Abstract: A semiconductor device includes an insulating layer provided on a first impurity layer and a second impurity layer on a termination region side, a metallized layer provided on the first impurity layer and the second impurity layer exposed from the insulating layer and on the insulating layer, and an electrode provided on the metallized layer. A position of a first end of the metallized layer on the termination region side and a position of a second end of the electrode on the termination region side are the same in plan view.

Abstract: A drift layer contains first conductivity type impurities. A well region contains second conductivity type impurities. A source region is provided on the well region and contains the first conductivity type impurities. A well contact region is in contact with the well region, contains the second conductivity type impurities, and has an impurity concentration on the second surface higher than the impurity concentration on the second surface in the well region. A gate electrode is provided on a gate insulating film. A Schottky electrode is in contact with the drift layer. A source ohmic electrode is in contact with the source region. A resistor is in contact with the well contact region and has higher resistance per unit area than the source ohmic electrode.

Abstract: The heater component (1) has a substrate part (2), and a thin coating heater (4) which is equipped outside this substrate part (2) and generates heat by power supply. The thin coating heater (4) is formed of a thermal sprayed coating. The thin coating heater (4) has a heater body (10) and a heater extension part (11). The heater body (10) is arranged on a first end face (2a) of the substrate part (2). The heater extension part (11) is extended from the heater body (10) to a second end face (2b) of the substrate part (2) through a side surface (2c) of the substrate part (2). A tip part (11s) of the heater extension part (11) is a heater power supplying part (12) for supplying electric power to the heater body (10).

Abstract: There is provided a technique for suppressing the operation of a parasitic transistor in a semiconductor device having a voltage sense structure. The semiconductor device includes: a semiconductor layer; a first impurity region; a second impurity region; a first semiconductor region; a second semiconductor region; a first electrode; a second electrode; and a third electrode. The second impurity region includes a low lifetime region at least under the second semiconductor region. The low lifetime region is a region having a defect density higher than that in a surface layer of the second impurity region or a region in which a heavy metal is diffused.

Abstract: A drift layer contains first conductivity type impurities. A well region contains second conductivity type impurities. A source region is provided on the well region and contains the first conductivity type impurities. A well contact region is in contact with the well region, contains the second conductivity type impurities, and has an impurity concentration on the second surface higher than the impurity concentration on the second surface in the well region. A gate electrode is provided on a gate insulating film. A Schottky electrode is in contact with the drift layer. A source ohmic electrode is in contact with the source region. A resistor is in contact with the well contact region and has higher resistance per unit area than the source ohmic electrode.

Abstract: A silicon carbide substrate is provided with a first surface and a second surface opposite the first surface. The silicon carbide substrate includes an n-type region connecting the first surface and the second surface, and a p-type region being in contact with the first surface and connecting the first surface and the second surface. A first anode electrode is Schottky-joined, on the first surface, to the n-type region. A first cathode electrode is ohmically joined, on the second surface, to the n-type region. A second anode electrode is ohmically joined, on the first surface, to the p-type region. A second cathode electrode is Schottky-joined, on the second surface, to the p-type region.

Abstract: Provided is a heat generating component of which volume resistivity hardly varies even if used repeatedly at a high temperature for a long period of time. Since a thin coating heater part (13) formed on a substrate part (12) is composed of a thermal sprayed coating containing TixOy (wherein, 0<y/x<2.0 is satisfied), obtained is a heat generating component (11) having volume resistivity which is suitable for a heater and hardly varies even if prescribed temperature change and temperature keeping are repeated.

Abstract: A trench-gate semiconductor device including an outside trench, increases reliability of an insulating film at a corner of an open end of the outside trench. The semiconductor device includes: a gate trench reaching an inner part of an n-type drift layer in a cell region; an outside trench outside the cell region; a gate electrode formed inside the gate trench through a gate insulating film; a gate line formed inside the outside trench through an insulating film; and a gate line leading portion formed through the insulating film to cover a corner of an open end of the outside trench closer to the cell region, and electrically connecting the gate electrode to the gate line, and the surface layer of the drift layer in contact with the corner has a second impurity region of p-type that is a part of the well region.

Abstract: A silicon carbide substrate is provided with a first surface and a second surface opposite the first surface. The silicon carbide substrate includes an n-type region connecting the first surface and the second surface, and a p-type region being in contact with the first surface and connecting the first surface and the second surface. A first anode electrode is Schottky-joined, on the first surface, to the n-type region. A first cathode electrode is ohmically joined, on the second surface, to the n-type region. A second anode electrode is ohmically joined, on the first surface, to the p-type region. A second cathode electrode is Schottky-joined, on the second surface, to the p-type region.

Abstract: An object of the present invention is to provide a silicon carbide semiconductor device with which the electric field at the time of switching is relaxed and the element withstand voltage can be enhanced. The distance between the outer peripheral end of a second surface electrode and the inner peripheral end of a field insulation film is smaller than the distance between an outer peripheral end of the second surface electrode and an inner peripheral end of the field insulation film in the case where the electric field strength applied to the outer peripheral lower end of the second surface electrode is calculated so as to become equal to the smallest dielectric breakdown strength among the dielectric breakdown strength of the field insulation film and the dielectric breakdown strength of the surface protective film at the time of switching when the value of dV/dt is greater than or equal to 10 kV/?s.

Abstract: A semiconductor device according to the present invention includes, in a termination region, a p? type breakdown voltage holding region that is an impurity region formed in a predetermined depth direction from a substrate surface of an n? type substrate, a first insulating film formed on the n? type substrate so as to cover at least the p? type breakdown voltage holding region, a first field plate formed on the first insulating film, a second insulating film formed so as to cover the first field plate and the first insulating film, and a second field plate formed on the second insulating film. The first insulating film is thicker in a corner portion than in an X-direction straight portion and a Y-direction straight portion.

