Abstract: A 3D microelectronic structure is provided which includes a substrate having at least one opening present therein, the at least one opening having sidewalls which extend to a common bottom wall; and a thermal nitride layer present on at least an upper portion of each sidewall of openings. A method for fabricating the above-mentioned 3D microelectronic structure is also provided. Specifically, the method includes a step of selectively forming a thermal nitride layer on at least an upper portion of each sidewall of an opening formed in a substrate.

Abstract: Disclosed is a method of removing liquid from a surface of a semiconductor wafer that comprises the steps of providing a plurality of capillary channels, each said capillary channel having a first opening and a second opening, and then placing said first openings in contact with the liquid in a manner effective in drawing away the liquid by capillary action.

Abstract: Methods forming a trench region of a trench capacitor structure having increase surface area are provided. One method includes the steps of forming a discontinuous polysilicon layer on exposed walls of a lower trench region, the discontinuous polysilicon layer having gaps therein which expose portions of said substrate; oxidizing the lower trench region such that the exposed portions of said substrate provided by the gaps in the discontinuous polysilicon layer are oxidized into oxide material which forms a smooth and wavy layer with the discontinuous polysilicon layer; and etching said oxide material so as to form smooth hemispherical grooves on the walls of the trench region.

Abstract: A method of removing water from the surface of a silicon wafer or other substrate subjected to wet processing which includes a step of water rinsing. In this method a silicon wafer whose surface includes liquid water is disposed in an atmosphere saturated with water vapor. The water vapor is removed from the surface of the silicon wafer by a stream of water-saturated gas. Upon removal of liquid water from the surface of the silicon wafer the water vapor in the water vapor saturated atmosphere is removed by evaporation.

Abstract: A method of removing water from the surface of a silicon wafer or other substrate subjected to wet processing which includes a step of water rinsing. In this method a silicon wafer whose surface includes liquid water is disposed in an atmosphere saturated with water vapor. The water vapor is removed from the surface of the silicon wafer by a stream of water-saturated gas. Upon removal of liquid water from the surface of the silicon wafer the water vapor in the water vapor saturated atmosphere is removed by evaporation.