Abstract: An information processing apparatus includes a converting portion having a plurality of electrical conductors to be arranged in mutual separation and a medium arranged so as to mutually connect the plurality of electrical conductors, wherein the converting portion is the information processing apparatus to convert an input signal to an output signal. The medium includes the electrolyte and is configured to be capable of controlling an electrical conductivity of an electrically conductive path mutually electrically connecting the plurality of electrical conductors, and the medium is selected such that the electrical conductivity of the electrically conductive path changes over time with the input signal not being present.

Abstract: A sealing member that forms a combustion gas flow path of a gas turbine includes a first body portion having a cooling passage. The first body portion includes a first end portion forming one end portion in a circumferential direction, a second end portion forming the other end portion on an opposite side in the circumferential direction, and an intermediate portion formed between the first and second end portions. The cooling passage includes an intermediate portion cooling passage inclined at a first angle with respect to an axial direction, a first end portion cooling passage provided in the first end portion and inclined at a second angle with respect to the axial direction, and a second end portion cooling passage provided in the second end portion and inclined at a third angle with respect to the axial direction, and the second and third angles are smaller than the first angle.

Abstract: A conductive bridge memory device includes a memory cell including a first metal layer; a second metal layer; a first insulator layer having a first surface facing the first metal layer and a second surface facing the second metal layer and being a surface opposite to the first surface, and having a through hole penetrating between the first surface and the second surface; and a liquid layer being formed of liquid containing a liquid electrolyte impregnated in the through hole.

Abstract: Provided is a microswitch including a first electrode, a second electrode, and a porous coordination polymer conductor, in which the porous coordination polymer conductor is represented by the following Formula (1), and a metal forming the first electrode and a metal forming the second electrode have different oxidation-reduction potentials, [MLx]n(D)y??(1), where M represents a metal ion selected from group 2 to group 13 elements in a periodic table, L represents a ligand that has two or more functional groups capable of coordination to M in a structure of L and is crosslinkable with two M's, D represents a conductivity aid that includes no metal element, x represents 0.5 to 4 and y represents 0.0001 to 20 with respect to x as 1, n represents the number of repeating units of a constituent unit represented by [MLx], and n represents 5 or more.

Abstract: A high-performance CB-RAM having a low operating voltage and a high switching endurance even when alumina is used for the insulator layer; wherein, an electrolyte layer impregnated in a pore of an insulator layer is configured to include a mixed ionic liquid in which is mixed a solvate ionic liquid, and a low-viscous ionic liquid being an ionic liquid having a viscosity coefficient smaller than that of the solvate ionic liquid.

Abstract: Provided is a microswitch including a first electrode, a second electrode, and a porous coordination polymer conductor, in which the porous coordination polymer conductor is represented by the following Formula (1), and a metal forming the first electrode and a metal forming the second electrode have different oxidation-reduction potentials, [MLx]n(D)y??(1), where M represents a metal ion selected from group 2 to group 13 elements in a periodic table, L represents a ligand that has two or more functional groups capable of coordination to M in a structure of L and is crosslinkable with two M's, D represents a conductivity aid that includes no metal element, x represents 0.5 to 4 and y represents 0.0001 to 20 with respect to x as 1, n represents the number of repeating units of a constituent unit represented by [MLx], and n represents 5 or more.

Abstract: According to one embodiment, there is provided a control device of a secondary excitation device which supplies a rotary machine with a voltage or current of a variable frequency. The control device includes a harmonic frequency calculation unit which calculates a frequency of a specific harmonic generated on a primary side of the rotary machine by using a slip frequency or rotation speed of the rotary machine and a carrier frequency of the secondary excitation device, and a carrier frequency correction unit which corrects the carrier frequency of the secondary excitation device such that the frequency of the specific harmonic calculated by the harmonic frequency calculation unit falls within a given band.

Abstract: According to one embodiment, there is provided a control device of a secondary excitation device which supplies a rotary machine with a voltage or current of a variable frequency. The control device includes a harmonic frequency calculation unit which calculates a frequency of a specific harmonic generated on a primary side of the rotary machine by using a slip frequency or rotation speed of the rotary machine and a carrier frequency of the secondary excitation device, and a carrier frequency correction unit which corrects the carrier frequency of the secondary excitation device such that the frequency of the specific harmonic calculated by the harmonic frequency calculation unit falls within a given band.

Abstract: A diagnosis processing device is provided in which diagnosis is realizable by a simple arrangement. A diagnosis processing device (1) of the present invention includes: a learning pattern creating section (10a) for creating a learning pattern by sampling data from a learning image in which abnormality information indicating a substantive feature of abnormality of a target is pre-known; a learning processing section (12) for causing a neural network (17) to learn, by using learning patterns; a diagnostic pattern creating section (10b) for creating a diagnostic pattern by sampling data from a diagnostic image in which abnormality information is unknown; a determination processing section (18) for determining a substantive feature of the abnormality of the target indicated in the abnormality information in the diagnostic image, based on an output value outputted, in response to an input of the diagnostic pattern, from a learned neural network (17) which is a neural network subjected to learning.

Abstract: In a resistance change memory (ReRAM) storing data by utilizing change in resistance of a resistance change element, a transistor T, interlayer insulating films, W plugs and the like are formed on a semiconductor substrate. Thereafter, a Pt film serving as a lower electrode of the resist change element is formed and a transition metal film (Ni film) is formed on the Pt film. After that, the surface of the transition metal film is oxidized to form a transition metal oxide film and a Pt film serving as an upper electrode is formed on the transition metal oxide film.