Abstract: An electrostatic chuck and a manufacturing method are disclosed in which drawbacks of using an adhesive are not existent and a freedom degree of design is high. The electrostatic chuck includes a substrate part constituting a main chuck body, a first insulating layer of a spray coating formed to the surface of the substrate part, a heater part of an electric conductor formed by applying a conductive paste to the surface of the first insulating layer, a second insulating layer of a spray coating formed to the surface of the first insulating layer so as to cover the heater part, an electrode part formed by thermal spraying to the surface of the second insulating layer and a dielectric layer of a spray coating formed to the surface of the second layer so as to cover the electrode part and lowers a volume resistivity without using an adhesive.

Abstract: A trench-gate semiconductor device including an outside trench, increases reliability of an insulating film at a corner of an open end of the outside trench. The semiconductor device includes: a gate trench reaching an inner part of an n-type drift layer in a cell region; an outside trench outside the cell region; a gate electrode formed inside the gate trench through a gate insulating film; a gate line formed inside the outside trench through an insulating film; and a gate line leading portion formed through the insulating film to cover a corner of an open end of the outside trench closer to the cell region, and electrically connecting the gate electrode to the gate line, and the surface layer of the drift layer in contact with the corner has a second impurity region of p-type that is a part of the well region.

Abstract: An object of the present invention is to provide a silicon carbide semiconductor device with which the electric field at the time of switching is relaxed and the element withstand voltage can be enhanced. The distance between the outer peripheral end of a second surface electrode and the inner peripheral end of a field insulation film is smaller than the distance between an outer peripheral end of the second surface electrode and an inner peripheral end of the field insulation film in the case where the electric field strength applied to the outer peripheral lower end of the second surface electrode is calculated so as to become equal to the smallest dielectric breakdown strength among the dielectric breakdown strength of the field insulation film and the dielectric breakdown strength of the surface protective film at the time of switching when the value of dV/dt is greater than or equal to 10 kV/?s.

Abstract: A gimbal device includes a controller for controlling a gimbal mechanism to which an imaging device is fixed. The controller includes an angular velocity signal acquisition unit, a relative angle acquisition unit, and an angular velocity signal synthesizer. The angular velocity signal acquisition unit acquires first to third angular velocity signals. The relative angle acquisition unit acquires first and second relative angles. The angular velocity signal synthesizer generates from the first to third angular velocity signals and the first and second relative angles, first to third rotational shift angular velocity signals which are signals of a first rotational shift angular velocity about an axis parallel to a first correction axis, a second rotational shift angular velocity about an axis parallel to a second correction axis, and a third rotational shift angular velocity about an axis parallel to a third correction axis, respectively.

Abstract: A gimbal device includes a controller for controlling a gimbal mechanism to which an imaging device is fixed. The controller includes an angular velocity signal acquisition unit, a relative angle acquisition unit, and an angular velocity signal synthesizer. The angular velocity signal acquisition unit acquires first to third angular velocity signals. The relative angle acquisition unit acquires first and second relative angles. The angular velocity signal synthesizer generates from the first to third angular velocity signals and the first and second relative angles, first to third rotational shift angular velocity signals which are signals of a first rotational shift angular velocity about an axis parallel to a first correction axis, a second rotational shift angular velocity about an axis parallel to a second correction axis, and a third rotational shift angular velocity about an axis parallel to a third correction axis, respectively.

Abstract: Provided is an image pickup apparatus that includes: an image pickup unit configured to generate picked-up image data by an image pickup process; a camera shake detection unit configured to detect an angular velocity generated by camera shake when shooting; an electronic image stabilization unit configured to perform an image stabilization process by moving a position of a cropping area in the picked-up image data, based on the angular velocity detected by the camera shake detection unit; and an area changing unit configured to change a size of the cropping area with respect to the picked-up image data, based on the angular velocity detected by the camera shake detection unit.

Abstract: A termination structure located in an outer periphery portion of a semiconductor element includes an N-type drift region formed in a semiconductor substrate and a P-type impurity region formed in an upper surface portion in the N-type drift region. The P-type impurity region has, in macroscopic view, a P-type impurity concentration that decreases from an inner periphery portion toward an outer periphery portion of the termination structure. The P-type impurity region includes, in microscopic view, a plurality of high-concentration regions of the P-type and a low-concentration region surrounding the plurality of high-concentration regions and has a part including the low-concentration regions separate from each other.

Abstract: An electrostatic chuck and a manufacturing method are disclosed in which drawbacks of using an adhesive are not existent and a freedom degree of design is high. The electrostatic chuck includes a substrate part constituting a main chuck body, a first insulating layer of a spray coating formed to the surface of the substrate part, a heater part of an electric conductor formed by applying a conductive paste to the surface of the first insulating layer, a second insulating layer of a spray coating formed to the surface of the first insulating layer so as to cover the heater part, an electrode part formed by thermal spraying to the surface of the second insulating layer and a dielectric layer of a spray coating formed to the surface of the second layer so as to cover the electrode part and lowers a volume resistivity without using an adhesive.

Abstract: A semiconductor device according to the present invention includes, in a termination region, a p? type breakdown voltage holding region that is an impurity region formed in a predetermined depth direction from a substrate surface of an n? type substrate, a first insulating film formed on the n? type substrate so as to cover at least the p? type breakdown voltage holding region, a first field plate formed on the first insulating film, a second insulating film formed so as to cover the first field plate and the first insulating film, and a second field plate formed on the second insulating film. The first insulating film is thicker in a corner portion than in an X-direction straight portion and a Y-direction straight portion.