Abstract: An electrostatic protection circuit including: a first power supply terminal 110; a second power supply terminal 112; an input-output terminal 111 for an external connection; a P-type MOSFET for a buffer 108 for pulling up input and output to a high-level potential; an N-type MOSFET for the buffer 107 for pulling down the input and output to a low-level potential; a rectifying element 109 connected between the first and second power supply terminals; a detector 101 for comparing the potential of the input-output terminal 111 to the potential of the first power supply terminal 110 to detect whether or not an electrostatic surge is flowing in; and controllers 105 and 106, wherein the controllers 105 and 106 control a gate potential of the N-type MOSFET 107 for the buffer when the detector 101 detects inflow of the electrostatic surge and turn off the N-type MOSFET 107 for the buffer.

Abstract: A semiconductor device includes first, second, third, and fourth semiconductor regions, a gate electrode, and silicide layers. The first, second, and third semiconductor regions are formed in a semiconductor substrate while being spaced part from each other. The fourth semiconductor region is formed in the semiconductor substrate between the second semiconductor region and the third semiconductor region and has an electric resistance higher than the first, second, and third semiconductor regions. In a direction perpendicular to a direction to connect the first and second semiconductor regions, the fourth semiconductor region has a width smaller than that of the semiconductor substrate sandwiched between the first semiconductor region and the second semiconductor region. The gate electrode is formed above the semiconductor substrate between the first semiconductor region and the second semiconductor region.

Abstract: An electrostatic protection circuit being an integrated circuit on a semiconductor substrate and including a first power supply terminal having a predetermined potential VDD, a second power supply terminal having a lower potential VSS than the predetermined potential, and an input/output terminal for a signal, the electrostatic protection circuit including: a first and second diodes having the respective cathode electrodes thereof connected in series at a first common connection point between the first power supply terminal and input/output terminal; a third and fourth diodes having the respective anode electrodes thereof connected in series at a second common connection point between the second power supply terminal and input/output terminal; a first discharge element, connected between the first and second common connection points, for discharging excessive static electricity; and a second discharge element, connected between the first and second power supply terminals, for discharging excessive static elec

Abstract: There is disclosed a semiconductor device comprising at least one first pad being formed above a substrate and given a first potential, at least one first conductive layer being formed between the first pad and the substrate so as to be electrically connected to the first pad, at least one second pad being formed above the substrate so as to sandwich the at least one first conductive layer between the second pad and the substrate, and given a second potential different from the first potential, at least one second conductive layer being formed between the first and second pads and the substrate so as to be electrically connected to the second pad, and a plurality of insulating layers being stacked on the substrate and at least one of the insulating layers being as an inter-electrode insulator of a capacitance element.

Abstract: A semiconductor memory device is disclosed which includes an array of memory cells for storing data depending on whether current pull-in is present or absent or alternatively whether it is large or small, a plurality of sense lines with read data of the memory cell array transferred thereto, a reference sense line for common use in data sensing at the plurality of sense lines while being given a reference voltage for the data sense, and a sense amplifier array having a plurality of sense amplifiers for amplifying a difference voltage between the plurality of sense lines and the reference sense line to thereby determine read data.

Abstract: A ground drilling machine comprises a controller for automatically controlling the injection of working liquid according to the output signal output as a function of the rotating condition of the pilot head 20. When the pilot head 20 is driven forward or backward, working liquid can be injected by switching the working liquid transfer valve 111 so long as the pilot head 20 is revolving in order to improve the digging efficiency, the soil delivering efficiency and the cooling efficiency of the machine. The injection of working liquid can be suspended when the direction of propelling the pilot head 20 is shifted while stopping the revolution of the pilot head 20 because no working liquid is required for delivering the dug soil and cooling the leading body. Thus, working liquid can be injected always at an optimal rate depending on the rotating condition of the pilot head 20 to suppress any waste of working liquid and reduce the construction cost.

Abstract: A semiconductor device includes a semiconductor substrate, an insulating layer, an inductor, a guard ring and a potential-applying line. The insulating layer is formed on the semiconductor substrate. The inductor is formed on the insulating layer. The guard ring is formed in the semiconductor substrate, surrounding the inductor and being a closed ring composed of waving segments connected, end to end. The potential-applying line applies a predetermined potential to the guard ring.

Abstract: A leading body for a ground drilling machine is provided which includes a main body which is tapered at a front end thereof to form a first sloped surface and a second sloped surface on opposite sides of the front end of the main body. A slant-cutting section extends from the main body substantially along the first sloped surface. And injection ports which are adapted to inject digging liquid are positioned in the slant-cutting section such that the injection ports inject digging liquid rearward with respect to a propelling direction of the leading body along an obtuse angle with respect to a rotation axis of the leading body and substantially along the second sloped surface.

