHT AND METHODS OF FORMING THEM
    Publication number: 20110008621
    Abstract: In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour.
    Type: Application
    Filed: June 30, 2010
    Publication date: January 13, 2011
    Inventors: Sandra B. Schujman, Shailaja P. Rao, Robert T. Bondokov, Kenneth E. Morgan, Glen A. Slack, Leo J. Schowalter
  • NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS
    Publication number: 20100135349
    Abstract: Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106 cm?2.
    Type: Application
    Filed: November 12, 2009
    Publication date: June 3, 2010
    Applicant: Crystal IS, Inc.
    Inventors: Leo J. Schowalter, Joseph A. Smart, Shiwen Liu, Kenneth E. Morgan, Robert T. Bondokov, Timothy J. Bettles, Glen A. Slack
  • Nitride semiconductor heterostructures and related methods
    Patent number: 7638346
    Abstract: Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106 cm?2.
    Type: Grant
    Filed: August 14, 2006
    Date of Patent: December 29, 2009
    Assignee: Crystal IS, Inc.
    Inventors: Leo J. Schowalter, Joseph A. Smart, Shiwen Liu, Kenneth E. Morgan, Robert T. Bondokov, Timothy J. Bettles, Glen A. Slack
  • NITRIDE SEMICONDUCTOR HETEROSTRUCTURES AND RELATED METHODS
    Publication number: 20090283028
    Abstract: Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106 cm?2.
    Type: Application
    Filed: August 14, 2006
    Publication date: November 19, 2009
    Applicant: Crystal IS, Inc.
    Inventors: Leo J. Schowalter, Joseph A. Smart, Shiwen Liu, Kenneth E. Morgan, Robert T. Bondokov, Timothy J. Bettles, Glen A. Slack