Patents by Inventor Kenneth S. Collins

Kenneth S. Collins has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200035454
    Abstract: A method of etching uses an overhead electron beam source that generates an ion-ion plasma for performing an atomic layer etch process.
    Type: Application
    Filed: October 7, 2019
    Publication date: January 30, 2020
    Inventors: Kenneth S. Collins, Kartik Ramaswamy, James D. Carducci, Shahid Rauf, Leonid Dorf, Yang Yang
  • Patent number: 10546728
    Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: January 28, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: James D. Carducci, Hamid Tavassoli, Ajit Balakrishna, Zhigang Chen, Andrew Nguyen, Douglas A. Buchberger, Jr., Kartik Ramaswamy, Shahid Rauf, Kenneth S. Collins
  • Patent number: 10544505
    Abstract: A method of performing deposition of diamond-like carbon on a workpiece in a chamber includes supporting the workpiece in the chamber facing an upper electrode suspended from a ceiling of the chamber, introducing a hydrocarbon gas into the chamber, and applying first RF power at a first frequency to the upper electrode that generates a plasma in the chamber and produces a deposition of diamond-like carbon on the workpiece. Applying the RF power generates an electron beam from the upper electrode toward the workpiece to enhance ionization of the hydrocarbon gas.
    Type: Grant
    Filed: September 27, 2017
    Date of Patent: January 28, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Yang Yang, Kartik Ramaswamy, Kenneth S. Collins, Steven Lane, Gonzalo Antonio Monroy, Lucy Chen, Yue Guo
  • Patent number: 10535502
    Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: January 14, 2020
    Assignee: Applied Materials, Inc.
    Inventors: James D. Carducci, Hamid Tavassoli, Ajit Balakrishna, Zhigang Chen, Andrew Nguyen, Douglas A. Buchberger, Jr., Kartik Ramaswamy, Shahid Rauf, Kenneth S. Collins
  • Publication number: 20200006036
    Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam etching process. In one embodiment, a method of etching a substrate includes delivering a process gas to a process volume of a process chamber, applying a RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume, generating a plasma comprising ions in the process volume, bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam, applying a negative DC power to the electrode, accelerating electrons emitted from the bombarded electrode toward a substrate disposed in the process chamber, and etching the substrate with the accelerated ions.
    Type: Application
    Filed: April 22, 2019
    Publication date: January 2, 2020
    Inventors: Yue GUO, Yang YANG, Kartik RAMASWAMY, Kenneth S. COLLINS, Steven LANE, Gonzalo MONROY, Lucy Zhiping CHEN
  • Publication number: 20190393053
    Abstract: Embodiments described herein relate to apparatus for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, an electrode is movably disposed within a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to a pedestal opposing the electrode. In another embodiment, a pedestal is movably disposed with a process volume of a process chamber and capable of being positioned at a non-parallel angle relative to an electrode opposing the pedestal. Electrons emitted from the electrode are accelerated toward a substrate disposed on the pedestal to induce etching of the substrate.
    Type: Application
    Filed: June 14, 2019
    Publication date: December 26, 2019
    Inventors: Yang YANG, Kartik RAMASWAMY, Kenneth S. COLLINS, Steven LANE, Gonzalo MONROY, Lucy Zhiping CHEN, Yue GUO
  • Patent number: 10510515
    Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor, a pump coupled to the plasma chamber, a workpiece support to hold a workpiece, an intra-chamber electrode assembly comprising a plurality of filaments extending laterally through the plasma chamber, each filament including a conductor surrounded by a cylindrical insulating shell, the plurality of filaments including a first multiplicity of filaments and a second multiplicity of filaments arranged in an alternating pattern with the first multiplicity of filaments, a first bus coupled to the first multiplicity of filaments and a second bus coupled to the second multiplicity of filaments, an RF power source to apply RF signal the intra-chamber electrode assembly, and at least one RF switch configured to controllably electrically couple and decouple the first bus from one of i) ground, ii) the RF power source, or iii) the second bus.
    Type: Grant
    Filed: June 21, 2018
    Date of Patent: December 17, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Kenneth S. Collins, Kartik Ramaswamy, Shahid Rauf, Kallol Bera, James D. Carducci, Michael R. Rice, Yue Guo
  • Patent number: 10475626
    Abstract: A reactor with an overhead electron beam source is capable of generating an ion-ion plasma for performing an atomic layer etch process.
    Type: Grant
    Filed: March 17, 2015
    Date of Patent: November 12, 2019
    Assignee: Applied Materials, Inc.
