Abstract: A MOS type semiconductor device is manufactured by forming a polycrystalline silicon gate electrode in an active region of a semiconductor silicon substrate, forming diffused layers in the substrate, the diffused layers being of a conductivity type opposite to that of the substrate, forming a relatively thick oxide film on the polycrystalline silicon gate electrode, depositing on the oxide film, a silicon nitride film, another oxide film, and a resin film to a thickness smaller than that of the relatively thick oxide film, forming channel stop layers and exposing the polycrystalline silicon film on the diffused layers to form electrode.