Abstract: A wafer producing apparatus includes: an ingot grinding unit configured to grind and planarize an upper surface of an ingot held by a first holding table; a laser applying unit configured to apply a laser beam of such a wavelength as to be transmitted through the ingot to the ingot, with a focal point of the laser beam positioned at a depth corresponding to the thickness of a wafer to be produced from an upper surface of the ingot held by a second holding table, to form a peel-off layer; a wafer peeling unit configured to hold the upper surface of the ingot held by a third holding table and peel off the wafer from the peel-off layer; and a carrying tray having an ingot support section configured to support the ingot and a wafer support section configured to support the wafer.

Abstract: A wafer producing apparatus for producing an SiC wafer from a single-crystal SiC ingot includes an ingot grinding unit, a laser applying unit that applies a pulsed laser beam having a wavelength that is transmittable through the single-crystal SiC ingot while positioning a focal point of the pulsed laser beam in the single-crystal SiC ingot at a depth corresponding to the thickness of the SiC wafer to be produced from an upper surface of the single-crystal SiC ingot, thereby forming a peel-off layer in the single-crystal SiC ingot, a wafer peeling unit that peels the SiC wafer off the peel-off layer in the single-crystal SiC ingot, and a delivery unit assembly that delivers the single-crystal SiC ingot between the ingot grinding unit, the laser applying unit, and the wafer peeling unit.

Abstract: A SiC wafer is produced from a single crystal SiC ingot. Wafer producing apparatus includes a holding unit for holding the ingot, a flattening unit for grinding the upper surface of the ingot, thereby flattening the upper surface, a laser applying unit for setting the focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the upper surface of the ingot, the predetermined depth corresponding to the thickness of the wafer to be produced, and next applying the laser beam to the ingot to thereby form a separation layer for separating the wafer from the ingot, a wafer separating unit for holding the upper surface of the ingot to separate the wafer from the ingot along the separation layer, and a wafer storing unit for storing the wafer separated from the ingot.

Abstract: Disclosed herein is a laser processing apparatus for forming a separation layer inside an ingot by applying a laser beam to an end surface of the ingot in the condition where the focal point of the laser beam is set inside the ingot, the laser beam having a transmission wavelength to the ingot. The laser processing apparatus includes a holding unit for holding the ingot, a moving unit for moving the holding unit in a direction parallel to the end surface of the ingot held by the holding unit, a laser beam applying unit for applying the laser beam to the ingot held by the holding unit, an imaging unit for detecting the position of the ingot in the direction parallel to the end surface of the ingot, and a height detecting unit for detecting the height of the end surface of the ingot held by the holding unit.

Abstract: A chuck table holds a workpiece having a warp. The chuck table includes a suction holding member having a suction holding surface for holding the workpiece under suction, and an annular seal member provided around the outer circumference of the suction holding member for supporting a peripheral portion of the workpiece. The annular seal member is formed from an elastic member. The upper surface of the annular seal member is set higher in level than the suction holding surface according to the warp of the workpiece. In holding the workpiece on the chuck table under suction, vacuum leaking from the gap between the workpiece and the suction holding surface due to the warp of the workpiece is applied to the space defined by the workpiece and the annular seal member, thereby elastically deforming the annular seal member to flatten the upper surface of the workpiece.

Abstract: A separating apparatus for separating a composite substrate into a first substrate and a second substrate previously bonded to each other. The separating apparatus includes a support base having a supporting surface for supporting the composite substrate, a pair of side surface supporting rollers for supporting the peripheral side surface of the composite substrate placed on the supporting surface, and a separating unit for applying a separating force to the boundary between the first substrate and the second substrate constituting the composite substrate supported to the supporting surface of the support base and the side surface supporting rollers, thereby separating the composite substrate into the first substrate and the second substrate.

