Abstract: A solid-state imaging device has a sensor substrate having a pixel region on which photoelectric converters are arrayed; a driving circuit provided on a front face side that is opposite from a light receiving face as to the photoelectric converters on the sensor substrate; an insulation layer, provided on the light receiving face, and having a stepped construction wherein the film thickness of the pixel region is thinner than the film thickness in a periphery region provided on the outside of the pixel region; a wiring provided to the periphery region on the light receiving face side; and on-chip lenses provided to positions corresponding to the photoelectric converters on the insulation layer.

Abstract: A back-illuminated type solid-state image pickup unit in which a pad wiring line is provided on a light reception surface and which is capable of improving light reception characteristics in a photoelectric conversion section by having a thinner insulating film in a pixel region. The solid-state image pickup unit includes a sensor substrate having a pixel region in which photoelectric conversion sections are formed in an array, and a drive circuit is provided on a surface opposed to a light reception surface for the photoelectric conversion sections of the sensor substrate. A through hole via reaching the drive circuit from the light reception surface of the sensor substrate is provided in a peripheral region located outside the pixel region. A pad wiring line directly laminated on the through hole via is provided on the light reception surface in the peripheral region.

Abstract: A solid-state imaging device has a sensor substrate having a pixel region on which photoelectric converters are arrayed; a driving circuit provided on a front face side that is opposite from a light receiving face as to the photoelectric converters on the sensor substrate; an insulation layer, provided on the light receiving face, and having a stepped construction wherein the film thickness of the pixel region is thinner than the film thickness in a periphery region provided on the outside of the pixel region; a wiring provided to the periphery region on the light receiving face side; and on-chip lenses provided to positions corresponding to the photoelectric converters on the insulation layer.

Abstract: A back-illuminated type solid-state image pickup unit in which a pad wiring line is provided on a light reception surface and which is capable of improving light reception characteristics in a photoelectric conversion section by having a thinner insulating film in a pixel region. The solid-state image pickup unit includes a sensor substrate having a pixel region in which photoelectric conversion sections are formed in an array, and a drive circuit is provided on a surface opposed to a light reception surface for the photoelectric conversion sections of the sensor substrate. A through hole via reaching the drive circuit from the light reception surface of the sensor substrate is provided in a peripheral region located outside the pixel region. A pad wiring line directly laminated on the through hole via is provided on the light reception surface in the peripheral region.

Abstract: Disclosed are isolated human bone marrow mesenchymal stem cells having high telomerase activity (tBMMSCs). Also disclosed are isolated human CD34+ bone marrow mesenchymal stem cells. Also disclosed are bone marrow mesenchymal stem cells treated with a telomerase induction agent.

Abstract: A back-illuminated type solid-state image pickup unit in which a pad wiring line is provided on a light reception surface and which is capable of improving light reception characteristics in a photoelectric conversion section by having a thinner insulating film in a pixel region. The solid-state image pickup unit includes a sensor substrate having a pixel region in which photoelectric conversion sections are formed in an array, and a drive circuit is provided on a surface opposed to a light reception surface for the photoelectric conversion sections of the sensor substrate. A through hole via reaching the drive circuit from the light reception surface of the sensor substrate is provided in a peripheral region located outside the pixel region. A pad wiring line directly laminated on the through hole via is provided on the light reception surface in the peripheral region.

Abstract: A solid-state imaging device has a sensor substrate having a pixel region on which photoelectric converters are arrayed; a driving circuit provided on a front face side that is opposite from a light receiving face as to the photoelectric converters on the sensor substrate; an insulation layer, provided on the light receiving face, and having a stepped construction wherein the film thickness of the pixel region is thinner than the film thickness in a periphery region provided on the outside of the pixel region; a wiring provided to the periphery region on the light receiving face side; and on-chip lenses provided to positions corresponding to the photoelectric converters on the insulation layer.

Abstract: There is provided a back-illuminated type solid-state image pickup unit, in which a pad wiring line is provided on a light reception surface, capable of improving light reception characteristics in a photoelectric conversion section by thinning an insulating film in the back-illuminated type solid-state image pickup unit. A solid-state image pickup unit according to the present technology to accomplish such a purpose includes a sensor substrate having a pixel region in which photoelectric conversion sections are formed in an array, and a drive circuit is provided on a surface opposed to a light reception surface for the photoelectric conversion sections of the sensor substrate. Moreover, a through hole via reaching the drive circuit from the light reception surface of the sensor substrate is provided in a peripheral region located outside the pixel region. Further, a pad wiring line directly laminated on the through hole via is provided on the light reception surface in the peripheral region.

Abstract: An optical film having an optically-transparent substrate, and a low refractive index layer having a thickness d on one side of the optically-transparent substrate, a polarizing plate and a display panel provided with the same, and a display provided with the same.

