Patents by Inventor Kensuke Ishikawa

Kensuke Ishikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220399232
    Abstract: A vertical layer stack including a bit-line-level dielectric layer and an etch stop dielectric layer can be formed over an array region. Bit-line trenches are formed through the vertical layer stack. Bit-line-trench fill structures are formed in the bit-line trenches. Each of the bit-line-trench fill structures includes a stack of a bit line and a capping dielectric strip. At least one via-level dielectric layer can be formed over the vertical layer stack. A bit-line-contact via cavity can be formed through the at least one via-level dielectric layer and one of the capping dielectric strips. A bit-line-contact via structure formed in the bit-line-contact via cavity includes a stepped bottom surface including a top surface of one of the bit lines, a sidewall segment of the etch stop dielectric layer, and a segment of a top surface of the etch stop dielectric layer.
    Type: Application
    Filed: June 11, 2021
    Publication date: December 15, 2022
    Inventors: Fumitaka AMANO, Yusuke OSAWA, Kensuke ISHIKAWA, Mitsuteru MUSHIGA, Motoki KAWASAKI, Shinsuke YADA, Masato MIYAMOTO, Syo FUKATA, Takashi KASHIMURA, Shigehiro FUJINO
  • Publication number: 20220336394
    Abstract: A bonded assembly includes a first semiconductor die that includes first metallic bonding structures embedded within a first bonding-level dielectric layer, and a second semiconductor die that includes second metallic bonding structures embedded within a second bonding-level dielectric layer and bonded to the first metallic bonding structures by metal-to-metal bonding. One of the first metallic bonding structures a pad portion, and a via portion located between the pad portion and the first semiconductor device, the via portion having second tapered sidewalls.
    Type: Application
    Filed: June 30, 2022
    Publication date: October 20, 2022
    Inventors: Kensuke ISHIKAWA, Shingo TOTANI, Fumitaka AMANO, Rahul SHARANGPANI
  • Publication number: 20190244855
    Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
    Type: Application
    Filed: April 16, 2019
    Publication date: August 8, 2019
    Inventors: Junji NOGUCHI, Takayuki OSHIMA, Noriko MIURA, Kensuke ISHIKAWA, Tomio IWASAKI, Kiyomi KATSUYAMA, Tatsuyuki SAITO, Tsuyoshi TAMARU, Hizuru YAMAGUCHI
  • Patent number: 10304726
    Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
    Type: Grant
    Filed: September 21, 2018
    Date of Patent: May 28, 2019
    Assignee: Renesas Electronics Corporation
    Inventors: Junji Noguchi, Takayuki Oshima, Noriko Miura, Kensuke Ishikawa, Tomio Iwasaki, Kiyomi Katsuyama, Tatsuyuki Saito, Tsuyoshi Tamaru, Hizuru Yamaguchi
  • Publication number: 20190035678
    Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
    Type: Application
    Filed: September 21, 2018
    Publication date: January 31, 2019
    Inventors: Junji NOGUCHI, Takayuki OSHIMA, Noriko MIURA, Kensuke ISHIKAWA, Tomio IWASAKI, Kiyomi KATSUYAMA, Tatsuyuki SAITO, Tsuyoshi TAMARU, Hizuru YAMAGUCHI
  • Patent number: 10121693
    Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
    Type: Grant
    Filed: October 9, 2017
    Date of Patent: November 6, 2018
    Assignee: Renesas Electronics Corporation
    Inventors: Junji Noguchi, Takayuki Oshima, Noriko Miura, Kensuke Ishikawa, Tomio Iwasaki, Kiyomi Katsuyama, Tatsuyuki Saito, Tsuyoshi Tamaru, Hizuru Yamaguchi
  • Patent number: 10115735
    Abstract: A semiconductor device includes a silicon surface, a titanium silicide layer contacting the silicon surface, a first titanium nitride layer located over the titanium silicide layer, a titanium oxynitride layer contacting the first titanium nitride layer, a second titanium nitride layer contacting the titanium oxynitride layer, and a metal fill layer located over the second titanium nitride layer.
    Type: Grant
    Filed: June 8, 2017
    Date of Patent: October 30, 2018
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Fumitaka Amano, Kensuke Ishikawa, Shinya Inoue, Michiaki Sano
  • Publication number: 20180247954
    Abstract: A semiconductor device includes a silicon surface, a titanium silicide layer contacting the silicon surface, a first titanium nitride layer located over the titanium silicide layer, a titanium oxynitride layer contacting the first titanium nitride layer, a second titanium nitride layer contacting the titanium oxynitride layer, and a metal fill layer located over the second titanium nitride layer.
