Abstract: A touchscreen panel according to an embodiment of the present invention includes a transparent substrate (101); a first electrically conductive layer (12) supported on the transparent substrate, the first electrically conductive layer including a plurality of sensing electrodes (12S) extending along a first direction; and a second electrically conductive layer (14) including a plurality of driving electrodes (14D) extending along a second direction intersecting the first direction, the plurality of driving electrodes being electrically insulated from the plurality of sensing electrodes. The plurality of sensing electrodes and the plurality of driving electrodes define a sensor array region (10A), the sensor array region including a plurality of sensor portions (10S) arranged in a matrix array. The first electrically conductive layer further includes a plurality of lead lines (12Dt) extending essentially in parallel to the first direction within the sensor array region.

Abstract: A display device with a touch sensor (100) according to an embodiment of the present invention includes: a pixel substrate (20) including a plurality of pixel electrodes (2); a counter substrate (10) opposing the pixel substrate (20); a black matrix (8) extending in a first direction and in a second direction different from the first direction; and a touch sensor electrode (6) extending in the first direction.

Abstract: A crystal display device 10 includes TFTs, pixel electrodes, common electrodes, an array board, a CF board, detection electrodes, drive electrodes , a driver, a row control circuit, and a touch controller. The detection electrodes are included in the CF board. The drive electrodes are included in the CF board. The driver and the row control circuit are included in a display driver portion for supplying scan signals and data signals to the TFTs for display driving. The touch controller supplies drive signals to the drive electrodes and detects position detection signals output by the detection electrodes to perform position detection control. The touch controller supplies the drive signals to the drive electrodes to drive the drive electrodes in a scan writing period in which the scan signals are supplied to the TFTs by at least the row control circuit in the display driver portion to drive the TFTs.

Abstract: A touchscreen pattern includes detection electrodes, drive electrodes, floating electrodes, and wide detection electrodes. The detection electrodes extend along a first direction and are arranged along a second direction perpendicular to the first direction. The drive electrodes extend along the second direction and are arranged along the first direction to overlap the detection electrodes in a plan view. The drive electrodes and the detection electrodes form capacitors. The floating electrodes are arranged adjacent to the detection electrodes 38, respectively, in the plan view and to overlap the drive electrodes in the plan view. The floating electrodes and the adjacent detection electrodes form capacitors. The floating electrodes and the overlapping drive electrodes form capacitors. The wide detection electrodes are arranged at the outermost with respect to the second direction. The wide detection electrodes have a width larger than a width of the detection electrodes closer to the middle.

Abstract: Provided is a sensor-equipped display device (1) that includes: a first substrate (20a); a second substrate (20b) opposed to the first substrate (20a); a liquid crystal layer (LC); a plurality of first lines (15) extending in a first direction in a pixel area (AA); second lines extending in a second direction that is different from the first direction; pixel switching elements that are provided for pixels, respectively, and are connected to the first lines and the second lines; a plurality of sensor electrodes (SE, DL) provided at positions that overlap the pixel area on at least one of the first substrate and the second substrate, for detecting the contact or approach of the object; and a plurality of sensor lead-out lines that are provided in parallel to the first lines or the second lines in the pixel area on the first substrate, and are connected to the sensor electrodes, respectively.

Abstract: A touch panel includes: a first substrate; a second substrate disposed on a viewer side of the first substrate; a liquid crystal layer provided between the first substrate and the second substrate; a plurality of pixel electrodes and a common electrode for applying a voltage to the liquid crystal layer; and a plurality of detection electrodes and a plurality of driving electrodes for a touch sensor. The first substrate includes: a first transparent substrate; and the plurality of pixel electrodes, which are formed on the liquid crystal layer side of the first transparent substrate. The second substrate includes: a second transparent substrate; and the plurality of driving electrodes and the plurality of detection electrodes formed on the liquid crystal layer side of the second transparent substrate. The touch panel does not include a conductive layer on the viewer side of the second transparent substrate.

