Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

Abstract: Embodiments disclosed herein include a plasma treatment chamber, comprising one or more sidewalls. A support surface within the one or more sidewalls holds a workpiece. A first gas injector along the one or more sidewalls injects a first gas flow in a first direction generally parallel to and across a surface of the workpiece. A first pump port along the one or more sidewalls generally opposite of the first gas injector pumps out the first gas flow. A second gas injector along the one or more sidewalls injects a second gas flow in a second direction generally parallel to and across the surface of the workpiece. A second pump port along the one or more sidewalls generally opposite of the second gas injector pumps out the second gas flow. The first and second gas flows comprise a process gas mixture and/or an independent gas injection (IGI) mixture.

Abstract: Embodiments disclosed herein include a plasma treatment chamber, comprising one or more sidewalls. A support surface within the one or more sidewalls holds a workpiece. A first gas injector along the one or more sidewalls injects a first gas flow in a first direction generally parallel to and across a surface of the workpiece. A first pump port along the one or more sidewalls generally opposite of the first gas injector pumps out the first gas flow. A second gas injector along the one or more sidewalls injects a second gas flow in a second direction generally parallel to and across the surface of the workpiece. A second pump port along the one or more sidewalls generally opposite of the second gas injector pumps out the second gas flow.

Abstract: Holstering retractor devices or systems for securing a device or instrument when not in use, such that the instrument does not have to be held or slid into a pocket. The systems are coupled with a retracting device, integrated into the holster, such that if said instrument or device pops out of holster, or is dropped while in use, it is not lost or damaged. The present invention is also directed to systems utilizing the holster retractors, such as vest system having the holster retractor mounted to the vests.

Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.

Abstract: A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distributor to deliver a processing gas to the plasma chamber, a workpiece support to hold a workpiece, an electrode assembly comprising a plurality of conductors spaced apart from and extending laterally across the workpiece support in a parallel coplanar array, a first RF power source to supply a first RF power to the electrode assembly, and a dielectric bottom plate between the electrode assembly and the workpiece support, the dielectric bottom plate providing an RF window between the electrode assembly and the plasma chamber.

Abstract: Holstering retractor devices or systems for securing a device or instrument when not in use, such that the instrument does not have to be held or slid into a pocket. The systems are coupled with a retracting device, integrated into the holster, such that if said instrument or device pops out of holster, or is dropped while in use, it is not lost or damaged. The present invention is also directed to systems utilizing the holster retractors, such as vest system having the holster retractor mounted to the vests.

Abstract: A method of etching uses an overhead electron beam source that generates an ion-ion plasma for performing an atomic layer etch process.

Abstract: Connector and retractor systems are disclosed with some embodiments comprising a retractor housing and a line within the retractor housing. The housing also has a hole from which the line extends, and a spring within the retractor housing which urges retraction of the line. A personal article can be attached to the line. A connector is included between the retractor housing and the personal article, with the connector having magnets to cause alignment of the personal article with the retractor housing when the personal article is retracted to the housing.

Abstract: The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.

Abstract: A method of forming a transparent carbon layer on a substrate is provided. The method comprises generating an electron beam plasma above a surface of a substrate positioned over a first electrode and disposed in a processing chamber having a second electrode positioned above the first electrode. The method further comprises flowing a hydrocarbon-containing gas mixture into the processing chamber, wherein the second electrode has a surface containing a secondary electron emission material selected from a silicon-containing material and a carbon-containing material. The method further comprises applying a first RF power to at least one of the first electrode and the second electrode and forming a transparent carbon layer on the surface of the substrate.

Abstract: A gas distribution plate assembly for a processing chamber is provided that in one embodiment includes a body made of a metallic material, a base plate comprising a silicon infiltrated metal matrix composite coupled to the body, and a perforated faceplate comprising a silicon disk coupled to the base plate by a bond layer.

Abstract: Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.

Abstract: Retractors and vests having the retractors are disclosed, wherein the retractor can be attached by an attachment mechanism to a web system on the vest. An accessory can be attached to a line within the retractor, and the user can extend the line from the retractor housing when the accessory is in use. When the line is extended from the housing, the retractor housing rotates so it is in alignment with the extended line. This alignment of the housing and line significantly reduces the stresses on the line, which in turn extends the reliability and lifespan of the retractor. Further, the line can be under a retraction force that retracts the line back into the retractor housing when the extension force is released. The retraction force can be strong enough to prevent the line from extending from under weight of the accessory. The retractor can also minimize the dangle length of the retracting device to the attachment point to minimize movement when not in use.

Abstract: Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.

Abstract: Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.

Abstract: Disclosed herein is a ceramic article or coating useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic article or coating is formed from a combination of yttrium oxide and zirconium oxide.

Abstract: A plasma reactor has an overhead inductively coupled plasma source with two coil antennas and symmetric and radial RF feeds and cylindrical RF shielding around the symmetric and radial RF feeds. The radial RF feeds are symmetrically fed to the plasma source.

Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam etching process. In one embodiment, a method of etching a substrate includes delivering a process gas to a process volume of a process chamber, applying a RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume, generating a plasma comprising ions in the process volume, bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam, applying a negative DC power to the electrode, accelerating electrons emitted from the bombarded electrode toward a substrate disposed in the process chamber, and etching the substrate with the accelerated ions.

Abstract: An external magnetic filter to trap electrons surrounds a reactor chamber and has multiple magnets arranged in a circle, the magnetic orientation of each individual magnet being rotated relative to the orientation of the adjacent individual magnet by a difference angle that is a function of the arc subtended by the individual magnet.