    Type: Application
    Filed: June 8, 2017
    Publication date: August 30, 2018
    Inventors: Fumitaka Amano, Kensuke Ishikawa, Shinya Inoue, Michiaki Sano
  • Publication number: 20180047620
    Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
    Type: Application
    Filed: October 9, 2017
    Publication date: February 15, 2018
    Inventors: Junji NOGUCHI, Takayuki OSHIMA, Noriko MIURA, Kensuke ISHIKAWA, Tomio IWASAKI, Kiyomi KATSUYAMA, Tatsuyuki SAITO, Tsuyoshi TAMARU, Hizuru YAMAGUCHI
  • Patent number: 9818639
    Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
    Type: Grant
    Filed: March 27, 2017
    Date of Patent: November 14, 2017
    Assignee: Renesas Electronics Corporation
    Inventors: Junji Noguchi, Takayuki Oshima, Noriko Miura, Kensuke Ishikawa, Tomio Iwasaki, Kiyomi Katsuyama, Tatsuyuki Saito, Tsuyoshi Tamaru, Hizuru Yamaguchi
  • Patent number: 9779312
    Abstract: Provided is a system capable of further reducing risk such as a contact between a moving body such as a vehicle and a traffic participant present around the moving body. According to an environment recognition system (1) of the present invention, a database (10) stores each of a plurality of reference symbol strings describing the state of an environmental element constituting each of a plurality of scenes assumed to be around the moving body. A first arithmetic processing element (11) detects a scene around the moving body and generates a symbol string describing the state of the environmental element constituting the detected scene. A second arithmetic processing element (12) evaluates similarity between the symbol string and each of the plurality of reference symbol strings stored in the database (10).
    Type: Grant
    Filed: January 27, 2016
    Date of Patent: October 3, 2017
    Assignee: HONDA MOTOR CO., LTD.
    Inventors: Yoshiaki Sakagami, Taku Osada, Kensuke Ishikawa
  • Publication number: 20170200637
    Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
    Type: Application
    Filed: March 27, 2017
    Publication date: July 13, 2017
    Inventors: Junji NOGUCHI, Takayuki OSHIMA, Noriko MIURA, Kensuke ISHIKAWA, Tomio IWASAKI, Kiyomi KATSUYAMA, Tatsuyuki SAITO, Tsuyoshi TAMARU, Hizuru YAMAGUCHI
  • Patent number: 9659867
    Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
    Type: Grant
    Filed: September 22, 2016
    Date of Patent: May 23, 2017
    Assignee: Renesas Electronics Corporation
    Inventors: Junji Noguchi, Takayuki Oshima, Noriko Miura, Kensuke Ishikawa, Tomio Iwasaki, Kiyomi Katsuyama, Tatsuyuki Saito, Tsuyoshi Tamaru, Hizuru Yamaguchi
  • Publication number: 20170011994
    Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
    Type: Application
    Filed: September 22, 2016
    Publication date: January 12, 2017
    Inventors: Junji NOGUCHI, Takayuki OSHIMA, Noriko MIURA, Kensuke ISHIKAWA, Tomio IWASAKI, Kiyomi KATSUYAMA, Tatsuyuki SAITO, Tsuyoshi TAMARU, Hizuru YAMAGUCHI
  • Patent number: 9490213
    Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
    Type: Grant
    Filed: May 1, 2015
    Date of Patent: November 8, 2016
    Assignee: Renesas Electronics Corporation
    Inventors: Junji Noguchi, Takayuki Oshima, Noriko Miura, Kensuke Ishikawa, Tomio Iwasaki, Kiyomi Katsuyama, Tatsuyuki Saito, Tsuyoshi Tamaru, Hizuru Yamaguchi
  • Publication number: 20160224849
    Abstract: Provided is a system capable of further reducing risk such as a contact between a moving body such as a vehicle and a traffic participant present around the moving body. According to an environment recognition system (1) of the present invention, a database (10) stores each of a plurality of reference symbol strings describing the state of an environmental element constituting each of a plurality of scenes assumed to be around the moving body. A first arithmetic processing element (11) detects a scene around the moving body and generates a symbol string describing the state of the environmental element constituting the detected scene. A second arithmetic processing element (12) evaluates similarity between the symbol string and each of the plurality of reference symbol strings stored in the database (10).
    Type: Application
    Filed: January 27, 2016
    Publication date: August 4, 2016
    Inventors: Yoshiaki Sakagami, Taku Osada, Kensuke Ishikawa
  • Publication number: 20150235962
    Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
    Type: Application
    Filed: May 1, 2015
    Publication date: August 20, 2015
    Inventors: Junji NOGUCHI, Takayuki OSHIMA, Noriko MIURA, Kensuke ISHIKAWA, Tomio IWASAKI, Kiyomi KATSUYAMA, Tatsuyuki SAITO, Tsuyoshi TAMARU, Hizuru YAMAGUCHI
  • Patent number: 9064870
    Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
    Type: Grant
    Filed: June 30, 2014
    Date of Patent: June 23, 2015
    Assignee: Renesas Electronics Corporation
    Inventors: Junji Noguchi, Takayuki Oshima, Noriko Miura, Kensuke Ishikawa, Tomio Iwasaki, Kiyomi Katsuyama, Tatsuyuki Saito, Tsuyoshi Tamaru, Hizuru Yamaguchi
  • Publication number: 20140312499
    Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
    Type: Application
    Filed: June 30, 2014
    Publication date: October 23, 2014
    Applicant: Renesas Electronics Corporation
    Inventors: Junji NOGUCHI, Takayuki OSHIMA, Noriko MIURA, Kensuke ISHIKAWA, Tomio IWASAKI, Kiyomi KATSUYAMA, Tatsuyuki SAITO, Tsuyoshi TAMARU, Hizuru YAMAGUCHI
  • Patent number: 8810034
    Abstract: The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
    Type: Grant
    Filed: December 3, 2013
    Date of Patent: August 19, 2014
    Assignee: Renesas Electronics Corporation
    Inventors: Junji Noguchi, Takayuki Oshima, Noriko Miura, Kensuke Ishikawa, Tomio Iwasaki, Kiyomi Katsuyama, Tatsuyuki Saito, Tsuyoshi Tamaru, Hizuru Yamaguchi