Abstract: A semiconductor device includes a semiconductor substrate, an insulating layer, an inductor, a guard ring and a potential-applying line. The insulating layer is formed on the semiconductor substrate. The inductor is formed on the insulating layer. The guard ring is formed in the semiconductor substrate, surrounding the inductor and being a closed ring composed of waving segments connected, end to end. The potential-applying line applies a predetermined potential to the guard ring.

Abstract: Hydroxyphenyl adamantanes are represented by the general formula (1): wherein R is an alkyl group, cycloalkyl group or phenyl group; m is 0 or an integer 1 or 2; l is 0 or 1; when l is 1, hydroxy groups of substituted hydroxyphenyl groups at positions 1 and 3 are together in para-position; n is 0 or an integer 1, 2 or 3; and when l is 0, n is an integer 1, 2 or 3.

Abstract: In a pilot head 20 to be used in a ground drilling machine, the injection ports 22A for injecting digging liquid are directed rearward and angularly separated from the axis of rotation N by an obtuse angle &thgr;1 (168E). With this arrangement, when digging a leading hole D from a starting pit, the flow rate of digging liquid flowing from the front end of the leading hole D toward the starting pit can be increased to efficiently deliver soil produced by the digging operation to remarkably improve the soil removing efficiency.

Abstract: A ground drilling machine comprises a controller for automatically controlling the injection of working liquid according to the output signal output as a function of the rotating condition of the pilot head 20. When the pilot head 20 is driven forward or backward, working liquid can be injected by switching the working liquid transfer valve 111 so long as the pilot head 20 is revolving in order to improve the digging efficiency, the soil delivering efficiency and the cooling efficiency of the machine. The injection of working liquid can be suspended when the direction of propelling the pilot head 20 is shifted while stopping the revolution of the pilot head 20 because no working liquid is required for delivering the dug soil and cooling the leading body. Thus, working liquid can be injected always at an optimal rate depending on the rotating condition of the pilot head 20 to suppress any waste of working liquid and reduce the construction cost.

Abstract: A ground drilling machine includes a machine body a rod propelling device, a rod exchanging device and a support unit provided for the machine body for supporting the rod exchanging device. The rod propelling device has a frame movably mounted to the machine body. The frame is slidable on a support portion provided for the machine body. The rod exchanging device is attached to the frame of the rod propelling device via a transverse mounting member. The rod exchanging device is also supported on the support unit so as to be slidable on the support unit along with the movement of the rod propelling device without changing of its relative position to the rod propelling device. The rod exchanging device can be made light and compact because the rod exchanging device is supported by the support unit which is provided for the machine body and accordingly a large bending load is not applied to the main body portion of the rod exchanging device.

Abstract: Hydroxyphenyl adamantanes are represented by the general formula (1): 1

Abstract: A level shifter comprises a latch circuit, a first capacitor and a second capacitor. The latch circuit has a first node and a second node set to a first voltage or a second voltage. The second node is set to the second voltage when the first node is set to the first voltage and the second node is set to the first voltage when the first node is set to the second voltage. A first terminal side of the first capacitor is connected to the first node. A first signal is supplied to a second terminal side of the first capacitor. A third terminal side of the second capacitor is connected to the second node. When the first signal is supplied to the second terminal side of the first capacitor, an inverted replica of the first signal is supplied to a fourth terminal side of the second capacitor.

Abstract: A semiconductor integrated circuit device comprises a plurality of magnetic tunneling junction elements, a writing word line which provides an auxiliary magnetic field for writing data to the plurality of magnetic tunneling junction elements, a plurality of bit lines connected to ones of ends of the respective plurality of magnetic tunneling junction elements, and a cell selecting transistor. The cell selecting transistor is commonly connected to other ends of the respective plurality of magnetic tunneling junction elements.

Abstract: A semiconductor memory device is disclosed which includes an array of memory cells for storing data depending on whether current pull-in is present or absent or alternatively whether it is large or small, a plurality of sense lines with read data of the memory cell array transferred thereto, a reference sense line for common use in data sensing at the plurality of sense lines while being given a reference voltage for the data sense, and a sense amplifier array having a plurality of sense amplifiers for amplifying a difference voltage between the plurality of sense lines and the reference sense line to thereby determine read data.

Abstract: A semiconductor integrated circuit device comprises a plurality of magnetic tunneling junction elements, a writing word line which provides an auxiliary magnetic field for writing data to the plurality of magnetic tunneling junction elements, a plurality of bit lines connected to ones of ends of the respective plurality of magnetic tunneling junction elements, and a cell selecting transistor. The cell selecting transistor is commonly connected to other ends of the respective plurality of magnetic tunneling junction elements.