Patents by Inventor Kensuke Amemiya

Kensuke Amemiya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20030048080
    Abstract: To provide an accelerator system having a wide ion beam current control range, being capable of operating with low power consumption and a long maintenance interval and being capable of preventing unnecessarily large does of the ion beam for irradiation from erroneously being supplied to the downstream side of the system.
    Type: Application
    Filed: March 20, 2002
    Publication date: March 13, 2003
    Applicant: Hitachi, Ltd.
    Inventors: Kensuke Amemiya, Kazuo Hiramoto, Masanobu Tanaka, Shigemitsu Hara
  • Publication number: 20030012331
    Abstract: An image pickup apparatus of a radiological imaging apparatus forms a radiation detection portion composed of a plurality of radiation detectors placed around a hole portion formed in a casing. An X-ray source moves along a guide rail in the circumferential direction of the hole portion. The radiation detection portion detects X-rays that have passed through an affected area of an examinee and &ggr;-rays emitted from the affected area and outputs an X-ray detection signal and &ggr;-ray detection signal. A computer creates X-ray computed tomographic image data based on the separated X-ray detection signal and PET image data based on the &ggr;-ray detection signal and fuses both data. The radiation detection portion has the functions of the X-ray detection portion and the &ggr;-ray detection portion, and therefore even when the examinee moves, the radiation detection portion can fuse both the X-ray computed tomographic image data and PET image accurately.
    Type: Application
    Filed: September 12, 2002
    Publication date: January 16, 2003
    Inventors: Shinichi Kojima, Kikuo Umegaki, Takashi Okazaki, Kensuke Amemiya, Hiroshi Kitaguchi, Yuuichirou Ueno, Norihito Yanagita, Kazuma Yokoi
  • Publication number: 20020191734
    Abstract: An image pickup apparatus of a radiological imaging apparatus includes a plurality of radiation detectors arranged in a ring form around a through hole section formed on a casing into which an examinee is inserted. An X-ray source unit having an X-ray source moves in a circumferential direction of the through hole section along a ring-shaped guide rail provided on the casing. Each radiation detector outputs both an X-ray detection signal which is a detection signal of X-rays that have passed through the examinee and a &ggr;-ray detection signal which is a detection signal of &ggr;-rays radiated from the examinee caused by radiopharmaceutical. A computer creates an X-ray computed tomographic image data based on the X-ray detection signal and a PET image data based on the &ggr;-ray detection signal and creates fused tomographic image data using the X-ray computed tomographic image data and the PET image data.
    Type: Application
    Filed: March 18, 2002
    Publication date: December 19, 2002
    Inventors: Shinichi Kojima, Kikuo Umegaki, Takashi Okazaki, Kensuke Amemiya, Hiroshi Kitaguchi, Yuuichirou Ueno
  • Patent number: 6104025
    Abstract: An ion implanting apparatus is capable of preventing occurrence of discharge flaws on a reverse side surface of a silicon wafer when the silicon wafer is ion-implanted at a temperature exceeding 300.degree. C. The ion implanting apparatus has an ion current of 10 mA to 100 mA, and an electron beam generating apparatus for irradiating an electron beam onto the reverse side surface of the silicon wafer. The electron beam is controlled so that current flowing between the wafer and the rotating disk supporting the wafer becomes substantially zero.
    Type: Grant
    Filed: May 19, 1999
    Date of Patent: August 15, 2000
    Assignee: Hitachi, Ltd.
    Inventors: Katsumi Tokiguchi, Takayoshi Seki, Kensuke Amemiya, Yasuo Yamashita, Kazuo Mera, Isao Hashimoto, Keiji Arimatsu
  • Patent number: 5945681
    Abstract: An ion implanting apparatus is capable of preventing occurrence of discharge flaws on a reverse side surface of a silicon wafer when the silicon wafer is ion-implanted at a temperature exceeding 300.degree. C. The ion implanting apparatus has an ion current of 10 mA to 100 mA, and an electron beam generating apparatus for irradiating an electron beam onto the reverse side surface of the silicon wafer. The electron beam is controlled so that current flowing between the wafer and the rotating disk supporting the wafer becomes substantially zero.
