Abstract: To provide a solid-state imaging device capable of further improving quality and reliability of the solid-state imaging device. Provided is a solid-state imaging device including: a first substrate; a second substrate laminated on the first substrate by direct bonding on a side opposite to a light incident side of the first substrate, the second substrate having a size different from a size of the first substrate; a third substrate provided on a side opposite to a light incident side of the second substrate; and an insulating layer formed between the first substrate and the third substrate, in which the third substrate includes a well formed on a light incident side of the third substrate.

Abstract: Bonding strength of a connection portion bonded to a semiconductor element is measured. The semiconductor element includes a semiconductor substrate and a bond pad. In the semiconductor substrate, an element is formed, and a wiring region having a wiring for transmitting a signal of the element is disposed adjacent. The bond pad is disposed in the wiring region adjacent to a semiconductor substrate removal region, which is a region where the semiconductor substrate is removed, connected to the wiring, and bonded with a connection portion for connection to an outside. The semiconductor substrate removal region includes a region for measuring bonding strength of the bond pad and the connection portion.

Abstract: The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit.

Abstract: The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes: a photoelectric conversion unit; a charge holding unit for holding charges transferred from the photoelectric conversion unit; a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit; and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type, for example.

Abstract: A light-receiving device includes: a first chip having a pixel region in which a sensor pixel is provided; a second chip including a processing circuit that performs signal processing on a sensor signal outputted from the sensor pixel, the second chip being stacked on the first chip; and a first alignment mark provided in the pixel region of the first chip to correspond to a second alignment mark provided in the second chip.

Abstract: [Problem] There is provided a solid-state image pickup device and an electronic apparatus, which are capable of using a substrate other than a {100} substrate while suppressing the problem of substrates other than the {100} substrate. [Means of Solution] The solid-state image pickup device in the present disclosure includes a first substrate that is a substrate other than a {100} substrate; a photoelectric conversion unit that is provided in the first substrate; a lens that is provided above the first substrate; one or more substrates that are provided below the first substrate and have a crystal plane different from a crystal plane of the first substrate; and a transistor that is provided on an upper surface or a lower surface of one of the one or more substrates and is included in a source follower circuit.

Abstract: Provided is a resin panel enabling an infrared sensor to fully function when the resin panel is applied as a protective cover to the infrared sensor. The resin panel comprises at least a core layer and has a light transmittance at a wavelength of 905 nm of 85% or more and a visible light transmittance of 20% or less.

Abstract: [Object] There are provided a solid-state imaging device that can minimize a decrease in layout efficiency due to trenches and a method of producing the same.

Abstract: Provided is a decorative molded article that uniformizes the brightness of an uneven surface and inhibits whitening. The decorative molded article is provided with a protective layer having an uneven surface on an adherend, and satisfying the following requirement 1-1: <Requirement 1-1> A black plate is stuck to the surface of the article on the adherend side thereof via a transparent pressure-sensitive adhesive layer to prepare a sample A. A visible light inclined by 10 degrees from the normal direction of the sample A is made to run into the uneven surface, and based on the specular direction of the incident light as a reference angle, a luminous reflectance is measured every 0.2 degrees within a range of the reference angle±5.0 degrees.

Abstract: A back-illuminated type solid-state image pickup unit in which a pad wiring line is provided on a light reception surface and which is capable of improving light reception characteristics in a photoelectric conversion section by having a thinner insulating film in a pixel region. The solid-state image pickup unit includes a sensor substrate having a pixel region in which photoelectric conversion sections are formed in an array, and a drive circuit is provided on a surface opposed to a light reception surface for the photoelectric conversion sections of the sensor substrate. A through hole via reaching the drive circuit from the light reception surface of the sensor substrate is provided in a peripheral region located outside the pixel region. A pad wiring line directly laminated on the through hole via is provided on the light reception surface in the peripheral region.

Abstract: Provided are a decorative molded article that prevents sparkle and has a high contrast, a method for producing the decorative molded article, and a transfer sheet for use for the decorative molded article. The decorative molded article 10 is provided with a protective layer 2 having unevenness on a resin molded article 1, wherein in the surface of the protective layer 2, the arithmetic average roughness (Rax1) according to JIS B0601:1994 at a cutoff value of 0.8 mm, the arithmetic average roughness (Ray1) according to JIS B0601:1994 at a cutoff value of 0.08 mm, and the ten-point average roughness (Rzx1) according to JIS B0601:1994 at a cutoff value of 0.8 mm satisfy the following requirements (1) to (3): 0.30?(Rax1?Ray1)/Ray1?0.85 (1), Rzx1/Rax1?15.0 (2), Rax1?0.14 ?m (3).

