Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and optical system to direct a beam of radiation onto a rotating substrate supported by a chuck, in atmosphere. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate. An optional gas injector system directs gas onto the substrate edge to aid in the reaction. Process by-products are removed via an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion zone, resulting in an increase in the number of usable die on a wafer.

Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and fiber-optic system to direct laser radiation onto a rotating substrate supported by a chuck. A laser beam is transmitted into a bundle of optical fibers, and the fibers accurately and precisely direct the beam to remove or transform organic or inorganic films, film stacks, residues, or particles, in atmosphere, from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate in a single process step. Reaction by-products are removed by means of an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion width, resulting in an increase in the number of usable die on a wafer.

Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and optical system to direct a beam of radiation onto a rotating substrate supported by a chuck. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles, in atmosphere, from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate in a single process step. An optional gas injector system directs gas onto the substrate edge to aid in the reaction. Reaction by-products are removed by means of an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion width, resulting in an increase in the number of usable die on a wafer.

Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and optical system to direct a beam of radiation onto a rotating substrate supported by a chuck, in atmosphere. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate in a single process step. Reaction by-products are removed by means of an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion width, resulting in an increase in the number of usable die on a wafer.

Abstract: The disclosed apparatus and method provides substrate impurity doping wherein a laser rapidly scans a substrate while simultaneously a uniform laminar flow of reactive gas is injected, the interaction of the laser radiation and the dopant results in a uniform diffusion of the dopant species in all planes (X,Y,Z) of the substrate. Laser energy density, wavelength, and pulse geometry are adjustable, in a simple system for volume manufacturing, to provide depth and dose control of the dopant. The system optics can be focused to form a high resolution laser beam to directly write the doping area pattern geometry. Alternatively the laser beam can be optically expanded to form a large diameter beam for large area diffusion of the dopant through a patterned mask.

Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and optical system to direct a beam of radiation onto a rotating substrate supported by a chuck, in atmosphere. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate. An optional gas injector system directs gas onto the substrate edge to aid in the reaction. Process by-products are removed via an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion zone, resulting in an increase in the number of usable die on a wafer.

Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and optical system to direct a beam of radiation onto a rotating substrate supported by a chuck, in atmosphere. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate in a single process step. Reaction by-products are removed by means of an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion width, resulting in an increase in the number of usable die on a wafer.

Abstract: A modular wafer edge processing apparatus is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The modular apparatus can be integrated into wafer tracks, cluster tools, and other volume manufacturing systems. The edge processing apparatus of this invention includes a laser that can either be contained inside the module, or mounted externally to feed multiple modules and thereby reduce system cost. The apparatus contains a beam delivery subsystem to direct a beam of radiation onto the edges of a rotating substrate supported by a chuck. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles, in atmosphere, from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate in a single process step. Reaction by-products are removed by means of an exhaust tube enveloping the reaction site.

Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and fiber-optic system to direct laser radiation onto a rotating substrate supported by a chuck. A laser beam is transmitted into a bundle of optical fibers, and the fibers accurately and precisely direct the beam to remove or transform organic or inorganic films, film stacks, residues, or particles, in atmosphere, from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate in a single process step. Reaction by-products are removed by means of an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion width, resulting in an increase in the number of usable die on a wafer.

Abstract: A method and apparatus for processing substrate edges is disclosed that overcomes the limitations of conventional edge processing methods and systems used in semiconductor manufacturing. The edge processing method and apparatus of this invention includes a laser and optical system to direct a beam of radiation onto a rotating substrate supported by a chuck. The optical system accurately and precisely directs the beam to remove or transform organic or inorganic films, film stacks, residues, or particles, in atmosphere, from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate in a single process step. An optional gas injector system directs gas onto the substrate edge to aid in the reaction. Reaction by-products are removed by means of an exhaust tube enveloping the reaction site. This invention permits precise control of an edge exclusion width, resulting in an increase in the number of usable die on a wafer.

Abstract: A method for removing ion implanted photoresist from a surface of a substrate is provided. The method may include introducing a gas to a reaction chamber containing the substrate; illuminating the ion implanted photoresist with radiation from a laser in the presence of the gas; and scanning the radiation across the surface in the presence of the gas to photoreactively remove the ion implanted photoresist from the surface.

Abstract: A compact optical system is provided for delivering laser radiation with high optical efficiency and uniformity. The optical system includes, in order of the propagation of light, an expander for producing a collimated beam, a beam shaper including a flat window with a diffraction pattern on one side for transforming the collimated beam into a square top-hat output beam, a corrector for bending the square top-hat output beam back to a system axis, a scan head to scan the square top-hat output beam across the substrate, and a scan lens to image the beam at the substrate plane.