    Type: Grant
    Filed: March 27, 1997
    Date of Patent: August 31, 1999
    Assignee: Hitachi, Ltd.
    Inventors: Katsumi Tokiguchi, Takayoshi Seki, Kensuke Amemiya, Yasuo Yamashita, Kazuo Mera, Isao Hashimoto, Keiji Arimatsu
  • Patent number: 5506472
    Abstract: A secondary coil forming a resonant circuit in cooperation with a quadrupole is composed of conductive tubes and cooled by feeding coolant such as pure water into the tubes which serve as coolant passages. This makes it possible to minimize thermal deformation of the secondary coil when a variable-frequency type radio-frequency quadrupole accelerator is driven with a large amount of power. As a result, variation of the resonant frequency of the resonant circuit, resulting from the deformation of the secondary coil, can be minimized. Consequently, a given ion acceleration ability can be provided. When a coolant passage for use in cooling the primary coil is included and coolant such as pure water is fed into the coolant passage, thermal deformation of the primary coil can be minimized. Thus, impedance matching with the resonant circuit can be maintained on a stable basis.
    Type: Grant
    Filed: May 10, 1994
    Date of Patent: April 9, 1996
    Assignee: Hitachi, Ltd.
    Inventors: Junya Ito, Katsumi Tokiguchi, Kensuke Amemiya, Noriyuki Sakudo
  • Patent number: 5349196
    Abstract: An ion implanting apparatus includes a magnetic quadrupole lens disposed between an ion source and an RFQ accelerator. The magnetic quadrupole lens carries out mass spectrometry of an ion beam extracted from the ion source while converging the ion beam, and reduces the divergence of the ion beam due to the space charge effect as compared to an electrostatic quadrupole lens. The use of the magnetic quadrupole lens makes it possible to utilize to a maximum extent the ion beam extracted from the ion source and to restrict to a minimum the reduction in the current of the ion beam during passage of the ion beam, thereby making it possible to generate a high-energy ion beam having a large current on the order of several tens of milliamperes.
    Type: Grant
    Filed: April 7, 1993
    Date of Patent: September 20, 1994
    Assignee: Hitachi, Ltd.
    Inventors: Kensuke Amemiya, Yoshimi Hakamata, Katsumi Tokiguchi, Noriyuki Sakudo
  • Patent number: 5086256
    Abstract: An Mev ion implantation apparatus which does not contaminate a sample substrate with heavy metal particles. The apparatus includes an external resonance circuit type RFQ accelerator incluidng undulated quadrupole electrodes and a separate radio frequency resonance circuit for generating a radio frequency high voltage to be supplied to the electrodes. The undulated quadrupole electrodes and at least a part of metallic supports for supporting the electrodes and voltage supplying lines are provided with a surface coating of silicon, silicon doped with an impurity such as boron, phosphorus, or arsenic, or a light element having a mass number of 28 or less, such as carbon.
    Type: Grant
    Filed: November 20, 1989
    Date of Patent: February 4, 1992
    Assignee: The Agency of Industrial Science and Technology
    Inventors: Katsumi Tokiguchi, Kensuke Amemiya, Noriyuki Sakudo, Takayoshi Seki
  • Patent number: 5053678
    Abstract: A microwave ion source suitable for an apparatus which requires ions of an element of high reactivity such as oxygen, fluorine, etc., the microwave ion source being arranged to transmit microwaves between outer and inner conductors of a coaxial line. An ion extraction electrode is formed at least partly of a low magnetic permeability material while an acceleration electrode is formed of a high magnetic permeability material. The acceleration electrode is formed so as to have a structure in which a low magnetic permeability material of a certain thickness is stacked on the high magnetic permeability material at a plasma chamber side and openings of ion exit holes are formed in the portion of the low magnetic permeability material. A permanent magnet constituting a magnetic field generating means is provided to surround the microwave lead-in coaxial line. The direction of magnetization of the permanent magnet is made to coincide with the axial direction of the coaxial line.
    Type: Grant
    Filed: March 15, 1989
    Date of Patent: October 1, 1991
    Assignee: Hitachi, Ltd.
    Inventors: Hidemi Koike, Noriyuki Sakudo, Katsumi Tokiguchi, Takayoshi Seki, Kensuke Amemiya