Abstract: A silicon carbide semiconductor device having a MOS structure includes: a substrate; a channel area in the substrate; a first impurity area; a second impurity area; a gate insulating film on the channel area; and a gate on the gate insulating film. The channel area provides an electric current path. The channel area and the gate insulating film have an interface therebetween. The interface includes a dangling bond, which is terminated by a hydrogen atom or a hydroxyl. The interface has a hydrogen concentration equal to or larger than 2.6×1020 cm?3.

Abstract: A silicon carbide semiconductor device includes a substrate, a drift layer located on a first surface of the substrate, a base region located on the drift layer, a source region located on the base region, a trench sandwiched by each of the base region to the drift layer, a channel layer located in the trench, a gate insulating layer located on the channel layer, a gate electrode located on the gate insulating layer, a source electrode electrically coupled with the source region and the base region, a drain electrode located on a second surface of the substrate, and a deep layer located under the base region and extending to a depth deeper than the trench. The deep layer is formed into a lattice pattern.

Abstract: A computer apparatus includes an equipment-information holding unit which holds equipment information which contains setting information of equipment of the computer apparatus and license information for using the equipment. An image-data generating unit generates image data for printing the equipment information on a sheet in a predetermined form. An equipment-information setting unit stores the equipment information into the equipment-information holding unit based on image data read from the printed sheet on which the equipment information is printed.

Abstract: A light emitting device including a III-V group compound semiconductor includes a first stacked body and a second stacked body. The first stacked body includes a III-V group compound semiconductor stacked body, and a reflection layer, a first diffusion suppressing layer and a first metal layer formed on one main surface of the III-V group compound semiconductor stacked body. The second stacked body includes a semiconductor substrate and a second metal layer. The first stacked body and the second stacked body are joined by the first metal layer and the second metal layer, and by the first diffusion suppressing layer, diffusion of atoms between the reflection layer and the first metal layer is suppressed. Therefore, a III-V group compound semiconductor device having high efficiency of light emission to the outside per chip and manufacturing method thereof can be provided.

Abstract: A direction of a dislocation line of a threading dislocation is aligned, and an angle between the direction of the dislocation line of the threading dislocation and a [0001]-orientation c-axis is equal to or smaller than 22.5 degrees. The threading dislocation having the dislocation line along with the [0001]-orientation c-axis is perpendicular to a direction of a dislocation line of a basal plane dislocation. Accordingly, the dislocation does not provide an extended dislocation on the c-face, so that a stacking fault is not generated. Thus, when an electric device is formed in a SiC single crystal substrate having the direction of the dislocation line of the threading dislocation, which is the [0001]-orientation c-axis, a SiC semiconductor device is obtained such that device characteristics are excellent without deterioration, and a manufacturing yield ration is improved.

Abstract: When a number of document data registered in one of full-text index-for-registration/deletion storage parts reaches a predetermined number, or when a capacity of the full-text index-for-registration/deletion storage part reaches a predetermined capacity, a merge processing is performed for merging data from the full-text index-for-registration/deletion storage part to a full-text index-for-search storage part. While this merge processing is performed, a registration/deletion processing is performed by using another full-text index-for-registration/deletion storage part.

Abstract: A semiconductor device includes: a first semiconductor layer; a second semiconductor layer on the first semiconductor layer; a third semiconductor layer on the second semiconductor layer; a fourth semiconductor layer in a part of the third semiconductor layer; a trench penetrating the fourth semiconductor layer and the third semiconductor layer and reaching the second semiconductor layer; a gate insulation film on an inner wall of the trench; a gate electrode on the gate insulation film in the trench; a first electrode; and a second electrode. The trench includes a bottom with a curved surface having a curvature radius equal to or smaller than 0.5 ?m.

Abstract: A document managing system is provided with a plurality of document managing apparatuses each configured to retrieve a document stored in a storage according to a document ID and to judge whether or not an operation with respect to the retrieved document is possible according to a user ID that is generated with respect to each document managing apparatus, and a user ID generating apparatus provided externally to the document managing apparatuses and configured to generate a common user ID that is used in common among each of the document managing apparatuses. Each document managing apparatus has an export and import part configured to export and import data of an arbitrary document and an access control list (ACL).

Abstract: A SiC semiconductor device includes: a substrate; a drift layer on a first side of the substrate; a trench in the drift layer; a base region contacting a sidewall of the trench; a source region in an upper portion of the base region; a gate electrode in the trench via a gate insulation film; a source electrode on the source region; and a drain electrode on a second side of the substrate. The source region has multi-layered structure including a first layer and a second layer. The first layer as an upper layer contacts the source electrode with ohmic contact. The second layer as a lower layer has an impurity concentration, which is lower than an impurity concentration of the first layer.

Abstract: When a number of document data registered in one of full-text index-for-registration/deletion storage parts reaches a predetermined number, or when a capacity of the full-text index-for-registration/deletion storage part reaches a predetermined capacity, a merge processing is performed for merging data from the full-text index-for-registration/deletion storage part to a full-text index-for-search storage part. While this merge processing is performed, a registration/deletion processing is performed by using another full-text index-for-registration/deletion storage part.