Abstract: A separating apparatus for separating a composite substrate into a first substrate and a second substrate previously bonded to each other. The separating apparatus includes a support base having a supporting surface for supporting the composite substrate, a pair of side surface supporting rollers for supporting the peripheral side surface of the composite substrate placed on the supporting surface, and a separating unit for applying a separating force to the boundary between the first substrate and the second substrate constituting the composite substrate supported to the supporting surface of the support base and the side surface supporting rollers, thereby separating the composite substrate into the first substrate and the second substrate.

Abstract: A chuck table holds a workpiece having a warp. The chuck table includes a suction holding member having a suction holding surface for holding the workpiece under suction, and an annular seal member provided around the outer circumference of the suction holding member for supporting a peripheral portion of the workpiece. The annular seal member is formed from an elastic member. The upper surface of the annular seal member is set higher in level than the suction holding surface according to the warp of the workpiece. In holding the workpiece on the chuck table under suction, vacuum leaking from the gap between the workpiece and the suction holding surface due to the warp of the workpiece is applied to the space defined by the workpiece and the annular seal member, thereby elastically deforming the annular seal member to flatten the upper surface of the workpiece.

Abstract: A method of processing a wafer having a plurality of devices which are composed of a laminate consisting of an insulating film and a functional film laminated on the front surface of a substrate, along streets for sectioning the devices, comprising a first trip blocking groove forming step for activating a first laser beam application means to form a blocking groove for dividing the laminate along a street of the wafer while moving the chuck table in a first direction in the processing-feed direction; a second trip blocking groove and dividing groove forming step for activating the first laser beam application means to form a blocking groove for dividing the laminate along a street and also to form a dividing groove along the blocking groove formed by the first trip blocking groove step while moving the chuck table in a second direction in the processing-feed direction.

Abstract: A method for applying a resin film to the face of a semiconductor wafer, comprising: an assembly holding step of holding an assembly on the surface of chuck means, with the back of the assembly being opposed to the surface of the chuck means, the assembly including a frame having a mounting opening formed in a central portion of the frame, and a semiconductor wafer mounted in the mounting opening of the frame by sticking a mounting tape to the back of the frame and the back of the semiconductor wafer; a liquid droplet supply step of supplying liquid droplets of a solution having a resin dissolved therein onto the face of the semiconductor wafer in the assembly after the assembly holding step; and a spreading step of rotating the chuck means subsequently to the liquid droplet supply step, thereby spreading the liquid droplets throughout the face of the semiconductor wafer.

Abstract: A method of processing a wafer having a plurality of devices which are composed of a laminate consisting of an insulating film and a functional film on the front surface of a substrate, along streets for sectioning the plurality of devices, the method comprising a first blocking groove forming step for forming a first blocking groove for dividing the laminate in a one-side portion in the width direction of a street of the wafer held on a chuck table by moving the chuck table in a first direction in the processing-feed direction while activating a first laser beam application means; and a second blocking groove and dividing groove forming step for forming a second blocking groove which divides the laminate in the other-side portion in the width direction of the street of the wafer which has undergone the first blocking groove forming step by moving the chuck table in a second direction in the processing-feed direction while activating the first laser beam application means and at the same time, forming a divid

Abstract: A chuck table for use in a laser beam processing machine, having a workpiece holding area for holding a workpiece, wherein the workpiece holding area is similar in shape to the workpiece and smaller in size than the workpiece, and a buffer groove is formed in such a manner that it surrounds the workpiece holding area.

Abstract: A method of dividing an adhesive film mounted on the back surface of a wafer having a plurality of streets formed on the front surface in a lattice pattern and function elements formed in a plurality of areas sectioned by the plurality of streets, along the streets in a state where the wafer is put on the surface of a protective tape mounted on an annular frame, wherein the adhesive film is cooled and the protective tape is expanded to divide the adhesive film along the peripheries of the function elements.