    Inventors: Kenneth S. Collins, Kartik Ramaswamy, James D. Carducci, Shahid Rauf, Leonid Dorf, Yang Yang
  • Publication number: 20190330748
    Abstract: A gas distribution hub for a plasma reactor chamber has a nozzle includes an inner gas injection passage and an outer gas injection passage, each open to a bottom surface of the hub. For each of the inner and outer gas injection passages, multiple radial elevated feed lines have input ends at a periphery of the hub to receive gas and output ends overlying the respective gas injection passage. Respective axial drop lines connect the respective output ends of the radial elevated feed lines to the respective gas injection passages.
    Type: Application
    Filed: July 8, 2019
    Publication date: October 31, 2019
    Inventors: Andrew Nguyen, Kenneth S. Collins, Kartik Ramaswamy
  • Patent number: 10453656
    Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: October 22, 2019
    Assignee: Applied Materials, Inc.
    Inventors: James D. Carducci, Hamid Tavassoli, Ajit Balakrishna, Zhigang Chen, Andrew Nguyen, Douglas A. Buchberger, Jr., Kartik Ramaswamy, Shahid Rauf, Kenneth S. Collins
  • Publication number: 20190287765
    Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.
    Type: Application
    Filed: June 6, 2019
    Publication date: September 19, 2019
    Inventors: Kenneth S. COLLINS, Michael R. RICE, Kartik RAMASWAMY, James D. CARDUCCI, Yue GUO, Olga REGELMAN
  • Patent number: 10418225
    Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: September 17, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kenneth S. Collins, Michael R. Rice, Kartik Ramaswamy, James D. Carducci, Yue Guo, Olga Regelman
  • Publication number: 20190274415
    Abstract: Holstering retractor devices or systems for securing a device or instrument when not in use, such that the instrument does not have to be held or slid into a pocket. The systems are coupled with a retracting device, integrated into the holster, such that if said instrument or device pops out of holster, or is dropped while in use, it is not lost or damaged. The present invention is also directed to systems utilizing the holster retractors, such as vest system having the holster retractor mounted to the vests.
    Type: Application
    Filed: May 27, 2019
    Publication date: September 12, 2019
    Inventors: JOHN A. SALENTINE, KENNETH S. COLLIN, JR.
  • Patent number: 10373807
    Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.
    Type: Grant
    Filed: August 21, 2018
    Date of Patent: August 6, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kenneth S. Collins, Michael R. Rice, Kartik Ramaswamy, James D. Carducci, Yue Guo, Olga Regelman
  • Publication number: 20190228970
    Abstract: Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.
    Type: Application
    Filed: April 1, 2019
    Publication date: July 25, 2019
    Inventors: Yang YANG, Lucy CHEN, Jie ZHOU, Kartik RAMASWAMY, Kenneth S. COLLINS, Srinivas D. NEMANI, Chentsau YING, Jingjing LIU, Steven LANE, Gonzalo MONROY, James D. CARDUCCI
  • Publication number: 20190221437
    Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, methods for etching a substrate include generating a plasma and bombarding an electrode with ions from the plasma to cause the electrode to emit electrons. The electrons are accelerated toward a substrate to induce etching of the substrate.
    Type: Application
    Filed: January 3, 2019
    Publication date: July 18, 2019
    Inventors: Yang YANG, Kartik RAMASWAMY, Kenneth S. COLLINS, Steven LANE, Gonzalo MONROY, Lucy Zhiping CHEN, Yue GUO
  • Patent number: 10312056
    Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.
    Type: Grant
    Filed: August 9, 2018
    Date of Patent: June 4, 2019
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Kenneth S. Collins, Michael R. Rice, Kartik Ramaswamy, James D. Carducci, Yue Guo, Olga Regelman
  • Patent number: 10299572
    Abstract: Holstering retractor devices or systems for securing a device or instrument when not in use, such that the instrument does not have to be held or slid into a pocket. The systems are coupled with a retracting device, integrated into the holster, such that if said instrument or device pops out of holster, or is dropped while in use, it is not lost or damaged. The present invention is also directed to systems utilizing the holster retractors, such as vest system having the holster retractor mounted to the vests.
    Type: Grant
    Filed: January 15, 2013
    Date of Patent: May 28, 2019
    Assignee: HAMMERHEAD INDUSTRIES, INC.
    Inventors: John A Salentine, Kenneth S Collin, Jr.
  • Publication number: 20190157113
    Abstract: Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.
    Type: Application
    Filed: January 18, 2019
    Publication date: May 23, 2019
    Inventors: Jennifer Y. Sun, Ren-Guan Duan, Jie Yuan, Li Xu, Kenneth S. Collins
  • Publication number: 20190157114
    Abstract: Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.
    Type: Application
    Filed: January 18, 2019
    Publication date: May 23, 2019
    Inventors: Jennifer Y. Sun, Ren-Guan Duan, Jie Yuan, Li Xu, Kenneth S. Collins