Abstract: A resistance memory element memorizing a high resistance state or a low resistance state in a memory region and switched between the high resistance state and the low resistance state by an application of a voltage includes a resistance memory layer 42 of a resistance memory material, an electrode 38 and an electrode 40 arranged, sandwiching the resistance memory layer 42. The electrode 38 and the electrode 40 are formed on the same surface, whereby the manufacturing process of the resistance memory element can be simplified.

Abstract: An NMOS transistor 14 having one end connected to one end of a resistance memory element 10 is provided, and when a voltage is applied to the resistance memory element 10 via the NMOS transistor 14 to switch the resistance memory element 10 from the low resistance state to the high resistance state, the gate voltage of the NMOS transistor 14 is set at a value which is equal to or greater than the total of the reset voltage of the resistance memory element 10 and the threshold voltage of the NMOS transistor 14 and is smaller than the total of the set voltage of the resistance memory element 10 and the threshold voltage of the NMOS transistor 14, whereby the voltage applied to the resistance memory element 10 is set at a value which is equal to or greater than the reset voltage and is smaller than the set voltage.

Abstract: The semiconductor memory device includes a resistance memory element 46 including a common electrode 38, a resistance memory layer 42 which is formed on the common electrode 38 and is switched between a high resistance state and a low resistance state by an application of a voltage, and a plurality of discrete electrodes formed on the resistance memory layer 42. The resistance memory layer 42 includes a plurality of memory regions which discretely and independently memorize the high resistance state or the low resistance state between the common electrode and the plural discrete electrodes 44. Thus, the resistance memory element can be downsized, and the integration of the nonvolatile semiconductor memory device can be improved.

Abstract: A method of writing into a nonvolatile semiconductor memory device including a resistance memory element which memorizes a high resistance state and a low resistance state and switches between the high resistance state and the low resistance state by an application of a voltage, includes the step of applying the voltage to the resistance memory element for switching from the high resistance state to the low resistance state, while a value of a current to flow in the resistance memory elements are limited to thereby memorize in the resistance memory elements the low resistance state of the low resistance value corresponding to the limited value of the current.

Abstract: In a method of writing into a nonvolatile semiconductor memory device including a resistance memory element which memorizes a high resistance state and a low resistance state and switches between the high resistance state and the low resistance state by an application of a voltage, a variable resistor is parallelly connected to the resistance memory element, and when the voltage is applied to the resistance memory element to switch the resistance memory element between the high resistance state and the low resistance state, a resistance value of the variable resistor is set corresponding to the resistance state of the resistance memory element so that a writing circuit for applying the voltage to the resistance memory element, and a synthetic resistor of the resistance memory element and the variable resistor make the impedance-matching.

Abstract: A resistance memory element, which memorizes a high resistance state and a low resistance state and switches between the high resistance state and the low resistance state by an application of a voltage, includes a pair of electrodes and a resistance memory layer sandwiched between the pair of electrodes and including a first layer of a first resistance memory material and a second layer of a second resistance memory material. The current value of the resistance memory element in the writing operation can be drastically decreased, and a nonvolatile semiconductor memory device of high integration and low electric power consumption can be formed.