Abstract: A method of processing a wafer having a plurality of devices which are composed of a laminate consisting of an insulating film and a functional film on the front surface of a substrate, along streets for sectioning the plurality of devices, the method comprising a first blocking groove forming step for forming a first blocking groove for dividing the laminate in a one-side portion in the width direction of a street of the wafer held on a chuck table by moving the chuck table in a first direction in the processing-feed direction while activating a first laser beam application means; and a second blocking groove and dividing groove forming step for forming a second blocking groove which divides the laminate in the other-side portion in the width direction of the street of the wafer which has undergone the first blocking groove forming step by moving the chuck table in a second direction in the processing-feed direction while activating the first laser beam application means and at the same time, forming a divid

Abstract: A method of processing a wafer having a plurality of devices which are composed of a laminate consisting of an insulating film and a functional film laminated on the front surface of a substrate, along streets for sectioning the plurality of devices, comprising a first trip blocking groove forming step for activating a first laser beam application means to form a blocking groove for dividing the laminate along a street of the wafer while moving the chuck table in a first direction in the processing-feed direction; a second trip blocking groove and dividing groove forming step for activating the first laser beam application means to form a blocking groove for dividing the laminate along a street next to the street which has undergone the first trip blocking groove forming step and also to form a dividing groove along the blocking groove formed by the first trip blocking groove forming step while moving the chuck table in a second direction in the processing-feed direction; and a first trip blocking groove and

Abstract: A method of dividing a wafer having a plurality of dividing lines formed on the front surface in a lattice pattern and function elements formed in a plurality of areas sectioned by the plurality of dividing lines into individual chips, along the dividing lines, the method comprising the steps of forming a deteriorated layer by applying a laser beam capable of passing through the wafer along the dividing lines; expanding the support tape affixed to the wafer to divide the wafer into individual chips along the dividing lines where the deteriorated layer has been formed and to form a space between adjacent chips; and applying an external stimulus to an area, to which the wafer is affixed, of the support tape in the above state to cure the adhesive layer to maintain the space between adjacent chips.

Abstract: A method for applying a resin film to the face of a semiconductor wafer, comprising: an assembly holding step of holding an assembly on the surface of chuck means, with the back of the assembly being opposed to the surface of the chuck means, the assembly including a frame having a mounting opening formed in a central portion of the frame, and a semiconductor wafer mounted in the mounting opening of the frame by sticking a mounting tape to the back of the frame and the back of the semiconductor wafer; a liquid droplet supply step of supplying liquid droplets of a solution having a resin dissolved therein onto the face of the semiconductor wafer in the assembly after the assembly holding step; and a spreading step of rotating the chuck means subsequently to the liquid droplet supply step, thereby spreading the liquid droplets throughout the face of the semiconductor wafer.

Abstract: A tape expansion apparatus for expanding a holding tape, which is mounted on an annular frame and to which a wafer having a plurality of areas sectioned by a plurality of dividing lines is affixed, comprising a frame holding means for holding the annular frame; a plurality of tape holding means for nipping an area between the inner periphery of the annular frame and the wafer of the holding tape mounted on the annular frame held on the frame holding means; and a tape expansion means for moving the plurality of tape holding means in radial directions.

Abstract: A method of dividing a wafer having a plurality of dividing lines formed in a lattice pattern on the front surface, into individual chips along the dividing lines, the method comprising: a deteriorated layer forming step for forming a deteriorated layer in the inside of the wafer by applying a laser beam capable of passing through the wafer along the dividing lines; a wafer supporting step for putting one surface side of the wafer on a support tape which is mounted on an annular frame and shrinks by an external stimulus; a wafer-dividing step for dividing the wafer along the dividing lines where the deteriorated layer has been formed by exerting external force to the wafer which has been put on the support tape; and a chip spacing formation step for shrinking the shrink area between the inner periphery of the annular frame and the area, to which the wafer is affixed, in the support tape affixed to the divided wafer, by exerting an external stimulus to the shrink area.

Abstract: A method of dividing an adhesive film mounted on the back surface of a wafer having a plurality of streets formed on the front surface in a lattice pattern and function elements formed in a plurality of areas sectioned by the plurality of streets, along the streets in a state where the wafer is put on the surface of a protective tape mounted on an annular frame, wherein the adhesive film is cooled and the protective tape is expanded to divide the adhesive film along the peripheries of the function elements.