Abstract: A liquid crystal display device includes: a TFT substrate that includes gate lines; and a driver circuit section that includes a gate driver that is connected to the gate lines. A frame region includes a wiring substrate that sandwiches the gate lines. The wiring substrate includes: a first wiring substrate that has first wiring lines that are connected to the gate lines; a second wiring substrate that has second wiring lines that are connected to the first wiring lines; and a third wiring substrate that is attached to the second wiring substrate and has third wiring lines that are connected to the second wiring lines and a gate driver.

Abstract: A touchscreen panel according to an embodiment of the present invention includes a transparent substrate (101); a first electrically conductive layer (12) supported on the transparent substrate, the first electrically conductive layer including a plurality of sensing electrodes (12S) extending along a first direction; and a second electrically conductive layer (14) including a plurality of driving electrodes (14D) extending along a second direction intersecting the first direction, the plurality of driving electrodes being electrically insulated from the plurality of sensing electrodes. The plurality of sensing electrodes and the plurality of driving electrodes define a sensor array region (10A), the sensor array region including a plurality of sensor portions (10S) arranged in a matrix array. The first electrically conductive layer further includes a plurality of lead lines (12Dt) extending essentially in parallel to the first direction within the sensor array region.

Abstract: A display device with a touch sensor (100) according to an embodiment of the present invention includes: a pixel substrate (20) including a plurality of pixel electrodes (2); a counter substrate (10) opposing the pixel substrate (20); a black matrix (8) extending in a first direction and in a second direction different from the first direction; and a touch sensor electrode (6) extending in the first direction.

Abstract: On a resin substrate (2) there are laminated, in the stated order, a conductive layer in which a bridge electrode (3b) and leads are formed, a first interlayer insulating layer (4), and an electrode layer that allows through visible light forming a unit electrode (5XU) of a drive electrode line (5X) and a unit electrode (5YU) of a sensing electrode line (5Y). It is accordingly possible to realize a touch panel substrate (1) capable of minimizing any increases in thickness, decreases in transmittance, complexity of terminal portions, and deterioration in optical characteristics.

Abstract: A liquid crystal display device includes: a TFT substrate that includes gate lines; and a driver circuit section that includes a gate driver that is connected to the gate lines. A frame region includes a wiring substrate that sandwiches the gate lines. The wiring substrate includes: a first wiring substrate that has first wiring lines that are connected to the gate lines; a second wiring substrate that has second wiring lines that are connected to the first wiring lines; and a third wiring substrate that is attached to the second wiring substrate and has third wiring lines that are connected to the second wiring lines and a gate driver.

Abstract: On a resin substrate (2) there are laminated, in the stated order, a conductive layer in which a bridge electrode (3b) and leads are formed, a first interlayer insulating layer (4), and an electrode layer that allows through visible light forming a unit electrode (5XU) of a drive electrode line (5X) and a unit electrode (5YU) of a sensing electrode line (5Y). It is accordingly possible to realize a touch panel substrate (1) capable of minimizing any increases in thickness, decreases in transmittance, complexity of terminal portions, and deterioration in optical characteristics.

Abstract: This semiconductor device fabricating method includes the steps of: (A) providing a supporting structure (10) in which a first separating layer (3) and a first insulating layer (5) have been stacked in this order on the surface of a supporting base (1); (B) providing a sustaining structure (30); (C) forming a thin-film transistor (M1, M2) on the first insulating layer (5); (D) forming a second insulating layer (20) that covers the thin-film transistor (M1, M2); (E) joining the supporting structure on which the second insulating layer has been formed onto the sustaining structure (30) so that the thin-film transistor (M1, M2) faces the sustaining structure (30) with the second insulating layer (20) interposed, thereby obtaining a joined structure (40); (F) removing the supporting base and at least a part of the first separating layer (3) from the joined structure (40); and (G) forming a pixel electrode (33) on the other side of the joined structure (40), from which the supporting base has already been removed,

Abstract: A plurality of light-shielding films etc. are formed on a surface of a first insulating film. Then, a dummy pattern is formed on a surface of a second insulating film between adjoining ones of the light-shielding films etc., so that a height of the dummy pattern is equal to that of the second insulating film on the light-shielding films etc., as measured from the surface of the first insulating film. Thereafter, a third insulating film covering the dummy pattern and having a flat surface is formed over the surface of the second insulating film. Subsequently, a base layer is bonded to a support substrate so that the flat surface of the third insulating film faces the support substrate. A semiconductor device is manufactured in this manner.

