Abstract: A semiconductor device includes a gate electrode line provided to extend from an N-type area through a device isolation area to a P-type area, and source/drain diffused regions formed in N-type and P-type areas. The gate electrode line includes a first silicide region which configures a P-type MOSFET gate electrode and includes therein a silicide of metal M1, a second silicide region which configures an N-type MOSFET gate electrode and includes therein a silicide of metal M2, and an impurity-doped silicon region which is provided on a device isolation area and includes therein impurities at a higher concentration than both the gate electrodes.

Abstract: A variable resistance element includes: a first electrode; a variable resistance material layer formed on the first electrode; and a second electrode formed on this variable resistance material layer. The variable resistance material layer is made of an uncrystallized material including a transition metal oxide, which is an oxide of a transition metal M1, the transition metal oxide containing an oxide of a nontransition metal element M2.

Abstract: There is provided a semiconductor device having excellent device characteristics in which Vth values of an nMOS transistor and a pMOS transistor are controlled to be desired values. The semiconductor device includes a pMOS transistor and an nMOS transistor formed by using an SOI substrate. The pMOS transistor is a fully depleted transistor including an n-type region, a first gate electrode, a first gate insulating film, and a source/drain region, and the nMOS transistor is a fully depleted transistor including a p-type region, a second gate electrode, a second gate insulating film, and a source/drain region. The first gate electrode includes silicide region comprising an NiSi crystalline phase containing an n-type impurity, the silicide region being in contact with the first gate insulating film, and the second gate electrode includes silicide region comprising an NiSi crystalline phase containing a p-type impurity, the silicide region being in contact with the second gate insulating film.

Abstract: In an optical switch controller, in order that residual vibration at movement control of a movable body such as a tilt mirror can be reduced and controlled with high accuracy, a processing unit outputs a driving signal for controlling the angle of the tilt mirror, the driving signal is D/A converted by a D/A converter and then is changed to a high-voltage signal by a high-voltage amplifier to be supplied to the tilt mirror, the electrostatic capacity of the tilt mirror changes corresponding to angle change of the tilt mirror, a mirror-angle detecting unit detects the electrostatic capacity and feeds back it as a correction value to a processing unit, and the processing unit corrects the driving signal using a correction value obtained when the angle of the tilt mirror is actually changed.

Abstract: A control system for an internal combustion engine having at least one fuel injection valve for injecting fuel into a combustion chamber of the engine. A compression end temperature in the combustion chamber is estimated. A target compression end temperature is calculated according to an operating condition of the engine. A main injection and a plurality of pilot injections before the main injection are performed by at least one fuel injection valve. A fuel injection amount in a first-performed pilot injection of the plurality of pilot injections is controlled so that the estimated compression end temperature coincides with the target compression end temperature.

Abstract: A second mask is provided so as to cover a second gate pattern and a first gate pattern is heated to a temperature at which a material gas containing a first metal thermally decomposes, polysilicon constituting the first gate pattern is reacted with the first metal for silicidation under the conditions that the layer of the first metal does not deposit, and thus the first gate pattern is turned into a first gate electrode constituted by a silicide of the first metal. After the second mask is removed, a first mask is provided so as to cover the first electrode and the second gate pattern is heated to a temperature at which the material gas thermally decomposes, polysilicon constituting the second gate pattern is reacted with the first metal for silicidation under the conditions that the layer of the first metal does not deposit, and thus the second gate pattern is turned into a second gate electrode constituted by the silicide of the first metal. Then, the first mask is removed.

Abstract: In an optical switch controller, in order that residual vibration at movement control of a movable body such as a tilt mirror can be reduced and controlled with high accuracy, a processing unit outputs a driving signal for controlling the angle of the tilt mirror, the driving signal is D/A converted by a D/A converter and then is changed to a high-voltage signal by a high-voltage amplifier to be supplied to the tilt mirror, the electrostatic capacity of the tilt mirror changes corresponding to angle change of the tilt mirror, a mirror-angle detecting unit detects the electrostatic capacity and feeds back it as a correction value to a processing unit, and the processing unit corrects the driving signal using a correction value obtained when the angle of the tilt mirror is actually changed.

Abstract: There is provided a semiconductor device having excellent device characteristics and reliability in which Vth values of an nMOS transistor and a pMOS transistor are controlled to be values necessary for a low-power device. The semiconductor device includes a pMOS transistor and an nMOS transistor formed by using an SOI substrate. The pMOS transistor is a fully depleted MOS transistor including a first gate electrode comprising at least one type of crystalline phase selected from the group consisting of a WSi2 crystalline phase, an MoSi2 crystalline phase, an NiSi crystalline phase, and an NiSi2 crystalline phase as silicide region (1). The nMOS transistor is a fully depleted MOS transistor comprising at least one type of crystalline phase selected from the group consisting of a PtSi crystalline phase, a Pt2Si crystalline phase, an IrSi crystalline phase, an Ni2Si crystalline phase, and an Ni3Si crystalline phase as silicide region (2).

Abstract: There is provided a semiconductor device which is capable of solving a problem of threshold control in CMOS transistor, accompanied with combination of a gate insulating film having a high dielectric constant and a metal gate electrode, and significantly enhancing performances without deterioration in reliability of a device. The semiconductor device includes a gate insulating film composed of a material having a high dielectric constant, and a gate electrode. A portion of the gate electrode making contact with the gate insulating film has a composition including silicide of metal M expressed with MxSi1-X (0<X<1), as a primary constituent. X is greater than 0.5 (X>0.5) in a p-type MOSFET, and is equal to or smaller than 0.5 (X?0.5) in a n-type MOSFET.