Abstract: The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes: a photoelectric conversion unit; a charge holding unit for holding charges transferred from the photoelectric conversion unit; a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit; and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type, for example.

Abstract: The solid-state image sensing device includes a photoelectric conversion unit, a charge holding unit for holding charges transferred from the photoelectric conversion unit, a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit, and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit.

Abstract: An imaging element of the present disclosure includes: a photoelectric conversion section 21 provided in a substrate 30; a polarizer 50 formed over the photoelectric conversion section 21, with a single ground insulating layer 31 interposed therebetween; and a light shielding section 41A formed on an upper side of a peripheral region 21? around the photoelectric conversion section 21.

Abstract: Provided are a decorative molded article that prevents sparkle and has a high contrast, a method for producing the decorative molded article, and a transfer sheet for use for the decorative molded article. The decorative molded article 10 is provided with a protective layer 2 having unevenness on a resin molded article 1, wherein in the surface of the protective layer 2, the arithmetic average roughness (Rax1) according to JIS B0601:1994 at a cutoff value of 0.8 mm, the arithmetic average roughness (Ray1) according to JIS B0601:1994 at a cutoff value of 0.08 mm, and the ten-point average roughness (Rzx1) according to JIS B0601:1994 at a cutoff value of 0.8 mm satisfy the following requirements (1) to (3): 0.30?(Rax1?Ray1)/Ray1?0.85 (1), Rzx1/Rax1?15.0 (2), Rax1?0.14 ?m (3).

Abstract: To provide a solid-state imaging device capable of further improving quality. Provided is a solid-state imaging device including: a first semiconductor element having a first semiconductor layer provided with a first through via and a photoelectric conversion unit configured to photoelectrically convert light that has been incident, a connection part that is wider than the first through via and is provided outside a region where the photoelectric conversion unit is provided on a surface of the first semiconductor layer on a side for receiving the light, connection wiring provided on the surface and configured to connect the first through via and the connection part, and a first passivation layer formed on the surface side; a second semiconductor element mounted on the first semiconductor element by the connection part; and a first guard ring formed on an outer peripheral portion of the first semiconductor element to surround the first semiconductor element.

Abstract: Provided is a decorative molded article that uniformizes the brightness of an uneven surface and inhibits whitening. The decorative molded article is provided with a protective layer having an uneven surface on an adherend, and satisfying the following requirement 1-1: <Requirement 1-1> A black plate is stuck to the surface of the article on the adherend side thereof via a transparent pressure-sensitive adhesive layer to prepare a sample A. A visible light inclined by 10 degrees from the normal direction of the sample A is made to run into the uneven surface, and based on the specular direction of the incident light as a reference angle, a luminous reflectance is measured every 0.2 degrees within a range of the reference angle±5.0 degrees. When the luminous reflectance at ?5.0 degrees relative to the reference angle is represented by Y?5.0 and the luminous reflectance at ?4.8 degrees is represented by Y?4.8, a value represented by an expression of [(Y?4.8?Y?5.0)/((Y?4.8+Y?5.

Abstract: A stacked imaging device includes a polarizer and a plurality of photoelectric conversion units that is stacked, and the polarizer and the plurality of photoelectric conversion units are stacked, with the polarizer being disposed closer to the light incident side than the plurality of photoelectric conversion units.

Abstract: A passenger protection control device for effectively preventing an infiltration of water into the interior of a case without the use of a sealant includes: a printed circuit board; a connector; and a case that accommodates such that, while a connection end surface with a wire harness of the connector is exposed, the printed circuit board is isolated from the outside. The case is formed by: a box shaped cover in which the periphery of a ceiling wall is enclosed by side walls and a floor surface is opened; and a rear cover that plugs the floor surface of the cover. The connector is installed in an opening provided in the side wall of the cover. The rear cover has a first standing wall projecting so as to face a connector in the portion of the cover in which the connector is installed. The first standing wall of the rear cover has a planar region in a head top part. The planar region has an inclined surface having a falling gradient facing outwardly from the cover.

Abstract: An imaging device includes one or more insulating layers on a substrate; an effective region including: a polarization layer in the one or more insulating layers and including one or more polarizers that polarize light; and at least one first photoelectric conversion region in the substrate and that converts incident light polarized by the one or more polarizers into electric charge; and a peripheral region outside the effective region and including: one or more wiring layers that include a pad portion in a same layer of the one or more insulating layers as the polarization layer.