Abstract: A nonvolatile semiconductor memory device includes a memory cell including a resistance memory element which memorizes a high resistance state or a low resistance state, switches the high resistance state and the low resistance state by voltage application, one end of the resistance memory element being coupled to a bit line, the other end of the resistance memory element being coupled to a source line via the first transistor; and a resistor whose resistance value is higher than a resistance value of the resistance memory element in the low resistance state and lower than a resistance value of the resistance memory element in the high resistance state, one end of the resistor being coupled to said one end of the resistance memory element and the bit line, the other end of the resistor being coupled to the source line via the second transistor.

Abstract: A diagnosis processing device is provided in which diagnosis is realizable by a simple arrangement. A diagnosis processing device (1) of the present invention includes: a learning pattern creating section (10a) for creating a learning pattern by sampling data from a learning image in which abnormality information indicating a substantive feature of abnormality of a target is pre-known; a learning processing section (12) for causing a neural network (17) to learn, by using learning patterns; a diagnostic pattern creating section (10b) for creating a diagnostic pattern by sampling data from a diagnostic image in which abnormality information is unknown; a determination processing section (18) for determining a substantive feature of the abnormality of the target indicated in the abnormality information in the diagnostic image, based on an output value outputted, in response to an input of the diagnostic pattern, from a learned neural network (17) which is a neural network subjected to learning.

Abstract: A titanium oxide film, a nickel oxide film and a top electrode are formed on a bottom electrode, and a resistance element is constituted by the bottom electrode, the titanium oxide film, the nickel oxide film and the top electrode. A thickness of the titanium oxide film is 5 nm, and a thickness of the nickel oxide film is 60 nm. A rate of oxygen in nickel oxide composing the nickel oxide film is lower than a rate of oxygen in a stoichiometric composition.

Abstract: A resistance memory element memorizing a high resistance state or a low resistance state in a memory region and switched between the high resistance state and the low resistance state by an application of a voltage includes a resistance memory layer 42 of a resistance memory material, an electrode 38 and an electrode 40 arranged, sandwiching the resistance memory layer 42. The electrode 38 and the electrode 40 are formed on the same surface, whereby the manufacturing process of the resistance memory element can be simplified.

Abstract: In a resistance change memory (ReRAM) storing data by utilizing change in resistance of a resistance change element, a transistor T, interlayer insulating films, W plugs and the like are formed on a semiconductor substrate. Thereafter, a Pt film serving as a lower electrode of the resist change element is formed and a transition metal film (Ni film) is formed on the Pt film. After that, the surface of the transition metal film is oxidized to form a transition metal oxide film and a Pt film serving as an upper electrode is formed on the transition metal oxide film.

Abstract: A resistance memory element, which memorizes a high resistance state and a low resistance state and switches between the high resistance state and the low resistance state by an application of a voltage, includes a pair of electrodes and a resistance memory layer sandwiched between the pair of electrodes and including a first layer of a first resistance memory material and a second layer of a second resistance memory material. The current value of the resistance memory element in the writing operation can be drastically decreased, and a nonvolatile semiconductor memory device of high integration and low electric power consumption can be formed.

Abstract: An NMOS transistor 14 having one end connected to one end of a resistance memory element 10 is provided, and when a voltage is applied to the resistance memory element 10 via the NMOS transistor 14 to switch the resistance memory element 10 from the low resistance state to the high resistance state, the gate voltage of the NMOS transistor 14 is set at a value which is equal to or greater than the total of the reset voltage of the resistance memory element 10 and the threshold voltage of the NMOS transistor 14 and is smaller than the total of the set voltage of the resistance memory element 10 and the threshold voltage of the NMOS transistor 14, whereby the voltage applied to the resistance memory element 10 is set at a value which is equal to or greater than the reset voltage and is smaller than the set voltage.

Abstract: A nonvolatile semiconductor memory device includes a memory cell including a resistance memory element which memorizes a high resistance state or a low resistance state, switches the high resistance state and the low resistance state by voltage application, one end of the resistance memory element being coupled to a bit line, the other end of the resistance memory element being coupled to a source line via the first transistor; and a resistor whose resistance value is higher than a resistance value of the resistance memory element in the low resistance state and lower than a resistance value of the resistance memory element in the high resistance state, one end of the resistor being coupled to said one end of the resistance memory element and the bit line, the other end of the resistor being coupled to the source line via the second transistor.

Abstract: A titanium oxide film, a nickel oxide film and a top electrode are formed on a bottom electrode, and a resistance element is constituted by the bottom electrode, the titanium oxide film, the nickel oxide film and the top electrode. A thickness of the titanium oxide film is 5 nm, and a thickness of the nickel oxide film is 60 nm. A rate of oxygen in nickel oxide composing the nickel oxide film is lower than a rate of oxygen in a stoichiometric composition.

Abstract: In a method of writing into a nonvolatile semiconductor memory device including a resistance memory element which memorizes a high resistance state and a low resistance state and switches between the high resistance state and the low resistance state by an application of a voltage, a variable resistor is parallelly connected to the resistance memory element, and when the voltage is applied to the resistance memory element to switch the resistance memory element between the high resistance state and the low resistance state, a resistance value of the variable resistor is set corresponding to the resistance state of the resistance memory element so that a writing circuit for applying the voltage to the resistance memory element, and a synthetic resistor of the resistance memory element and the variable resistor make the impedance-matching.