Abstract: A solid-state imaging device has a sensor substrate having a pixel region on which photoelectric converters are arrayed; a driving circuit provided on a front face side that is opposite from a light receiving face as to the photoelectric converters on the sensor substrate; an insulation layer, provided on the light receiving face, and having a stepped construction wherein the film thickness of the pixel region is thinner than the film thickness in a periphery region provided on the outside of the pixel region; a wiring provided to the periphery region on the light receiving face side; and on-chip lenses provided to positions corresponding to the photoelectric converters on the insulation layer.

Abstract: Mesenchymal Stem Cells (MSCs), including bone marrow-derived MSCs (BMMSCs) expressing Fas and FasL, and secreting MCP-1 are disclosed. Also disclosed are methods for upregulating regulatory T cells in a subject by administering MSCs, including BMMSCs. Also disclosed are methods for treating systemic sclerosis or colitis in a subject by administering MSCs, including BMMSCs.

Abstract: A solid-state imaging apparatus includes a phase difference detection pixel including a photoelectric conversion section that is formed on a semiconductor substrate and configured to photoelectrically convert incident light, a waveguide configured to guide the incident light to the photoelectric conversion section, and a light-shielding section that is formed in vicinity of an opening of the waveguide and configured to shield a part of the incident light that enters the waveguide.

Abstract: There is provided a back-illuminated type solid-state image pickup unit, in which a pad wiring line is provided on a light reception surface, capable of improving light reception characteristics in a photoelectric conversion section by thinning an insulating film in the back-illuminated type solid-state image pickup unit. A solid-state image pickup unit according to the present technology to accomplish such a purpose includes a sensor substrate having a pixel region in which photoelectric conversion sections are formed in an array, and a drive circuit is provided on a surface opposed to a light reception surface for the photoelectric conversion sections of the sensor substrate. Moreover, a through hole via reaching the drive circuit from the light reception surface of the sensor substrate is provided in a peripheral region located outside the pixel region. Further, a pad wiring line directly laminated on the through hole via is provided on the light reception surface in the peripheral region.

Abstract: Disclosed are isolated human bone marrow mesenchymal stem cells having high telomerase activity (tBMMSCs). Also disclosed are isolated human CD34+ bone marrow mesenchymal stem cells. Also disclosed are bone marrow mesenchymal stem cells treated with a telomerase induction agent.

Abstract: A semiconductor device includes a substrate, a region including a semiconductor element on the substrate, and at least one guard ring structure provided around the region. The guard ring structure includes a guard ring and at least one portion comprised of the substrate.

Abstract: An occupant restraint device controller, including an electronic circuit substrate incorporating therein a control circuit that determines whether or not a vehicle has collided based on a detection output of a sensor detecting acceleration/deceleration of the vehicle and outputs a control signal for activating an occupant restraint tool. The electronic circuit substrate is accommodated inside a resin case provided with a structure for leading out a ground electrode from the inside to the outside of the resin case. The structure for leading out a ground electrode is configured such that a fixing leg, for fixing the electronic circuit substrate, is provided inside the case.

Abstract: A semiconductor device includes a substrate, a region including a semiconductor element on the substrate, and at least one guard ring structure provided around the region. The guard ring structure includes a guard ring and at least one portion comprised of the substrate.

Abstract: A semiconductor device includes a semiconductor device layer, a multilayered wiring section formed of a plurality of wiring layers and a plurality of interlayer insulating films on one surface of the semiconductor device layer, an external connection electrode formed on one of the plurality of wiring layers, and an opening formed in a concave shape extending from the semiconductor device layer to the multilayered wiring section so as to expose a surface of the external connection electrode; the opening has a larger opening diameter at an end farther from the external connection electrode than at the other end closer to the external connection electrode.

Abstract: A solid-state imaging device includes the following elements. A photoelectric conversion section is arranged in a semiconductor layer having a first surface through which light enters the photoelectric conversion section. A signal circuit section is arranged in a second surface of the semiconductor layer opposite to the first surface. The signal circuit section processes signal charge obtained by photoelectric conversion by the photoelectric conversion section. A reflective layer is arranged on the second surface of the semiconductor layer opposite to the first surface. The reflective layer reflects light transmitted through the photoelectric conversion section back thereto. The reflective layer is composed of a single tungsten layer or a laminate containing a tungsten layer.

Abstract: A solid-state imaging device receiving incident light from a backside thereof. The imaging device includes a semiconductor layer on which a plurality of pixels including photoelectric converters and pixel transistors are formed, a wiring layer formed on a first surface of the semiconductor layer, a pad portion formed on a second surface of the semiconductor layer, an opening formed to reach a conductive layer of the wiring layer, and an insulating film extendedly coated from the second surface to an internal side-wall of the opening so as to insulate the semiconductor layer.