Patents by Inventor Kenta Hirose

Kenta Hirose has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • OXIDE FOR SEMICONDUCTOR LAYER IN THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, DISPLAY DEVICE, AND SPUTTERING TARGET
    Publication number: 20150076489
    Abstract: Provided is an oxide semiconductor configured to be used in a thin film transistor having high field-effect mobility; a small shift in threshold voltages against light and bias stress; excellent stress resistance. The oxide semiconductor has also excellent resistance to a wet-etchant for patterning of a source-drain electrode. The oxide semiconductor comprises In, Zn, Ga, Sn and O, and satisfies the requirements represented by expressions (1) to (4) shown below, wherein [In], [Zn], [Ga], and [Sn] represent content (in atomic %) of each of the elements relative to the total content of all the metal elements other than oxygen in the oxide. (1.67×[Zn]+1.67×[Ga])?100 ??(1) {([Zn]/0.95)+([Sn]/0.40)+([In]/0.
    Type: Application
    Filed: May 28, 2013
    Publication date: March 19, 2015
    Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)
    Inventors: Shinya Morita, Kenta Hirose, Aya Miki, Toshihiro Kugimiya