Abstract: A optical transmitter includes a light device provided a driving current and for emitting light on the bases of the driving current; a light measure for measuring an output light level of the light device; a controller for controlling the driving current to the light device and for changing the measured output light power level into a set output light power level of the light device; a current measure for measuring a level of the driving current to the light device; an abnormality detector for detecting an aged deterioration of the light device on the bases of the current level of the driving current by the current measure and the measured output light power level by the light measure; and an adjuster for reducing the set output light power level in the controller when the abnormality detector detects the aged deterioration of the light device.

Abstract: A formation method of a metallic compound layer includes preparing, in a chamber, a substrate having a surface on which a semiconductor material of silicon, germanium, or silicon germanium is exposed, and forming a metallic compound layer, includes: supplying a raw material gas containing a metal for forming a metallic compound with the semiconductor material to the chamber; heating the substrate to a temperature at which the raw material gas is pyrolyzed; and forming a metallic compound layer by reaction of the metal with the semiconductor material so that no layer of the metal is deposited on the substrate. A manufacturing method of a semiconductor device employs this formation method of a metallic compound layer.

Abstract: A semiconductor device including a silicon substrate and a field effect transistor including a gate insulating film on the silicon substrate, a gate electrode on the gate insulating film, and source/drain regions formed in the substrate on opposite sides of the gate electrode, wherein the gate electrode includes a silicide layer containing an Ni3Si crystal phase, at least in a portion of the gate electrode, the portion including a lower surface thereof, and the transistor includes an adhesion layer containing a metal oxide component, between the gate insulating film and the gate electrode.

Abstract: A control system for an internal combustion engine having at least one fuel injection valve for injecting fuel into a combustion chamber of the engine. A compression end temperature in the combustion chamber is estimated. A target compression end temperature is calculated according to an operating condition of the engine. A main injection and a plurality of pilot injections before the main injection are performed by at least one fuel injection valve. A fuel injection amount in a first-performed pilot injection of the plurality of pilot injections is controlled so that the estimated compression end temperature coincides with the target compression end temperature.

Abstract: There is provided a semiconductor device including: a first field effect transistor region including a gate insulating film, a gate electrode and gate sidewalls formed in a P channel forming region; and a second field effect transistor region including a gate insulating film, a gate electrode and gate sidewalls formed in an N channel forming region on a semiconductor substrate, wherein in the first and second field effect transistor regions, the gate electrodes are composed primarily of a silicide of metal M represented as M(x)Si(1?x)(0<x<1) and satisfy t1?t2<L/2, wherein the height of the gate electrodes is t1, the height of the gate sidewalls is t2 and the gate length of the gate electrodes is L; and the height of the gate electrode in the P channel forming region is greater than the height of the gate electrode in the N channel forming region.

Abstract: A semiconductor device including a silicon substrate; a gate insulating film on the silicon substrate; a gate electrode on the gate insulating film; and source/drain regions formed in the substrate on both sides of the gate electrode, wherein the gate electrode includes a first silicide layered region formed of a silicide of a metal M1; and a second silicide layered region on the first silicide layered region, the second silicide layered region being formed of a silicide of the same metal as the metal M1 and being lower in resistivity than the first silicide layered region.

Abstract: In an optical switch controller, in order that residual vibration at movement control of a movable body such as a tilt mirror can be reduced and controlled with high accuracy, a processing unit outputs a driving signal for controlling the angle of the tilt mirror, the driving signal is D/A converted by a D/A converter and then is changed to a high-voltage signal by a high-voltage amplifier to be supplied to the tilt mirror, the electrostatic capacity of the tilt mirror changes corresponding to angle change of the tilt mirror, a mirror-angle detecting unit detects the electrostatic capacity and feeds back it as a correction value to a processing unit, and the processing unit corrects the driving signal using a correction value obtained when the angle of the tilt mirror is actually changed.

Abstract: There is provided a semiconductor device which is capable of solving a problem of threshold control in CMOS transistor, accompanied with combination of a gate insulating film having a high dielectric constant and a metal gate electrode, and significantly enhancing performances without deterioration in reliability of a device. The semiconductor device includes a gate insulating film composed of a material having a high dielectric constant, and a gate electrode. A portion of the gate electrode making contact with the gate insulating film has a composition including silicide of metal M expressed with MxSi1-X (0<X<1), as a primary constituent. X is greater than 0.5 (X>0.5) in a p-type MOSFET, and is equal to or smaller than 0.5 (X?0.5) in a n-type MOSFET.

Abstract: In an optical switch controller, in order that residual vibration at movement control of a movable body such as a tilt mirror can be reduced and controlled with high accuracy, a processing unit outputs a driving signal for controlling the angle of the tilt mirror, the driving signal is D/A converted by a D/A converter and then is changed to a high-voltage signal by a high-voltage amplifier to be supplied to the tilt mirror, the electrostatic capacity of the tilt mirror changes corresponding to angle change of the tilt mirror, a mirror-angle detecting unit detects the electrostatic capacity and feeds back it as a correction value to a processing unit, and the processing unit corrects the driving signal using a correction value obtained when the angle of the tilt mirror is actually changed.

Abstract: An apparatus for cooking food and extracting smoke is disclosed comprising a grill for use with a heat source, the grill having an upwardly convex cooking surface with ventilation holes formed therein and a peripheral groove for collecting food juices, and further comprising a hood for collecting smoke supported above a grill on a cooking table and duct work leading from within the hood, through the table and away to external exhaust. The apparatus is suited for restaurant dining room use.