Abstract: A silicon carbide semiconductor device includes a substrate, a drift layer located on a first surface of the substrate, a base region located on the drift layer, a source region located on the base region, a trench sandwiched by each of the base region to the drift layer, a channel layer located in the trench, a gate insulating layer located on the channel layer, a gate electrode located on the gate insulating layer, a source electrode electrically coupled with the source region and the base region, a drain electrode located on a second surface of the substrate, and a deep layer located under the base region and extending to a depth deeper than the trench. The deep layer is formed into a lattice pattern.

Abstract: A computer-readable recording medium is disclosed that stores a workflow function addition program for causing a computer to execute a method including the steps of (a) displaying a list of work items on a screen related to an e-mail program and (b) changing the display state of the list displayed in step (a).

Abstract: In an internal combustion engine variable compression ratio system, a compression ratio of an internal combustion engine is changed over between a high compression ratio and a low compression ratio with a changeover threshold value corresponding to a predetermined operational condition of the internal combustion engine being a boundary. When the internal combustion engine enters a slow acceleration state or a slow deceleration state, a changeover is performed first and then the state is maintained for a predetermined period by prohibiting re-changeover. Therefore, changeover hunting can be prevented in the system while maintaining an appropriate compression ratio in conformity with traveling characteristics demanded by a driver, when the internal combustion engine in a state of slow acceleration or slow deceleration.

Abstract: A trench gate type IGBT includes: a first semiconductor layer; a second semiconductor on the first semiconductor layer; a third semiconductor on the second semiconductor layer; trenches for separating the third semiconductor layer into first regions and second regions; a gate insulation film on an inner wall of each trench; a gate electrode on the gate insulation film; a fourth semiconductor layer in a surface portion of each first region and contacting each trench; a first electrode connecting to the first region and the fourth semiconductor layer; and a second electrode connecting to the first semiconductor layer. The first regions and the second regions are alternately arranged. Two second regions are continuously connected together to be integrated into one body.

Abstract: A silicon carbide semiconductor device having a MOS structure includes: a substrate; a channel area in the substrate; a first impurity area; a second impurity area; a gate insulating film on the channel area; and a gate on the gate insulating film. The channel area provides an electric current path. The channel area and the gate insulating film have an interface therebetween. The interface includes a dangling bond, which is terminated by a hydrogen atom or a hydroxyl. The interface has a hydrogen concentration equal to or larger than 2.6×1020 cm?3.

Abstract: In an internal combustion engine variable compression ratio system, a compression ratio of an internal combustion engine is changed over between a high compression ratio and a low compression ratio with a changeover threshold value corresponding to a predetermined operational condition of the internal combustion engine being a boundary. When the internal combustion engine enters a slow acceleration state or a slow deceleration state, a changeover is performed first and then the state is maintained for a predetermined period by prohibiting re-changeover. Therefore, changeover hunting can be prevented in the system while maintaining an appropriate compression ratio in conformity with traveling characteristics demanded by a driver, when the internal combustion engine in a state of slow acceleration or slow deceleration.

Abstract: A computer apparatus includes an equipment-information holding unit which holds equipment information which contains setting information of equipment of the computer apparatus and license information for using the equipment. An image-data generating unit generates image data for printing the equipment information on a sheet in a predetermined form. An equipment-information setting unit stores the equipment information into the equipment-information holding unit based on image data read from the printed sheet on which the equipment information is printed.

Abstract: When a number of document data registered in one of full-text index-for-registration/deletion storage parts reaches a predetermined number, or when a capacity of the full-text index-for-registration/deletion storage part reaches a predetermined capacity, a merge processing is performed for merging data from the full-text index-for-registration/deletion storage part to a full-text index-for-search storage part. While this merge processing is performed, a registration/deletion processing is performed by using another full-text index-for-registration/deletion storage part.

Abstract: When a number of document data registered in one of full-text index-for-registration/deletion storage parts reaches a predetermined number, or when a capacity of the full-text index-for-registration/deletion storage part reaches a predetermined capacity, a merge processing is performed for merging data from the full-text index-for-registration/deletion storage part to a full-text index-for-search storage part. While this merge processing is performed, a registration/deletion processing is performed by using another full-text index-for-registration/deletion storage part.

Abstract: An authentication ticket processing apparatus includes a temporary data storage unit configured to keep user information upon receiving the user information from a user management database for managing user information, the temporary data storage unit allowing access thereto to be performed at higher speed than access to the user management database. The authentication ticket processing apparatus is configured such that, when there is a need to acquire user information in response to a decoding request from a server, a check is made whether user information corresponding to the decoding request is present in the temporary data storage unit, and the corresponding user information is acquired from the temporary data storage unit if the corresponding user information is present in the temporary data storage unit.