Abstract: A method for producing a semiconductor device includes a step of forming a first insulation film, a step of forming a separation layer in a base layer, a step of forming a light-blocking film on the surface of the first insulation film, a step of forming a second insulation film such that the light-blocking film is covered, a step of affixing the base layer provided with the light-blocking film to a substrate, a step of separating and removing along the separation layer a portion of the base layer affixed to the substrate, and a step of forming a semiconductor layer such that at least a portion thereof overlaps with the light-blocking film.

Abstract: A semiconductor device includes a gate electrode formed on an insulating substrate, a gate insulating film covering the gate electrode, a semiconductor layer formed on a surface of the gate insulating film and having a channel region facing the gate electrode, and an electrode layer connected to the semiconductor layer. An island-shaped interlayer insulating film covering the channel region is formed on a surface of the semiconductor layer. An end portion of the interlayer insulating film is interposed between the semiconductor layer and the electrode layer. Outer edges of the interlayer insulating film are located further inside than respective corresponding outer edges of the semiconductor layer by the same width, as viewed in a normal direction of a surface of the insulating substrate. The electrode layer is connected to an end portion of the semiconductor layer.

Abstract: A semiconductor device (130) includes: a bonding substrate (100); a thin film element (80) formed on the bonding substrate (100); and a semiconductor element (90) bonded to the bonding substrate (100), the semiconductor element (90) including semiconductor element main body (50) and a plurality of underlying layers (51-54) stacked on a side of the semiconductor element main body (50) facing the bonding substrate (100), and each of the underlying layers (51-54) including an insulating layer and a circuit pattern in the insulating layer, wherein an end of the semiconductor element (90) facing the thin film element (80) is provided in a stepped form so that the closer to the bonding substrate the underlying layers arc, the farther ends of the underlying layers facing the thin film element protrude, the end of the semiconductor element (90) is covered with a resin layer (120), and the thin film element (80) is connected to the semiconductor element main body (50) via a connection line (121a) provided on the resin

Abstract: A semiconductor device (130) including: a bonding substrate (100); a thin film element (80) formed on the bonding substrate (100); and a semiconductor element (90a) bonded to the bonding substrate (100), the semiconductor element including a semiconductor element main body (50) and a plurality of underlying layers (51-54) stacked on a side of the semiconductor element main body facing the bonding substrate (100), wherein the underlying layer (54) closest to the bonding substrate (100) includes an extended section (E) formed by extending the circuit pattern toward the thin film element (80), a resin layer (120) is provided between the thin film element (80) and the semiconductor element (90a), and the thin film element (80) is connected to the semiconductor element main body (50) via a connection line (121a) provided on the resin layer (120), the extended section (E), and the circuit patterns.

Abstract: A method of fabricating a semiconductor device of the present invention includes the steps of forming a single crystal semiconductor device, attaching the single crystal semiconductor device on a substrate, forming a TFT on a glass substrate, and electrically connecting the single crystal semiconductor device and the TFT. In the step of forming a single crystal semiconductor device, an alignment mark is provided at the single crystal semiconductor device. In the step of attaching a single crystal semiconductor device, the single crystal semiconductor device is positioned and attached on the glass substrate based on the machining accuracy of an attachment device. In the step of forming a TFT, the TFT is positioned and provided on the glass substrate based on the alignment mark provided at the single crystal semiconductor device.

Abstract: A display device (100a) is provided with a display unit (160), an antenna unit (110) that receives electromagnetic waves from a reader/writer device (200), a communication data processing unit (131a) that acquires communication data transmitted by the electromagnetic waves, a display data processing unit (132a) that generates, from the communication data, the display data to be displayed on the display unit (160) and that stores the display data in a display data storage unit (143), a display control unit (150) that outputs the display data to the display unit (160), a power generation unit (170) that is activated when receiving the electromagnetic waves and that supplies power acquired from the electromagnetic waves at least to the communication data processing unit (131a), the display data processing unit (132a), the display unit (160), the display control unit (150), and to the display data storage unit (143), and a display power source unit (180) that is activated when not receiving the electromagnetic wa