Abstract: A compact optical system is provided for delivering laser radiation with high optical efficiency and uniformity. The optical system includes, in order of the propagation of light, a refractive beam expander to adjust beam size and energy density, a beam flattening module to increase throughput and beam uniformity, an anamorphic corrector to equalize ray distribution in both axes, an attenuator assembly to adjust beam intensity, galvanometer mirrors to scan the beam across a substrate surface, and a focusing lens containing a plurality of refractive elements to deliver the beam at the substrate plane. The laser optical system shapes the laser source beam to increase its effective width for greater productivity in manufacturing, and reduces peak intensity to minimize substrate damage. The laser optical system design is optimized for maximum transmission and optical efficiency for low cost operation with a small laser.

Abstract: A scanning plasma reactor for exciting reactant gases at a substrate surface including a beam forming module, a gas injection module, a reaction chamber with a window and a vacuum chuck, a gas exhaust module. Radiation from the beam forming module and the reactant gas create an excited plasma zone. The excited plasma zone is translated across the substrate like a windshield wiper blade, or the substrate is conveyed under a fixed gas reaction zone.

Abstract: A radiation applicator system is structured to be mounted to a radiation source for providing a predefined dose of radiation for treating a localized area or volume, such as the tissue surrounding the site of an excised tumor. The applicator system includes an applicator and an adapter. The adapter is formed for fixedly securing the applicator to a radiation source, such as a radiosurgery system which produces a predefined radiation dose profile with respect to a predefined location along the radiation producing probe. The applicator includes a shank and an applicator head, wherein the head is located at a distal end of the applicator shank. A proximate end of the applicator shank couples to the adapter. A distal end of the shank includes the applicator head, which is adapted for engaging and/or supporting the area or volume to be treated with a predefined does of radiation.

Abstract: A radiation applicator system is structured to be mounted to a radiation source for producing a predefined dose of radiation for treating a localized volume of tissue, such as the tissue surrounding the site of an excised tumor. The applicator system includes an applicator and, in some embodiments, an adapter. The adapter is formed for fixedly securing the applicator to a radiation source, such as the x-ray source of a radiosurgery system which produces a predefined radiation dose profile with respect to a predefined location along its radiation producing probe. The applicator includes a shank and an applicator head, wherein the head is located at a distal end of the applicator shank. A proximate end of the applicator shank couples to the adapter. A distal end of the shank includes the applicator head, which defines a concave treatment surface for engaging and, preferably, supporting the area to be treated with a predefined does of radiation.

Abstract: A scanning plasma reactor for exciting reactant gases at a substrate surface including a beam forming module, a gas injection module, a reaction chamber with a window and a vacuum chuck, a gas exhaust module. Radiation from the beam forming module and the reactant gas create an excited plasma zone. The excited plasma zone is translated across the substrate like a windshield wiper blade, or the substrate is conveyed under a fixed gas reaction zone.

Abstract: A support system for a radiation treatment system includes a rotatable extension arm extending from a vertical shaft and a rotatable counterbalance extending diametrically opposed to the extension arm from the vertical shaft. The vertical shaft is rotatably supported by a support base. The support base may include a damping mechanism to damp the rotational motion of the vertical shaft relative to the support base, wherein the damping force is preferably proportional to the velocity of the vertical shaft. The radiation treatment system is suspended from a cable extending from a distal end of the extension arm. The extension arm can be formed from a first arm extending from the vertical shaft and a second arm rotatably coupled to the first arm in order to permit the radiation treatment system to be moved in horizontal direction. The cable supporting the radiation treatment system can be coupled to a vertical counterbalance weight to allow the vertical position of the radiation treatment system to be adjusted.

Abstract: A radiation applicator system is structured to be mounted to a radiation source for producing a beam of radiation for treating a localized volume of tissue, such as growing blood vessels in the eye that can cause macular degeneration. The applicator system includes an applicator and, in some embodiments, an adapter. The adapter is formed for fixedly securing the applicator to a radiation source, such as a radiosurgery system which produces a predefined radiation dose profile with respect to a predefined location along the radiation producing probe. The applicator includes a shank and an applicator head. A proximate end of the applicator shank couples to the adapter. A distal end of the shank includes the applicator head, which is adapted to produce a beam of radiation. The applicator head includes a radiation shield and a beam collimator. The radiation shield selectively blocks the emitted radiation so that the applicator can be held by a surgeon during treatment.

Abstract: A radiation applicator system is structured to be mounted to a radiation source for providing a predefined dose of radiation for treating a localized volume of tissue, such as the tissue surrounding the site of an excised tumor. The applicator system includes an applicator and, in some embodiments, an adapter. The adapter is formed for fixedly securing the applicator to a radiation source, such as a radiosurgery system which produces a predefined radiation dose profile with respect to a predefined location along its radiation producing probe. The applicator includes a shank and an end cap, wherein the end cap includes a substantially flat or convex treatment surface and is located at a distal end of the applicator shank. A proximate end of the applicator shank couples to the adapter. A distal end of the shank includes the end cap, which is adapted for engaging and preferably supporting the area to be treated with a predefined does of radiation.